페이지 125 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  125/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA070601EV4XWSA1
Infineon Technologies

FET RF LDMOS 60W H36265-2

  • Transistor Type: LDMOS
  • Frequency: 760MHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36265-2
패키지: 2-Flatpack, Fin Leads
재고6,080
760MHz
19.5dB
28V
-
-
600mA
60W
65V
2-Flatpack, Fin Leads
H-36265-2
BF244B_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 50MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 50mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고2,464
100MHz
-
15V
50mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRFE6S9135HR3
NXP

FET RF 66V 940MHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 940MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 39W
  • Voltage - Rated: 66V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고7,648
940MHz
21dB
28V
-
-
1A
39W
66V
NI-880
NI-880
MRF6S9130HR3
NXP

FET RF 68V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고5,216
880MHz
19.2dB
28V
-
-
950mA
27W
68V
NI-780
NI-780
MRF5S19130HR5
NXP

FET RF 65V 1.99GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 26W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고4,016
1.93GHz ~ 1.99GHz
13dB
28V
-
-
1.2A
26W
65V
NI-880
NI-880
BLF1822-10,112
Ampleon USA Inc.

RF FET LDMOS 65V 13.5DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 13.5dB
  • Voltage - Test: 26V
  • Current Rating: 2.2A
  • Noise Figure: -
  • Current - Test: 85mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
패키지: SOT467C
재고6,960
2.2GHz
13.5dB
26V
2.2A
-
85mA
10W
65V
SOT467C
SOT467C
PTVA123501ECV2R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,672
-
-
-
-
-
-
-
-
-
-
PTVA120251EAV2R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,024
-
-
-
-
-
-
-
-
-
-
BLS9G2729L-350U
Ampleon USA Inc.

BLS9G2729L-350/SOT502/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,504
-
-
-
-
-
-
-
-
-
-
BLF178XRS,112
Ampleon USA Inc.

RF FET LDMOS 110V 28DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 28dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40mA
  • Power - Output: 1400W
  • Voltage - Rated: 110V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
패키지: SOT539B
재고6,832
108MHz
28dB
50V
-
-
40mA
1400W
110V
SOT539B
SOT539B
hot MRF6V3090NR5
NXP

FET RF 110V 860MHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 110V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고4,064
860MHz
22dB
50V
-
-
350mA
18W
110V
TO-270AB
TO-270 WB-4
A2I08H040GNR1
NXP

IC RF LDMOS AMP

  • Transistor Type: LDMOS (Dual)
  • Frequency: 920MHz
  • Gain: 30.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 25mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: TO-270-15 Variant, Gull Wing
  • Supplier Device Package: TO-270WBG-15
패키지: TO-270-15 Variant, Gull Wing
재고6,080
920MHz
30.7dB
28V
-
-
25mA
9W
65V
TO-270-15 Variant, Gull Wing
TO-270WBG-15
hot SKY65050-372LF
Skyworks Solutions Inc.

IC PHEMT 2.4GHZ 70MA LN SC70-4

  • Transistor Type: pHEMT FET
  • Frequency: 2.4GHz
  • Gain: 15.5dB
  • Voltage - Test: 3V
  • Current Rating: 55mA
  • Noise Figure: 0.4dB
  • Current - Test: 20mA
  • Power - Output: 10.5dBm
  • Voltage - Rated: 6V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SC-70-4
패키지: SC-82A, SOT-343
재고6,240
2.4GHz
15.5dB
3V
55mA
0.4dB
20mA
10.5dBm
6V
SC-82A, SOT-343
SC-70-4
CE3514M4
CEL

RF FET 4V 12GHZ SOT343

  • Transistor Type: pHEMT FET
  • Frequency: 12GHz
  • Gain: 12.2dB
  • Voltage - Test: 2V
  • Current Rating: 15mA
  • Noise Figure: 0.62dB
  • Current - Test: 10mA
  • Power - Output: 125mW
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-Super Mini Mold
패키지: 4-SMD, Flat Leads
재고15,984
12GHz
12.2dB
2V
15mA
0.62dB
10mA
125mW
4V
4-SMD, Flat Leads
4-Super Mini Mold
BLF8G10LS-160,118
Ampleon USA Inc.

RF FET LDMOS 65V 19.7DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 19.7dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고2,128
920MHz ~ 960MHz
19.7dB
30V
-
-
1.1A
35W
65V
SOT-502B
SOT502B
AFT05MS031NR1
NXP

FET RF 40V 520MHZ TO-270-2

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 17.7dB
  • Voltage - Test: 13.6V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 31W
  • Voltage - Rated: 40V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고4,512
520MHz
17.7dB
13.6V
-
-
10mA
31W
40V
TO-270AA
TO-270-2
BLC8G20LS-310AVZ
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT12583

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 650mA
  • Power - Output: 56W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1258-3
  • Supplier Device Package: DFM6
패키지: SOT-1258-3
재고4,672
1.93GHz ~ 1.99GHz
17dB
28V
-
-
650mA
56W
65V
SOT-1258-3
DFM6
BLF8G22LS-205VJ
Ampleon USA Inc.

RF FET LDMOS 65V 18.3DB SOT1239B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 50.1W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1239B
  • Supplier Device Package: CDFM6
패키지: SOT-1239B
재고6,736
2.11GHz ~ 2.17GHz
18.3dB
28V
-
-
1.2A
50.1W
65V
SOT-1239B
CDFM6
BLL6H0514LS-130,11
Ampleon USA Inc.

RF FET LDMOS 100V 17DB SOT1135B

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 130W
  • Voltage - Rated: 100V
  • Package / Case: SOT-1135B
  • Supplier Device Package: CDFM2
패키지: SOT-1135B
재고7,776
1.2GHz ~ 1.4GHz
17dB
50V
18A
-
50mA
130W
100V
SOT-1135B
CDFM2
BLF6G38LS-50,118
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 16.5A
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고3,728
3.4GHz ~ 3.6GHz
14dB
28V
16.5A
-
450mA
9W
65V
SOT-502B
SOT502B
PTFB091802FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4 A
  • Power - Output: 55W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
960MHz
19.5dB
28 V
-
-
1.4 A
55W
65 V
H-37248-4
H-37248-4
GTVA107001EC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 50V H-36248-2

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 890W
  • Voltage - Rated: 125 V
  • Package / Case: H-36248-2
  • Supplier Device Package: H-36248-2
패키지: -
Request a Quote
960MHz ~ 1.215GHz
20dB
50 V
-
-
100 mA
890W
125 V
H-36248-2
H-36248-2
BLF13H9LS750PU
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT539B

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 19dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 750W
  • Voltage - Rated: 108 V
  • Package / Case: SOT-539B
  • Supplier Device Package: SOT539B
패키지: -
재고99
1.3GHz
19dB
50 V
2.8µA
-
200 mA
750W
108 V
SOT-539B
SOT539B
RF3L05200CB4
STMicroelectronics

RF MOSFET LDMOS LBB

  • Transistor Type: LDMOS
  • Frequency: 1GHz
  • Gain: 19dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 200W
  • Voltage - Rated: 90 V
  • Package / Case: LBB
  • Supplier Device Package: LBB
패키지: -
Request a Quote
1GHz
19dB
-
1µA
-
-
200W
90 V
LBB
LBB
GTVA262701FA-V2-R2
MACOM Technology Solutions

RF MOSFET HEMT 48V H-87265J-2

  • Transistor Type: HEMT
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 17dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 320 mA
  • Power - Output: 270W
  • Voltage - Rated: 125 V
  • Package / Case: H-87265J-2
  • Supplier Device Package: H-87265J-2
패키지: -
Request a Quote
2.62GHz ~ 2.69GHz
17dB
48 V
-
-
320 mA
270W
125 V
H-87265J-2
H-87265J-2
MRFE8VP8600HSR5
NXP

RF MOSFET LDMOS 50V NI1230

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 21dB
  • Voltage - Test: 50 V
  • Current Rating: 20µA
  • Noise Figure: -
  • Current - Test: 1.4 A
  • Power - Output: 140W
  • Voltage - Rated: 115 V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
패키지: -
Request a Quote
860MHz
21dB
50 V
20µA
-
1.4 A
140W
115 V
NI-1230-4S
NI-1230-4S
BLC9G21LS-60AVY
Ampleon USA Inc.

RF MOSFET LDMOS 28V DFM6

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 2.2GHz
  • Gain: 17.5dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 60W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
패키지: -
재고285
1.805GHz ~ 2.2GHz
17.5dB
28 V
1.4µA
-
100 mA
60W
65 V
SOT-1275-1
DFM6
1214GN-50EP
Microchip Technology

RF MOSFET GAN 50V

  • Transistor Type: GaN
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 15.9dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 20 mA
  • Power - Output: 58W
  • Voltage - Rated: 150 V
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
1.2GHz ~ 1.4GHz
15.9dB
50 V
-
-
20 mA
58W
150 V
Module
-