페이지 14 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7U200HF12B	Infineon Technologies	MOD IGBT 1200V 200A POWIR 62 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 400A Power - Max: 1130W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 20nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 62 Module Supplier Device Package: POWIR? 62	패키지: POWIR? 62 Module	재고7,248	Half Bridge	1200V	400A	1130W	2V @ 15V, 200A	2mA	20nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	POWIR? 62 Module	POWIR? 62
FZ1200R12KF5NDSA1	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE 1200V 1200A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,504	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGT100A60TG	Microsemi Corporation	IGBT MODULE TRENCH PH LEG SP4 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 150A Power - Max: 340W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 6.1nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고6,080	Half Bridge	600V	150A	340W	1.9V @ 15V, 100A	250µA	6.1nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP4	SP4
APTGT100A120D1G	Microsemi Corporation	IGBT MODULE TRENCH PHASE LEG D1 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Power - Max: 520W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 7nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고3,840	Half Bridge	1200V	150A	520W	2.1V @ 15V, 100A	3mA	7nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
6MS30017E43W38169	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE 690V 1800A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,616	-	-	-	-	-	-	-	-	-	-	-	-	-
FF800R17KE3	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 1200V 800A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,392	-	-	-	-	-	-	-	-	-	-	-	-	-
CM200DY-24NF	Powerex Inc.	IGBT MOD DUAL 1200V 200A NF SER IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 1130W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 47nF @ 10V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고3,552	Half Bridge	1200V	200A	1130W	2.5V @ 15V, 200A	1mA	47nF @ 10V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
APTGT300DA60G	Microsemi Corporation	IGBT 600V 430A 1150W SP6 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 430A Power - Max: 1150W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A Current - Collector Cutoff (Max): 350µA Input Capacitance (Cies) @ Vce: 24nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고6,352	Single	600V	430A	1150W	1.8V @ 15V, 300A	350µA	24nF @ 25V	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount	SP6	SP6
DF160R12W2H3_B11	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 1200V 150A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,144	-	-	-	-	-	-	-	-	-	-	-	-	-
VS-70MT060WHTAPBF	Vishay Semiconductor Diodes Division	IGBT 600V 100A 347W MTP IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Power - Max: 347W Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A Current - Collector Cutoff (Max): 700µA Input Capacitance (Cies) @ Vce: 8nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: MTP	패키지: 12-MTP Module	재고4,000	Half Bridge	600V	100A	347W	3.4V @ 15V, 140A	700µA	8nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	12-MTP Module	MTP
DF150R12RT4	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 1200V 150A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,608	-	-	-	-	-	-	-	-	-	-	-	-	-
FP15R12KT3	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 600V 22A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,288	-	-	-	-	-	-	-	-	-	-	-	-	-
VS-ETF150Y65U	Vishay Semiconductor Diodes Division	IGBT 650V 150A EMIPAK-2B IGBT Type: Trench Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 142A Power - Max: 417W Vce(on) (Max) @ Vge, Ic: 2.06V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 6.6nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: EMIPAK-2B Supplier Device Package: EMIPAK-2B	패키지: EMIPAK-2B	재고4,816	Three Level Inverter	650V	142A	417W	2.06V @ 15V, 100A	100µA	6.6nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	EMIPAK-2B	EMIPAK-2B
APT75GN120JDQ3	Microsemi Corporation	IGBT 1200V 124A 379W SOT227 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 124A Power - Max: 379W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Current - Collector Cutoff (Max): 200µA Input Capacitance (Cies) @ Vce: 4.8nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Supplier Device Package: ISOTOP?	패키지: ISOTOP	재고6,528	Single	1200V	124A	379W	2.1V @ 15V, 75A	200µA	4.8nF @ 25V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP	ISOTOP?
BSM15GD120DN2BOSA1	Infineon Technologies	IGBT MOD 1200V 25A 145W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 25 A Power - Max: 145 W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 100 pF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	1200 V	25 A	145 W	3V @ 15V, 15A	500 µA	100 pF @ 25 V	Standard	No	150°C (TJ)	Chassis Mount	Module	Module
FF450R12ME4B11BPSA2	Infineon Technologies	MEDIUM POWER ECONO AG-ECONOD-411 IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 675 A Power - Max: 2250 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONOD	패키지: -	Request a Quote	2 Independent	1200 V	675 A	2250 W	2.1V @ 15V, 450A	3 mA	28 nF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-ECONOD
FS20R06VE3BOMA1	Infineon Technologies	IGBT MOD 600V 25A 71.5W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 25 A Power - Max: 71.5 W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	600 V	25 A	71.5 W	2V @ 15V, 20A	1 mA	1.1 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
FP10R12W1T4B11BOMA1	Infineon Technologies	IGBT MOD 1200V 20A 105W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 20 A Power - Max: 105 W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 600 pF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고36	Three Phase Inverter	1200 V	20 A	105 W	2.25V @ 15V, 10A	1 mA	600 pF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
A2C35S12M3-F	STMicroelectronics	IGBT MOD 1200V 35A 250W ACEPACK2 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 35 A Power - Max: 250 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 35A Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.154 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: ACEPACK™ 2	패키지: -	Request a Quote	Three Phase Inverter with Brake	1200 V	35 A	250 W	2.45V @ 15V, 35A	100 µA	2.154 nF @ 25 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	ACEPACK™ 2
F4250R07W2H5FB11BPSA1	Infineon Technologies	LOW POWER EASY IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고45	-	-	-	-	-	-	-	-	-	-	-	-	-
FZ1200R33KF2CB3S2NDSA1	Infineon Technologies	IGBT MODULE 3300V 2000A IGBT Type: - Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 3300 V Current - Collector (Ic) (Max): 2000 A Power - Max: 14500 W Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA Current - Collector Cutoff (Max): 12 mA Input Capacitance (Cies) @ Vce: 150 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	Full Bridge	3300 V	2000 A	14500 W	4.25V @ 15V, 1.2kA	12 mA	150 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	-
FS100R12KT4GPB11BPSA1	Infineon Technologies	MOD IGBT LOW PWR ECONO3-4 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FS200T12A1T4BOMA1	Infineon Technologies	MODULE IGBT HYBRID PK IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
BSM50GD120DLCBPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2A-211 IGBT Type: - Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 85 A Power - Max: 350 W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Current - Collector Cutoff (Max): 84 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2A	패키지: -	Request a Quote	Full Bridge Inverter	1200 V	85 A	350 W	2.6V @ 15V, 50A	84 µA	3.3 nF @ 25 V	Standard	No	150°C (TJ)	Chassis Mount	Module	AG-ECONO2A
FZ2400R12HP4PHPSA1	Infineon Technologies	IGBT MOD 1200V 3460A AGIHMB130-2 IGBT Type: Trench Configuration: Single Switch Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 3460 A Power - Max: 12500 W Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-IHMB130-2	패키지: -	Request a Quote	Single Switch	1200 V	3460 A	12500 W	2.05V @ 15V, 2.4kA	5 mA	-	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	AG-IHMB130-2
APTGLQ25H120T1G	Microchip Technology	IGBT MODULE 1200V 50A 165W SP1 IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Power - Max: 165 W Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 25A Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 1.43 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP1	패키지: -	재고30	Full Bridge	1200 V	50 A	165 W	2.42V @ 15V, 25A	50 µA	1.43 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP1
F4150R17ME4B11BPSA1	Infineon Technologies	IGBT MODULE 1700V 230A IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 230 A Power - Max: - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 12 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Full Bridge	1700 V	230 A	-	2.3V @ 15V, 150A	3 mA	12 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
FD150R12RT4HOSA1	Infineon Technologies	IGBT MOD 1200V 150A 790W IGBT Type: Trench Field Stop Configuration: Single Chopper Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: 790 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single Chopper	1200 V	150 A	790 W	2.15V @ 15V, 150A	1 mA	9.3 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module

IRG7U200HF12B

Infineon Technologies

MOD IGBT 1200V 200A POWIR 62

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 400A
Power - Max: 1130W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 20nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 62 Module
Supplier Device Package: POWIR? 62

패키지: POWIR? 62 Module

재고7,248

Half Bridge

1200V

400A

1130W

2V @ 15V, 200A

2mA

20nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

POWIR? 62 Module

POWIR? 62

FZ1200R12KF5NDSA1

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 1200A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,504

-

APTGT100A60TG

Microsemi Corporation

IGBT MODULE TRENCH PH LEG SP4

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 150A
Power - Max: 340W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 6.1nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고6,080

Half Bridge

600V

150A

340W

1.9V @ 15V, 100A

250µA

6.1nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP4

APTGT100A120D1G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D1

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 520W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 7nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고3,840

Half Bridge

1200V

150A

520W

2.1V @ 15V, 100A

3mA

7nF @ 25V

Standard

No

-

Chassis Mount

D1

6MS30017E43W38169

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 690V 1800A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,616

-

FF800R17KE3

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 800A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,392

-

CM200DY-24NF

Powerex Inc.

IGBT MOD DUAL 1200V 200A NF SER

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 1130W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 47nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고3,552

Half Bridge

1200V

200A

1130W

2.5V @ 15V, 200A

1mA

47nF @ 10V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

APTGT300DA60G

Microsemi Corporation

IGBT 600V 430A 1150W SP6

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 430A
Power - Max: 1150W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A
Current - Collector Cutoff (Max): 350µA
Input Capacitance (Cies) @ Vce: 24nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고6,352

Single

600V

430A

1150W

1.8V @ 15V, 300A

350µA

24nF @ 25V

Standard

No

-40°C ~ 175°C (TJ)

Chassis Mount

SP6

DF160R12W2H3_B11

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 150A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,144

-

VS-70MT060WHTAPBF

Vishay Semiconductor Diodes Division

IGBT 600V 100A 347W MTP

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Power - Max: 347W
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
Current - Collector Cutoff (Max): 700µA
Input Capacitance (Cies) @ Vce: 8nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Supplier Device Package: MTP

패키지: 12-MTP Module

재고4,000

Half Bridge

600V

100A

347W

3.4V @ 15V, 140A

700µA

8nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

12-MTP Module

MTP

DF150R12RT4

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 150A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,608

-

FP15R12KT3

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 22A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,288

-

VS-ETF150Y65U

Vishay Semiconductor Diodes Division

IGBT 650V 150A EMIPAK-2B

IGBT Type: Trench
Configuration: Three Level Inverter
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 142A
Power - Max: 417W
Vce(on) (Max) @ Vge, Ic: 2.06V @ 15V, 100A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 6.6nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: EMIPAK-2B
Supplier Device Package: EMIPAK-2B

패키지: EMIPAK-2B

재고4,816

Three Level Inverter

650V

142A

417W

2.06V @ 15V, 100A

100µA

6.6nF @ 30V

Standard

No

175°C (TJ)

Chassis Mount

EMIPAK-2B

APT75GN120JDQ3

Microsemi Corporation

IGBT 1200V 124A 379W SOT227

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 124A
Power - Max: 379W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Current - Collector Cutoff (Max): 200µA
Input Capacitance (Cies) @ Vce: 4.8nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP?

패키지: ISOTOP

재고6,528

Single

1200V

124A

379W

2.1V @ 15V, 75A

200µA

4.8nF @ 25V

Standard

No

-55°C ~ 150°C (TJ)

Chassis Mount

ISOTOP

ISOTOP?

BSM15GD120DN2BOSA1

Infineon Technologies

IGBT MOD 1200V 25A 145W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Power - Max: 145 W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

1200 V

25 A

145 W

3V @ 15V, 15A

500 µA

100 pF @ 25 V

Standard

No

150°C (TJ)

Chassis Mount

Module

FF450R12ME4B11BPSA2

Infineon Technologies

MEDIUM POWER ECONO AG-ECONOD-411

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 675 A
Power - Max: 2250 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONOD

패키지: -

Request a Quote

2 Independent

1200 V

675 A

2250 W

2.1V @ 15V, 450A

3 mA

28 nF @ 25 V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-ECONOD

FS20R06VE3BOMA1

Infineon Technologies

IGBT MOD 600V 25A 71.5W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 25 A
Power - Max: 71.5 W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

600 V

25 A

71.5 W

2V @ 15V, 20A

1 mA

1.1 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

FP10R12W1T4B11BOMA1

Infineon Technologies

IGBT MOD 1200V 20A 105W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 20 A
Power - Max: 105 W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고36

Three Phase Inverter

1200 V

20 A

105 W

2.25V @ 15V, 10A

1 mA

600 pF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

A2C35S12M3-F

STMicroelectronics

IGBT MOD 1200V 35A 250W ACEPACK2

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 35 A
Power - Max: 250 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 35A
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.154 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: ACEPACK™ 2

패키지: -

Request a Quote

Three Phase Inverter with Brake

1200 V

35 A

250 W

2.45V @ 15V, 35A

100 µA

2.154 nF @ 25 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

ACEPACK™ 2

F4250R07W2H5FB11BPSA1

Infineon Technologies

LOW POWER EASY

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고45

-

FZ1200R33KF2CB3S2NDSA1

Infineon Technologies

IGBT MODULE 3300V 2000A

IGBT Type: -
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 2000 A
Power - Max: 14500 W
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA
Current - Collector Cutoff (Max): 12 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

Full Bridge

3300 V

2000 A

14500 W

4.25V @ 15V, 1.2kA

12 mA

150 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

-

FS100R12KT4GPB11BPSA1

Infineon Technologies

MOD IGBT LOW PWR ECONO3-4

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FS200T12A1T4BOMA1

Infineon Technologies

MODULE IGBT HYBRID PK

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BSM50GD120DLCBPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2A-211

IGBT Type: -
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 85 A
Power - Max: 350 W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2A

패키지: -

Request a Quote

Full Bridge Inverter

1200 V

85 A

350 W

2.6V @ 15V, 50A

84 µA

3.3 nF @ 25 V

Standard

No

150°C (TJ)

Chassis Mount

Module

AG-ECONO2A

FZ2400R12HP4PHPSA1

Infineon Technologies

IGBT MOD 1200V 3460A AGIHMB130-2

IGBT Type: Trench
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3460 A
Power - Max: 12500 W
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-IHMB130-2

패키지: -

Request a Quote

Single Switch

1200 V

3460 A

12500 W

2.05V @ 15V, 2.4kA

5 mA

-

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

AG-IHMB130-2

APTGLQ25H120T1G

Microchip Technology

IGBT MODULE 1200V 50A 165W SP1

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Power - Max: 165 W
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 25A
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 1.43 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP1

패키지: -

재고30

Full Bridge

1200 V

50 A

165 W

2.42V @ 15V, 25A

50 µA

1.43 nF @ 25 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP1

F4150R17ME4B11BPSA1

Infineon Technologies

IGBT MODULE 1700V 230A

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 230 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Full Bridge

1700 V

230 A

-

2.3V @ 15V, 150A

3 mA

12 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

FD150R12RT4HOSA1

Infineon Technologies

IGBT MOD 1200V 150A 790W

IGBT Type: Trench Field Stop
Configuration: Single Chopper
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 790 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single Chopper

1200 V

150 A

790 W

2.15V @ 15V, 150A

1 mA

9.3 nF @ 25 V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module