페이지 111 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  111/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PXAC201602FCV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.02GHz
  • Gain: 17.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360mA
  • Power - Output: 22.5W
  • Voltage - Rated: 65V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: H-37248-4
재고4,880
2.02GHz
17.7dB
28V
-
-
360mA
22.5W
65V
H-37248-4
H-37248-4
PTFA091201HL V1 R250
Infineon Technologies

IC FET RF LDMOS 120W PG-64248-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 110W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: PG-64248-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고7,232
960MHz
18.5dB
28V
10µA
-
750mA
110W
65V
2-Flatpack, Fin Leads, Flanged
PG-64248-2
PTFA041501GL V1
Infineon Technologies

IC FET RF LDMOS 150W PG-63248-2

  • Transistor Type: LDMOS
  • Frequency: 470MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: PG-63248-2
패키지: 2-Flatpack, Fin Leads
재고3,424
470MHz
21dB
28V
1µA
-
900mA
150W
65V
2-Flatpack, Fin Leads
PG-63248-2
ARF461CG
Microsemi Corporation

RF MOSFET N-CH 1000V TO247

  • Transistor Type: N-Channel
  • Frequency: 65MHz
  • Gain: 15dB
  • Voltage - Test: 50V
  • Current Rating: 25µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 150W
  • Voltage - Rated: 1000V
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고3,232
65MHz
15dB
50V
25µA
-
-
150W
1000V
TO-247-3
TO-247
NE5531079A-T1A-A
CEL

FET RF 30V 460MHZ 79A

  • Transistor Type: LDMOS
  • Frequency: 460MHz
  • Gain: -
  • Voltage - Test: 7.5V
  • Current Rating: 3A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 40dBm
  • Voltage - Rated: 30V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
패키지: 4-SMD, Flat Leads
재고3,648
460MHz
-
7.5V
3A
-
200mA
40dBm
30V
4-SMD, Flat Leads
79A
MRFE6S9045GNR1
NXP

FET RF 66V 880MHZ TO-270-2

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 22.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 10W
  • Voltage - Rated: 66V
  • Package / Case: TO-270BB
  • Supplier Device Package: TO-270 WB-4 Gull
패키지: TO-270BB
재고2,432
880MHz
22.1dB
28V
-
-
350mA
10W
66V
TO-270BB
TO-270 WB-4 Gull
MRFG35003ANR5
NXP

FET RF 15V 3.55GHZ PLD-1.5

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10.8dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 55mA
  • Power - Output: 3W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고3,408
3.55GHz
10.8dB
12V
-
-
55mA
3W
15V
PLD-1.5
PLD-1.5
BLF6G22-45,135
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT608A

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 405mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608A
  • Supplier Device Package: CDFM2
패키지: SOT-608A
재고4,880
2.11GHz ~ 2.17GHz
18.5dB
28V
-
-
405mA
2.5W
65V
SOT-608A
CDFM2
BLF6G20-110,112
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 29A
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고3,024
1.93GHz ~ 1.99GHz
19dB
28V
29A
-
900mA
25W
65V
SOT-502A
LDMOST
MRF19045LR5
NXP

FET RF 65V 1.93GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 14.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 9.5W
  • Voltage - Rated: 65V
  • Package / Case: NI-400
  • Supplier Device Package: NI-400-240
패키지: NI-400
재고2,096
1.93GHz
14.5dB
26V
-
-
550mA
9.5W
65V
NI-400
NI-400-240
hot MRF9210R3
NXP

FET RF 65V 880MHZ 860C3

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 16.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: NI-860C3
  • Supplier Device Package: NI-860C3
패키지: NI-860C3
재고6,096
880MHz
16.5dB
26V
-
-
1.9A
40W
65V
NI-860C3
NI-860C3
hot MRFG35010NT1
NXP

FET RF 15V 3.55GHZ 1.5-PLD

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 9W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고36,000
3.55GHz
10dB
12V
-
-
180mA
9W
15V
PLD-1.5
PLD-1.5
BLF3G21-6,112
Ampleon USA Inc.

RF FET LDMOS 65V 15.5DB SOT538A

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 15.5dB
  • Voltage - Test: 26V
  • Current Rating: 2.3A
  • Noise Figure: -
  • Current - Test: 90mA
  • Power - Output: 6W
  • Voltage - Rated: 65V
  • Package / Case: SOT-538A
  • Supplier Device Package: 2-CDIP
패키지: SOT-538A
재고2,100
2GHz
15.5dB
26V
2.3A
-
90mA
6W
65V
SOT-538A
2-CDIP
BLS7G3135LS-200U
Ampleon USA Inc.

RF FET LDMOS 65V 12DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 3.5GHz
  • Gain: 12dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고3,632
3.5GHz
12dB
32V
-
-
100mA
200W
65V
SOT-502B
SOT502B
MRFE6S9160HSR3
NXP

FET RF 66V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 66V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고5,280
880MHz
21dB
28V
-
-
1.2A
35W
66V
NI-780S
NI-780S
A2T20H160W04NR3
NXP

RF TRANS 2.0GHZ 160W OM780-4L

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,080
-
-
-
-
-
-
-
-
-
-
BLF8G38LS-75VJ
Ampleon USA Inc.

RF FET LDMOS 65V 15.5DB SOT1239B

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1239B
  • Supplier Device Package: CDFM6
패키지: SOT-1239B
재고4,960
3.4GHz ~ 3.6GHz
15.5dB
30V
-
-
600mA
20W
65V
SOT-1239B
CDFM6
BLF6G10LS-160RN,11
Ampleon USA Inc.

RF FET LDMOS 65V 22.5DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 922.5MHz ~ 957.5MHz
  • Gain: 22.5dB
  • Voltage - Test: 32V
  • Current Rating: 39A
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고7,600
922.5MHz ~ 957.5MHz
22.5dB
32V
39A
-
1.2A
32W
65V
SOT-502B
SOT502B
PD20010TR-E
STMicroelectronics

TRANS N-CH 40V POWERSO-10RF FORM

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 11dB
  • Voltage - Test: 13.6V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 10W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
재고3,328
2GHz
11dB
13.6V
5A
-
150mA
10W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
BLF8G20LS-200V,112
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1120B

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1120B
  • Supplier Device Package: CDFM6
패키지: SOT-1120B
재고6,944
1.81GHz ~ 1.88GHz
17.5dB
28V
-
-
1.6A
55W
65V
SOT-1120B
CDFM6
BLF871S,112
Ampleon USA Inc.

RF FET LDMOS 89V 19DB SOT467B

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 19dB
  • Voltage - Test: 40V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 100W
  • Voltage - Rated: 89V
  • Package / Case: SOT467B
  • Supplier Device Package: LDMOST
패키지: SOT467B
재고4,624
860MHz
19dB
40V
-
-
500mA
100W
89V
SOT467B
LDMOST
CGH60120D-GP4
MACOM Technology Solutions

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: 120W
  • Voltage - Rated: 84 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
재고270
6GHz
13dB
28 V
-
-
1 A
120W
84 V
Die
Die
A3T21H450W23SR6
NXP

RF MOSFET LDMOS 30V ACP1230S-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 15.4dB
  • Voltage - Test: 30 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 87W
  • Voltage - Rated: 65 V
  • Package / Case: ACP-1230S-4L2S
  • Supplier Device Package: ACP-1230S-4L2S
패키지: -
Request a Quote
2.11GHz ~ 2.2GHz
15.4dB
30 V
10µA
-
600 mA
87W
65 V
ACP-1230S-4L2S
ACP-1230S-4L2S
TBB1010KMTL-H
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
CLF3H0060-30U
Ampleon USA Inc.

RF MOSFET HEMT 50V CDFM2

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 30W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-1227A
  • Supplier Device Package: CDFM2
패키지: -
재고93
0Hz ~ 6GHz
17dB
50 V
-
-
60 mA
30W
150 V
SOT-1227A
CDFM2
A3G26H200W17SR3
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 14.2dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 34W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780S-4S2S
  • Supplier Device Package: NI-780S-4S2S
패키지: -
Request a Quote
2.496GHz ~ 2.69GHz
14.2dB
48 V
-
-
120 mA
34W
125 V
NI-780S-4S2S
NI-780S-4S2S
MWT-PH29F
CML Microcircuits

RF MOSFET PHEMT FET 3V CHIP

  • Transistor Type: pHEMT FET
  • Frequency: 26GHz
  • Gain: 11dB
  • Voltage - Test: 3 V
  • Current Rating: 330mA
  • Noise Figure: -
  • Current - Test: 1 mA
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: Die
  • Supplier Device Package: Chip
패키지: -
재고300
26GHz
11dB
3 V
330mA
-
1 mA
-
-
Die
Chip
CGHV31500F1
MACOM Technology Solutions

RF MOSFET HEMT 50V 440226

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 15dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 500W
  • Voltage - Rated: 50 V
  • Package / Case: 440226
  • Supplier Device Package: 440226
패키지: -
재고150
2.7GHz ~ 3.1GHz
15dB
50 V
-
-
500 mA
500W
50 V
440226
440226