페이지 62 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  62/138
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTVA093002TCV1R250XTMA1
Infineon Technologies

IC RF FET LDMOS H-49248H-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,544
-
-
-
-
-
-
-
-
-
-
BLM7G22S-60PBGY
Ampleon USA Inc.

RF FET LDMOS 65V 31.5DB SOT12121

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.14GHz
  • Gain: 31.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 75mA
  • Power - Output: 1.6W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1212-1
  • Supplier Device Package: 16-HSOP
패키지: SOT-1212-1
재고2,960
2.14GHz
31.5dB
28V
-
-
75mA
1.6W
65V
SOT-1212-1
16-HSOP
NE3521M04-A
CEL

IC HJ-FET N-CH GAAS 4SMINI

  • Transistor Type: N-Channel
  • Frequency: 20GHz
  • Gain: 10.5dB
  • Voltage - Test: 2V
  • Current Rating: 15mA
  • Noise Figure: 0.85dB
  • Current - Test: 6mA
  • Power - Output: -
  • Voltage - Rated: 3V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: -
패키지: 4-SMD, Flat Leads
재고4,416
20GHz
10.5dB
2V
15mA
0.85dB
6mA
-
3V
4-SMD, Flat Leads
-
BLF7G27LS-90P,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 720mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
패키지: SOT-1121B
재고3,776
2.5GHz ~ 2.7GHz
18.5dB
28V
18A
-
720mA
16W
65V
SOT-1121B
CDFM4
ON5274,115
NXP

MOSFET RF SOT223 SC-73

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고3,216
-
-
-
-
-
-
-
-
TO-261-4, TO-261AA
SOT-223
ON5154,127
NXP

MOSFET RF TO220AB TO220AB

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고6,368
-
-
-
-
-
-
-
-
TO-220-3
TO-220AB
MRF9030LSR5
NXP

FET RF 68V 945MHZ NI-360S

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 19dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 68V
  • Package / Case: NI-360S
  • Supplier Device Package: NI-360S
패키지: NI-360S
재고7,216
945MHz
19dB
26V
-
-
250mA
30W
68V
NI-360S
NI-360S
2N5486RLRPG
ON Semiconductor

JFET N-CH 25V 30MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 30mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고7,792
-
-
-
30mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF6S9125MR1
NXP

FET RF 68V 880MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270-4
재고4,816
880MHz
20.2dB
28V
-
-
950mA
27W
68V
TO-270-4
TO-270 WB-4
BF1215,115
NXP

FET RF 6V 400MHZ 6TSSOP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 30dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 1.5dB
  • Current - Test: 19mA
  • Power - Output: -
  • Voltage - Rated: 6V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고7,584
400MHz
30dB
5V
30mA
1.5dB
19mA
-
6V
6-TSSOP, SC-88, SOT-363
6-TSSOP
BF1218,115
NXP

FET RF 6V 400MHZ 6TSSOP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 32dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 19mA
  • Power - Output: -
  • Voltage - Rated: 6V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고2,656
400MHz
32dB
5V
30mA
0.9dB
19mA
-
6V
6-TSSOP, SC-88, SOT-363
6-TSSOP
PTFA092201EV4R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 30V H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.85A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36260-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고7,264
920MHz ~ 960MHz
18.5dB
30V
10µA
-
1.85A
220W
65V
2-Flatpack, Fin Leads, Flanged
H-36260-2
MRF6VP121KHSR5
NXP

FET RF 2CH 110V 1.03GHZ NI1230H

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고4,736
1.03GHz
20dB
50V
-
-
150mA
1000W
110V
NI-1230S
NI-1230S
MRF6V14300HSR5
NXP

FET RF 100V 1.4GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 1.4GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 330W
  • Voltage - Rated: 100V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고6,656
1.4GHz
18dB
50V
-
-
150mA
330W
100V
NI-780S
NI-780S
BLS9G2735LS-50U
Ampleon USA Inc.

BLS9G2735LS-50/SOT1135/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,048
-
-
-
-
-
-
-
-
-
-
BLF2425M7L140,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 140W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고7,680
2.45GHz
18.5dB
28V
-
-
1.3A
140W
65V
SOT-502A
LDMOST
SD2931-12MR
STMicroelectronics

IC TRANS RF/VHF DMOS M174MR

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 15dB
  • Voltage - Test: 50V
  • Current Rating: 20A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 150W
  • Voltage - Rated: 125V
  • Package / Case: M174MR
  • Supplier Device Package: M174MR
패키지: M174MR
재고7,600
175MHz
15dB
50V
20A
-
250mA
150W
125V
M174MR
M174MR
BLC9G20LS-120VZ
Ampleon USA Inc.

RF FET LDMOS 65V 19.2DB SOT12753

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 120W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-3
  • Supplier Device Package: -
패키지: SOT1275-3
재고6,600
1.81GHz ~ 1.88GHz
19.2dB
28V
-
-
700mA
120W
65V
SOT1275-3
-
ARF460AG
Microsemi Corporation

FET RF N-CH 500V 14A TO247

  • Transistor Type: N-Channel
  • Frequency: 40.68MHz
  • Gain: 15dB
  • Voltage - Test: 125V
  • Current Rating: 14A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: -
  • Voltage - Rated: 500V
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247CS
패키지: TO-247-3
재고6,468
40.68MHz
15dB
125V
14A
-
50mA
-
500V
TO-247-3
TO-247CS
SD2943W
STMicroelectronics

TRANS RF N-CH HF/VHF/UHF M177

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 350W
  • Voltage - Rated: 130V
  • Package / Case: M177
  • Supplier Device Package: M177
패키지: M177
재고7,520
30MHz
25dB
50V
40A
-
250mA
350W
130V
M177
M177
BLC8G27LS-210PVY
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT12513

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.6GHz ~ 2.7GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.73A
  • Power - Output: 65W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1251-3
  • Supplier Device Package: 8-DFM
패키지: SOT-1251-3
재고6,384
2.6GHz ~ 2.7GHz
17dB
28V
-
-
1.73A
65W
65V
SOT-1251-3
8-DFM
A3G26H350W17SR3
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 13.3dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250 mA
  • Power - Output: 59W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780S-4S2S
  • Supplier Device Package: NI-780S-4S2S
패키지: -
Request a Quote
2.496GHz ~ 2.69GHz
13.3dB
48 V
-
-
250 mA
59W
125 V
NI-780S-4S2S
NI-780S-4S2S
C4H2327N110AZ
Ampleon USA Inc.

RF MOSFET 6DFN

  • Transistor Type: -
  • Frequency: 2.3GHz ~ 2.69GHz
  • Gain: 15dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 50 V
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (7x6.5)
패키지: -
재고555
2.3GHz ~ 2.69GHz
15dB
-
-
-
-
-
50 V
6-VDFN Exposed Pad
6-DFN (7x6.5)
RF5L05500CB4
STMicroelectronics

RF MOSFET LDMOS LBB

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 16dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 2000W
  • Voltage - Rated: 50 V
  • Package / Case: LBB
  • Supplier Device Package: LBB
패키지: -
Request a Quote
1.5GHz
16dB
-
-
-
-
2000W
50 V
LBB
LBB
BLF6G10LS-200RN
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT502B

  • Transistor Type: LDMOS
  • Frequency: 700MHz ~ 1GHz
  • Gain: 20dB
  • Voltage - Test: 28 V
  • Current Rating: 4.2µA
  • Noise Figure: -
  • Current - Test: 1.4 A
  • Power - Output: 200W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: -
Request a Quote
700MHz ~ 1GHz
20dB
28 V
4.2µA
-
1.4 A
200W
65 V
SOT-502B
SOT502B
AFV10700HSR5
NXP

RF MOSFET LDMOS 50V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 19.2dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 770W
  • Voltage - Rated: 105 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
패키지: -
Request a Quote
1.03GHz ~ 1.09GHz
19.2dB
50 V
10µA
-
100 mA
770W
105 V
NI-780S-4L
NI-780S-4L
GTVA107001FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 50V H-37248-2

  • Transistor Type: HEMT
  • Frequency: 1.4GHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 700W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248-2
  • Supplier Device Package: H-37248-2
패키지: -
Request a Quote
1.4GHz
20dB
50 V
-
-
100 mA
700W
125 V
H-37248-2
H-37248-2
PTFA072401FL-V5-R0
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-34288-2

  • Transistor Type: LDMOS
  • Frequency: 725MHz ~ 770MHz
  • Gain: 19dB
  • Voltage - Test: 30 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.9 A
  • Power - Output: 240W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-34288-2
패키지: -
Request a Quote
725MHz ~ 770MHz
19dB
30 V
10µA
-
1.9 A
240W
65 V
2-Flatpack, Fin Leads
H-34288-2