페이지 109 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  109/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA241301F V1
Infineon Technologies

IC FET RF LDMOS 130W H-30260-2

  • Transistor Type: LDMOS
  • Frequency: 2.42GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.15A
  • Power - Output: 130W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-31260-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고3,488
2.42GHz
14dB
28V
10µA
-
1.15A
130W
65V
2-Flatpack, Fin Leads, Flanged
H-31260-2
MRFE6VP5600HSR6
NXP

FET RF 2CH 130V 230MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고5,264
230MHz
25dB
50V
-
-
100mA
600W
130V
NI-1230S
NI-1230S
BLF7G27L-90P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 720mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121A
  • Supplier Device Package: CDFM4
패키지: SOT-1121A
재고7,680
2.5GHz ~ 2.7GHz
18.5dB
28V
18A
-
720mA
16W
65V
SOT-1121A
CDFM4
hot MRF19085LR3
NXP

FET RF 65V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고6,880
1.93GHz ~ 1.99GHz
13dB
26V
-
-
850mA
18W
65V
NI-780
NI-780
hot MRF18030ALSR3
NXP

FET RF 65V 1.88GHZ NI-400S

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 14dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: NI-400S
  • Supplier Device Package: NI-400S
패키지: NI-400S
재고15,468
1.81GHz ~ 1.88GHz
14dB
26V
-
-
250mA
30W
65V
NI-400S
NI-400S
MRF6S19100HR5
NXP

FET RF 68V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 16.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 22W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고2,832
1.99GHz
16.1dB
28V
-
-
900mA
22W
68V
NI-780
NI-780
MRF6P21190HR6
NXP

FET RF 68V 2.12GHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 2.12GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 44W
  • Voltage - Rated: 68V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고7,584
2.12GHz
15.5dB
28V
-
-
1.9A
44W
68V
NI-1230
NI-1230
MRF5S19100HR5
NXP

FET RF 65V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 22W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고2,480
1.93GHz ~ 1.99GHz
13.9dB
28V
-
-
1A
22W
65V
NI-780
NI-780
BLF244,112
Ampleon USA Inc.

RF FET NCHA 65V 17DB SOT123A

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: 3A
  • Noise Figure: -
  • Current - Test: 25mA
  • Power - Output: 15W
  • Voltage - Rated: 65V
  • Package / Case: SOT-123A
  • Supplier Device Package: CRFM4
패키지: SOT-123A
재고3,216
175MHz
17dB
28V
3A
-
25mA
15W
65V
SOT-123A
CRFM4
BF1202WR,135
NXP

MOSFET N-CH DUAL GATE 4DFP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 30.5dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 12mA
  • Power - Output: -
  • Voltage - Rated: 10V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
패키지: SC-82A, SOT-343
재고4,368
400MHz
30.5dB
5V
30mA
0.9dB
12mA
-
10V
SC-82A, SOT-343
CMPAK-4
PTFA092201EV4R250XTMA1
Infineon Technologies

FET RF 65V 960MHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.85A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
패키지: 2-Flatpack, Fin Leads
재고3,152
960MHz
18.5dB
30V
10µA
-
1.85A
220W
65V
2-Flatpack, Fin Leads
H-36260-2
PTFC262157FHV1R0XTMA1
Infineon Technologies

RF MOSFET TRANSISTORS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,600
-
-
-
-
-
-
-
-
-
-
AFT18S290-13SR3
NXP

FET RF 65V 1.96GHZ NI-880X-2L4S

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 18.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-880XS-6
  • Supplier Device Package: NI-880XS-6
패키지: NI-880XS-6
재고5,840
1.96GHz
18.2dB
28V
-
-
2A
63W
65V
NI-880XS-6
NI-880XS-6
MRF7S15100HSR3
NXP

FET RF 65V 1.51GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 1.51GHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 23W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고5,200
1.51GHz
19.5dB
28V
-
-
600mA
23W
65V
NI-780S
NI-780S
BLC10M6XS200Z
Ampleon USA Inc.

BLC10M6XS200/SOT1270/TRAYDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,800
-
-
-
-
-
-
-
-
-
-
LET9060S
STMicroelectronics

IC RF POWER MOSFET N-CH PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 60W
  • Voltage - Rated: 80V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
패키지: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
재고5,104
960MHz
17.2dB
28V
12A
-
300mA
60W
80V
PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
PowerSO-10RF (Straight Lead)
CE3521M4
CEL

RF FET 4V 20GHZ SOT343

  • Transistor Type: pHEMT FET
  • Frequency: 20GHz
  • Gain: 11.9dB
  • Voltage - Test: 2V
  • Current Rating: 15mA
  • Noise Figure: 1.05dB
  • Current - Test: 10mA
  • Power - Output: 125mW
  • Voltage - Rated: 4V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: 4-Super Mini Mold
패키지: SC-82A, SOT-343
재고18,540
20GHz
11.9dB
2V
15mA
1.05dB
10mA
125mW
4V
SC-82A, SOT-343
4-Super Mini Mold
MW7IC2425NBR1
NXP

FET RF 65V 2.45GHZ TO-272-16

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 27.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 55mA
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: TO-272-16 Variant, Flat Leads
  • Supplier Device Package: TO-272 WB-16
패키지: TO-272-16 Variant, Flat Leads
재고3,600
2.45GHz
27.7dB
28V
-
-
55mA
25W
65V
TO-272-16 Variant, Flat Leads
TO-272 WB-16
hot MRFG35010ANT1
NXP

FET RF 15V 3.55GHZ PLD-1.5

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 9W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고11,544
3.55GHz
10dB
12V
-
-
130mA
9W
15V
PLD-1.5
PLD-1.5
RF3L05150CB4
STMicroelectronics

RF MOSFET LDMOS 28V LBB

  • Transistor Type: LDMOS
  • Frequency: 1GHz
  • Gain: 23dB
  • Voltage - Test: 28 V
  • Current Rating: 2.5A
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 150W
  • Voltage - Rated: 90 V
  • Package / Case: LBB
  • Supplier Device Package: LBB
패키지: -
재고66
1GHz
23dB
28 V
2.5A
-
500 mA
150W
90 V
LBB
LBB
C4H2327N55PZ
Ampleon USA Inc.

RF MOSFET GAN 50V 6DFN

  • Transistor Type: GaN
  • Frequency: 2.3GHz ~ 2.69GHz
  • Gain: 19.6dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30 mA
  • Power - Output: 50W
  • Voltage - Rated: 150 V
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (7x6.5)
패키지: -
재고2,523
2.3GHz ~ 2.69GHz
19.6dB
50 V
-
-
30 mA
50W
150 V
6-VDFN Exposed Pad
6-DFN (7x6.5)
BLP15M9S70GZ
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1483-1

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 23.5dB
  • Voltage - Test: 32 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 70W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1483-1
  • Supplier Device Package: SOT1483-1
패키지: -
Request a Quote
1.3GHz
23.5dB
32 V
1.4µA
-
200 mA
70W
65 V
SOT-1483-1
SOT1483-1
BLM7G1822S-20PBGYZ
Ampleon USA Inc.

RF FET LDMOS 65V 32.3DB SOT12121

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.805GHz ~ 2.17GHz
  • Gain: 32.3dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 76 mA
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1212-3
  • Supplier Device Package: 16-HSOP
패키지: -
Request a Quote
1.805GHz ~ 2.17GHz
32.3dB
28 V
1.4µA
-
76 mA
-
65 V
SOT-1212-3
16-HSOP
MWT-PH8F
CML Microcircuits

RF MOSFET PHEMT FET 3V CHIP

  • Transistor Type: pHEMT FET
  • Frequency: 26GHz
  • Gain: 12dB
  • Voltage - Test: 3 V
  • Current Rating: 300mA
  • Noise Figure: -
  • Current - Test: 1 mA
  • Power - Output: 30dBm
  • Voltage - Rated: -
  • Package / Case: Die
  • Supplier Device Package: Chip
패키지: -
재고270
26GHz
12dB
3 V
300mA
-
1 mA
30dBm
-
Die
Chip
PTFA091201E-V4-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750 mA
  • Power - Output: 110W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
패키지: -
Request a Quote
960MHz
19dB
28 V
10µA
-
750 mA
110W
65 V
2-Flatpack, Fin Leads
H-36248-2
STAC1214-250
STMicroelectronics

RF MOSFET LDMOS STAC265B

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 14dB
  • Voltage - Test: -
  • Current Rating: 2µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 260W
  • Voltage - Rated: 80 V
  • Package / Case: STAC265B
  • Supplier Device Package: STAC265B
패키지: -
Request a Quote
1.2GHz ~ 1.4GHz
14dB
-
2µA
-
-
260W
80 V
STAC265B
STAC265B
SD56060
STMicroelectronics

RF MOSFET LDMOS M246

  • Transistor Type: LDMOS
  • Frequency: 1MHz ~ 1GHz
  • Gain: 16dB
  • Voltage - Test: -
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 60W
  • Voltage - Rated: 65 V
  • Package / Case: M246
  • Supplier Device Package: M246
패키지: -
Request a Quote
1MHz ~ 1GHz
16dB
-
8A
-
-
60W
65 V
M246
M246
WS1A3640-V1-R3K
MACOM Technology Solutions

RF MOSFET GAN 48V 20LGA

  • Transistor Type: GaN
  • Frequency: 3.3GHz ~ 3.8GHz
  • Gain: 12.5dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70 mA
  • Power - Output: 10W
  • Voltage - Rated: 125 V
  • Package / Case: 20-TFLGA Exposed Pad
  • Supplier Device Package: 20-LGA (6x6)
패키지: -
Request a Quote
3.3GHz ~ 3.8GHz
12.5dB
48 V
-
-
70 mA
10W
125 V
20-TFLGA Exposed Pad
20-LGA (6x6)