페이지 1457 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  1,457/1,502
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부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFC4568EF
Infineon Technologies

MOSFET N-CH WAFER

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고7,760
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot IRFR2307ZPBF
Infineon Technologies

MOSFET N-CH 75V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고392,760
MOSFET (Metal Oxide)
75V
42A (Tc)
10V
4V @ 100µA
75nC @ 10V
2190pF @ 25V
±20V
-
110W (Tc)
16 mOhm @ 32A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
PHK24NQ04LT,518
NXP

MOSFET N-CH 40V 21.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2985pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,000
MOSFET (Metal Oxide)
40V
21.2A (Tc)
4.5V, 10V
2V @ 1mA
64nC @ 10V
2985pF @ 25V
±20V
-
6.25W (Tc)
7.7 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot STP16NS25
STMicroelectronics

MOSFET N-CH 250V 16A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고27,024
MOSFET (Metal Oxide)
250V
16A (Tc)
10V
4V @ 250µA
83nC @ 10V
1270pF @ 25V
±20V
-
140W (Tc)
280 mOhm @ 8A, 10V
-65°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFR18N15DTRRP
Infineon Technologies

MOSFET N-CH 150V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,624
MOSFET (Metal Oxide)
150V
18A (Tc)
10V
5.5V @ 250µA
43nC @ 10V
900pF @ 25V
±30V
-
110W (Tc)
125 mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4C020NT3G
ON Semiconductor

MOSFET N-CH 30V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 303A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 134W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
패키지: 8-PowerTDFN, 5 Leads
재고5,120
MOSFET (Metal Oxide)
30V
47A (Ta), 303A (Tc)
4.5V, 10V
2.2V @ 250µA
139nC @ 10V
10144pF @ 15V
±20V
-
3.2W (Ta), 134W (Tc)
0.7 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
SQM50N04-4M1_GE3
Vishay Siliconix

MOSFET N-CH 40V 50A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6715pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,136
MOSFET (Metal Oxide)
40V
50A (Tc)
10V
3.5V @ 250µA
105nC @ 10V
6715pF @ 25V
±20V
-
150W (Tc)
4.1 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C673NLWFT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고5,168
MOSFET (Metal Oxide)
60V
-
4.5V, 10V
2V @ 35µA
9.5nC @ 10V
880pF @ 25V
±20V
-
3.6W (Ta), 46W (Tc)
9.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
BUK9245-55A,118
Nexperia USA Inc.

MOSFET N-CH 55V 28A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1006pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,016
MOSFET (Metal Oxide)
55V
28A (Tc)
4.5V, 10V
2V @ 1mA
14nC @ 5V
1006pF @ 25V
±15V
-
70W (Tc)
40 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTMFS4835NT1G
ON Semiconductor

MOSFET N-CH 30V 12A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
패키지: 8-PowerTDFN, 5 Leads
재고193,572
MOSFET (Metal Oxide)
30V
13A (Ta), 130A (Tc)
4.5V, 11.5V
2.5V @ 250µA
52nC @ 11.5V
3100pF @ 12V
±20V
-
890mW (Ta), 62.5W (Tc)
3.5 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
FDMS86580_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 50A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tj)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고3,520
MOSFET (Metal Oxide)
60V
50A (Tc)
10V
4.2V @ 250µA
30nC @ 10V
1430pF @ 30V
±20V
-
75W (Tj)
9.6 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
Power56
8-PowerTDFN
SSM3J325F,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A S-MINI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,192
MOSFET (Metal Oxide)
20V
2A (Ta)
1.5V, 4.5V
-
4.6nC @ 4.5V
270pF @ 10V
±8V
-
600mW (Ta)
150 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
PMZ370UNEYL
Nexperia USA Inc.

MOSFET N-CH 30V 0.9A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.05V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 490 mOhm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006-3
  • Package / Case: SC-101, SOT-883
패키지: SC-101, SOT-883
재고3,200
MOSFET (Metal Oxide)
30V
900mA (Ta)
1.8V, 4.5V
1.05V @ 250µA
1.16nC @ 4.5V
78pF @ 25V
±8V
-
360mW (Ta), 2.7W (Tc)
490 mOhm @ 500mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006-3
SC-101, SOT-883
hot FDP55N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 55A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 27.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고103,824
MOSFET (Metal Oxide)
60V
55A (Tc)
10V
4V @ 250µA
37nC @ 10V
1510pF @ 25V
±25V
-
114W (Tc)
22 mOhm @ 27.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot SI7434DP-T1-E3
Vishay Siliconix

MOSFET N-CH 250V 2.3A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
패키지: PowerPAK? SO-8
재고5,056
MOSFET (Metal Oxide)
250V
2.3A (Ta)
6V, 10V
4V @ 250µA
50nC @ 10V
-
±20V
-
1.9W (Ta)
155 mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
BSC030N03LSGATMA1
Infineon Technologies

MOSFET N-CH 30V 100A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고225,006
MOSFET (Metal Oxide)
30V
23A (Ta), 100A (Tc)
4.5V, 10V
2.2V @ 250µA
55nC @ 10V
4300pF @ 15V
±20V
-
2.5W (Ta), 69W (Tc)
3 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
DMG2302UK-7
Diodes Incorporated

MOSFET N-CH 20V 2.8A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고149,502
MOSFET (Metal Oxide)
20V
2.8A (Ta)
2.5V, 4.5V
1V @ 250µA
2.8nC @ 10V
130pF @ 10V
±12V
-
660mW (Ta)
90 mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
GSFC02A05
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -5.00A, -2

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3L
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고14,775
MOSFET (Metal Oxide)
20 V
5A (Tc)
1.8V, 4.5V
1V @ 250µA
24 nC @ 4.5 V
1930 pF @ 10 V
±12V
-
1.6W (Tc)
22mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3L
TO-236-3, SC-59, SOT-23-3
IRFU220BTU
Fairchild Semiconductor

IRFU220 - HEXFET N-CHANNEL POWER

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STW8N120K5
STMicroelectronics

MOSFET N-CH 1200V 6A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
재고49,083
MOSFET (Metal Oxide)
1200 V
6A (Tc)
10V
5V @ 100µA
13.7 nC @ 10 V
505 pF @ 100 V
±30V
-
130W (Tc)
2Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
ISC015N06NM5LF2ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 275A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.45V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 217W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
패키지: -
재고14,880
MOSFET (Metal Oxide)
60 V
32A (Ta), 275A (Tc)
10V
3.45V @ 120µA
113 nC @ 10 V
9000 pF @ 30 V
±20V
-
3W (Ta), 217W (Tc)
1.55mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
2SK3377-0-Z-E2-AZ
Renesas Electronics Corporation

TRANSISTOR

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
20A (Tj)
-
-
-
-
-
-
-
-
-
-
-
-
IPTG025N08NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V PG-HSOG-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 108µA
  • Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8-1
  • Package / Case: 8-PowerSMD, Gull Wing
패키지: -
Request a Quote
MOSFET (Metal Oxide)
80 V
28A (Ta), 184A (Tc)
6V, 10V
3.8V @ 108µA
87 nC @ 10 V
6500 pF @ 40 V
±20V
-
3.8W (Ta), 167W (Tc)
2.5mOhm @ 150A 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOG-8-1
8-PowerSMD, Gull Wing
DMTH4002SCTB-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V TO263 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
192A (Tc)
10V
4V @ 250µA
77.5 nC @ 10 V
7180 pF @ 20 V
±20V
-
6W (Ta), 166.7W (Tc)
3mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263AB (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PMPB15XPAX
Nexperia USA Inc.

MOSFET P-CH 12V 8.2A DFN2020MD-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
패키지: -
재고8,925
MOSFET (Metal Oxide)
12 V
8.2A (Ta)
1.8V, 4.5V
1V @ 250µA
100 nC @ 4.5 V
2875 pF @ 6 V
±12V
-
1.7W (Ta), 12.5W (Tc)
20mOhm @ 8.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
NTMFS5C646NT1G
onsemi

MOSFET N-CH 60V 20A/93A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
20A (Ta), 93A (Tc)
10V
4V @ 80µA
19.2 nC @ 10 V
1500 pF @ 10 V
±20V
-
3.7W (Ta), 79W (Tc)
5mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
MCG60N06YHE3-TP
Micro Commercial Co

N-CHANNEL MOSFET,DFN3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tj)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN3333
  • Package / Case: 8-VDFN Exposed Pad
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
34.5 nC @ 10 V
1666 pF @ 30 V
±20V
-
60W (Tj)
6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN3333
8-VDFN Exposed Pad
DMN2080UCB4-7
Diodes Incorporated

MOSFET N-CH 20V 3A X2-WLB0606-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 710mW
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-WLB0606-4
  • Package / Case: 4-XFBGA, WLBGA
패키지: -
재고9,000
MOSFET (Metal Oxide)
20 V
3A (Ta)
1.5V, 4.5V
1V @ 250µA
7.4 nC @ 4.5 V
540 pF @ 10 V
±8V
-
710mW
56mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-WLB0606-4
4-XFBGA, WLBGA