페이지 86 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  86/138
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패키지
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Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA081501E1V4T500XWSA1
Infineon Technologies

IC RF FET LDMOS H-36248-2

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,520
-
-
-
-
-
-
-
-
-
-
PTFA092211FLV4XWSA1
Infineon Technologies

IC FET RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 175mA
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-34288-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고2,272
920MHz ~ 960MHz
18dB
30V
-
-
175mA
50W
65V
2-Flatpack, Fin Leads, Flanged
H-34288-2
BF1009SE6327HTSA1
Infineon Technologies

MOSFET N-CH 12V 25MA SOT-143

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 22dB
  • Voltage - Test: 9V
  • Current Rating: 25mA
  • Noise Figure: 1.4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 12V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
패키지: TO-253-4, TO-253AA
재고7,872
800MHz
22dB
9V
25mA
1.4dB
-
-
12V
TO-253-4, TO-253AA
PG-SOT143-4
BLC8G27LS-245AVZ
Ampleon USA Inc.

RF FET LDMOS 65V 14.5DB SOT12512

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.69GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 56W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1251-2
  • Supplier Device Package: SOT-1251-2
패키지: SOT-1251-2
재고2,512
2.5GHz ~ 2.69GHz
14.5dB
28V
-
-
500mA
56W
65V
SOT-1251-2
SOT-1251-2
MRF8S23120HSR3
NXP

FET RF 65V 2.3GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고3,520
2.3GHz
16dB
28V
-
-
800mA
28W
65V
NI-780S
NI-780S
BLF7G20L-250P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 65A
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고2,656
1.81GHz ~ 1.88GHz
18dB
28V
65A
-
1.9A
70W
65V
SOT539A
SOT539A
MRF8S26060HSR3
NXP

FET RF 65V 2.69GHZ

  • Transistor Type: LDMOS
  • Frequency: 2.69GHz
  • Gain: 16.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 15.5W
  • Voltage - Rated: 65V
  • Package / Case: NI-400S-240
  • Supplier Device Package: NI-400S-240
패키지: NI-400S-240
재고3,488
2.69GHz
16.3dB
28V
-
-
450mA
15.5W
65V
NI-400S-240
NI-400S-240
BF245C_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 25MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고2,288
-
-
-
25mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF7S38075HR5
NXP

FET RF 65V 3.6GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고3,520
3.4GHz ~ 3.6GHz
14dB
30V
-
-
900mA
12W
65V
NI-780
NI-780
BLF6G22-45,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT608A

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 405mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608A
  • Supplier Device Package: CDFM2
패키지: SOT-608A
재고3,584
2.11GHz ~ 2.17GHz
18.5dB
28V
-
-
405mA
2.5W
65V
SOT-608A
CDFM2
MRF373ALR5
NXP

FET RF 70V 860MHZ NI-360

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 18.2dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 75W
  • Voltage - Rated: 70V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360
패키지: NI-360
재고3,584
860MHz
18.2dB
32V
-
-
200mA
75W
70V
NI-360
NI-360
BF1208D,115
NXP

MOSFET N-CH DUAL GATE SOD666

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 32dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 19mA
  • Power - Output: -
  • Voltage - Rated: 6V
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
패키지: SOT-563, SOT-666
재고3,840
400MHz
32dB
5V
30mA
0.9dB
19mA
-
6V
SOT-563, SOT-666
SOT-666
PXAC203302FVV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,136
-
-
-
-
-
-
-
-
-
-
A2T21H410-24SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 15.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 72W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
패키지: NI-1230-4LS2L
재고5,904
2.17GHz
15.6dB
28V
-
-
600mA
72W
65V
NI-1230-4LS2L
NI-1230-4LS2L
BLF8G10LS-270GV,12
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT1244C

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 67W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244C
  • Supplier Device Package: CDFM6
패키지: SOT-1244C
재고2,208
871.5MHz ~ 891.5MHz
19.5dB
28V
-
-
2A
67W
65V
SOT-1244C
CDFM6
BLF7G27LS-100,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고3,776
2.5GHz ~ 2.7GHz
18dB
28V
28A
-
900mA
20W
65V
SOT-502B
SOT502B
PD54003-E
STMicroelectronics

FET RF 25V 500MHZ PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 12dB
  • Voltage - Test: 7.5V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 3W
  • Voltage - Rated: 25V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고6,816
500MHz
12dB
7.5V
4A
-
50mA
3W
25V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
ATF-521P8-TR1
Broadcom Limited

FET RF 7V 2GHZ 8-LPCC

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 17dB
  • Voltage - Test: 4.5V
  • Current Rating: 500mA
  • Noise Figure: 1.5dB
  • Current - Test: 200mA
  • Power - Output: 26.5dBm
  • Voltage - Rated: 7V
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-LPCC (2x2)
패키지: 8-WFDFN Exposed Pad
재고3,168
2GHz
17dB
4.5V
500mA
1.5dB
200mA
26.5dBm
7V
8-WFDFN Exposed Pad
8-LPCC (2x2)
BLF6G22LS-100,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.2DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.2dB
  • Voltage - Test: 28V
  • Current Rating: 29A
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고4,768
2.11GHz ~ 2.17GHz
18.2dB
28V
29A
-
950mA
25W
65V
SOT-502B
SOT502B
hot MRFE6VS25GNR1
NXP

FET RF 133V 512MHZ TO-270-2

  • Transistor Type: LDMOS
  • Frequency: 512MHz
  • Gain: 25.4dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 25W
  • Voltage - Rated: 133V
  • Package / Case: TO-270-2 Gull Wing
  • Supplier Device Package: TO-270-2 GULL
패키지: TO-270-2 Gull Wing
재고9,036
512MHz
25.4dB
50V
-
-
10mA
25W
133V
TO-270-2 Gull Wing
TO-270-2 GULL
BF511,215
NXP

JFET N-CH 20V 30MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: 1.5dB
  • Current - Test: 5mA
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고7,168
100MHz
-
10V
30mA
1.5dB
5mA
-
20V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
PTVA102001EA-V1-R2
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A3I25X050NR1
NXP

RF MOSFET LDMOS 28V OM400-8

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz ~ 2.7GHz
  • Gain: 28.8dB @ 2.59GHz
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 130 mA
  • Power - Output: 5.6W
  • Voltage - Rated: 65 V
  • Package / Case: OM-400-8
  • Supplier Device Package: OM-400-8
패키지: -
Request a Quote
2.3GHz ~ 2.7GHz
28.8dB @ 2.59GHz
28 V
10µA
-
130 mA
5.6W
65 V
OM-400-8
OM-400-8
MMRF5017HS-1GHZ
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTFB213004F-V2-R0
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-37275-6

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.4 A
  • Power - Output: 60W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275-6/2
  • Supplier Device Package: H-37275-6/2
패키지: -
Request a Quote
2.17GHz
18dB
30 V
-
-
2.4 A
60W
65 V
H-37275-6/2
H-37275-6/2
CGH40025P
MACOM Technology Solutions

RF MOSFET HEMT 28V 440196

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 13dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250 mA
  • Power - Output: 30W
  • Voltage - Rated: 84 V
  • Package / Case: 440196
  • Supplier Device Package: 440196
패키지: -
Request a Quote
6GHz
13dB
28 V
-
-
250 mA
30W
84 V
440196
440196
ART700FHSU
Ampleon USA Inc.

RF MOSFET LDMOS 55V LDMOST

  • Transistor Type: LDMOS
  • Frequency: 1MHz ~ 450MHz
  • Gain: 28.6dB
  • Voltage - Test: 55 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 700W
  • Voltage - Rated: 177 V
  • Package / Case: SOT-1214B
  • Supplier Device Package: LDMOST
패키지: -
재고129
1MHz ~ 450MHz
28.6dB
55 V
1.4µA
-
1.2 A
700W
177 V
SOT-1214B
LDMOST
UF2815B
MACOM Technology Solutions

RF MOSFET 28V 6L-FLG

  • Transistor Type: -
  • Frequency: 500MHz
  • Gain: 10dB
  • Voltage - Test: 28 V
  • Current Rating: 3mA
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: 6L-FLG
  • Supplier Device Package: 6L-FLG
패키지: -
Request a Quote
500MHz
10dB
28 V
3mA
-
150 mA
-
65 V
6L-FLG
6L-FLG