페이지 678 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  678/1,502
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재고
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF6794MTRPBF
Infineon Technologies

MOSFET N-CH 25V DIRECTFET MX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
패키지: DirectFET? Isometric MX
재고2,224
MOSFET (Metal Oxide)
25V
32A (Ta), 200A (Tc)
4.5V, 10V
2.35V @ 100µA
47nC @ 4.5V
4420pF @ 13V
±20V
Schottky Diode (Body)
2.8W (Ta), 100W (Tc)
1.7 mOhm @ 32A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
IRFSL4228PBF
Infineon Technologies

MOSFET N-CH 150V 83A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고5,296
MOSFET (Metal Oxide)
150V
83A (Tc)
10V
5V @ 250µA
107nC @ 10V
4530pF @ 25V
±30V
-
330W (Tc)
15 mOhm @ 33A, 10V
-40°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
SPP80N03S2L04AKSA1
Infineon Technologies

MOSFET N-CH 30V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
패키지: TO-220-3
재고3,568
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2V @ 130µA
105nC @ 10V
3900pF @ 25V
±20V
-
188W (Tc)
4.2 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
62-0063PBF
Infineon Technologies

MOSFET N-CH 12V 15A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 6V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,272
MOSFET (Metal Oxide)
12V
15A (Ta)
2.8V, 4.5V
1.9V @ 250µA
40nC @ 4.5V
2550pF @ 6V
±12V
-
2.5W (Ta)
8 mOhm @ 15A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRF6603
Infineon Technologies

MOSFET N-CH 30V 27A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V
  • Vgs (Max): +20V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MT
  • Package / Case: DirectFET? Isometric MT
패키지: DirectFET? Isometric MT
재고150,372
MOSFET (Metal Oxide)
30V
27A (Ta), 92A (Tc)
4.5V, 10V
2.5V @ 250µA
72nC @ 4.5V
6590pF @ 15V
+20V, -12V
-
3.6W (Ta), 42W (Tc)
3.4 mOhm @ 25A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MT
DirectFET? Isometric MT
IXTH280N055T
IXYS

MOSFET N-CH 55V 280A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고6,960
MOSFET (Metal Oxide)
55V
280A (Tc)
10V
4V @ 250µA
200nC @ 10V
9700pF @ 25V
±20V
-
550W (Tc)
3.2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
IXTH2N170D2
IXYS

MOSFET N-CH 1700V 2A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고4,368
MOSFET (Metal Oxide)
1700V
2A (Tj)
0V
-
110nC @ 5V
3650pF @ 10V
±20V
Depletion Mode
568W (Tc)
6.5 Ohm @ 1A, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
AON7460
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 300V 1.2A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 830 mOhm @ 1.2A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (3x3)
  • Package / Case: 8-PowerSMD, Flat Leads
패키지: 8-PowerSMD, Flat Leads
재고7,376
MOSFET (Metal Oxide)
300V
1.2A (Ta), 4A (Tc)
10V
4.5V @ 250µA
8.2nC @ 10V
380pF @ 25V
±30V
-
3.1W (Ta), 33W (Tc)
830 mOhm @ 1.2A, 10V
-50°C ~ 150°C (TJ)
Surface Mount
8-DFN (3x3)
8-PowerSMD, Flat Leads
DMN4020LFDE-13
Diodes Incorporated

MOSFET N-CH 40V 8A U-DFN2020-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-UDFN Exposed Pad
패키지: 6-UDFN Exposed Pad
재고6,784
MOSFET (Metal Oxide)
40V
8A (Ta)
4.5V, 10V
2.4V @ 250µA
19.1nC @ 20V
1060pF @ 20V
±20V
-
660mW (Ta)
20 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-UDFN Exposed Pad
FDMC86012
Fairchild/ON Semiconductor

MOSFET N-CH 30V 23A 8MLP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5075pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 23A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power33
  • Package / Case: 8-PowerWDFN
패키지: 8-PowerWDFN
재고7,136
MOSFET (Metal Oxide)
30V
23A (Ta)
2.5V, 4.5V
1.5V @ 250µA
38nC @ 4.5V
5075pF @ 15V
±12V
-
2.3W (Ta), 54W (Tc)
2.7 mOhm @ 23A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Power33
8-PowerWDFN
R6009ENJTL
Rohm Semiconductor

MOSFET N-CH 600V 9A LPT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS (D2PAK)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,088
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
4V @ 1mA
23nC @ 10V
430pF @ 25V
±20V
-
40W (Tc)
535 mOhm @ 2.8A, 10V
150°C (TJ)
Surface Mount
LPTS (D2PAK)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SI7112DN-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 11.3A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 17.8A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
패키지: PowerPAK? 1212-8
재고168,492
MOSFET (Metal Oxide)
30V
11.3A (Tc)
4.5V, 10V
1.5V @ 250µA
27nC @ 4.5V
2610pF @ 15V
±12V
-
1.5W (Ta)
7.5 mOhm @ 17.8A, 10V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
R6009ENX
Rohm Semiconductor

MOSFET N-CH 600V 9A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
패키지: TO-220-2 Full Pack
재고8,340
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
4V @ 1mA
23nC @ 10V
430pF @ 25V
±20V
-
40W (Tc)
535 mOhm @ 2.8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R8002ANX
Rohm Semiconductor

MOSFET N-CH 800V 2A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
패키지: TO-220-2 Full Pack
재고18,936
MOSFET (Metal Oxide)
800V
2A (Tc)
10V
5V @ 1mA
12.7nC @ 10V
210pF @ 25V
±30V
-
35W (Tc)
4.3 Ohm @ 1A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot IRF3808PBF
Infineon Technologies

MOSFET N-CH 75V 140A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고90,840
MOSFET (Metal Oxide)
75V
140A (Tc)
10V
4V @ 250µA
220nC @ 10V
5310pF @ 25V
±20V
-
330W (Tc)
7 mOhm @ 82A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FDP2552
Fairchild/ON Semiconductor

MOSFET N-CH 150V 37A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고109,560
MOSFET (Metal Oxide)
150V
5A (Ta), 37A (Tc)
6V, 10V
4V @ 250µA
51nC @ 10V
2800pF @ 25V
±20V
-
150W (Tc)
36 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
BUK7Y153-100EX
Nexperia USA Inc.

MOSFET N-CH 100V 9.4A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 153 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
패키지: SC-100, SOT-669
재고22,806
MOSFET (Metal Oxide)
100V
9.4A (Tc)
10V
4V @ 1mA
9.4nC @ 10V
497pF @ 25V
±20V
-
37.3W (Tc)
153 mOhm @ 2A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
hot FDY100PZ
Fairchild/ON Semiconductor

MOSFET P-CH 20V 350MA SC-89

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490
패키지: SC-89, SOT-490
재고872,136
MOSFET (Metal Oxide)
20V
350mA (Ta)
1.8V, 4.5V
1.5V @ 250µA
1.4nC @ 4.5V
100pF @ 10V
±8V
-
625mW (Ta)
1.2 Ohm @ 350mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-3
SC-89, SOT-490
hot STN1NF20
STMicroelectronics

MOSFET N-CH 200V 1A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고61,212
MOSFET (Metal Oxide)
200V
1A (Tc)
10V
4V @ 250µA
5.7nC @ 10V
90pF @ 25V
±20V
-
2W (Ta)
1.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
MCU15N10-TP
Micro Commercial Co

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
100 V
15A (Tc)
10V
2.9V @ 250µA
11 nC @ 10 V
612 pF @ 50 V
±20V
-
28W
100mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
GAN7R0-150LBEZ
Nexperia USA Inc.

150 V, 7 MOHM GALLIUM NITRIDE (G

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 85 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 28W
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-FCLGA (3.2x2.2)
  • Package / Case: 3-VLGA
패키지: -
재고4,851
GaNFET (Gallium Nitride)
150 V
28A
5V
2.1V @ 5mA
7.6 nC @ 5 V
865 pF @ 85 V
+6V, -4V
-
28W
7mOhm @ 10A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
3-FCLGA (3.2x2.2)
3-VLGA
IDYH40G200C5XKSA1
Infineon Technologies

SIC DISCRETE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPD70P04P4L08AUMA2
Infineon Technologies

MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
70A (Tc)
4.5V, 10V
2.2V @ 120µA
92 nC @ 10 V
5430 pF @ 25 V
+5V, -16V
-
75W (Tc)
7.8mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
FDMT800150DC-22897
onsemi

FET 150V 6.5 MOHMS PQFN88

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-Dual Cool™88
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
150 V
15A (Ta), 99A (Tc)
6V, 10V
4V @ 250µA
108 nC @ 10 V
8205 pF @ 75 V
±20V
-
3.2W (Ta), 156W (Tc)
6.5mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-Dual Cool™88
8-PowerVDFN
DMP1070U-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 890mW (Ta)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
12 V
5.4A (Ta)
1.8V, 4.5V
1V @ 250µA
11.5 nC @ 4.5 V
143 pF @ 10 V
±8V
-
890mW (Ta)
31mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
NVMJS3D0N06CTWG
onsemi

T6 60V SL LFPAK8 5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 26.9A (Ta), 139.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 135µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.2W (Ta), 112.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 27A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-LFPAK
  • Package / Case: SOT-1205, 8-LFPAK56
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
26.9A (Ta), 139.3A (Tc)
10V
4V @ 135µA
34 nC @ 10 V
2675 pF @ 25 V
±20V
-
4.2W (Ta), 112.5W (Tc)
2.9mOhm @ 27A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-LFPAK
SOT-1205, 8-LFPAK56
BSC017N04NSGATMA1
Infineon Technologies

MOSFET N-CH 40V 30A/100A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
30A (Ta), 100A (Tc)
10V
4V @ 85µA
108 nC @ 10 V
8800 pF @ 20 V
±20V
-
2.5W (Ta), 139W (Tc)
1.7mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
RJ1P07CBHTL1
Rohm Semiconductor

NCH 100V 70A, TO-263AB, POWER M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고2,400
MOSFET (Metal Oxide)
100 V
70A (Tc)
6V, 10V
4V @ 1mA
73 nC @ 10 V
4650 pF @ 50 V
±20V
-
135W (Tc)
5.1mOhm @ 70A, 10V
150°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB