페이지 123 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  123/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BG3130RE6327BTSA1
Infineon Technologies

MOSFET N-CH DUAL 8V SOT-363

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 800MHz
  • Gain: 24dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.3dB
  • Current - Test: 14mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고6,480
800MHz
24dB
5V
25mA
1.3dB
14mA
-
8V
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
MAGX-002731-180L0S
M/A-Com Technology Solutions

TRANSISTOR RF 180W GAN

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 11.8dB
  • Voltage - Test: 50V
  • Current Rating: 10A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 215W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,856
2.7GHz ~ 3.1GHz
11.8dB
50V
10A
-
500mA
215W
65V
-
-
MAGX-000025-150000
M/A-Com Technology Solutions

TRANSISTOR RF 150W GAN

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: 5.5A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 170W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,520
1.2GHz ~ 1.4GHz
18dB
50V
5.5A
-
600mA
170W
65V
-
-
BLF7G24L-140,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고4,544
2.3GHz ~ 2.4GHz
18.5dB
28V
28A
-
1.3A
30W
65V
SOT-502A
LDMOST
BLF7G27L-75P,112
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 650mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121A
  • Supplier Device Package: CDFM4
패키지: SOT-1121A
재고2,992
2.3GHz ~ 2.4GHz
17dB
28V
18A
-
650mA
12W
65V
SOT-1121A
CDFM4
ON5264,127
NXP

MOSFET RF TO220AB TO220AB

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고2,256
-
-
-
-
-
-
-
-
TO-220-3
TO-220AB
MRF6V2010GNR5
NXP

FET RF 110V 220MHZ TO-270-2

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 23.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 10W
  • Voltage - Rated: 110V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고2,880
220MHz
23.9dB
50V
-
-
30mA
10W
110V
TO-270AA
TO-270-2
BLF6G22LS-180RN,11
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 16dB
  • Voltage - Test: 30V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고5,824
2.11GHz ~ 2.17GHz
16dB
30V
49A
-
1.4A
40W
65V
SOT-502B
SOT502B
hot MRF19045LR3
NXP

FET RF 65V 1.93GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 14.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 9.5W
  • Voltage - Rated: 65V
  • Package / Case: NI-400
  • Supplier Device Package: NI-400-240
패키지: NI-400
재고5,536
1.93GHz
14.5dB
26V
-
-
550mA
9.5W
65V
NI-400
NI-400-240
MRF9030LR1
NXP

FET RF 68V 945MHZ NI-360

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 19dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 68V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360
패키지: NI-360
재고6,256
945MHz
19dB
26V
-
-
250mA
30W
68V
NI-360
NI-360
MRFG35002N6R5
NXP

FET RF 8V 3.55GHZ

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 6V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 65mA
  • Power - Output: 1.5W
  • Voltage - Rated: 8V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고6,160
3.55GHz
10dB
6V
-
-
65mA
1.5W
8V
PLD-1.5
PLD-1.5
BLF242,112
Ampleon USA Inc.

RF FET NCHA 65V 16DB SOT123A

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 1A
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-123A
  • Supplier Device Package: CRFM4
패키지: SOT-123A
재고5,456
175MHz
16dB
28V
1A
-
10mA
5W
65V
SOT-123A
CRFM4
PD84010S-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 16.3dB
  • Voltage - Test: 7.5V
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 2W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
패키지: PowerSO-10 Exposed Bottom Pad
재고4,880
870MHz
16.3dB
7.5V
8A
-
300mA
2W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
BF1101R,215
NXP

MOSFET N-CH 7V DUAL SOT143R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1.7dB
  • Current - Test: 12mA
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
패키지: SOT-143R
재고2,208
800MHz
-
5V
30mA
1.7dB
12mA
-
7V
SOT-143R
SOT-143R
2729GN-150
Microsemi Corporation

FET RF N-CH 150V 2.9GHZ 55-QP

  • Transistor Type: N-Channel
  • Frequency: 2.7GHz ~ 2.9GHz
  • Gain: 12.7dB ~ 13.2dB
  • Voltage - Test: 60V
  • Current Rating: 2.5mA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 165W
  • Voltage - Rated: 150V
  • Package / Case: 55QP
  • Supplier Device Package: 55QP
패키지: 55QP
재고5,184
2.7GHz ~ 2.9GHz
12.7dB ~ 13.2dB
60V
2.5mA
-
250mA
165W
150V
55QP
55QP
BLA9G1011L-300U
Ampleon USA Inc.

BLA9G1011L-300/SOT502/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,016
-
-
-
-
-
-
-
-
-
-
SD2932BW
STMicroelectronics

IC TRANS RF PWR HF/VHF/UHF M244

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,912
-
-
-
-
-
-
-
-
-
-
MRF8HP21080HSR3
NXP

FET RF 2CH 65V 2.17GHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 14.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고2,608
2.17GHz
14.4dB
28V
-
-
150mA
16W
65V
NI-780S-4
NI-780S-4
PD55003S-E
STMicroelectronics

FET RF 40V 500MHZ PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 17dB
  • Voltage - Test: 12.5V
  • Current Rating: 2.5A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 3W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
패키지: PowerSO-10 Exposed Bottom Pad
재고5,344
500MHz
17dB
12.5V
2.5A
-
50mA
3W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
PD57018-E
STMicroelectronics

FET RF 65V 945MHZ PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 2.5A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고4,928
945MHz
16.5dB
28V
2.5A
-
100mA
18W
65V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
CGH60060D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 60W
  • Voltage - Rated: 84V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,504
6GHz
13dB
28V
-
-
400mA
60W
84V
Die
Die
CGHV60040D
Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 65mA
  • Power - Output: 40W
  • Voltage - Rated: 150V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고8,208
6GHz
17dB
50V
-
-
65mA
40W
150V
Die
Die
BB503CCS-TL-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTFB090901FA-V2-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
GTRA374902FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 3.6GHz ~ 3.7GHz
  • Gain: 12dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250 mA
  • Power - Output: 450W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
Request a Quote
3.6GHz ~ 3.7GHz
12dB
48 V
-
-
250 mA
450W
125 V
H-37248C-4
H-37248C-4
GTRB097152FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT H-37248C-4 50PCS

  • Transistor Type: HEMT
  • Frequency: 758MHz ~ 960MHz
  • Gain: 18dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 900W
  • Voltage - Rated: 48 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
Request a Quote
758MHz ~ 960MHz
18dB
-
-
-
-
900W
48 V
H-37248C-4
H-37248C-4
MRF21125R3
Freescale Semiconductor

RF MOSFET 28V NI880H

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6 A
  • Power - Output: 125W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-957A
  • Supplier Device Package: NI-880H-2L
패키지: -
Request a Quote
2.11GHz ~ 2.17GHz
13dB
28 V
10µA
-
1.6 A
125W
65 V
SOT-957A
NI-880H-2L
ART2K0PEY
Ampleon USA Inc.

RF MOSFET LDMOS 65V OMP1230

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1MHz ~ 450MHz
  • Gain: 26.9dB
  • Voltage - Test: 65 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 2000W
  • Voltage - Rated: 200 V
  • Package / Case: OMP-1230-4F-1
  • Supplier Device Package: OMP-1230-4F-1
패키지: -
재고285
1MHz ~ 450MHz
26.9dB
65 V
1.4µA
-
150 mA
2000W
200 V
OMP-1230-4F-1
OMP-1230-4F-1