페이지 24 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  24/138
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Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
BLF7G27L-90P,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 720mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121A
  • Supplier Device Package: CDFM4
패키지: SOT-1121A
재고3,696
2.5GHz ~ 2.7GHz
18.5dB
28V
18A
-
720mA
16W
65V
SOT-1121A
CDFM4
MRF7S19210HR5
NXP

FET RF 65V 1.99GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고3,808
1.99GHz
20dB
28V
-
-
1.4A
63W
65V
NI-780
NI-780
hot MRF19125R3
NXP

FET RF 65V 1.93GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 13.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 24W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고7,980
1.93GHz
13.5dB
26V
-
-
1.3A
24W
65V
NI-880
NI-880
hot MRF6S27050HR3
NXP

FET RF 68V 2.62GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.62GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 7W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고9,132
2.62GHz
16dB
28V
-
-
500mA
7W
68V
NI-780
NI-780
MRF6S21100HSR5
NXP

FET RF 68V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 23W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,152
2.11GHz ~ 2.17GHz
15.9dB
28V
-
-
950mA
23W
68V
NI-780S
NI-780S
MRF6S21060MBR1
NXP

FET RF 68V 2.12GHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 2.12GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 610mA
  • Power - Output: 14W
  • Voltage - Rated: 68V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272-4
재고4,384
2.12GHz
15.5dB
28V
-
-
610mA
14W
68V
TO-272-4
TO-272 WB-4
MRF5S9150HR3
NXP

FET RF 68V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 33W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고6,704
880MHz
19.7dB
28V
-
-
1.5A
33W
68V
NI-780
NI-780
2N5485_D74Z
Fairchild/ON Semiconductor

JFET N-CH 25V 10MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 10mA
  • Noise Figure: 4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고7,216
400MHz
-
15V
10mA
4dB
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLF6G27-10,112
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT975B

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 3.5A
  • Noise Figure: -
  • Current - Test: 130mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: SOT-975B
  • Supplier Device Package: CDFM2
패키지: SOT-975B
재고4,576
2.5GHz ~ 2.7GHz
19dB
28V
3.5A
-
130mA
2W
65V
SOT-975B
CDFM2
BF1201WR,115
NXP

MOSFET 2N-CH 10V 30MA SOT343R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 29dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 10V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
패키지: SC-82A, SOT-343
재고3,200
400MHz
29dB
5V
30mA
1dB
15mA
-
10V
SC-82A, SOT-343
CMPAK-4
BLF578XRS,112
Ampleon USA Inc.

RF FET LDMOS 110V 23.5DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 225MHz
  • Gain: 23.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40mA
  • Power - Output: 1400W
  • Voltage - Rated: 110V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
패키지: SOT539B
재고3,264
225MHz
23.5dB
50V
-
-
40mA
1400W
110V
SOT539B
SOT539B
SD3932
STMicroelectronics

IC TRANS RF PWR HF/VHF/UHF M244

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 123MHz
  • Gain: 26.8dB
  • Voltage - Test: 100V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 425W
  • Voltage - Rated: 250V
  • Package / Case: M244
  • Supplier Device Package: M244
패키지: M244
재고3,376
123MHz
26.8dB
100V
20A
-
250mA
425W
250V
M244
M244
BLF8G10LS-300PU
Ampleon USA Inc.

RF FET LDMOS 65V 20.5DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 760.5MHz ~ 800.5MHz
  • Gain: 20.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 65W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
패키지: SOT539B
재고3,616
760.5MHz ~ 800.5MHz
20.5dB
28V
-
-
2A
65W
65V
SOT539B
SOT539B
A2T09VD250NR1
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 920MHz
  • Gain: 22.5dB
  • Voltage - Test: 48V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 65W
  • Voltage - Rated: 105V
  • Package / Case: TO-270-6 Variant, Flat Leads
  • Supplier Device Package: TO-270WB-6A
패키지: TO-270-6 Variant, Flat Leads
재고5,056
920MHz
22.5dB
48V
-
-
1A
65W
105V
TO-270-6 Variant, Flat Leads
TO-270WB-6A
PD20010S-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 11dB
  • Voltage - Test: 13.6V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 10W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
패키지: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
재고7,360
2GHz
11dB
13.6V
5A
-
150mA
10W
40V
PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
PowerSO-10RF (Straight Lead)
MRF275G
M/A-Com Technology Solutions

FET RF 2CH 65V 500MHZ 375-04

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 500MHz
  • Gain: 11.2dB
  • Voltage - Test: 28V
  • Current Rating: 26A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 375-04
  • Supplier Device Package: 375-04, Style 2
패키지: 375-04
재고4,752
500MHz
11.2dB
28V
26A
-
100mA
150W
65V
375-04
375-04, Style 2
BLF640U
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT538A

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 700mW
  • Voltage - Rated: 65V
  • Package / Case: SOT-538A
  • Supplier Device Package: 2-CDIP
패키지: SOT-538A
재고6,592
2.11GHz ~ 2.17GHz
18.5dB
28V
-
-
100mA
700mW
65V
SOT-538A
2-CDIP
BLM7G1822S-80ABY
Ampleon USA Inc.

RF FET LDMOS 65V 31DB SOT12111

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 31dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40mA
  • Power - Output: 4W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1211-1
  • Supplier Device Package: 16-HSOP
패키지: SOT-1211-1
재고6,384
2.17GHz
31dB
28V
-
-
40mA
4W
65V
SOT-1211-1
16-HSOP
LET9060TR
STMicroelectronics

RF FET LDMOS 80V POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 60W
  • Voltage - Rated: 80V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
재고5,824
960MHz
17.2dB
28V
12A
-
300mA
60W
80V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
IXZR18N50
IXYS

RF MOSFET N-CHANNEL PLUS247-3

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 350W
  • Voltage - Rated: 500V
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고6,660
-
-
-
1mA
-
-
350W
500V
TO-247-3
PLUS247?-3
PD57002-E
STMicroelectronics

FET RF 65V 960MHZ PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 250mA
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고8,100
960MHz
15dB
28V
250mA
-
10mA
2W
65V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
SD57060-10
STMicroelectronics

FET RF 65V 945MHZ M243

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: M243
  • Supplier Device Package: M243
패키지: M243
재고7,984
945MHz
15dB
28V
7A
-
100mA
60W
65V
M243
M243
CGHV40100F
Cree/Wolfspeed

FET RF 125V 3GHZ 440193

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 3GHz
  • Gain: 11dB
  • Voltage - Test: 50V
  • Current Rating: 8.7A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 116W
  • Voltage - Rated: 125V
  • Package / Case: 440193
  • Supplier Device Package: 440193
패키지: 440193
재고14,844
0Hz ~ 3GHz
11dB
50V
8.7A
-
600mA
116W
125V
440193
440193
ICPB1020-1-110I
Microchip Technology

DC-14 GHZ 100W DISCRETE GAN HEMT

  • Transistor Type: GaN HEMT
  • Frequency: 14GHz
  • Gain: 7.4dB
  • Voltage - Test: 28 V
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: 100W
  • Voltage - Rated: 28 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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14GHz
7.4dB
28 V
8A
-
1 A
100W
28 V
Die
Die
BLC10G22XS-603AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.4dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 2.2 A
  • Power - Output: 687W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
Request a Quote
2.11GHz ~ 2.17GHz
15.4dB
30 V
2.8µA
-
2.2 A
687W
65 V
SOT-1258-4
SOT1258-4
BLC2425M10LS250Y
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1270-1

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz ~ 2.5GHz
  • Gain: 14.4dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 250W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1270-1
  • Supplier Device Package: SOT-1270-1
패키지: -
Request a Quote
2.4GHz ~ 2.5GHz
14.4dB
32 V
2.8µA
-
100 mA
250W
65 V
SOT-1270-1
SOT-1270-1
ARF469BG
Microchip Technology

RF MOSFET 150V TO264

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 45MHz
  • Gain: 16dB
  • Voltage - Test: 150 V
  • Current Rating: 30A
  • Noise Figure: -
  • Current - Test: 250 µA
  • Power - Output: 350W
  • Voltage - Rated: 500 V
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: -
Request a Quote
45MHz
16dB
150 V
30A
-
250 µA
350W
500 V
TO-264-3, TO-264AA
TO-264
BLF989SU
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT539B

  • Transistor Type: LDMOS
  • Frequency: 400MHz ~ 860MHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.3 A
  • Power - Output: 900W
  • Voltage - Rated: 108 V
  • Package / Case: SOT-539B
  • Supplier Device Package: SOT539B
패키지: -
재고162
400MHz ~ 860MHz
20dB
50 V
2.8µA
-
1.3 A
900W
108 V
SOT-539B
SOT539B