페이지 13 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  13/123
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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG5U100HF12A
Infineon Technologies

MOD IGBT 1200V 100A POWIR 34

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 620W
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 34 Module
  • Supplier Device Package: POWIR? 34
패키지: POWIR? 34 Module
재고3,952
Half Bridge
1200V
200A
620W
3.5V @ 15V, 100A
1mA
12.3nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR? 34 Module
POWIR? 34
IRG5K100HF12A
Infineon Technologies

MOD IGBT 1200V 100A POWIR 34

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 620W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 12.9nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 34 Module
  • Supplier Device Package: POWIR? 34
패키지: POWIR? 34 Module
재고5,392
Half Bridge
1200V
200A
620W
2.6V @ 15V, 100A
1mA
12.9nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR? 34 Module
POWIR? 34
FZ1200R12KF4NOSA1
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 1200A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,640
-
-
-
-
-
-
-
-
-
-
-
-
-
STGE50NB60HD
STMicroelectronics

IGBT N-CHAN 600V 50A ISOTOP

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 300W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP
패키지: ISOTOP
재고7,824
Single
600V
100A
300W
2.8V @ 15V, 50A
250µA
4.5nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
ISOTOP
ISOTOP
FS215R04A1E3DBOMA1
Infineon Technologies

IGBT MODULES

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,544
-
-
-
-
-
-
-
-
-
-
-
-
-
FF600R12ME4CP
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 600A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,296
-
-
-
-
-
-
-
-
-
-
-
-
-
MG17200D-BN4MM
Littelfuse Inc.

IGBT MOD 1700V 200A PKG D CRCT:B

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 300A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: 18nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3
패키지: D-3 Module
재고2,080
Half Bridge
1700V
300A
1250W
2.45V @ 15V, 200A
3mA
18nF @ 25V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
D-3 Module
D3
MUBW100-06A8
IXYS

MODULE IGBT CBI E3

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 125A
  • Power - Max: 410W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1.4mA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
패키지: E3
재고5,920
Three Phase Inverter with Brake
600V
125A
410W
2.5V @ 15V, 100A
1.4mA
4.3nF @ 25V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
E3
E3
VS-GB150TS60NPBF
Vishay Semiconductor Diodes Division

IGBT 600V 138A 500W INT-A-PAK

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 138A
  • Power - Max: 500W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A
  • Current - Collector Cutoff (Max): 200µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
패키지: INT-A-PAK (3 + 4)
재고3,440
Half Bridge
600V
138A
500W
3V @ 15V, 150A
200µA
-
Standard
No
150°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
APTGL90DA120T1G
Microsemi Corporation

MOD IGBT 1200V 110A SP1

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 385W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고2,100
Single
1200V
110A
385W
2.25V @ 15V, 75A
250µA
4.4nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
APT60GA60JD60
Microsemi Corporation

IGBT 600V 112A 356W SOT-227

  • IGBT Type: PT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 112A
  • Power - Max: 356W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
  • Current - Collector Cutoff (Max): 275µA
  • Input Capacitance (Cies) @ Vce: 8.01nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: ISOTOP?
패키지: SOT-227-4, miniBLOC
재고5,520
Single
600V
112A
356W
2.5V @ 15V, 62A
275µA
8.01nF @ 25V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
ISOTOP?
APTGT300A170G
Microsemi Corporation

IGBT PHASE TRENCH FIELD STOP SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 1660W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
  • Current - Collector Cutoff (Max): 750µA
  • Input Capacitance (Cies) @ Vce: 26.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고5,216
Half Bridge
1700V
400A
1660W
2.4V @ 15V, 300A
750µA
26.5nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APT150GT120JR
Microsemi Corporation

IGBT 1200V 170A 830W SOT227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 170A
  • Power - Max: 830W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
  • Current - Collector Cutoff (Max): 150µA
  • Input Capacitance (Cies) @ Vce: 9.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP?
패키지: ISOTOP
재고4,880
Single
1200V
170A
830W
3.7V @ 15V, 150A
150µA
9.3nF @ 25V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP
ISOTOP?
FP75R12N2T4B11BPSA1
Infineon Technologies

IGBT MODULE LOW POWER ECONO

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
BSM200GA120DLCSHOSA1
Infineon Technologies

IGBT MOD 1200V 370A 1450W

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 370 A
  • Power - Max: 1450 W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
1200 V
370 A
1450 W
2.6V @ 15V, 200A
5 mA
13 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
FP15R12W1T4PB11BPSA1
Infineon Technologies

IGBT MOD 1200V 30A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
1200 V
30 A
20 mW
2.25V @ 15V, 15A
1 mA
890 pF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF300R12KT3PEHOSA1
Infineon Technologies

IGBT MODULE 1200V 300A

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 300 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge Inverter
1200 V
300 A
-
2.15V @ 15V, 300A
5 mA
21 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
FP50R06KE3BOSA1
Infineon Technologies

IGBT MODULE 600V 60A 190W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Power - Max: 190 W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
600 V
60 A
190 W
1.9V @ 15V, 50A
1 mA
3.1 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FZ1600R33HE4BPSA1
Infineon Technologies

IHV IHM T XHP 3 3-6 5K AG-IHVB13

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 3300 V
  • Current - Collector (Ic) (Max): 1600 A
  • Power - Max: 3600 W
  • Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 1.6kA
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHVB130-3
패키지: -
재고6
2 Independent
3300 V
1600 A
3600 W
2.65V @ 15V, 1.6kA
5 mA
187 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-IHVB130-3
FS100R12KT4BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 515 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO3
패키지: -
Request a Quote
Full Bridge Inverter
1200 V
100 A
515 W
2.1V @ 15V, 100A
1 mA
6.3 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONO3
BSM25GP120BOSA1
Infineon Technologies

IGBT MOD 1200V 45A 230W

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 45 A
  • Power - Max: 230 W
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
  • Current - Collector Cutoff (Max): 20 A
  • Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge
1200 V
45 A
230 W
2.55V @ 15V, 25A
20 A
1.5 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
FZ1600R12KF4S1NOSA1
Infineon Technologies

IGBT MODULE 1200V AIHM130-2

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
A1P50S65M2-F
STMicroelectronics

IGBT MOD 650V 50A 208W ACEPACK1

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 208 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Current - Collector Cutoff (Max): 100 µA
  • Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: ACEPACK™ 1
패키지: -
Request a Quote
Three Phase Inverter
650 V
50 A
208 W
2.3V @ 15V, 50A
100 µA
4.15 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
ACEPACK™ 1
FP40R12KT3BPSA1
Infineon Technologies

LOW POWER ECONO

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 55 A
  • Power - Max: 105 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2-8
패키지: -
재고51
Three Phase Inverter
1200 V
55 A
105 W
2.3V @ 15V, 40A
5 mA
2.5 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
Module
AG-ECONO2-8
FS15R06VE3B2BOMA1
Infineon Technologies

IGBT MODULE 600V 22A 65W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 22 A
  • Power - Max: 65 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 830 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
600 V
22 A
65 W
2V @ 15V, 15A
1 mA
830 pF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF900R12IE4VBOSA1
Infineon Technologies

IGBT MOD 1200V 900A 5100W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 5100 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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2 Independent
1200 V
900 A
5100 W
2.05V @ 15V, 900A
5 mA
54 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
NXH100B120H3Q0PTG
onsemi

IGBT MODULE 1200V 50A 186W 22PIM

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 186 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Current - Collector Cutoff (Max): 200 µA
  • Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 22-PIM (55x32.5)
패키지: -
재고66
2 Independent
1200 V
50 A
186 W
2.3V @ 15V, 50A
200 µA
9.075 nF @ 20 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
22-PIM (55x32.5)
FF400R17KE4EHOSA1
Infineon Technologies

IGBT MODULE 1700V 400A

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 400 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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Half Bridge
1700 V
400 A
-
2.3V @ 15V, 400A
1 mA
36 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module