페이지 9 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSO303PNTMA1	Infineon Technologies	MOSFET 2P-CH 30V 8.2A 8DSO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,648	Logic Level Gate	30V	8.2A	21 mOhm @ 8.2A, 10V	2V @ 100µA	72.5nC @ 10V	1761pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	P-DSO-8
PMDPB28UN,115	NXP	MOSFET 2N-CH 20V 4.6A HUSON6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	패키지: 6-UDFN Exposed Pad	재고5,904	Logic Level Gate	20V	4.6A	37 mOhm @ 4.6A, 4.5V	1V @ 250µA	4.7nC @ 4.5V	265pF @ 10V	510mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
AO4850	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 75V 2.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고406,548	Logic Level Gate	75V	2.3A	130 mOhm @ 3.1A, 10V	3V @ 250µA	7nC @ 10V	380pF @ 30V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI7909DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 5.3A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고7,328	Logic Level Gate	12V	5.3A	37 mOhm @ 7.7A, 4.5V	1V @ 700µA	24nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI4923DY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 6.2A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고63,852	Logic Level Gate	30V	6.2A	21 mOhm @ 8.3A, 10V	3V @ 250µA	70nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM100A23SCTG	Microsemi Corporation	MOSFET 2N-CH 1000V 36A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고4,480	Silicon Carbide (SiC)	1000V (1kV)	36A	270 mOhm @ 18A, 10V	5V @ 5mA	308nC @ 10V	8700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
FDW2511NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.1A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.1A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고167,628	Logic Level Gate	20V	7.1A	20 mOhm @ 7.1A, 4.5V	1.5V @ 250µA	17.3nC @ 4.5V	1000pF @ 10V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDS3601	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 1.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V Power - Max: 900mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고91,800	Logic Level Gate	100V	1.3A	480 mOhm @ 1.3A, 10V	4V @ 250µA	5nC @ 10V	153pF @ 50V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMDPB65UP,115	NXP	MOSFET 2P-CH 20V 3.5A SOT1118 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 70 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Power - Max: 520mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	패키지: 6-UDFN Exposed Pad	재고162,000	Logic Level Gate	20V	3.5A	70 mOhm @ 1A, 4.5V	1V @ 250µA	6nC @ 4.5V	380pF @ 10V	520mW	150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
DMN6070SSD-13	Diodes Incorporated	MOSFET 2N-CH 60V 3.3A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고16,896	Logic Level Gate	60V	3.3A	80 mOhm @ 12A, 10V	3V @ 250µA	12.3nC @ 10V	588pF @ 30V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM50H14FT3G	Microsemi Corporation	MOSFET 4N-CH 500V 26A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고7,376	Standard	500V	26A	168 mOhm @ 13A, 10V	5V @ 1mA	72nC @ 10V	3259pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
AUIRF7342QTR	Infineon Technologies	MOSFET 2P-CH 55V 3.4A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,704	Logic Level Gate	55V	3.4A	105 mOhm @ 3.4A, 10V	3V @ 250µA	38nC @ 10V	690pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMC4559DN8TC	Diodes Incorporated	MOSFET N/P-CH 60V 3.6A/2.6A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고414,252	Logic Level Gate	60V	3.6A, 2.6A	55 mOhm @ 4.5A, 10V	1V @ 250µA (Min)	20.4nC @ 10V	1063pF @ 30V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FCAB21520L1	Panasonic Electronic Components	GATE RESISTOR INTEGRATED DUAL NC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.4V @ 1.64mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V Power - Max: 3.8W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-SMD	패키지: 10-SMD, No Lead	재고17,232	Standard	-	-	-	1.4V @ 1.64mA	38nC @ 4V	5250pF @ 10V	3.8W (Ta)	150°C	Surface Mount	10-SMD, No Lead	10-SMD
SI5504BDC-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 3.12W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	패키지: 8-SMD, Flat Lead	재고110,814	Logic Level Gate	30V	4A, 3.7A	65 mOhm @ 3.1A, 10V	3V @ 250µA	7nC @ 10V	220pF @ 15V	3.12W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SLA5074	Sanken	MOSFET 4N-CH 60V 5A 15-SIP FET Type: 4 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 4V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 4.8W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 15-SIP, Exposed Tab, Formed Leads Supplier Device Package: 15-SIP	패키지: 15-SIP, Exposed Tab, Formed Leads	재고15,084	Logic Level Gate	60V	5A	300 mOhm @ 3A, 4V	2V @ 250µA	-	320pF @ 10V	4.8W	150°C (TJ)	Through Hole	15-SIP, Exposed Tab, Formed Leads	15-SIP
DMN2024UVT-13	Diodes Incorporated	MOSFET 2N-CH 20V 7A TSOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	패키지: -	Request a Quote	-	20V	7A (Ta)	24mOhm @ 6.5A, 4.5V	900mV @ 250µA	7.1nC @ 4.5V	647pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6
SH8M24GZETB	Rohm Semiconductor	MOSFET N/P-CH 45V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고27,324	-	45V	6A (Ta)	46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V	2.5V @ 1mA	9.6nC @ 5V, 18.2nC @ 5V	550pF @ 10V, 1700pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MSCSM70AM19CT1AG	Microchip Technology	SIC 2N-CH 700V 124A SP1F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP1F	패키지: -	Request a Quote	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP1F
EMH2308-TL-E	onsemi	MOSFET 2P-CH 20V 3A 8EMH FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 1.2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	패키지: -	Request a Quote	Logic Level Gate	20V	3A	85mOhm @ 3A, 4.5V	-	4nC @ 4.5V	320pF @ 10V	1.2W	-	Surface Mount	8-SMD, Flat Lead	8-EMH
SQJ974EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 100V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	패키지: -	재고18,000	-	100V	30A (Tc)	25.5mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1050pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SIZF914DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 23.5A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V, 4670pF @ 10V Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	패키지: -	Request a Quote	-	25V	23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)	3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V	2.4V @ 250µA, 2.2V @ 250µA	21nC @ 10V, 98nC @ 10V	1050pF @ 10V, 4670pF @ 10V	3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
NXV08A170DB2	onsemi	APM12-CBA, MV7 80V, AL2O3, HALF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V Power - Max: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: 12-PowerDIP Module (1.118", 28.40mm) Supplier Device Package: APM12-CBA	패키지: -	Request a Quote	-	80V	200A (Tj)	0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V	4V @ 250µA	195nC @ 10V	14000pF @ 40V	-	175°C (TJ)	Through Hole	12-PowerDIP Module (1.118", 28.40mm)	APM12-CBA
MSCSM120AM31T1AG	Microchip Technology	SIC 2N-CH 1200V 89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SSFP4806	Good-Ark Semiconductor	MOSFET 2N-CH 40V 30A 8PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power - Max: 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PPAK (5.1x5.71)	패키지: -	재고9,000	-	40V	30A (Tc)	9mOhm @ 8A, 10V	2.5V @ 250µA	24nC @ 4.5V	2200pF @ 25V	46W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PPAK (5.1x5.71)
IRFH7911TR2PBF	Infineon Technologies	MOSFET 2N-CH 30V 13A/28A PQFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 28A Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V Power - Max: 2.4W, 3.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 18-PowerVQFN Supplier Device Package: PQFN (5x6)	패키지: -	Request a Quote	Logic Level Gate	30V	13A, 28A	8.6mOhm @ 12A, 10V	2.35V @ 25µA	12nC @ 4.5V	1060pF @ 15V	2.4W, 3.4W	-	Surface Mount	18-PowerVQFN	PQFN (5x6)
SSM6L14FE-TE85L-F	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.8A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고52,236	Logic Level Gate, 1.5V Drive	20V	800mA (Ta), 720mA (Ta)	240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V	1V @ 1mA	2nC @ 4.5V, 1.76nC @ 4.5V	90pF @ 10V, 110pF @ 10V	150mW (Ta)	150°C	Surface Mount	SOT-563, SOT-666	ES6
BSC155N06NDATMA1	Infineon Technologies	MOSFET 2N-CH 60V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V Power - Max: 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: -	재고21,720	-	60V	20A (Tc)	15.5mOhm @ 17A, 10V	4V @ 20µA	29nC @ 10V	2250pF @ 30V	50W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4

BSO303PNTMA1

Infineon Technologies

MOSFET 2P-CH 30V 8.2A 8DSO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: P-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,648

Logic Level Gate

30V

8.2A

21 mOhm @ 8.2A, 10V

2V @ 100µA

72.5nC @ 10V

1761pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

P-DSO-8

PMDPB28UN,115

NXP

MOSFET 2N-CH 20V 4.6A HUSON6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V
Power - Max: 510mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

패키지: 6-UDFN Exposed Pad

재고5,904

Logic Level Gate

20V

4.6A

37 mOhm @ 4.6A, 4.5V

1V @ 250µA

4.7nC @ 4.5V

265pF @ 10V

510mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

AO4850

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 75V 2.3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고406,548

Logic Level Gate

75V

2.3A

130 mOhm @ 3.1A, 10V

3V @ 250µA

7nC @ 10V

380pF @ 30V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI7909DN-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 5.3A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고7,328

Logic Level Gate

12V

5.3A

37 mOhm @ 7.7A, 4.5V

1V @ 700µA

24nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI4923DY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 30V 6.2A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고63,852

Logic Level Gate

30V

6.2A

21 mOhm @ 8.3A, 10V

3V @ 250µA

70nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM100A23SCTG

Microsemi Corporation

MOSFET 2N-CH 1000V 36A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고4,480

Silicon Carbide (SiC)

1000V (1kV)

36A

270 mOhm @ 18A, 10V

5V @ 5mA

308nC @ 10V

8700pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

FDW2511NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.1A 8TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.1A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고167,628

Logic Level Gate

20V

7.1A

20 mOhm @ 7.1A, 4.5V

1.5V @ 250µA

17.3nC @ 4.5V

1000pF @ 10V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDS3601

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 1.3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Power - Max: 900mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고91,800

Logic Level Gate

100V

1.3A

480 mOhm @ 1.3A, 10V

4V @ 250µA

5nC @ 10V

153pF @ 50V

900mW

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PMDPB65UP,115

NXP

MOSFET 2P-CH 20V 3.5A SOT1118

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V
Power - Max: 520mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

패키지: 6-UDFN Exposed Pad

재고162,000

Logic Level Gate

20V

3.5A

70 mOhm @ 1A, 4.5V

1V @ 250µA

6nC @ 4.5V

380pF @ 10V

520mW

150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

DMN6070SSD-13

Diodes Incorporated

MOSFET 2N-CH 60V 3.3A 8-SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고16,896

Logic Level Gate

60V

3.3A

80 mOhm @ 12A, 10V

3V @ 250µA

12.3nC @ 10V

588pF @ 30V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM50H14FT3G

Microsemi Corporation

MOSFET 4N-CH 500V 26A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고7,376

Standard

500V

26A

168 mOhm @ 13A, 10V

5V @ 1mA

72nC @ 10V

3259pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

AUIRF7342QTR

Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,704

Logic Level Gate

55V

3.4A

105 mOhm @ 3.4A, 10V

3V @ 250µA

38nC @ 10V

690pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMC4559DN8TC

Diodes Incorporated

MOSFET N/P-CH 60V 3.6A/2.6A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고414,252

Logic Level Gate

60V

3.6A, 2.6A

55 mOhm @ 4.5A, 10V

1V @ 250µA (Min)

20.4nC @ 10V

1063pF @ 30V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FCAB21520L1

Panasonic Electronic Components

GATE RESISTOR INTEGRATED DUAL NC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.4V @ 1.64mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V
Power - Max: 3.8W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-SMD

패키지: 10-SMD, No Lead

재고17,232

Standard

-

1.4V @ 1.64mA

38nC @ 4V

5250pF @ 10V

3.8W (Ta)

150°C

Surface Mount

10-SMD, No Lead

10-SMD

SI5504BDC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 3.12W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

패키지: 8-SMD, Flat Lead

재고110,814

Logic Level Gate

30V

4A, 3.7A

65 mOhm @ 3.1A, 10V

3V @ 250µA

7nC @ 10V

220pF @ 15V

3.12W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SLA5074

Sanken

MOSFET 4N-CH 60V 5A 15-SIP

FET Type: 4 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 4V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 4.8W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 15-SIP, Exposed Tab, Formed Leads
Supplier Device Package: 15-SIP

패키지: 15-SIP, Exposed Tab, Formed Leads

재고15,084

Logic Level Gate

60V

5A

300 mOhm @ 3A, 4V

2V @ 250µA

-

320pF @ 10V

4.8W

150°C (TJ)

Through Hole

15-SIP, Exposed Tab, Formed Leads

15-SIP

DMN2024UVT-13

Diodes Incorporated

MOSFET 2N-CH 20V 7A TSOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6

패키지: -

Request a Quote

-

20V

7A (Ta)

24mOhm @ 6.5A, 4.5V

900mV @ 250µA

7.1nC @ 4.5V

647pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-23-6

SH8M24GZETB

Rohm Semiconductor

MOSFET N/P-CH 45V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고27,324

-

45V

6A (Ta)

46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V

2.5V @ 1mA

9.6nC @ 5V, 18.2nC @ 5V

550pF @ 10V, 1700pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MSCSM70AM19CT1AG

Microchip Technology

SIC 2N-CH 700V 124A SP1F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Power - Max: 365W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP1F

패키지: -

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-

700V

124A (Tc)

19mOhm @ 40A, 20V

2.4V @ 4mA

215nC @ 20V

4500pF @ 700V

365W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP1F

EMH2308-TL-E

onsemi

MOSFET 2P-CH 20V 3A 8EMH

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 1.2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH

패키지: -

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Logic Level Gate

20V

3A

85mOhm @ 3A, 4.5V

-

4nC @ 4.5V

320pF @ 10V

1.2W

-

Surface Mount

8-SMD, Flat Lead

8-EMH

SQJ974EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 100V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

패키지: -

재고18,000

-

100V

30A (Tc)

25.5mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V

1050pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SIZF914DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 23.5A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V, 4670pF @ 10V
Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

패키지: -

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-

25V

23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)

3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V

2.4V @ 250µA, 2.2V @ 250µA

21nC @ 10V, 98nC @ 10V

1050pF @ 10V, 4670pF @ 10V

3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

NXV08A170DB2

onsemi

APM12-CBA, MV7 80V, AL2O3, HALF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 40V
Power - Max: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-PowerDIP Module (1.118", 28.40mm)
Supplier Device Package: APM12-CBA

패키지: -

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-

80V

200A (Tj)

0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V

4V @ 250µA

195nC @ 10V

14000pF @ 40V

-

175°C (TJ)

Through Hole

12-PowerDIP Module (1.118", 28.40mm)

APM12-CBA

MSCSM120AM31T1AG

Microchip Technology

SIC 2N-CH 1200V 89A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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-

1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 3mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SSFP4806

Good-Ark Semiconductor

MOSFET 2N-CH 40V 30A 8PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Power - Max: 46W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PPAK (5.1x5.71)

패키지: -

재고9,000

-

40V

30A (Tc)

9mOhm @ 8A, 10V

2.5V @ 250µA

24nC @ 4.5V

2200pF @ 25V

46W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PPAK (5.1x5.71)

IRFH7911TR2PBF

Infineon Technologies

MOSFET 2N-CH 30V 13A/28A PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Power - Max: 2.4W, 3.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 18-PowerVQFN
Supplier Device Package: PQFN (5x6)

패키지: -

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Logic Level Gate

30V

13A, 28A

8.6mOhm @ 12A, 10V

2.35V @ 25µA

12nC @ 4.5V

1060pF @ 15V

2.4W, 3.4W

-

Surface Mount

18-PowerVQFN

PQFN (5x6)

SSM6L14FE-TE85L-F

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Power - Max: 150mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고52,236

Logic Level Gate, 1.5V Drive

20V

800mA (Ta), 720mA (Ta)

240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V

1V @ 1mA

2nC @ 4.5V, 1.76nC @ 4.5V

90pF @ 10V, 110pF @ 10V

150mW (Ta)

150°C

Surface Mount

SOT-563, SOT-666

ES6

BSC155N06NDATMA1

Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Power - Max: 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: -

재고21,720

-

60V

20A (Tc)

15.5mOhm @ 17A, 10V

4V @ 20µA

29nC @ 10V

2250pF @ 30V

50W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4