페이지 93 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  93/138
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제조업체
설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA181001HL V1 R250
Infineon Technologies

IC FET RF LDMOS 100W PG-64248-2

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: PG-64248-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고3,312
1.88GHz
16.5dB
28V
1µA
-
750mA
100W
65V
2-Flatpack, Fin Leads, Flanged
PG-64248-2
hot NE3513M04-T2B-A
CEL

FET RF 4V 12GHZ M04 4SMD

  • Transistor Type: N-Channel GaAs HJ-FET
  • Frequency: 12GHz
  • Gain: 13dB
  • Voltage - Test: 2V
  • Current Rating: 60mA
  • Noise Figure: 0.65dB
  • Current - Test: 10mA
  • Power - Output: 125mW
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-Super Mini Mold
패키지: 4-SMD, Flat Leads
재고1,413,840
12GHz
13dB
2V
60mA
0.65dB
10mA
125mW
4V
4-SMD, Flat Leads
4-Super Mini Mold
MRFE6VP61K25HSR6
NXP

FET RF 2CH 133V 230MHZ NI-1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1250W
  • Voltage - Rated: 133V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고6,352
230MHz
24dB
50V
-
-
100mA
1250W
133V
NI-1230S
NI-1230S
MRF8P20160HR3
NXP

FET RF 2CH 65V 1.92GHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.92GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 37W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: NI-780-4
재고5,840
1.92GHz
16.5dB
28V
-
-
550mA
37W
65V
NI-780-4
NI-780-4
MRF6S27085HSR5
NXP

FET RF 68V 2.66GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.66GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 20W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고3,536
2.66GHz
15.5dB
28V
-
-
900mA
20W
68V
NI-780S
NI-780S
hot J210
Fairchild/ON Semiconductor

JFET N-CH 25V 15MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고76,200
-
-
-
15mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot ATF-54143-TR1
Broadcom Limited

FET RF 5V 2GHZ SOT-343

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 16.6dB
  • Voltage - Test: 3V
  • Current Rating: 120mA
  • Noise Figure: 0.5dB
  • Current - Test: 60mA
  • Power - Output: 20.4dBm
  • Voltage - Rated: 5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
패키지: SC-82A, SOT-343
재고171,108
2GHz
16.6dB
3V
120mA
0.5dB
60mA
20.4dBm
5V
SC-82A, SOT-343
SOT-343
PTFA192001EV4R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 30V H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 15.9dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36260-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고7,664
1.93GHz ~ 1.99GHz
15.9dB
30V
10µA
-
1.6A
200W
65V
2-Flatpack, Fin Leads, Flanged
H-36260-2
BLA6H0912-500,112
Ampleon USA Inc.

RF FET LDMOS 100V 17DB SOT634A

  • Transistor Type: LDMOS
  • Frequency: 960MHz ~ 1.22GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: 54A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 450W
  • Voltage - Rated: 100V
  • Package / Case: SOT634A
  • Supplier Device Package: CDFM2
패키지: SOT634A
재고5,776
960MHz ~ 1.22GHz
17dB
50V
54A
-
100mA
450W
100V
SOT634A
CDFM2
BLC8G22LS-450AVZ
Ampleon USA Inc.

RF FET LDMOS 65V 14DB SOT12583

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 85W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1258-3
  • Supplier Device Package: DFM6
패키지: SOT-1258-3
재고2,272
2.11GHz ~ 2.17GHz
14dB
28V
-
-
1A
85W
65V
SOT-1258-3
DFM6
BLF8G20LS-400PGVQ
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT1242C

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 3.4A
  • Power - Output: 95W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1242C
  • Supplier Device Package: CDFM8
패키지: SOT-1242C
재고5,104
1.81GHz ~ 1.88GHz
19dB
28V
-
-
3.4A
95W
65V
SOT-1242C
CDFM8
BLC9G20XS-550AVTY
Ampleon USA Inc.

BLC9G20XS-550AVT/SOT1258/REELD

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,616
-
-
-
-
-
-
-
-
-
-
BF510,215
NXP

JFET N-CH 20V 30MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 10V
  • Current Rating: 30mA
  • Noise Figure: 1.5dB
  • Current - Test: 5mA
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고3,552
100MHz
-
10V
30mA
1.5dB
5mA
-
20V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MMRF1006HR5
NXP

FET RF 2CH 120V 450MHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 450MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 120V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고7,072
450MHz
20dB
50V
-
-
150mA
1000W
120V
SOT-979A
NI-1230-4H
MRF1535FNT1
NXP

FET RF 40V 520MHZ TO272-6

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 13.5dB
  • Voltage - Test: 12.5V
  • Current Rating: 6A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 35W
  • Voltage - Rated: 40V
  • Package / Case: TO-272BA
  • Supplier Device Package: TO-272-6
패키지: TO-272BA
재고5,120
520MHz
13.5dB
12.5V
6A
-
500mA
35W
40V
TO-272BA
TO-272-6
MRFE6S9045NR1
NXP

FET RF 66V 880MHZ TO-270-2

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 22.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 10W
  • Voltage - Rated: 66V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
패키지: TO-270AA
재고7,808
880MHz
22.1dB
28V
-
-
350mA
10W
66V
TO-270AA
TO-270-2
BLP25M705Z
Ampleon USA Inc.

RF FET LDMOS 65V 16DB 12VDFN

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 55mA
  • Power - Output: 1W
  • Voltage - Rated: 65V
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: 12-HVSON (5x6)
패키지: 12-VDFN Exposed Pad
재고2,288
2.14GHz
16dB
28V
-
-
55mA
1W
65V
12-VDFN Exposed Pad
12-HVSON (5x6)
BLF879PS,112
Ampleon USA Inc.

RF FET LDMOS 104V 21DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 21dB
  • Voltage - Test: 42V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 200W
  • Voltage - Rated: 104V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
패키지: SOT539B
재고6,636
860MHz
21dB
42V
-
-
1.3A
200W
104V
SOT539B
SOT539B
hot MRF1535NT1
NXP

FET RF 40V 520MHZ TO272-6 WRAP

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 13.5dB
  • Voltage - Test: 12.5V
  • Current Rating: 6A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 35W
  • Voltage - Rated: 40V
  • Package / Case: TO-272AA
  • Supplier Device Package: TO-272-6
패키지: TO-272AA
재고20,616
520MHz
13.5dB
12.5V
6A
-
500mA
35W
40V
TO-272AA
TO-272-6
hot ATF-38143-TR1G
Broadcom Limited

IC PHEMT 1.9GHZ 4.5V 10MA SOT343

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 16dB
  • Voltage - Test: 2V
  • Current Rating: 145mA
  • Noise Figure: 0.4dB
  • Current - Test: 10mA
  • Power - Output: 12dBm
  • Voltage - Rated: 4.5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343, SC70 4-Lead
패키지: SC-82A, SOT-343
재고309,912
2GHz
16dB
2V
145mA
0.4dB
10mA
12dBm
4.5V
SC-82A, SOT-343
SOT-343, SC70 4-Lead
BLF578XR,112
Ampleon USA Inc.

RF FET LDMOS 110V 23.5DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 225MHz
  • Gain: 23.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40mA
  • Power - Output: 1400W
  • Voltage - Rated: 110V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
패키지: SOT539A
재고7,840
225MHz
23.5dB
50V
-
-
40mA
1400W
110V
SOT539A
SOT539A
GTRA384802FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V

  • Transistor Type: HEMT
  • Frequency: 3.6GHz ~ 3.8GHz
  • Gain: 13.7dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250 mA
  • Power - Output: 63W
  • Voltage - Rated: 125 V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고150
3.6GHz ~ 3.8GHz
13.7dB
48 V
-
-
250 mA
63W
125 V
-
-
BLC10G18XS-360AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS SOT1258-7

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 18dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: SOT-1258-7
  • Supplier Device Package: SOT-1258-7
패키지: -
재고180
1.805GHz ~ 1.88GHz
18dB
-
-
-
-
-
-
SOT-1258-7
SOT-1258-7
MMBFJ310LT1
onsemi

RF MOSFET N-CH JFET 10V SOT23

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
2SK1645V-03-TR-E
onsemi

RF MOSFET MESFET 6V

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
GTVA261802FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 16.8dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 160 mA
  • Power - Output: 170W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
Request a Quote
2.62GHz ~ 2.69GHz
16.8dB
48 V
-
-
160 mA
170W
125 V
H-37248C-4
H-37248C-4
2729GN-300V
Microchip Technology

RF MOSFET HEMT 50V 55-QP

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 2.9GHz
  • Gain: 15.3dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 75 mA
  • Power - Output: 335W
  • Voltage - Rated: 125 V
  • Package / Case: 55-QP
  • Supplier Device Package: 55-QP
패키지: -
Request a Quote
2.7GHz ~ 2.9GHz
15.3dB
50 V
-
-
75 mA
335W
125 V
55-QP
55-QP
BLC9H10XS-606AY
Ampleon USA Inc.

RF MOSFET LDMOS 48V SOT1250-4

  • Transistor Type: LDMOS
  • Frequency: 616MHz ~ 960MHz
  • Gain: 18dB
  • Voltage - Test: 48 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.8 A
  • Power - Output: 600W
  • Voltage - Rated: 110 V
  • Package / Case: SOT-1250-4
  • Supplier Device Package: SOT1250-4
패키지: -
Request a Quote
616MHz ~ 960MHz
18dB
48 V
1.4µA
-
1.8 A
600W
110 V
SOT-1250-4
SOT1250-4