페이지 61 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  61/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA210701EV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 70W H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16.5dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36265-2
패키지: 2-Flatpack, Fin Leads
재고2,576
2.14GHz
16.5dB
30V
10µA
-
550mA
18W
65V
2-Flatpack, Fin Leads
H-36265-2
PTFA190451FV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 45W H-37265-2

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 11W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37265-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고6,464
1.96GHz
17.5dB
28V
10µA
-
450mA
11W
65V
2-Flatpack, Fin Leads, Flanged
H-37265-2
PTFA181001FV4XWSA1
Infineon Technologies

IC FET RF LDMOS 100W H-37248-2

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고5,104
1.88GHz
16.5dB
28V
1µA
-
750mA
100W
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
BLF6G05LS-200RN,11
Ampleon USA Inc.

RF FET LDMOS 65V 24DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 460MHz ~ 470MHz
  • Gain: 24dB
  • Voltage - Test: 28V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: LDMOST
패키지: SOT-502B
재고7,632
460MHz ~ 470MHz
24dB
28V
49A
-
1.4A
40W
65V
SOT-502B
LDMOST
MRF8S18260HR6
NXP

FET RF 2CH 65V 1.81GHZ NI1230-8

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.81GHz
  • Gain: 17.9dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 74W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1110A
  • Supplier Device Package: NI1230-8
패키지: SOT-1110A
재고4,864
1.81GHz
17.9dB
30V
-
-
1.6A
74W
65V
SOT-1110A
NI1230-8
ON5407,135
NXP

MOSFET RF SOT223 SC-73

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고2,768
-
-
-
-
-
-
-
-
TO-261-4, TO-261AA
SOT-223
hot MRF8S21200HR6
NXP

FET RF 2CH 65V 2.14GHZ NI-1230H

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.14GHz
  • Gain: 18.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 48W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고3,632
2.14GHz
18.1dB
28V
-
-
1.4A
48W
65V
NI-1230
NI-1230
MRF6V12500HR3
NXP

FET RF 110V 1.03GHZ NI-780H

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 19.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 500W
  • Voltage - Rated: 110V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고2,048
1.03GHz
19.7dB
50V
-
-
200mA
500W
110V
NI-780
NI-780
BLD6G22LS-50,112
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT1130B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.14GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 10.2A
  • Noise Figure: -
  • Current - Test: 170mA
  • Power - Output: 8W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1130B
  • Supplier Device Package: CDFM4
패키지: SOT-1130B
재고6,112
2.14GHz
14dB
28V
10.2A
-
170mA
8W
65V
SOT-1130B
CDFM4
BLF6G10LS-160,118
Ampleon USA Inc.

RF FET LDMOS SOT502B

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고6,016
-
-
-
-
-
-
-
-
SOT-502B
SOT502B
PD57070S
STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14.7dB
  • Voltage - Test: 28V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고4,288
945MHz
14.7dB
28V
7A
-
250mA
70W
65V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
MRF372R3
NXP

FET RF 68V 863MHZ NI-860C3

  • Transistor Type: LDMOS
  • Frequency: 857MHz ~ 863MHz
  • Gain: 17dB
  • Voltage - Test: 32V
  • Current Rating: 17A
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 180W
  • Voltage - Rated: 68V
  • Package / Case: NI-860C3
  • Supplier Device Package: NI-860C3
패키지: NI-860C3
재고3,792
857MHz ~ 863MHz
17dB
32V
17A
-
800mA
180W
68V
NI-860C3
NI-860C3
MRF6S9125MBR1
NXP

FET RF 68V 880MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 68V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272-4
재고2,816
880MHz
20.2dB
28V
-
-
950mA
27W
68V
TO-272-4
TO-272 WB-4
hot MRF6S21050LSR3
NXP

FET RF 68V 2.16GHZ NI-400S

  • Transistor Type: LDMOS
  • Frequency: 2.16GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 11.5W
  • Voltage - Rated: 68V
  • Package / Case: NI-400S
  • Supplier Device Package: NI-400S
패키지: NI-400S
재고10,116
2.16GHz
16dB
28V
-
-
450mA
11.5W
68V
NI-400S
NI-400S
BLA8G1011LS-300U
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.06GHz
  • Gain: 16.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 300W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고3,584
1.06GHz
16.5dB
32V
-
-
150mA
300W
65V
SOT-502B
SOT502B
BLF8G10L-160,118
Ampleon USA Inc.

RF FET LDMOS 65V 19.7DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 19.7dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고6,096
920MHz ~ 960MHz
19.7dB
30V
-
-
1.1A
35W
65V
SOT-502A
LDMOST
hot MRF7P20040HSR3
NXP

FET RF 2CH 65V 2.03GHZ NI780HS-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.03GHz
  • Gain: 18.2dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고7,932
2.03GHz
18.2dB
32V
-
-
150mA
10W
65V
NI-780S-4
NI-780S-4
BLF642,112
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 19dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 35W
  • Voltage - Rated: 65V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
패키지: SOT467C
재고6,180
1.3GHz
19dB
32V
-
-
200mA
35W
65V
SOT467C
SOT467C
MRF6VP21KHR5
NXP

FET RF 2CH 110V 225MHZ NI-1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 225MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고5,504
225MHz
24dB
50V
-
-
150mA
1000W
110V
NI-1230
NI-1230
BLC8G27LS-240AVJ
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT12521

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.69GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 56W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1252-1
  • Supplier Device Package: SOT1252-1
패키지: SOT-1252-1
재고7,936
2.5GHz ~ 2.69GHz
14dB
28V
-
-
500mA
56W
65V
SOT-1252-1
SOT1252-1
CGHV27200F
Cree/Wolfspeed

FET RF 50V 2.7GHZ 440162

  • Transistor Type: HEMT
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 15dB ~ 16dB
  • Voltage - Test: 50V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 200W
  • Voltage - Rated: 50V
  • Package / Case: 440162
  • Supplier Device Package: 440162
패키지: 440162
재고7,696
2.5GHz ~ 2.7GHz
15dB ~ 16dB
50V
12A
-
1A
200W
50V
440162
440162
BCF240T
BeRex Inc

RF MOSFET MESFET 8V DIE

  • Transistor Type: MESFET
  • Frequency: 26.5GHz
  • Gain: 7.7dB
  • Voltage - Test: 8 V
  • Current Rating: 960mA
  • Noise Figure: -
  • Current - Test: 480 mA
  • Power - Output: 30.4dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
26.5GHz
7.7dB
8 V
960mA
-
480 mA
30.4dBm
12 V
Die
Die
PTRA093818NF-V1-R5
MACOM Technology Solutions

RF MOSFET LDMOS 48V 6HBSOF

  • Transistor Type: LDMOS
  • Frequency: 925MHz ~ 960MHz
  • Gain: 18dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 250W
  • Voltage - Rated: 105 V
  • Package / Case: HBSOF-6-2
  • Supplier Device Package: PG-HBSOF-6-2
패키지: -
Request a Quote
925MHz ~ 960MHz
18dB
48 V
10µA
-
200 mA
250W
105 V
HBSOF-6-2
PG-HBSOF-6-2
GTVA212701FA-V2-R2
MACOM Technology Solutions

RF MOSFET HEMT 48V H-87265J-2

  • Transistor Type: HEMT
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 19dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 320 mA
  • Power - Output: 270W
  • Voltage - Rated: 125 V
  • Package / Case: H-87265J-2
  • Supplier Device Package: H-87265J-2
패키지: -
Request a Quote
2.11GHz ~ 2.2GHz
19dB
48 V
-
-
320 mA
270W
125 V
H-87265J-2
H-87265J-2
MRF6VP121KHR5-FR
Freescale Semiconductor

RF MOSFET LDMOS 50V NI1230

  • Transistor Type: LDMOS
  • Frequency: 1.215GHz
  • Gain: 21.4dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 1000W
  • Voltage - Rated: 110 V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: -
Request a Quote
1.215GHz
21.4dB
50 V
10µA
-
150 mA
1000W
110 V
NI-1230
NI-1230
AFT26HW050GSR3-NXP
NXP

RF MOSFET

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 14.2dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 9W
  • Voltage - Rated: 65 V
  • Package / Case: NI-780S-4L4L-8
  • Supplier Device Package: NI-780S-4L4L-8
패키지: -
Request a Quote
2.496GHz ~ 2.69GHz
14.2dB
28 V
1µA
-
100 mA
9W
65 V
NI-780S-4L4L-8
NI-780S-4L4L-8
MRFX600HSR5
NXP

RF MOSFET LDMOS 65V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 400MHz
  • Gain: 26.4dB
  • Voltage - Test: 65 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 600W
  • Voltage - Rated: 179 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
패키지: -
재고297
1.8MHz ~ 400MHz
26.4dB
65 V
10µA
-
100 mA
600W
179 V
NI-780S-4L
NI-780S-4L
GTVA262701FA-V2-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-87265J-2

  • Transistor Type: HEMT
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 17dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 320 mA
  • Power - Output: 270W
  • Voltage - Rated: 125 V
  • Package / Case: H-87265J-2
  • Supplier Device Package: H-87265J-2
패키지: -
Request a Quote
2.62GHz ~ 2.69GHz
17dB
48 V
-
-
320 mA
270W
125 V
H-87265J-2
H-87265J-2