페이지 56 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  56/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTVA093002TCV1XWSA1
Infineon Technologies

IC RF FET LDMOS H-49248H-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,784
-
-
-
-
-
-
-
-
-
-
PTFA212401E V4 R250
Infineon Technologies

FET RF 65V 2.14GHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
패키지: 2-Flatpack, Fin Leads
재고7,424
2.14GHz
15.8dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads
H-36260-2
PTFA211801F V4
Infineon Technologies

IC FET RF LDMOS 180W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고3,456
2.14GHz
15.5dB
28V
10µA
-
1.2A
35W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
VMMK-1225-TR1G
Broadcom Limited

FET RF 5V 12GHZ 0402

  • Transistor Type: E-pHEMT
  • Frequency: 12GHz
  • Gain: 11dB
  • Voltage - Test: 2V
  • Current Rating: 50mA
  • Noise Figure: 1dB
  • Current - Test: 20mA
  • Power - Output: 8dBm
  • Voltage - Rated: 5V
  • Package / Case: 0402 (1005 Metric)
  • Supplier Device Package: 0402
패키지: 0402 (1005 Metric)
재고3,600
12GHz
11dB
2V
50mA
1dB
20mA
8dBm
5V
0402 (1005 Metric)
0402
hot NE3509M04-T2-A
CEL

FET RF 4V 2GHZ SOT-343

  • Transistor Type: HFET
  • Frequency: 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 2V
  • Current Rating: 60mA
  • Noise Figure: 0.4dB
  • Current - Test: 10mA
  • Power - Output: 11dBm
  • Voltage - Rated: 4V
  • Package / Case: SOT-343F
  • Supplier Device Package: M04
패키지: SOT-343F
재고546,984
2GHz
17.5dB
2V
60mA
0.4dB
10mA
11dBm
4V
SOT-343F
M04
hot NE5531079A-T1-A
CEL

FET RF 30V 460MHZ 79A

  • Transistor Type: LDMOS
  • Frequency: 460MHz
  • Gain: -
  • Voltage - Test: 7.5V
  • Current Rating: 3A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 40dBm
  • Voltage - Rated: 30V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
패키지: 4-SMD, Flat Leads
재고102,780
460MHz
-
7.5V
3A
-
200mA
40dBm
30V
4-SMD, Flat Leads
79A
ON5223,118
NXP

MOSFET RF SOT426 D2PAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: SOT-426
패키지: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
재고6,640
-
-
-
-
-
-
-
-
TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
SOT-426
hot MRF8S9260HR3
NXP

FET RF 70V 960MHZ NI-880H

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.7A
  • Power - Output: 75W
  • Voltage - Rated: 70V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고5,808
960MHz
18.6dB
28V
-
-
1.7A
75W
70V
NI-880
NI-880
MRF6VP41KHSR6
NXP

FET RF 2CH 110V 450MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 450MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고4,272
450MHz
20dB
50V
-
-
150mA
1000W
110V
NI-1230S
NI-1230S
MRF6P9220HR3
NXP

FET RF 68V 880MHZ NI-860C3

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 47W
  • Voltage - Rated: 68V
  • Package / Case: NI-860C3
  • Supplier Device Package: NI-860C3
패키지: NI-860C3
재고3,264
880MHz
20dB
28V
-
-
1.6A
47W
68V
NI-860C3
NI-860C3
hot MRF5S9101NR1
NXP

FET RF 68V 960MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 17.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 100W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고6,544
960MHz
17.5dB
26V
-
-
700mA
100W
68V
TO-270AB
TO-270 WB-4
BLL1214-35,112
Ampleon USA Inc.

RF FET LDMOS 75V 13DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 13dB
  • Voltage - Test: 36V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 35W
  • Voltage - Rated: 75V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
패키지: SOT467C
재고6,304
1.2GHz ~ 1.4GHz
13dB
36V
-
-
50mA
35W
75V
SOT467C
SOT467C
BLA1011-2,112
Ampleon USA Inc.

RF FET LDMOS 75V 16DB SOT538A

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 16dB
  • Voltage - Test: 36V
  • Current Rating: 2.2A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 2W
  • Voltage - Rated: 75V
  • Package / Case: SOT-538A
  • Supplier Device Package: 2-CDIP
패키지: SOT-538A
재고7,776
1.03GHz ~ 1.09GHz
16dB
36V
2.2A
-
50mA
2W
75V
SOT-538A
2-CDIP
PTVA047002EVV1R0XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,712
-
-
-
-
-
-
-
-
-
-
PTFA180701EV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 70W H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 1.84GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36265-2
패키지: 2-Flatpack, Fin Leads
재고2,752
1.84GHz
16.5dB
28V
10µA
-
550mA
60W
65V
2-Flatpack, Fin Leads
H-36265-2
BF2040WH6814XTSA1
Infineon Technologies

MOSFET N-CH 8V 40MA SOT343

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 1.6dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고2,624
800MHz
23dB
5V
40mA
1.6dB
15mA
-
8V
SC-82A, SOT-343
PG-SOT343-4
MMRF1013HSR5
NXP

FET RF 2CH 65V 2.9GHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.9GHz
  • Gain: 13.3dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 320W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
패키지: NI-1230-4S
재고5,200
2.9GHz
13.3dB
30V
-
-
100mA
320W
65V
NI-1230-4S
NI-1230-4S
BLF7G27LS-150P,118
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 37A
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: CDFM4
패키지: SOT539B
재고4,608
2.5GHz ~ 2.7GHz
16.5dB
28V
37A
-
1.2A
30W
65V
SOT539B
CDFM4
hot MRF8P20161HSR3
NXP

FET RF 2CH 65V 1.92GHZ NI-780S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.92GHz
  • Gain: 16.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 37W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고7,360
1.92GHz
16.4dB
28V
-
-
550mA
37W
65V
NI-780S-4
NI-780S-4
LET9045TR
STMicroelectronics

RF MOSFET LDMOS 28V POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 45W
  • Voltage - Rated: 80V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
재고4,512
960MHz
18.5dB
28V
1µA
-
300mA
45W
80V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
MRF175LU
M/A-Com Technology Solutions

FET RF 65V 400MHZ 333-04

  • Transistor Type: N-Channel
  • Frequency: 400MHz
  • Gain: 10dB
  • Voltage - Test: 28V
  • Current Rating: 13A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: 333-04
  • Supplier Device Package: 333-04, Style 2
패키지: 333-04
재고6,144
400MHz
10dB
28V
13A
-
100mA
100W
65V
333-04
333-04, Style 2
CLF1G0035S-100PU
Ampleon USA Inc.

RF FET HEMT 150V 14DB SOT1228B

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 14dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 100W
  • Voltage - Rated: 150V
  • Package / Case: SOT-1228B
  • Supplier Device Package: SOT-1228B
패키지: SOT-1228B
재고3,872
3GHz
14dB
50V
-
-
100mA
100W
150V
SOT-1228B
SOT-1228B
275-101N30A-00
IXYS

RF MOSFET N-CHANNEL DE275

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 550W
  • Voltage - Rated: 100V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE275
패키지: 6-SMD, Flat Lead Exposed Pad
재고7,584
-
-
-
25µA
-
-
550W
100V
6-SMD, Flat Lead Exposed Pad
DE275
CGH40006S
Cree/Wolfspeed

FET RF 84V 6GHZ 6QFN

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 12dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 8W
  • Voltage - Rated: 84V
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-QFN-EP (3x3)
패키지: 6-VDFN Exposed Pad
재고14,580
0Hz ~ 6GHz
12dB
28V
-
-
100mA
8W
84V
6-VDFN Exposed Pad
6-QFN-EP (3x3)
PXAC261212FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 15dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 280 mA
  • Power - Output: 28W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: -
Request a Quote
2.69GHz
15dB
28 V
-
-
280 mA
28W
65 V
H-37248-4
H-37248-4
TBB1004DMTL-H
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC9H10XS-350AZ
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT1273-1

  • Transistor Type: LDMOS
  • Frequency: 617MHz ~ 960MHz
  • Gain: 19.5dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 350W
  • Voltage - Rated: 105 V
  • Package / Case: SOT-1273-1
  • Supplier Device Package: SOT1273-1
패키지: -
재고36
617MHz ~ 960MHz
19.5dB
50 V
1.4µA
-
400 mA
350W
105 V
SOT-1273-1
SOT1273-1
PTVA120121M-V1-R1K
MACOM Technology Solutions

RF MOSFET LDMOS 48V 10SON

  • Transistor Type: LDMOS
  • Frequency: 500MHz ~ 1.4GHz
  • Gain: 21.64dB
  • Voltage - Test: 48 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 15.62W
  • Voltage - Rated: 105 V
  • Package / Case: 10-LDFN Exposed Pad
  • Supplier Device Package: PG-SON-10
패키지: -
Request a Quote
500MHz ~ 1.4GHz
21.64dB
48 V
1µA
-
50 mA
15.62W
105 V
10-LDFN Exposed Pad
PG-SON-10