페이지 3 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  3/123
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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APTGF50DDA120T3G
Microsemi Corporation

IGBT MOD NPT 1200V 50A SP3

  • IGBT Type: NPT
  • Configuration: Dual Boost Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Power - Max: 312W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 3.45nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고3,536
Dual Boost Chopper
1200V
70A
312W
3.7V @ 15V, 50A
250µA
3.45nF @ 25V
Standard
Yes
-
Chassis Mount
SP3
SP3
CM75DU-12H
Powerex Inc.

IGBT MOD DUAL 600V 75A U SER

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Power - Max: 310W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 6.6nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,296
Half Bridge
600V
75A
310W
3V @ 15V, 75A
1mA
6.6nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
MUBW10-06A6
IXYS

MODULE IGBT CBI E1

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Power - Max: 45W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Current - Collector Cutoff (Max): 20µA
  • Input Capacitance (Cies) @ Vce: 0.435nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E1
  • Supplier Device Package: E1
패키지: E1
재고4,816
Three Phase Inverter with Brake
600V
11A
45W
2.5V @ 15V, 6A
20µA
0.435nF @ 25V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
E1
E1
6MS20017E43W37032
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 690V 1200A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,400
-
-
-
-
-
-
-
-
-
-
-
-
-
MWI225-17E9
IXYS

MOD IGBT SIXPACK E+

  • IGBT Type: NPT
  • Configuration: Three Phase
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 335A
  • Power - Max: 1400W
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 225A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 22nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E+
  • Supplier Device Package: E+
패키지: E+
재고2,336
Three Phase
1700V
335A
1400W
2.9V @ 15V, 225A
600µA
22nF @ 25V
Standard
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
E+
E+
FF600R17ME4P_B11
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 600A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,704
-
-
-
-
-
-
-
-
-
-
-
-
-
hot CM600HA-5F
Powerex Inc.

IGBT MOD SGL 250V 600A F SER

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Current - Collector (Ic) (Max): 600A
  • Power - Max: 960W
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 10V, 600A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 165nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,792
Single
250V
600A
960W
1.7V @ 10V, 600A
1mA
165nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
MWI100-12A8T
IXYS

IGBT SIXPACK 160A 1200V E3PACK

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 640W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
  • Current - Collector Cutoff (Max): 6.3mA
  • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
패키지: E3
재고6,352
Three Phase Inverter
1200V
160A
640W
2.6V @ 15V, 100A
6.3mA
6.5nF @ 25V
Standard
No
-
Chassis Mount
E3
E3
APTGT400SK120G
Microsemi Corporation

IGBT 1200V 560A 1785W SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 560A
  • Power - Max: 1785W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
  • Current - Collector Cutoff (Max): 750µA
  • Input Capacitance (Cies) @ Vce: 28nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고7,360
Single
1200V
560A
1785W
2.1V @ 15V, 400A
750µA
28nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
FF150R12MS4G
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 150A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,272
-
-
-
-
-
-
-
-
-
-
-
-
-
MKI50-12F7
IXYS

MOD IGBT H-BRIDGE 1200V 65A E2

  • IGBT Type: NPT
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 65A
  • Power - Max: 350W
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A
  • Current - Collector Cutoff (Max): 700µA
  • Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
패키지: E2
재고7,440
Full Bridge Inverter
1200V
65A
350W
3.8V @ 15V, 50A
700µA
3.3nF @ 25V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
E2
E2
MG1215H-XBN2MM
Littelfuse Inc.

IGBT MOD 1200V 15A PKG H CRCT:XB

  • IGBT Type: -
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 25A
  • Power - Max: 105W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고5,296
Three Phase Inverter with Brake
1200V
25A
105W
2.15V @ 15V, 15A
50µA
1.1nF @ 25V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
MG1750S-BN4MM
Littelfuse Inc.

IGBT MOD 1700V 50A PKG S CRCT:B

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 75A
  • Power - Max: 320W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: 4.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: S-3 Module
  • Supplier Device Package: S3
패키지: S-3 Module
재고6,112
Half Bridge
1700V
75A
320W
2.45V @ 15V, 50A
3mA
4.5nF @ 25V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
S-3 Module
S3
FP25R12KT4_B11
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 40A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,976
-
-
-
-
-
-
-
-
-
-
-
-
-
APTGF180H60G
Microsemi Corporation

POWER MOD IGBT NPT FULL BRDG SP6

  • IGBT Type: NPT
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 220A
  • Power - Max: 833W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
  • Current - Collector Cutoff (Max): 300µA
  • Input Capacitance (Cies) @ Vce: 8.6nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고6,624
Full Bridge Inverter
600V
220A
833W
2.5V @ 15V, 180A
300µA
8.6nF @ 25V
Standard
No
-
Chassis Mount
SP6
SP6
hot FZ600R17KE3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1700V 600A

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 840A
  • Power - Max: 3150W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: 54nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,880
Single
1700V
840A
3150W
2.45V @ 15V, 600A
3mA
54nF @ 25V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
DF650R17IE4BOSA1
Infineon Technologies

IGBT MOD 1700V 930A 4150W

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 930 A
  • Power - Max: 4150 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
1700 V
930 A
4150 W
2.45V @ 15V, 650A
5 mA
54 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
BSM20GP60BOSA1
Infineon Technologies

IGBT MODULE 600V 35A 130W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 35 A
  • Power - Max: 130 W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 10A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
600 V
35 A
130 W
2.35V @ 15V, 10A
500 µA
1.1 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
FZ600R12KE3HOSA1
Infineon Technologies

IGBT MOD 1200V 900A 2800W

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 2800 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 42 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
Single
1200 V
900 A
2800 W
2.15V @ 15V, 600A
5 mA
42 nF @ 25 V
Standard
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
FP10R12W1T7BOMA1
Infineon Technologies

LOW POWER EASY AG-EASY1B-1

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 10 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 4.5 µA
  • Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
패키지: -
재고69
Three Phase Inverter
1200 V
10 A
20 mW
-
4.5 µA
1.89 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY1B
FS300R12OE4PNOSA1
Infineon Technologies

IGBT MOD 1200V 600A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고24
Full Bridge
1200 V
600 A
20 mW
2.1V @ 15V, 300A
3 mA
18.5 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
F3L300R12PT4PB26BOSA1
Infineon Technologies

IGBT MODULE MED POWER ECONO4-1

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FS75R12KT3GBOSA1
Infineon Technologies

IGBT MOD 1200V 100A 355W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 355 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고12
Three Phase Inverter
1200 V
100 A
355 W
2.15V @ 15V, 75A
5 mA
5.3 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
FZ2400R12HP4B9HOSA2
Infineon Technologies

IGBT MODULE 1200V 3550A

  • IGBT Type: Trench
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 3550 A
  • Power - Max: 13500 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single Switch
1200 V
3550 A
13500 W
2.05V @ 15V, 2400A
5 mA
150 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
NXH50C120L2C2ES1G
onsemi

IGBT MOD 1200V 50A 26DIP

  • IGBT Type: -
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250 µA
  • Input Capacitance (Cies) @ Vce: 11.89 nF @ 20 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
  • Supplier Device Package: 26-DIP
패키지: -
Request a Quote
Three Phase Inverter with Brake
1200 V
50 A
20 mW
2.4V @ 15V, 50A
250 µA
11.89 nF @ 20 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Through Hole
26-PowerDIP Module (1.199", 47.20mm)
26-DIP
FP100R12N3T7B11BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO3B-711

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6
Three Phase Inverter
1200 V
100 A
-
-
-
-
Standard
No
-
-
-
-
FF1000R17IE4DPB2BOSA1
Infineon Technologies

IGBT MODULE 1700V 1000A

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 1000 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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2 Independent
1700 V
1000 A
-
2.45V @ 15V, 1000A
5 mA
81 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FMG1G400US60H
Fairchild Semiconductor

IGBT, 400A, 600V, N-CHANNEL

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 400 A
  • Power - Max: 1136 W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 400A
  • Current - Collector Cutoff (Max): 250 µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Single
600 V
400 A
1136 W
2.7V @ 15V, 400A
250 µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-