페이지 22 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Frequency	Gain	Voltage - Test	Current Rating	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
PTFA260851E V1	Infineon Technologies	FET RF 65V 2.68GHZ H-30248-2 Transistor Type: LDMOS Frequency: 2.68GHz Gain: 14dB Voltage - Test: 28V Current Rating: 10µA Noise Figure: - Current - Test: 900mA Power - Output: 85W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-30248-2	패키지: 2-Flatpack, Fin Leads, Flanged	재고3,440	2.68GHz	14dB	28V	10µA	-	900mA	85W	65V	2-Flatpack, Fin Leads, Flanged	H-30248-2
ARF440	Microsemi Corporation	PWR MOSFET RF N-CH 150V TO-247AD Transistor Type: N-Channel Frequency: 13.56MHz Gain: 21dB Voltage - Test: 50V Current Rating: 11A Noise Figure: - Current - Test: 200mA Power - Output: 125W Voltage - Rated: 150V Package / Case: TO-247-3 Supplier Device Package: TO-247AD	패키지: TO-247-3	재고3,120	13.56MHz	21dB	50V	11A	-	200mA	125W	150V	TO-247-3	TO-247AD
NE5550779A-T1-A	CEL	FET RF 30V 900MHZ 79A-PKG Transistor Type: LDMOS Frequency: 900MHz Gain: 22dB Voltage - Test: 7.5V Current Rating: 2.1A Noise Figure: - Current - Test: 140mA Power - Output: 38.5dBm Voltage - Rated: 30V Package / Case: 4-SMD, Flat Leads Supplier Device Package: 79A	패키지: 4-SMD, Flat Leads	재고3,248	900MHz	22dB	7.5V	2.1A	-	140mA	38.5dBm	30V	4-SMD, Flat Leads	79A
NE3517S03-T1C-A	CEL	FET RF 4V 20GHZ S03 Transistor Type: HFET Frequency: 20GHz Gain: 13.5dB Voltage - Test: 2V Current Rating: 15mA Noise Figure: 0.7dB Current - Test: 10mA Power - Output: - Voltage - Rated: 4V Package / Case: 4-SMD, Flat Leads Supplier Device Package: S03	패키지: 4-SMD, Flat Leads	재고9,684	20GHz	13.5dB	2V	15mA	0.7dB	10mA	-	4V	4-SMD, Flat Leads	S03
MRF6VP41KHSR7	NXP	FET RF 2CH 110V 450MHZ NI1230S Transistor Type: LDMOS (Dual) Frequency: 450MHz Gain: 20dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 150mA Power - Output: 1000W Voltage - Rated: 110V Package / Case: NI-1230S Supplier Device Package: NI-1230S	패키지: NI-1230S	재고2,736	450MHz	20dB	50V	-	-	150mA	1000W	110V	NI-1230S	NI-1230S
MRF6S18140HR3	NXP	FET RF 68V 1.88GHZ NI880 Transistor Type: LDMOS Frequency: 1.88GHz Gain: 16dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.2A Power - Output: 29W Voltage - Rated: 68V Package / Case: NI-880 Supplier Device Package: NI-880	패키지: NI-880	재고3,360	1.88GHz	16dB	28V	-	-	1.2A	29W	68V	NI-880	NI-880
MRF9060LSR5	NXP	FET RF 65V 945MHZ NI-360S Transistor Type: LDMOS Frequency: 945MHz Gain: 17dB Voltage - Test: 26V Current Rating: - Noise Figure: - Current - Test: 450mA Power - Output: 60W Voltage - Rated: 65V Package / Case: NI-360S Supplier Device Package: NI-360 Short Lead	패키지: NI-360S	재고2,240	945MHz	17dB	26V	-	-	450mA	60W	65V	NI-360S	NI-360 Short Lead
BLF7G22LS-130,112	Ampleon USA Inc.	RF FET LDMOS 65V 18.5DB SOT502B Transistor Type: LDMOS Frequency: 2.11GHz ~ 2.17GHz Gain: 18.5dB Voltage - Test: 28V Current Rating: 28A Noise Figure: - Current - Test: 950mA Power - Output: 30W Voltage - Rated: 65V Package / Case: SOT-502B Supplier Device Package: SOT502B	패키지: SOT-502B	재고7,904	2.11GHz ~ 2.17GHz	18.5dB	28V	28A	-	950mA	30W	65V	SOT-502B	SOT502B
PTFB182503FLV2R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,504	-	-	-	-	-	-	-	-	-	-
BLF2425M6L180P,112	Ampleon USA Inc.	RF FET LDMOS 65V 13.3DB SOT539A Transistor Type: LDMOS (Dual), Common Source Frequency: 2.45GHz Gain: 13.3dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 10mA Power - Output: 180W Voltage - Rated: 65V Package / Case: SOT539A Supplier Device Package: SOT539A	패키지: SOT539A	재고5,504	2.45GHz	13.3dB	28V	-	-	10mA	180W	65V	SOT539A	SOT539A
BLF8G24LS-150VJ	Ampleon USA Inc.	RF FET LDMOS 65V 19DB SOT1244B Transistor Type: LDMOS Frequency: 2.3GHz ~ 2.4GHz Gain: 19dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.3A Power - Output: 45W Voltage - Rated: 65V Package / Case: SOT-1244B Supplier Device Package: CDFM6	패키지: SOT-1244B	재고2,800	2.3GHz ~ 2.4GHz	19dB	28V	-	-	1.3A	45W	65V	SOT-1244B	CDFM6
AFT18S230-12NR3	NXP	IC TRANS RF LDMOS Transistor Type: LDMOS Frequency: 1.88GHz Gain: 17.6dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.4A Power - Output: 50W Voltage - Rated: 65V Package / Case: OM-780-2L2L Supplier Device Package: OM-780-2L2L	패키지: OM-780-2L2L	재고48,000	1.88GHz	17.6dB	28V	-	-	1.4A	50W	65V	OM-780-2L2L	OM-780-2L2L
MRF6V3090NBR1	NXP	FET RF 110V 860MHZ TO272-4 Transistor Type: LDMOS Frequency: 860MHz Gain: 22dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 350mA Power - Output: 18W Voltage - Rated: 110V Package / Case: TO-272BB Supplier Device Package: TO-272 WB-4	패키지: TO-272BB	재고4,304	860MHz	22dB	50V	-	-	350mA	18W	110V	TO-272BB	TO-272 WB-4
ARF463BG	Microsemi Corporation	RF PWR MOSFET 500V 9A TO-247 Transistor Type: N-Channel Frequency: 81.36MHz Gain: 15dB Voltage - Test: 125V Current Rating: 9A Noise Figure: - Current - Test: 50mA Power - Output: 100W Voltage - Rated: 500V Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고4,352	81.36MHz	15dB	125V	9A	-	50mA	100W	500V	TO-247-3	TO-247
AFT20S015NR1	NXP	FET RF 65V 2.17GHZ TO270-2 Transistor Type: LDMOS Frequency: 2.17GHz Gain: 17.6dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 132mA Power - Output: 1.5W Voltage - Rated: 65V Package / Case: TO-270AA Supplier Device Package: TO-270-2	패키지: TO-270AA	재고3,232	2.17GHz	17.6dB	28V	-	-	132mA	1.5W	65V	TO-270AA	TO-270-2
BF1108R,215	NXP	IC RF SWITCH SOT-143R Transistor Type: N-Channel Frequency: - Gain: - Voltage - Test: - Current Rating: 10mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 3V Package / Case: SOT-143R Supplier Device Package: SOT-143R	패키지: SOT-143R	재고3,312	-	-	-	10mA	-	-	-	3V	SOT-143R	SOT-143R
BLP05H6350XRGY	Ampleon USA Inc.	RF FET LDMOS 135V 27DB SOT12242 Transistor Type: LDMOS (Dual), Common Source Frequency: 108MHz Gain: 27dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 350W Voltage - Rated: 135V Package / Case: SOT-1224-2 Supplier Device Package: -	패키지: SOT-1224-2	재고6,704	108MHz	27dB	50V	-	-	100mA	350W	135V	SOT-1224-2	-
SD57045	STMicroelectronics	FET RF 65V 945MHZ M243 Transistor Type: LDMOS Frequency: 945MHz Gain: 15dB Voltage - Test: 28V Current Rating: 5A Noise Figure: - Current - Test: 250mA Power - Output: 45W Voltage - Rated: 65V Package / Case: M243 Supplier Device Package: M243	패키지: M243	재고4,016	945MHz	15dB	28V	5A	-	250mA	45W	65V	M243	M243
MWT-773	Microwave Technology Inc.	FET RF 5V 26GHZ PKG 73 Transistor Type: MESFET Frequency: 500MHz ~ 26GHz Gain: 8dB Voltage - Test: 3V Current Rating: 98mA Noise Figure: 12dB Current - Test: 10mA Power - Output: 20dBm Voltage - Rated: 5V Package / Case: Nonstandard SMD Supplier Device Package: 73	패키지: Nonstandard SMD	재고5,248	500MHz ~ 26GHz	8dB	3V	98mA	12dB	10mA	20dBm	5V	Nonstandard SMD	73
PD57006S-E	STMicroelectronics	FET RF 65V 945MHZ PWRSO-10 Transistor Type: LDMOS Frequency: 945MHz Gain: 15dB Voltage - Test: 28V Current Rating: 1A Noise Figure: - Current - Test: 70mA Power - Output: 6W Voltage - Rated: 65V Package / Case: PowerSO-10 Exposed Bottom Pad Supplier Device Package: PowerSO-10RF (Straight Lead)	패키지: PowerSO-10 Exposed Bottom Pad	재고10,200	945MHz	15dB	28V	1A	-	70mA	6W	65V	PowerSO-10 Exposed Bottom Pad	PowerSO-10RF (Straight Lead)
PD55035-E	STMicroelectronics	FET RF 40V 500MHZ PWRSO-10 Transistor Type: LDMOS Frequency: 500MHz Gain: 16.9dB Voltage - Test: 12.5V Current Rating: 7A Noise Figure: - Current - Test: 200mA Power - Output: 35W Voltage - Rated: 40V Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Supplier Device Package: PowerSO-10RF (Formed Lead)	패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	재고11,280	500MHz	16.9dB	12.5V	7A	-	200mA	35W	40V	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	PowerSO-10RF (Formed Lead)
MMBFJ310	Fairchild/ON Semiconductor	JFET N-CH 25V 60MA SOT23 Transistor Type: N-Channel JFET Frequency: 450MHz Gain: 12dB Voltage - Test: 10V Current Rating: 60mA Noise Figure: 3dB Current - Test: 10mA Power - Output: - Voltage - Rated: 25V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고65,580	450MHz	12dB	10V	60mA	3dB	10mA	-	25V	TO-236-3, SC-59, SOT-23-3	SOT-23-3
TBB1016RMTL-E	Renesas Electronics Corporation	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
BLP9LA25SGZ	Ampleon USA Inc.	RF MOSFET LDMOS SOT1483-1 Transistor Type: LDMOS Frequency: 1MHz ~ 941MHz Gain: 18.4dB Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: 25W Voltage - Rated: 13.6 V Package / Case: SOT-1483-1 Supplier Device Package: SOT1483-1	패키지: -	재고987	1MHz ~ 941MHz	18.4dB	-	-	-	-	25W	13.6 V	SOT-1483-1	SOT1483-1
PTVA035002EV-V1-R0	MACOM Technology Solutions	RF MOSFET LDMOS 50V H-36275-4 Transistor Type: LDMOS Frequency: 390MHz ~ 450MHz Gain: 18dB Voltage - Test: 50 V Current Rating: - Noise Figure: - Current - Test: 500 mA Power - Output: 500W Voltage - Rated: 105 V Package / Case: H-36275-4 Supplier Device Package: H-36275-4	패키지: -	Request a Quote	390MHz ~ 450MHz	18dB	50 V	-	-	500 mA	500W	105 V	H-36275-4	H-36275-4
CG2H80045D-GP4	MACOM Technology Solutions	RF MOSFET HEMT 28V DIE Transistor Type: HEMT Frequency: 8GHz Gain: 15dB Voltage - Test: 28 V Current Rating: - Noise Figure: - Current - Test: 500 mA Power - Output: 45W Voltage - Rated: 120 V Package / Case: Die Supplier Device Package: Die	패키지: -	재고114	8GHz	15dB	28 V	-	-	500 mA	45W	120 V	Die	Die
DU2860U	MACOM Technology Solutions	RF MOSFET LDMOS 28V Transistor Type: LDMOS Frequency: 2MHz ~ 175MHz Gain: 13dB Voltage - Test: 28 V Current Rating: 3mA Noise Figure: - Current - Test: 300 mA Power - Output: 60W Voltage - Rated: 65 V Package / Case: 4L-FLG Supplier Device Package: -	패키지: -	Request a Quote	2MHz ~ 175MHz	13dB	28 V	3mA	-	300 mA	60W	65 V	4L-FLG	-
BB301CAW-TL-E	Renesas Electronics Corporation	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-