이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 140A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고641,676 |
|
MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 50nC @ 4.5V | 4010pF @ 15V | ±20V | - | 140W (Tc) | 4.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 18A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고55,932 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V | 1V @ 250µA | 60nC @ 5V | 5500pF @ 16V | ±12V | - | 3.1W (Ta) | 6.5 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V 30A TO-251
|
패키지: TO-251-3 Short Leads, IPak, TO-251AA |
재고2,480 |
|
MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | ±20V | - | 83W (Tc) | 6.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | P-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 30V 90A TO-262
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고2,016 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | ±20V | - | 3.1W (Ta), 120W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 100V 32A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고4,336 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.6A TO92-3
|
패키지: E-Line-3 |
재고22,560 |
|
MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 3V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 1 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 14.5A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고319,896 |
|
MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 118nC @ 10V | 4480pF @ 15V | ±25V | - | 2.5W (Ta) | 7.2 mOhm @ 14.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 75V 183A TO220
|
패키지: TO-220-3 |
재고4,096 |
|
MOSFET (Metal Oxide) | 75V | 183A (Tc) | 6V, 10V | 3.7V @ 250µA | 270nC @ 10V | 10150pF @ 25V | ±20V | - | 290W (Tc) | 3.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
패키지: 8-PowerTDFN, 5 Leads |
재고3,312 |
|
MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 3.5V @ 250µA | 65nC @ 10V | 4300pF @ 25V | ±20V | - | 3.8W (Ta), 128W (Tc) | 1.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Renesas Electronics America |
MOSFET N-CH 60V 100A TO-262
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고5,392 |
|
MOSFET (Metal Oxide) | 60V | 100A (Ta) | 10V | - | 133nC @ 10V | 7730pF @ 25V | ±20V | - | 1.5W (Ta), 156W (Tc) | 4.6 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Texas Instruments |
30V N CH MOSFET
|
패키지: 8-PowerTDFN |
재고6,096 |
|
MOSFET (Metal Oxide) | 30V | 24A (Ta), 123A (Tc) | 4.5V, 10V | 1.7V @ 250µA | 54nC @ 10V | 3640pF @ 15V | ±20V | - | 3.1W (Ta), 83W (Tc) | 3.4 mOhm @ 16A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 4.9A CHIPFET
|
패키지: 8-SMD, Flat Lead |
재고8,652 |
|
MOSFET (Metal Oxide) | 30V | 4.9A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 18nC @ 10V | 900pF @ 15V | ±20V | - | 800mW (Ta) | 22 mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET? | 8-SMD, Flat Lead |
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IXYS |
MOSFET N-CH 300V 94A TO-3P
|
패키지: TO-3P-3, SC-65-3 |
재고5,408 |
|
MOSFET (Metal Oxide) | 300V | 94A (Tc) | 10V | 5V @ 4mA | 102nC @ 10V | 5510pF @ 25V | ±20V | - | 1040W (Tc) | 36 mOhm @ 47A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 1.8A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고22,260 |
|
MOSFET (Metal Oxide) | 200V | 1.8A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | ±20V | - | 3W (Ta), 20W (Tc) | 3 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 500V 6.3A TO-220FP
|
패키지: TO-220-3 Full Pack |
재고7,472 |
|
MOSFET (Metal Oxide) | 500V | 6.3A (Tc) | 13V | 3.5V @ 260µA | 24.8nC @ 10V | 584pF @ 100V | ±20V | - | 29.2W (Tc) | 380 mOhm @ 3.2A, 13V | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 13A
|
패키지: 8-PowerVDFN |
재고5,552 |
|
MOSFET (Metal Oxide) | 100V | 13A (Ta), 72A (Tc) | 6V, 10V | 4V @ 250µA | 83nC @ 10V | 5875pF @ 75V | ±20V | - | 3.2W (Ta), 113W (Tc) | 9 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-Dual Cool?88 | 8-PowerVDFN |
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Texas Instruments |
MOSFET N-CH 80V 200A DDPAK-3
|
패키지: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
재고2,144 |
|
MOSFET (Metal Oxide) | 80V | 200A (Ta) | 6V, 10V | 3.2V @ 250µA | 76nC @ 10V | 7920pF @ 40V | ±20V | - | 300W (Tc) | 3.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
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Nexperia USA Inc. |
MOSFET N-CH 40V 75A TO220AB
|
패키지: TO-220-5 |
재고33,804 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 84nC @ 10V | 3140pF @ 25V | ±20V | Current Sensing | 221W (Tc) | 8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB
|
패키지: TO-220-3 |
재고48,912 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2400pF @ 25V | ±20V | - | 190W (Tc) | 18 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 63A 8SOP
|
패키지: 8-PowerVDFN |
재고36,648 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | ±20V | - | 1.6W (Ta), 36W (Tc) | 4 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 30A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고46,572 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 95nC @ 10V | 3545pF @ 15V | ±20V | - | 3W (Ta), 6W (Tc) | 3.2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 100V 2.6A SOT223
|
패키지: TO-261-4, TO-261AA |
재고370,848 |
|
MOSFET (Metal Oxide) | 100V | 2.6A (Ta) | 6V, 10V | 4V @ 250µA | 26.9nC @ 10V | 1055pF @ 50V | ±20V | - | 2W (Ta) | 150 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diotec Semiconductor |
IC
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 145A (Tc) | 10V | 4V @ 250µA | 115 nC @ 10 V | 7000 pF @ 20 V | ±20V | - | 75W (Tc) | 1.5mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-QFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 18A/40A TSDSON
|
패키지: - |
재고8,988 |
|
MOSFET (Metal Oxide) | 60 V | 18A (Ta), 40A (Tc) | 6V, 10V | 3.3V @ 36µA | 34 nC @ 10 V | 2500 pF @ 30 V | ±20V | - | 2.1W (Ta), 69W (Tc) | 3.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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onsemi |
MOSFET N-CH 40V 79.8A/558A 8DFNW
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 79.8A (Ta), 558A (Tc) | 10V | 4V @ 250µA | 251 nC @ 10 V | 16500 pF @ 20 V | ±20V | - | 5W | 0.45mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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Infineon Technologies |
IC DISCRETE
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
EPC |
GANFET N-CH 100V 16A DIE
|
패키지: - |
재고155,760 |
|
GaNFET (Gallium Nitride) | 100 V | 16A (Ta) | 5V | 2.5V @ 5mA | 6.5 nC @ 5 V | 685 pF @ 50 V | +6V, -4V | - | - | 7mOhm @ 16A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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onsemi |
MOSFET N-CH 80V 80A POWER56
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 10V | 4V @ 250µA | 75 nC @ 10 V | 4350 pF @ 40 V | ±20V | - | 214W (Tc) | 4.5mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerVDFN |