페이지 95 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  95/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFB260605ELV1R250XTMA1
Infineon Technologies

IC FET RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,768
-
-
-
-
-
-
-
-
-
-
PTFB082817FHV1XWSA1
Infineon Technologies

IC FET RF LDMOS H-34288

  • Transistor Type: LDMOS
  • Frequency: 821MHz
  • Gain: 19.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.15A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-34288-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고5,424
821MHz
19.3dB
28V
-
-
2.15A
60W
65V
2-Flatpack, Fin Leads, Flanged
H-34288-2
PTFA240451E V1
Infineon Technologies

IC FET RF LDMOS 45W H-30265-2

  • Transistor Type: LDMOS
  • Frequency: 2.48GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30265-2
패키지: 2-Flatpack, Fin Leads
재고7,840
2.48GHz
14dB
28V
10µA
-
450mA
45W
65V
2-Flatpack, Fin Leads
H-30265-2
BF244A_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 50MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 50mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고6,896
100MHz
-
15V
50mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF7S19170HR3
NXP

FET RF 65V 1.99GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고7,008
1.99GHz
17.2dB
28V
-
-
1.4A
50W
65V
NI-880
NI-880
MRF6S9045MBR1
NXP

FET RF 68V 880MHZ TO-272-2

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 22.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-272-2
  • Supplier Device Package: TO-272-2
패키지: TO-272-2
재고5,152
880MHz
22.7dB
28V
-
-
350mA
10W
68V
TO-272-2
TO-272-2
hot MRF6S19060NR1
NXP

FET RF 68V 1.93GHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 610mA
  • Power - Output: 12W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고5,248
1.93GHz
16dB
28V
-
-
610mA
12W
68V
TO-270AB
TO-270 WB-4
MRF5S9150HSR5
NXP

FET RF 68V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 33W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,632
880MHz
19.7dB
28V
-
-
1.5A
33W
68V
NI-780S
NI-780S
BF1100,215
NXP

MOSFET N-CH 14V 30MA SOT143

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 9V
  • Current Rating: 30mA
  • Noise Figure: 2dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 14V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
패키지: TO-253-4, TO-253AA
재고3,568
800MHz
-
9V
30mA
2dB
10mA
-
14V
TO-253-4, TO-253AA
SOT-143B
BF886H6327XTSA1
Infineon Technologies

MOSFET N-CH RF 12V 30MA SOT-343

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,648
-
-
-
-
-
-
-
-
-
-
BLF184XRGQ
Ampleon USA Inc.

RF FET LDMOS 135V 23DB SOT1214C

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 23.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 700W
  • Voltage - Rated: 135V
  • Package / Case: SOT-1214C
  • Supplier Device Package: SOT1214C
패키지: SOT-1214C
재고6,336
108MHz
23.9dB
50V
-
-
100mA
700W
135V
SOT-1214C
SOT1214C
BLF8G10LS-270V,112
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 67W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
패키지: SOT-1244B
재고4,752
871.5MHz ~ 891.5MHz
19.5dB
28V
-
-
2A
67W
65V
SOT-1244B
CDFM6
AFT09MP055NR1
NXP

FET RF 2CH 40V 870MHZ TO-270

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 15.7dB
  • Voltage - Test: 12.5V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 1W
  • Voltage - Rated: 40V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고7,360
870MHz
15.7dB
12.5V
-
-
550mA
1W
40V
TO-270AB
TO-270 WB-4
PD85006TR-E
STMicroelectronics

FET RF 40V 870MHZ POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17dB
  • Voltage - Test: 13.6V
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 5W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
재고7,024
870MHz
17dB
13.6V
2A
-
200mA
5W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
ATF-541M4-BLK
Broadcom Limited

IC ENHANCED MOD SUDIOMORPHIC HEM

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 3V
  • Current Rating: 120mA
  • Noise Figure: 0.5dB
  • Current - Test: 60mA
  • Power - Output: 21.4dBm
  • Voltage - Rated: 5V
  • Package / Case: 0505 (1412 Metric)
  • Supplier Device Package: MiniPak 1412
패키지: 0505 (1412 Metric)
재고4,720
2GHz
17.5dB
3V
120mA
0.5dB
60mA
21.4dBm
5V
0505 (1412 Metric)
MiniPak 1412
BLF888DU
Ampleon USA Inc.

RF FET LDMOS 104V 21DB SOT539A

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 250W
  • Voltage - Rated: 104V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고5,728
860MHz
21dB
50V
-
-
1.3A
250W
104V
SOT539A
SOT539A
BLP25M710Z
Ampleon USA Inc.

RF FET LDMOS 65V 16DB 12VDFN

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.14GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 110mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: 12-HVSON (5x6)
패키지: 12-VDFN Exposed Pad
재고3,600
2.14GHz
16dB
28V
-
-
110mA
2W
65V
12-VDFN Exposed Pad
12-HVSON (5x6)
MRF6V2010NR1
NXP

FET RF 110V 220MHZ TO270-2

  • Transistor Type: LDMOS
  • Frequency: 220MHz
  • Gain: 23.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 30mA
  • Power - Output: 10W
  • Voltage - Rated: 110V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고5,856
220MHz
23.9dB
50V
-
-
30mA
10W
110V
TO-270AA
TO-270-2
BLP7G22-10Z
Ampleon USA Inc.

RF FET LDMOS 65V 16DB 12VDFN

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.14GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 110mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: 12-HVSON (5x6)
패키지: 12-VDFN Exposed Pad
재고2,576
2.14GHz
16dB
28V
-
-
110mA
2W
65V
12-VDFN Exposed Pad
12-HVSON (5x6)
BLP8G27-5Z
Ampleon USA Inc.

RF FET LDMOS 65V 18DB 16VDFN

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 55mA
  • Power - Output: 750mW
  • Voltage - Rated: 65V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-HVSON (4x6)
패키지: 16-VDFN Exposed Pad
재고4,800
2.14GHz
18dB
28V
-
-
55mA
750mW
65V
16-VDFN Exposed Pad
16-HVSON (4x6)
NPT2022
M/A-Com Technology Solutions

HEMT N-CH 48V 100W DC-2GHZ

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 2GHz
  • Gain: 17dB
  • Voltage - Test: 48V
  • Current Rating: 14A
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 100W
  • Voltage - Rated: 160V
  • Package / Case: TO-272BC
  • Supplier Device Package: TO-272-2
패키지: TO-272BC
재고5,296
0Hz ~ 2GHz
17dB
48V
14A
-
600mA
100W
160V
TO-272BC
TO-272-2
MMRF1014NT1
NXP

FET RF 68V 1.96GHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 4W
  • Voltage - Rated: 68V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고18,216
1.96GHz
18dB
28V
-
-
50mA
4W
68V
PLD-1.5
PLD-1.5
MRF24301HR5
NXP

RF MOSFET LDMOS NI780

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz ~ 2.5GHz
  • Gain: 13.5dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 300W
  • Voltage - Rated: -
  • Package / Case: SOT-957A
  • Supplier Device Package: NI-780H-2L
패키지: -
Request a Quote
2.4GHz ~ 2.5GHz
13.5dB
-
-
-
-
300W
-
SOT-957A
NI-780H-2L
A2T08VD020NT1
NXP

RF MOSFET LDMOS 48V 24QFN

  • Transistor Type: LDMOS
  • Frequency: 728MHz ~ 960MHz
  • Gain: 19.1dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 18W
  • Voltage - Rated: 105 V
  • Package / Case: 24-PowerQFN
  • Supplier Device Package: 24-PQFN-EP (8x8)
패키지: -
Request a Quote
728MHz ~ 960MHz
19.1dB
48 V
10µA
-
40 mA
18W
105 V
24-PowerQFN
24-PQFN-EP (8x8)
RF5L051K5CB4
STMicroelectronics

RF MOSFET LDMOS 50V D4E

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 22dB
  • Voltage - Test: 50 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 1500W
  • Voltage - Rated: 110 V
  • Package / Case: D4E
  • Supplier Device Package: D4E
패키지: -
Request a Quote
500MHz
22dB
50 V
1µA
-
200 mA
1500W
110 V
D4E
D4E
94-2402
International Rectifier

RF MOSFET 400V

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
1011GN-1200VEL
Microchip Technology

RF MOSFET HEMT 50V 55-Q03P

  • Transistor Type: HEMT
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 1200W
  • Voltage - Rated: 150 V
  • Package / Case: 55-Q03P
  • Supplier Device Package: 55-Q03P
패키지: -
Request a Quote
1.03GHz ~ 1.09GHz
20dB
50 V
-
-
150 mA
1200W
150 V
55-Q03P
55-Q03P
CGHV60040D-GP4
MACOM Technology Solutions

RF MOSFET HEMT 50V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 65 mA
  • Power - Output: 40W
  • Voltage - Rated: 150 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
재고60
6GHz
17dB
50 V
-
-
65 mA
40W
150 V
Die
Die