페이지 53 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  53/138
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTRA093302DCV1R2XTMA1
Infineon Technologies

IC RF FET LDMOS 330W H-49248H-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,768
-
-
-
-
-
-
-
-
-
-
BLF8G20LS-140GVQ
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: SOT1244B
패키지: SOT-1244B
재고4,288
1.81GHz ~ 1.88GHz
18.5dB
28V
-
-
900mA
35W
65V
SOT-1244B
SOT1244B
MMRF1012NR1
NXP

FET RF 120V 220MHZ

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 23.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 10W
  • Voltage - Rated: 120V
  • Package / Case: TO-270-2
  • Supplier Device Package: TO-270-2
패키지: TO-270-2
재고2,432
220MHz
23.9dB
50V
-
-
30mA
10W
120V
TO-270-2
TO-270-2
BLP7G22-10,135
NXP

TRANSISTOR DRIVER LDMOS 12HVSON

  • Transistor Type: LDMOS
  • Frequency: 700MHz ~ 2.2GHz
  • Gain: 27dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 110mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: 12-HVSON (5x6)
패키지: 12-VDFN Exposed Pad
재고7,984
700MHz ~ 2.2GHz
27dB
28V
-
-
110mA
2W
65V
12-VDFN Exposed Pad
12-HVSON (5x6)
BLF7G20L-250P,118
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 65A
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고5,280
1.81GHz ~ 1.88GHz
18dB
28V
65A
-
1.9A
70W
65V
SOT539A
SOT539A
MRF7S21210HR3
NXP

FET RF 65V 2.17GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고6,480
2.17GHz
18.5dB
28V
-
-
1.4A
63W
65V
NI-780
NI-780
MRF7S15100HR5
NXP

FET RF 65V 1.51GHZ NI780

  • Transistor Type: LDMOS
  • Frequency: 1.51GHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 23W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고3,472
1.51GHz
19.5dB
28V
-
-
600mA
23W
65V
NI-780
NI-780
BF256B_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 13MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 13mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,144
-
-
-
13mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF5S4140HR3
NXP

FET RF 65V 465MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 465MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.25A
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고5,840
465MHz
21dB
28V
-
-
1.25A
28W
65V
NI-780
NI-780
BF245C,112
NXP

JFET N-CH 30V 25MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 25mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고3,584
100MHz
-
15V
25mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
CLF1G0035-200PU
Ampleon USA Inc.

RF FET 50V 11DB SOT1228A

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,488
-
-
-
-
-
-
-
-
-
-
MMRF1016HR5
NXP

FET RF 2CH 120V 225MHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 225MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.6A
  • Power - Output: 125W
  • Voltage - Rated: 120V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고5,424
225MHz
25dB
50V
-
-
2.6A
125W
120V
SOT-979A
NI-1230-4H
BLC8G27LS-240AVU
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT12521

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.69GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 56W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1252-1
  • Supplier Device Package: SOT1252-1
패키지: SOT-1252-1
재고7,744
2.5GHz ~ 2.69GHz
14dB
28V
-
-
500mA
56W
65V
SOT-1252-1
SOT1252-1
STAC3932B
STMicroelectronics

TRANS RF PWR N-CH 580W STAC244B

  • Transistor Type: N-Channel
  • Frequency: 123MHz
  • Gain: -
  • Voltage - Test: 100V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 580W
  • Voltage - Rated: 250V
  • Package / Case: STAC244B
  • Supplier Device Package: STAC244B
패키지: STAC244B
재고5,712
123MHz
-
100V
20A
-
250mA
580W
250V
STAC244B
STAC244B
IXZR16N60
IXYS

RF MOSFET N-CHANNEL PLUS247-3

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 350W
  • Voltage - Rated: 600V
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고6,852
-
-
-
1mA
-
-
350W
600V
TO-247-3
PLUS247?-3
UF2840G
M/A-Com Technology Solutions

MOSFET 40W 28V 100-500MHZ

  • Transistor Type: N-Channel
  • Frequency: 100MHz ~ 500MHz
  • Gain: 10dB
  • Voltage - Test: 28V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,512
100MHz ~ 500MHz
10dB
28V
1mA
-
500mA
40W
65V
-
-
MRF7S24250NR3
NXP

TRANS RF LDMOS 250W 32V

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 14.7dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 256W
  • Voltage - Rated: 65V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
패키지: OM-780-2
재고3,360
2.45GHz
14.7dB
30V
-
-
100mA
256W
65V
OM-780-2
OM-780-2
hot 3SK294(TE85L,F)
Toshiba Semiconductor and Storage

FET RF 12.5V 500MHZ USQ

  • Transistor Type: N-Channel
  • Frequency: 500MHz
  • Gain: 26dB
  • Voltage - Test: 6V
  • Current Rating: 30mA
  • Noise Figure: 1.4dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 12.5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: USQ
패키지: SC-82A, SOT-343
재고360,000
500MHz
26dB
6V
30mA
1.4dB
10mA
-
12.5V
SC-82A, SOT-343
USQ
MRF9030GMR1
Freescale Semiconductor

RF MOSFET TO270

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A3T21H455W23SR6
NXP

RF MOSFET LDMOS 30V ACP1230S-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 87W
  • Voltage - Rated: 65 V
  • Package / Case: ACP-1230S-4L2S
  • Supplier Device Package: ACP-1230S-4L2S
패키지: -
Request a Quote
2.11GHz ~ 2.2GHz
15dB
30 V
10µA
-
400 mA
87W
65 V
ACP-1230S-4L2S
ACP-1230S-4L2S
ART800PEGY
Ampleon USA Inc.

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고288
-
-
-
-
-
-
-
-
-
-
CG2H40120P
MACOM Technology Solutions

RF MOSFET HEMT 28V 440206

  • Transistor Type: HEMT
  • Frequency: 2.5GHz
  • Gain: 20dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: 120W
  • Voltage - Rated: 120 V
  • Package / Case: 440206
  • Supplier Device Package: 440206
패키지: -
Request a Quote
2.5GHz
20dB
28 V
-
-
1 A
120W
120 V
440206
440206
MRF24301HS-2450
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
MRFE6S9060GNR1
NXP

RF MOSFET LDMOS 28V TO270-4

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21.1dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450 mA
  • Power - Output: 14W
  • Voltage - Rated: 66 V
  • Package / Case: TO-270BB
  • Supplier Device Package: TO-270 WB-4 Gull
패키지: -
Request a Quote
880MHz
21.1dB
28 V
-
-
450 mA
14W
66 V
TO-270BB
TO-270 WB-4 Gull
BLP15H9S30Z
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT1482-1

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 22dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 10 mA
  • Power - Output: 30W
  • Voltage - Rated: 106 V
  • Package / Case: SOT-1482-1
  • Supplier Device Package: SOT-1482-1
패키지: -
재고54
1.5GHz
22dB
50 V
1.4µA
-
10 mA
30W
106 V
SOT-1482-1
SOT-1482-1
A3G26H502W17SR3
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 13.1dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 370 mA
  • Power - Output: 80W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780-4S2S
  • Supplier Device Package: NI-780-4S2S
패키지: -
Request a Quote
2.496GHz ~ 2.69GHz
13.1dB
48 V
-
-
370 mA
80W
125 V
NI-780-4S2S
NI-780-4S2S
BLP9H10S-500AWTZ
Ampleon USA Inc.

RF MOSFET LDMOS 48V OMP780

  • Transistor Type: LDMOS
  • Frequency: 600MHz ~ 960MHz
  • Gain: 18.3dB
  • Voltage - Test: 48 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.1 A
  • Power - Output: 620W
  • Voltage - Rated: 105 V
  • Package / Case: OMP-780-6F-1
  • Supplier Device Package: OMP-780-6F-1
패키지: -
Request a Quote
600MHz ~ 960MHz
18.3dB
48 V
1.4µA
-
1.1 A
620W
105 V
OMP-780-6F-1
OMP-780-6F-1
MMRF1317H-1030
NXP

RF MOSFET LDMOS 50V NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 18.2dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 1500W
  • Voltage - Rated: 105 V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: -
Request a Quote
1.03GHz ~ 1.09GHz
18.2dB
50 V
10µA
-
100 mA
1500W
105 V
SOT-979A
NI-1230-4H