페이지 1455 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  1,455/1,502
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설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
94-4762
Infineon Technologies

MOSFET N-CH 55V 27A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,936
MOSFET (Metal Oxide)
55V
27A (Tc)
10V
4V @ 250µA
34nC @ 10V
700pF @ 25V
±20V
-
68W (Tc)
45 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot HUF75637P3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 44A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 108nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고489,180
MOSFET (Metal Oxide)
100V
44A (Tc)
10V
4V @ 250µA
108nC @ 20V
1700pF @ 25V
±20V
-
155W (Tc)
30 mOhm @ 44A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FQB65N06TM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 65A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,672
MOSFET (Metal Oxide)
60V
65A (Tc)
10V
4V @ 250µA
65nC @ 10V
2410pF @ 25V
±25V
-
3.75W (Ta), 150W (Tc)
16 mOhm @ 32.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR230ATM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.75A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,480
MOSFET (Metal Oxide)
200V
7.5A (Tc)
5V
2V @ 250µA
27nC @ 5V
755pF @ 25V
±20V
-
2.5W (Ta), 48W (Tc)
400 mOhm @ 3.75A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot ZXMN3A02N8TA
Diodes Incorporated

MOSFET N-CH 30V 5.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고415,716
MOSFET (Metal Oxide)
30V
7.3A (Ta)
4.5V, 10V
1V @ 250µA
26.8nC @ 10V
1400pF @ 25V
±20V
-
1.56W (Ta)
25 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
NTMFS5C423NLT3G
ON Semiconductor

MOSFET N-CH 40V 150A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고4,448
MOSFET (Metal Oxide)
40V
-
4.5V, 10V
2V @ 250µA
50nC @ 10V
3100pF @ 20V
±20V
-
3.7W (Ta), 83W (Tc)
2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
BUK7Y3R0-40EX
Nexperia USA Inc.

MOSFET N-CH 40V LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
패키지: SC-100, SOT-669
재고3,552
MOSFET (Metal Oxide)
40V
-
-
-
-
-
-
-
-
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
IXTT440N04T4HV
IXYS

40V/440A TRENCHT4 PWR MOSFET TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 940W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고6,016
MOSFET (Metal Oxide)
40V
440A (Tc)
10V
4V @ 250µA
480nC @ 10V
26000pF @ 25V
±15V
-
940W (Tc)
1.25 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot SPP18P06P H
Infineon Technologies

MOSFET P-CH 60V 18.7A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 81.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고450,012
MOSFET (Metal Oxide)
60V
18.7A (Ta)
10V
4V @ 1mA
28nC @ 10V
860pF @ 25V
±20V
-
81.1W (Ta)
130 mOhm @ 13.2A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot RUS100N02TB
Rohm Semiconductor

MOSFET N-CH 20V 10A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고391,776
MOSFET (Metal Oxide)
20V
10A (Ta)
1.5V, 4.5V
1V @ 1mA
24nC @ 4.5V
2250pF @ 10V
±10V
-
2W (Ta)
12 mOhm @ 10A, 4.5V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot FDC645N
Fairchild/ON Semiconductor

MOSFET N-CH 30V 5.5A SSOT-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고151,824
MOSFET (Metal Oxide)
30V
5.5A (Ta)
4.5V, 10V
2V @ 250µA
21nC @ 4.5V
1460pF @ 15V
±12V
-
1.6W (Ta)
26 mOhm @ 6.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-6
SOT-23-6 Thin, TSOT-23-6
hot RTE002P02TL
Rohm Semiconductor

MOSFET P-CH 20V 0.2A SOT416

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
패키지: SC-75, SOT-416
재고2,838,492
MOSFET (Metal Oxide)
20V
200mA (Ta)
2.5V, 4.5V
2V @ 1mA
-
50pF @ 10V
±12V
-
150mW (Ta)
1.5 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
BSS214NWH6327XTSA1
Infineon Technologies

MOSFET N-CH 20V 1.5A SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT323-3
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고126,606
MOSFET (Metal Oxide)
20V
1.5A (Ta)
2.5V, 4.5V
1.2V @ 3.7µA
0.8nC @ 5V
143pF @ 10V
±12V
-
500mW (Ta)
140 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT323-3
SC-70, SOT-323
hot SI7465DP-T1-E3
Vishay Siliconix

MOSFET P-CH 60V 3.2A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
패키지: PowerPAK? SO-8
재고64,812
MOSFET (Metal Oxide)
60V
3.2A (Ta)
4.5V, 10V
3V @ 250µA
40nC @ 10V
-
±20V
-
1.5W (Ta)
64 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
NTE2375
NTE Electronics, Inc

MOSFET N-CHANNEL 100V 41A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
100 V
41A (Tc)
10V
4V @ 250µA
140 nC @ 10 V
2800 pF @ 25 V
±20V
-
230W (Tc)
55mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
ISL9N322AP3
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Ta)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
35A (Tc)
4.5V, 10V
3V @ 250µA
27 nC @ 10 V
970 pF @ 15 V
±20V
-
50W (Ta)
22mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
CMS35P03D-HF
Comchip Technology

MOSFET P-CH 30V 8.5A/34A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
8.5A (Ta), 34A (Tc)
4.5V, 10V
2.5V @ 250µA
12.5 nC @ 4.5 V
1345 pF @ 15 V
±20V
-
2W (Ta), 34W (Tc)
25mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
XP60PN72REN
YAGEO XSEMI

MOSFET N-CH 600V 53MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 53mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 72Ohm @ 50mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고3,000
MOSFET (Metal Oxide)
600 V
53mA (Ta)
10V
5V @ 250µA
4 nC @ 10 V
80 pF @ 100 V
±20V
-
500mW (Ta)
72Ohm @ 50mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SISHA04DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 30.9A/40A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8SH
  • Package / Case: PowerPAK® 1212-8SH
패키지: -
재고17,538
MOSFET (Metal Oxide)
30 V
30.9A (Ta), 40A (Tc)
4.5V, 10V
2.2V @ 250µA
77 nC @ 10 V
3595 pF @ 15 V
+20V, -16V
-
3.7W (Ta), 52W (Tc)
2.15mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
IXTH86N25T
IXYS

MOSFET N-CH 250V 86A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Ta)
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
250 V
86A (Tc)
10V
5V @ 1mA
105 nC @ 10 V
5330 pF @ 25 V
±30V
-
540W (Ta)
37mOhm @ 43A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
FDD9409L-F085
onsemi

MOSFET N-CH 40V 90A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tj)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
90A (Tc)
4.5V, 10V
3V @ 250µA
68 nC @ 10 V
3360 pF @ 20 V
±20V
-
150W (Tj)
2.6mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
2N7002KDQ-TP
Micro Commercial Co

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 526mW (Tj)
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
300mA (Ta)
5V, 10V
2.5V @ 250µA
0.38 nC @ 4.5 V
15 pF @ 25 V
±20V
-
526mW (Tj)
2.5Ohm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
DMN2053UWQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 470mW (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
패키지: -
Request a Quote
MOSFET (Metal Oxide)
20 V
2.9A (Ta)
1.5V, 4.5V
1V @ 250µA
3.6 nC @ 4.5 V
369 pF @ 10 V
±12V
-
470mW (Ta)
56mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
IRLL014TRPBF-BE3
Vishay Siliconix

MOSFET N-CH 60V 2.7A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: -
재고9,588
MOSFET (Metal Oxide)
60 V
2.7A (Tc)
4V, 5V
2V @ 250µA
8.4 nC @ 5 V
400 pF @ 25 V
±10V
-
2W (Ta), 3.1W (Tc)
200mOhm @ 1.6A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
P5103EMG-ML
MOSLEADER

Single P -30V -3.8A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MTV32N20E
onsemi

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDV304P-F169
onsemi

P-CHANNEL DIGITAL FET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 10 V
  • Vgs (Max): -8V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
25 V
460mA (Ta)
2.7V, 4.5V
1.5V @ 250µA
1.5 nC @ 4.5 V
63 pF @ 10 V
-8V
-
350mW (Ta)
1.1Ohm @ 500mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
IAUC120N04S6N013ATMA1
Infineon Technologies

IAUC120N04S6N013ATMA1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
패키지: -
재고30,000
MOSFET (Metal Oxide)
40 V
120A (Tc)
7V, 10V
3V @ 60µA
68 nC @ 10 V
4260 pF @ 25 V
±20V
-
115W (Tc)
1.34mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN