페이지 117 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 887
Language Translation

* Please refer to the English Version as our Official Version.

트랜지스터 - IGBT - 모듈

기록 3,436
페이지  117/123
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG5K75HF06A
Infineon Technologies

MOD IGBT 600V 75A POWIR 34

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Power - Max: 330W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 34 Module
  • Supplier Device Package: POWIR? 34
패키지: POWIR? 34 Module
재고2,016
Half Bridge
600V
140A
330W
2.1V @ 15V, 75A
1mA
3.6nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR? 34 Module
POWIR? 34
FF1200R17KE3B2NOSA1
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1700V 1200A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,552
-
-
-
-
-
-
-
-
-
-
-
-
-
CM1400DU-24NF
Powerex Inc.

IGBT MOD DUAL 1200V 1400A MEGA

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 1400A
  • Power - Max: 3900W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 1400A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 220nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,864
Half Bridge
1200V
1400A
3900W
2.5V @ 15V, 1400A
1mA
220nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APTGT100DDA60T3G
Microsemi Corporation

IGBT MOD TRENCH BOOST CHOP SP3

  • IGBT Type: Trench Field Stop
  • Configuration: Dual Boost Chopper
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 340W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 6.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고6,608
Dual Boost Chopper
600V
150A
340W
1.9V @ 15V, 100A
250µA
6.1nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP3
SP3
APTGF90SK60D1G
Microsemi Corporation

IGBT 600V 130A 445W D1

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 130A
  • Power - Max: 445W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
패키지: D1
재고7,632
Single
600V
130A
445W
2.45V @ 15V, 100A
500µA
4.3nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D1
D1
FD900R12IP4D
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 900A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,584
-
-
-
-
-
-
-
-
-
-
-
-
-
hot FS200R12PT4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 200A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,384
-
-
-
-
-
-
-
-
-
-
-
-
-
FS150R12KT4_B11
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 650V 150A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,832
-
-
-
-
-
-
-
-
-
-
-
-
-
APTGT200A170D3G
Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D3

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 17nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3
패키지: D-3 Module
재고7,824
Half Bridge
1700V
400A
1250W
2.4V @ 15V, 200A
5mA
17nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D-3 Module
D3
APTGT150A120TG
Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG SP4

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 220A
  • Power - Max: 690W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 10.7nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
패키지: SP4
재고7,264
Half Bridge
1200V
220A
690W
2.1V @ 15V, 150A
250µA
10.7nF @ 25V
Standard
Yes
-
Chassis Mount
SP4
SP4
MUBW25-12A7
IXYS

CONVERTER/BRAKE/INVERTER 2.9VCE

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Power - Max: 225W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 25A
  • Current - Collector Cutoff (Max): 900µA
  • Input Capacitance (Cies) @ Vce: 1.65nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
패키지: E2
재고3,984
Three Phase Inverter with Brake
1200V
50A
225W
2.7V @ 15V, 25A
900µA
1.65nF @ 25V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
E2
E2
F3L100R07W2E3_B11
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 200A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,096
-
-
-
-
-
-
-
-
-
-
-
-
-
FB30R06W1E3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 30A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,240
-
-
-
-
-
-
-
-
-
-
-
-
-
VS-GB75LA60UF
Vishay Semiconductor Diodes Division

IGBT 600V 70A LS CHOPPER SOT-227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 109A
  • Power - Max: 447W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고6,576
Single
600V
109A
447W
2V @ 15V, 35A
50µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
MG12400D-BN2MM
Littelfuse Inc.

IGBT 1200V 580A 1925W PKG D

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 580A
  • Power - Max: 1925W
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 400A (Typ)
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 28nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: D3
패키지: Module
재고7,248
Half Bridge
1200V
580A
1925W
1.7V @ 15V, 400A (Typ)
2mA
28nF @ 25V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
D3
hot FZ800R12KE3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 800A

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 800A
  • Power - Max: 3550W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 800A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 56nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,192
Single
1200V
800A
3550W
2.15V @ 15V, 800A
5mA
56nF @ 25V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
FS75R12KE3BOSA1
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 75A

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 105A
  • Power - Max: 350W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고5,104
Three Phase Inverter
1200V
105A
350W
2.15V @ 15V, 75A
5mA
5.3nF @ 25V
Standard
Yes
150°C (TJ)
Chassis Mount
Module
Module
hot APT75GT120JRDQ3
Microsemi Corporation

IGBT 1200V 97A 480W SOT227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 97A
  • Power - Max: 480W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
  • Current - Collector Cutoff (Max): 200µA
  • Input Capacitance (Cies) @ Vce: 5.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: ISOTOP?
패키지: SOT-227-4, miniBLOC
재고14,868
Single
1200V
97A
480W
3.7V @ 15V, 75A
200µA
5.1nF @ 25V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
ISOTOP?
hot APT75GT120JU2
Microsemi Corporation

IGBT 1200V 100A 416W SOT227

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
패키지: ISOTOP
재고12,564
Single
1200V
100A
416W
2.1V @ 15V, 75A
5mA
5.34nF @ 25V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP
SOT-227
FZ400R12KP4HOSA1
Infineon Technologies

IGBT MOD 1200V 400A 2400W

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 400 A
  • Power - Max: 2400 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고27
Single
1200 V
400 A
2400 W
2.05V @ 15V, 400A
5 mA
28 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
FF225R65T3E3P2BPSA1
Infineon Technologies

IHV IHM T XHP 3 3-6 5K AG-XHP3K6

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 5900 V
  • Current - Collector (Ic) (Max): 225 A
  • Power - Max: 1000 W
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-XHP3K65
패키지: -
Request a Quote
2 Independent
5900 V
225 A
1000 W
3.4V @ 15V, 225A
5 mA
65.6 nF @ 25 V
Standard
No
125°C (TJ)
Chassis Mount
Module
AG-XHP3K65
NVG800A75L4DSC2
onsemi

IC PWR MOD 750V 800A AHPM15

  • IGBT Type: -
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 550 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 43000 pF @ 30 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
  • Supplier Device Package: AHPM15-CEA
패키지: -
Request a Quote
Half Bridge Inverter
750 V
550 A
-
1.6V @ 15V, 600A
1 mA
43000 pF @ 30 V
Standard
No
-40°C ~ 175°C (TJ)
Through Hole
15-PowerDIP Module (2.441", 62.00mm)
AHPM15-CEA
F3L200R07W2S5FPB56BPSA1
Infineon Technologies

LOW POWER EASY AG-EASY2B-2

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고36
-
-
-
-
-
-
-
-
-
-
-
-
-
FF600R07ME4B11BOSA1
Infineon Technologies

IGBT MOD 650V 700A 1800W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 700 A
  • Power - Max: 1800 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
650 V
700 A
1800 W
1.95V @ 15V, 600A
1 mA
37 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FS300R12KE3BOSA1
Infineon Technologies

IGBT MOD 1200V 500A 1450W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 500 A
  • Power - Max: 1450 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고39
Three Phase Inverter
1200 V
500 A
1450 W
2.15V @ 15V, 300A
5 mA
21 nF @ 25 V
Standard
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
BSM50GD120DN2BOSA1
Infineon Technologies

IGBT MOD 1200V 72A 350W

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 72 A
  • Power - Max: 350 W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge
1200 V
72 A
350 W
3V @ 15V, 50A
1 mA
3.3 nF @ 25 V
Standard
No
150°C (TJ)
Chassis Mount
Module
Module
FF600R12ME4B11BPSA1
Infineon Technologies

IGBT MODULE 1200V 4050W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 4050 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1200 V
-
4050 W
2.1V @ 15V, 600A
3 mA
37 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF200R12KE4PHOSA1
Infineon Technologies

IGBT MODULE 1200V 200A

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge
1200 V
200 A
-
2.15V @ 15V, 200A
5 mA
14 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module