페이지 84 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  84/138
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설명
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재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFB082817FHV1R250XTMA1
Infineon Technologies

IC FET RF LDMOS H-34288

  • Transistor Type: LDMOS
  • Frequency: 821MHz
  • Gain: 19.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.15A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-34288-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고3,328
821MHz
19.3dB
28V
-
-
2.15A
60W
65V
2-Flatpack, Fin Leads, Flanged
H-34288-2
PTFA072401ELV4R250XTMA1
Infineon Technologies

FET RF LDMOS 240W H33288-2

  • Transistor Type: LDMOS
  • Frequency: 765MHz
  • Gain: 19dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-33288-2
패키지: 2-Flatpack, Fin Leads
재고6,160
765MHz
19dB
30V
-
-
1.8A
220W
65V
2-Flatpack, Fin Leads
H-33288-2
PTFA180701FV4FWSA1
Infineon Technologies

IC FET RF LDMOS 70W H-37265-2

  • Transistor Type: LDMOS
  • Frequency: 1.84GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37265-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고3,568
1.84GHz
16.5dB
28V
10µA
-
550mA
60W
65V
2-Flatpack, Fin Leads, Flanged
H-37265-2
MRF8P23080HSR5
NXP

FET RF 2CH 65V 2.3GHZ NI780S-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz
  • Gain: 14.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 280mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고2,816
2.3GHz
14.6dB
28V
-
-
280mA
16W
65V
NI-780S-4
NI-780S-4
ON5240,118
NXP

MOSFET RF SOT426 D2PAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: SOT-426
패키지: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
재고5,712
-
-
-
-
-
-
-
-
TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
SOT-426
BLA1011S-200R,112
Ampleon USA Inc.

RF FET LDMOS 75V 13DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 13dB
  • Voltage - Test: 36V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 200W
  • Voltage - Rated: 75V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고7,952
1.03GHz ~ 1.09GHz
13dB
36V
-
-
150mA
200W
75V
SOT-502B
SOT502B
BLF6G10LS-200R,112
Ampleon USA Inc.

RF FET LDMOS 65V SOT502B

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: 28V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고5,072
-
-
28V
49A
-
1.4A
40W
65V
SOT-502B
SOT502B
BLF6G20-230P
NXP

IC BASESTATION FINAL SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.8GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 5µA
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고7,360
1.8GHz
16.5dB
28V
5µA
-
2A
50W
65V
SOT-502A
LDMOST
MRF7S38010HSR3
NXP

FET RF 65V 3.6GHZ NI-400S

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 160mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: NI-400S-240
  • Supplier Device Package: NI-400S-240
패키지: NI-400S-240
재고7,248
3.4GHz ~ 3.6GHz
15dB
30V
-
-
160mA
2W
65V
NI-400S-240
NI-400S-240
hot MRF6S23140HR3
NXP

FET RF 68V 2.39GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 15.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 28W
  • Voltage - Rated: 68V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고5,648
2.39GHz
15.2dB
28V
-
-
1.3A
28W
68V
NI-880
NI-880
BLF189XRBU
Ampleon USA Inc.

BLF189XRB/SOT539/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,872
-
-
-
-
-
-
-
-
-
-
MMRF1308HR5
NXP

FET RF 2CH 133V 230MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 133V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고2,336
230MHz
25dB
50V
-
-
100mA
600W
133V
SOT-979A
NI-1230-4H
AFT26H200W03SR6
NXP

FET RF 2CH 65V 2.5GHZ NI1230S-4

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz
  • Gain: 14.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230S-4
  • Supplier Device Package: NI-1230S-4
패키지: NI-1230S-4
재고6,448
2.5GHz
14.1dB
28V
-
-
500mA
45W
65V
NI-1230S-4
NI-1230S-4
A2T21H100-25SR3
NXP

IC RF LDMOS TRANS CELL

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,168
-
-
-
-
-
-
-
-
-
-
BLM7G1822S-40PBGY
Ampleon USA Inc.

RF FET LDMOS 65V 31.5DB SOT12121

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.81GHz ~ 2.17GHz
  • Gain: 31.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40mA
  • Power - Output: 4W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1212-1
  • Supplier Device Package: 16-HSOP
패키지: SOT-1212-1
재고6,600
1.81GHz ~ 2.17GHz
31.5dB
28V
-
-
40mA
4W
65V
SOT-1212-1
16-HSOP
BLF8G27LS-140V,112
Ampleon USA Inc.

RF FET LDMOS 65V 17.4DB SOT1120B

  • Transistor Type: LDMOS
  • Frequency: 2.63GHz ~ 2.69GHz
  • Gain: 17.4dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1120B
  • Supplier Device Package: CDFM6
패키지: SOT-1120B
재고7,152
2.63GHz ~ 2.69GHz
17.4dB
32V
-
-
1.3A
45W
65V
SOT-1120B
CDFM6
SD2933W
STMicroelectronics

IC TRANS RF HF/VHF/UHF

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 23.5dB
  • Voltage - Test: 50V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 300W
  • Voltage - Rated: 125V
  • Package / Case: M177
  • Supplier Device Package: M177
패키지: M177
재고7,504
30MHz
23.5dB
50V
40A
-
250mA
300W
125V
M177
M177
NPTB00004A
M/A-Com Technology Solutions

HEMT N-CH 28V 5W DC-6GHZ 8SOIC

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 14.8dB
  • Voltage - Test: 28V
  • Current Rating: 1.4A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 4W
  • Voltage - Rated: 100V
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고12,078
0Hz ~ 6GHz
14.8dB
28V
1.4A
-
50mA
4W
100V
8-SOIC (0.154", 3.90mm Width)
8-SOIC
PTFC261402FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 18dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 28W
  • Voltage - Rated: 65 V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
2.69GHz
18dB
28 V
-
-
900 mA
28W
65 V
-
-
PXAE213708NB-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 29V 8HB2SOF

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.18GHz
  • Gain: 16dB
  • Voltage - Test: 29 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750 mA
  • Power - Output: 54W
  • Voltage - Rated: 65 V
  • Package / Case: PG-HB2SOF-8-1
  • Supplier Device Package: PG-HB2SOF-8-1
패키지: -
Request a Quote
2.11GHz ~ 2.18GHz
16dB
29 V
10µA
-
750 mA
54W
65 V
PG-HB2SOF-8-1
PG-HB2SOF-8-1
NE3510M04-07-T2-A
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTFC270051M-V2-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V 10SON

  • Transistor Type: LDMOS
  • Frequency: 900MHz ~ 2.7GHz
  • Gain: 19.5dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 65 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: 10-LDFN Exposed Pad
  • Supplier Device Package: PG-SON-10
패키지: -
Request a Quote
900MHz ~ 2.7GHz
19.5dB
28 V
1µA
-
65 mA
5W
65 V
10-LDFN Exposed Pad
PG-SON-10
BLP15H9S100Z
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT1482-1

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 19dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 30 mA
  • Power - Output: 100W
  • Voltage - Rated: 106 V
  • Package / Case: SOT-1482-1
  • Supplier Device Package: SOT-1482-1
패키지: -
Request a Quote
1.5GHz
19dB
50 V
1.4µA
-
30 mA
100W
106 V
SOT-1482-1
SOT-1482-1
GTVA355001EC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 50V H-36248-2

  • Transistor Type: HEMT
  • Frequency: 2.9GHz ~ 3.5GHz
  • Gain: 13.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 500W
  • Voltage - Rated: 125 V
  • Package / Case: H-36248-2
  • Supplier Device Package: H-36248-2
패키지: -
재고144
2.9GHz ~ 3.5GHz
13.5dB
50 V
-
-
200 mA
500W
125 V
H-36248-2
H-36248-2
BLC10G22XS-551AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 2.1GHz ~ 2.2GHz
  • Gain: 16dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 550W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
재고60
2.1GHz ~ 2.2GHz
16dB
32 V
2.8µA
-
900 mA
550W
65 V
SOT-1258-4
SOT1258-4
PTFA080551E-V4-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 55W
  • Voltage - Rated: 65 V
  • Package / Case: H-36265-2
  • Supplier Device Package: H-36265-2
패키지: -
Request a Quote
960MHz
18.5dB
28 V
10µA
-
600 mA
55W
65 V
H-36265-2
H-36265-2
RF5L05950CF2
STMicroelectronics

RF MOSFET LDMOS C2

  • Transistor Type: LDMOS
  • Frequency: 1.5GHz
  • Gain: 20dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 2000W
  • Voltage - Rated: 50 V
  • Package / Case: C2
  • Supplier Device Package: C2
패키지: -
Request a Quote
1.5GHz
20dB
-
-
-
-
2000W
50 V
C2
C2
NE5550779A-T1A-A
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • Transistor Type: LDMOS
  • Frequency: 900MHz
  • Gain: 22dB
  • Voltage - Test: 9 V
  • Current Rating: 2.1A
  • Noise Figure: -
  • Current - Test: 140 mA
  • Power - Output: 38.5dBm
  • Voltage - Rated: 30 V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
패키지: -
Request a Quote
900MHz
22dB
9 V
2.1A
-
140 mA
38.5dBm
30 V
4-SMD, Flat Leads
79A