페이지 92 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4914L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	패키지: 8-SOIC	재고36,000	Standard	30V	8A	20.5 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	865pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
SI9936BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 4.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고582,900	Logic Level Gate	30V	4.5A	35 mOhm @ 6A, 10V	3V @ 250µA	13nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FW906-TL-E	ON Semiconductor	MOSFET N/P-CH 30V 8A/6A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 6A Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V Power - Max: 2.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.173", 4.40mm Width)	재고5,904	Logic Level Gate	30V	8A, 6A	24 mOhm @ 8A, 10V	-	12nC @ 10V	690pF @ 10V	2.5W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
ECH8659-TL-H	ON Semiconductor	MOSFET 2N-CH 30V 7A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	패키지: 8-SMD, Flat Lead	재고25,476	Logic Level Gate	30V	7A	24 mOhm @ 3.5A, 10V	-	11.8nC @ 10V	710pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
UP04878G0L	Panasonic Electronic Components	MOSFET 2N-CH 50V .1A SSMINI-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Power - Max: 125mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMini6-F2	패키지: SOT-563, SOT-666	재고3,654,144	Logic Level Gate	50V	100mA	12 Ohm @ 10mA, 4V	1.5V @ 1µA	-	12pF @ 3V	125mW	125°C (TJ)	Surface Mount	SOT-563, SOT-666	SSMini6-F2
SI8904EDB-T2-E1	Vishay Siliconix	MOSFET 2N-CH 30V 3.8A 6-MFP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-MICRO FOOT?CSP Supplier Device Package: 6-Micro Foot?	패키지: 6-MICRO FOOT?CSP	재고4,624	Logic Level Gate	30V	3.8A	-	1.6V @ 250µA	-	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-MICRO FOOT?CSP	6-Micro Foot?
IPG20N06S4L14ATMA2	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: 8-PowerVDFN	재고6,944	Logic Level Gate	60V	20A	13.7 mOhm @ 17A, 10V	2.2V @ 20µA	39nC @ 10V	2890pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
APTSM120AM55CT1AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V Power - Max: 470W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고2,544	Silicon Carbide (SiC)	1200V (1.2kV)	74A (Tc)	50 mOhm @ 40A, 20V	3V @ 2mA	272nC @ 20V	5120pF @ 1000V	470W	-40°C ~ 175°C (TJ)	Chassis Mount	SP1	SP1
GWM100-0085X1-SMD SAM	IXYS	MOSFET 6N-CH 85V 103A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 103A Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	패키지: 17-SMD, Gull Wing	재고2,672	Standard	85V	103A	6.2 mOhm @ 75A, 10V	4V @ 250µA	114nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
GWM100-01X1-SLSAM	IXYS	MOSFET 6N-CH 100V 90A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	패키지: 17-SMD, Flat Leads	재고3,200	Standard	100V	90A	8.5 mOhm @ 80A, 10V	4.5V @ 250µA	90nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
FMP36-015P	IXYS	MOSFET N/P-CH 150V 36A/22A I4PAC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36A, 22A Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 125W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5	재고4,208	Standard	150V	36A, 22A	40 mOhm @ 31A, 10V	5.5V @ 250µA	70nC @ 10V	2250pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
SI4936BDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6.9A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고10,188	Logic Level Gate	30V	6.9A	35 mOhm @ 5.9A, 10V	3V @ 250µA	15nC @ 10V	530pF @ 15V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON6810	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 25A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V Power - Max: 4.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: 8-DFN-EP (5.2x5.55)	패키지: 8-SMD, Flat Lead Exposed Pad	재고3,792	Logic Level Gate	30V	25A	4.4 mOhm @ 20A, 10V	2.2V @ 250µA	34nC @ 10V	1720pF @ 15V	4.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead Exposed Pad	8-DFN-EP (5.2x5.55)
DMN2028UFU-13	Diodes Incorporated	MOSFET 2N-CH 20V 7.9A UDFN2020-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	패키지: 6-UFDFN Exposed Pad	재고6,640	Standard	20V	7.5A	20.2 mOhm @ 4.5A, 4.5V	1V @ 250µA	18.4nC @ 8V	887pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
BUK9K89-100E,115	Nexperia USA Inc.	MOSFET 2N-CH 100V 12.5A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.5A Rds On (Max) @ Id, Vgs: 85 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V Power - Max: 38W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: SOT-1205, 8-LFPAK56	재고7,456	Logic Level Gate	100V	12.5A	85 mOhm @ 5A, 10V	2.1V @ 1mA	16.8nC @ 10V	1108pF @ 25V	38W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
CSD87355Q5D	Texas Instruments	MOSFET 2N-CH 30V 8LSON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 15V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: - Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	패키지: 8-PowerLDFN	재고4,928	Standard	30V	-	-	1.9V @ 250µA	13.7nC @ 4.5V	1860pF @ 15V	12W	-55°C ~ 150°C (TJ)	-	8-PowerLDFN	8-LSON (5x6)
NTUD3170NZT5G	ON Semiconductor	MOSFET 2N-CH 20V 0.22A SOT-963 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: SOT-963	재고703,560	Logic Level Gate	20V	220mA	1.5 Ohm @ 100mA, 4.5V	1V @ 250µA	-	12.5pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
DMT6017LDV-13	Diodes Incorporated	MOSFET 2N-CH 25.3A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	패키지: -	Request a Quote	-	-	25.3A (Tc)	22mOhm @ 6A, 10V	2.3V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
DMTH6015LDVWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 9.2A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Power - Max: 1.46W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXD)	패키지: -	Request a Quote	-	60V	9.2A (Ta), 24.5A (Tc)	20.5mOhm @ 10A, 10V	2.5V @ 250µA	14.3nC @ 10V	825pF @ 30V	1.46W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXD)
TQM150NB04DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 40V 9A/39A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V Power - Max: 2.4W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	패키지: -	재고5,043	-	40V	9A (Ta), 39A (Tc)	15mOhm @ 9A, 10V	4V @ 250µA	18nC @ 10V	1135pF @ 20V	2.4W (Ta), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	8-PDFNU (5x6)
DMN62D2UVTQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	60V	455mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
AOSD62666E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 60V 9.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고43,119	Logic Level Gate	60V	9.5A (Ta)	14.5mOhm @ 9.5A, 10V	2.2V @ 250µA	10nC @ 4.5V	755pF @ 30V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDG6301N-F085	onsemi	MOSFET 2N-CH 25V 0.22A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88 (SC-70-6)	패키지: -	Request a Quote	Logic Level Gate	25V	220mA	4Ohm @ 220mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88 (SC-70-6)
QH8KB6TCR	Rohm Semiconductor	MOSFET 2N-CH 40V 8A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: -	재고17,850	-	40V	8A (Ta)	17.7mOhm @ 8A, 10V	2.5V @ 1mA	10.6nC @ 10V	530pF @ 20V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
TPIC1533DW	Texas Instruments	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120HM16CT3AG	Microchip Technology	SIC 4N-CH 1200V 173A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	패키지: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
DMN2030UCA4-7	Diodes Incorporated	MOSFET 2N-CH 20V 6.3A 4DSN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 523pF @ 10V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, DSBGA Supplier Device Package: X4-DSN1111-4	패키지: -	Request a Quote	-	20V	6.3A (Ta)	32mOhm @ 1.7A, 4.5V	1.4V @ 160µA	5.6nC @ 10V	523pF @ 10V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, DSBGA	X4-DSN1111-4
IPB13N03LBG	Infineon Technologies	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

AO4914L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

패키지: 8-SOIC

재고36,000

Standard

30V

8A

20.5 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

865pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

SI9936BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 4.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고582,900

Logic Level Gate

30V

4.5A

35 mOhm @ 6A, 10V

3V @ 250µA

13nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FW906-TL-E

ON Semiconductor

MOSFET N/P-CH 30V 8A/6A 8SOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 6A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V
Power - Max: 2.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.173", 4.40mm Width)

재고5,904

Logic Level Gate

30V

8A, 6A

24 mOhm @ 8A, 10V

-

12nC @ 10V

690pF @ 10V

2.5W

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

ECH8659-TL-H

ON Semiconductor

MOSFET 2N-CH 30V 7A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

패키지: 8-SMD, Flat Lead

재고25,476

Logic Level Gate

30V

7A

24 mOhm @ 3.5A, 10V

-

11.8nC @ 10V

710pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

UP04878G0L

Panasonic Electronic Components

MOSFET 2N-CH 50V .1A SSMINI-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Power - Max: 125mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F2

패키지: SOT-563, SOT-666

재고3,654,144

Logic Level Gate

50V

100mA

12 Ohm @ 10mA, 4V

1.5V @ 1µA

-

12pF @ 3V

125mW

125°C (TJ)

Surface Mount

SOT-563, SOT-666

SSMini6-F2

SI8904EDB-T2-E1

Vishay Siliconix

MOSFET 2N-CH 30V 3.8A 6-MFP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-MICRO FOOT?CSP
Supplier Device Package: 6-Micro Foot?

패키지: 6-MICRO FOOT?CSP

재고4,624

Logic Level Gate

30V

3.8A

-

1.6V @ 250µA

-

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-MICRO FOOT?CSP

6-Micro Foot?

IPG20N06S4L14ATMA2

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: 8-PowerVDFN

재고6,944

Logic Level Gate

60V

20A

13.7 mOhm @ 17A, 10V

2.2V @ 20µA

39nC @ 10V

2890pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

APTSM120AM55CT1AG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 3V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V
Power - Max: 470W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고2,544

Silicon Carbide (SiC)

1200V (1.2kV)

74A (Tc)

50 mOhm @ 40A, 20V

3V @ 2mA

272nC @ 20V

5120pF @ 1000V

470W

-40°C ~ 175°C (TJ)

Chassis Mount

SP1

GWM100-0085X1-SMD SAM

IXYS

MOSFET 6N-CH 85V 103A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 103A
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

패키지: 17-SMD, Gull Wing

재고2,672

Standard

85V

103A

6.2 mOhm @ 75A, 10V

4V @ 250µA

114nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL?

GWM100-01X1-SLSAM

IXYS

MOSFET 6N-CH 100V 90A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

패키지: 17-SMD, Flat Leads

재고3,200

Standard

100V

90A

8.5 mOhm @ 80A, 10V

4.5V @ 250µA

90nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Flat Leads

ISOPLUS-DIL?

FMP36-015P

IXYS

MOSFET N/P-CH 150V 36A/22A I4PAC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36A, 22A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 125W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

재고4,208

Standard

150V

36A, 22A

40 mOhm @ 31A, 10V

5.5V @ 250µA

70nC @ 10V

2250pF @ 25V

125W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

SI4936BDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6.9A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고10,188

Logic Level Gate

30V

6.9A

35 mOhm @ 5.9A, 10V

3V @ 250µA

15nC @ 10V

530pF @ 15V

2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AON6810

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 25A 8-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V
Power - Max: 4.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Exposed Pad
Supplier Device Package: 8-DFN-EP (5.2x5.55)

패키지: 8-SMD, Flat Lead Exposed Pad

재고3,792

Logic Level Gate

30V

25A

4.4 mOhm @ 20A, 10V

2.2V @ 250µA

34nC @ 10V

1720pF @ 15V

4.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead Exposed Pad

8-DFN-EP (5.2x5.55)

DMN2028UFU-13

Diodes Incorporated

MOSFET 2N-CH 20V 7.9A UDFN2020-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

패키지: 6-UFDFN Exposed Pad

재고6,640

Standard

20V

7.5A

20.2 mOhm @ 4.5A, 4.5V

1V @ 250µA

18.4nC @ 8V

887pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

BUK9K89-100E,115

Nexperia USA Inc.

MOSFET 2N-CH 100V 12.5A LFPAK56D

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
Power - Max: 38W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: SOT-1205, 8-LFPAK56

재고7,456

Logic Level Gate

100V

12.5A

85 mOhm @ 5A, 10V

2.1V @ 1mA

16.8nC @ 10V

1108pF @ 25V

38W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

CSD87355Q5D

Texas Instruments

MOSFET 2N-CH 30V 8LSON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 15V
Power - Max: 12W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (5x6)

패키지: 8-PowerLDFN

재고4,928

Standard

30V

-

1.9V @ 250µA

13.7nC @ 4.5V

1860pF @ 15V

12W

-55°C ~ 150°C (TJ)

-

8-PowerLDFN

8-LSON (5x6)

NTUD3170NZT5G

ON Semiconductor

MOSFET 2N-CH 20V 0.22A SOT-963

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Power - Max: 125mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: SOT-963

재고703,560

Logic Level Gate

20V

220mA

1.5 Ohm @ 100mA, 4.5V

1V @ 250µA

-

12.5pF @ 15V

125mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

DMT6017LDV-13

Diodes Incorporated

MOSFET 2N-CH 25.3A POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

패키지: -

Request a Quote

-

25.3A (Tc)

22mOhm @ 6A, 10V

2.3V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

DMTH6015LDVWQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Power - Max: 1.46W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXD)

패키지: -

Request a Quote

-

60V

9.2A (Ta), 24.5A (Tc)

20.5mOhm @ 10A, 10V

2.5V @ 250µA

14.3nC @ 10V

825pF @ 30V

1.46W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXD)

TQM150NB04DCR-RLG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 9A/39A 8PDFNU

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
Power - Max: 2.4W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFNU (5x6)

패키지: -

재고5,043

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40V

9A (Ta), 39A (Tc)

15mOhm @ 9A, 10V

4V @ 250µA

18nC @ 10V

1135pF @ 20V

2.4W (Ta), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

8-PDFNU (5x6)

DMN62D2UVTQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

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60V

455mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

AOSD62666E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 9.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
Power - Max: 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고43,119

Logic Level Gate

60V

9.5A (Ta)

14.5mOhm @ 9.5A, 10V

2.2V @ 250µA

10nC @ 4.5V

755pF @ 30V

2.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FDG6301N-F085

onsemi

MOSFET 2N-CH 25V 0.22A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88 (SC-70-6)

패키지: -

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Logic Level Gate

25V

220mA

4Ohm @ 220mA, 4.5V

1.5V @ 250µA

0.4nC @ 4.5V

9.5pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88 (SC-70-6)

QH8KB6TCR

Rohm Semiconductor

MOSFET 2N-CH 40V 8A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: -

재고17,850

-

40V

8A (Ta)

17.7mOhm @ 8A, 10V

2.5V @ 1mA

10.6nC @ 10V

530pF @ 20V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

TPIC1533DW

Texas Instruments

SMALL SIGNAL N-CHANNEL MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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MSCSM120HM16CT3AG

Microchip Technology

SIC 4N-CH 1200V 173A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

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1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

DMN2030UCA4-7

Diodes Incorporated

MOSFET 2N-CH 20V 6.3A 4DSN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 523pF @ 10V
Power - Max: 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, DSBGA
Supplier Device Package: X4-DSN1111-4

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20V

6.3A (Ta)

32mOhm @ 1.7A, 4.5V

1.4V @ 160µA

5.6nC @ 10V

523pF @ 10V

1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

4-XFBGA, DSBGA

X4-DSN1111-4

IPB13N03LBG

Infineon Technologies

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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