페이지 5 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CM75TU-12H	Powerex Inc.	IGBT MOD 6PAC 600V 75A U SER IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Power - Max: 310W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 6.6nF @ 10V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고7,216	Three Phase Inverter	600V	75A	310W	3V @ 15V, 75A	1mA	6.6nF @ 10V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FF401R17KF6C_B2	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 1700V 400A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,568	-	-	-	-	-	-	-	-	-	-	-	-	-
FF900R12IP4V	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 1200V 900A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,992	-	-	-	-	-	-	-	-	-	-	-	-	-
CM400DU-24F	Powerex Inc.	IGBT MOD DUAL 1200V 400A F SER IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 400A Power - Max: 1100W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 160nF @ 10V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고5,328	Half Bridge	1200V	400A	1100W	2.4V @ 15V, 400A	2mA	160nF @ 10V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FF600R17ME4_B11	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 600V 600A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,880	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGT600DU60G	Microsemi Corporation	IGBT MOD TRENCH DUAL SOURCE SP6 IGBT Type: Trench Field Stop Configuration: Dual, Common Source Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 700A Power - Max: 2300W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A Current - Collector Cutoff (Max): 750µA Input Capacitance (Cies) @ Vce: 49nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고5,440	Dual, Common Source	600V	700A	2300W	1.8V @ 15V, 600A	750µA	49nF @ 25V	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount	SP6	SP6
FF150R12ME3G	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 1200V 150A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,808	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGT150A60T3AG	Microsemi Corporation	MOD IGBT 600V 225A SP3 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 225A Power - Max: 600W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 9.2nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고2,848	Half Bridge	600V	225A	600W	1.9V @ 15V, 150A	250µA	9.2nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP3	SP3
APTGT50DH120T3G	Microsemi Corporation	MOD IGBT 1200V 75A SP3 IGBT Type: Trench Field Stop Configuration: Asymmetrical Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Power - Max: 277W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 3.6nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고6,128	Asymmetrical Bridge	1200V	75A	277W	2.1V @ 15V, 50A	250µA	3.6nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTGT300SK60D3G	Microsemi Corporation	IGBT BUCK CHOPPER 600V 400A D3 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 400A Power - Max: 940W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A Current - Collector Cutoff (Max): 500µA Input Capacitance (Cies) @ Vce: 18.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D-3 Module Supplier Device Package: D3	패키지: D-3 Module	재고6,320	Single	600V	400A	940W	1.9V @ 15V, 300A	500µA	18.5nF @ 25V	Standard	No	-	Chassis Mount	D-3 Module	D3
NVH660S75L4SPFB	onsemi	AUTOMOTIVE 750V, 660A SSDC POWER IGBT Type: Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector (Ic) (Max): 660 A Power - Max: 733 W Vce(on) (Max) @ Vge, Ic: 1.44V @ 15V, 450A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 63000 pF @ 30 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SSDC33	패키지: -	Request a Quote	Three Phase Inverter	750 V	660 A	733 W	1.44V @ 15V, 450A	500 µA	63000 pF @ 30 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SSDC33
FP50R12KS4CBOSA1	Infineon Technologies	IGBT MOD 1200V 70A 360W IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 70 A Power - Max: 360 W Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	1200 V	70 A	360 W	3.7V @ 15V, 50A	5 mA	3.3 nF @ 25 V	Standard	Yes	-40°C ~ 125°C	Chassis Mount	Module	Module
BSM150GT120DN2BOSA1	Infineon Technologies	IGBT MODULE 1200V IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FF450R12ME4EB11BPSA2	Infineon Technologies	MEDIUM POWER ECONO AG-ECONOD-411 IGBT Type: Trench Field Stop Configuration: Half Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 450 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONOD-6	패키지: -	Request a Quote	Half Bridge Inverter	1200 V	450 A	20 mW	2.1V @ 15V, 450A	3 mA	28 nF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-ECONOD-6
IX526112	IXYS	ITF40PF1200DHGTLB-TUB IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FS25R12W1T4PBPSA1	Infineon Technologies	IGBT MODULE 1200V 45A 205W EASY IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 45 A Power - Max: 205 W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-1	패키지: -	Request a Quote	Three Phase Inverter	1200 V	45 A	205 W	2.25V @ 15V, 25A	1 mA	-	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	AG-EASY1B-1
BSM300GA170DLCHOSA1	Infineon Technologies	IGBT MOD 1700V 600A 2520W IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 600 A Power - Max: 2520 W Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A Current - Collector Cutoff (Max): 600 µA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	1700 V	600 A	2520 W	3.2V @ 15V, 300A	600 µA	20 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
FZ1200R17HE4HOSA2	Infineon Technologies	IGBT MOD 1700V 1200A 7800W IGBT Type: - Configuration: Single Switch Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 1200 A Power - Max: 7800 W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 97 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single Switch	1700 V	1200 A	7800 W	2.3V @ 15V, 1200A	5 mA	97 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
FF1400R17IP4B60BOSA1	Infineon Technologies	PP IHM I IGBT Type: Trench Field Stop Configuration: Half Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 1400 A Power - Max: 9550 W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.4kA Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 110000 pF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	Half Bridge Inverter	1700 V	1400 A	9550 W	2.2V @ 15V, 1.4kA	5 mA	110000 pF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
FF650R17IE4PB60BPSA1	Infineon Technologies	PP IHM I IGBT Type: - Configuration: Half Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 930 A Power - Max: 4.15 kW Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	Half Bridge Inverter	1700 V	930 A	4.15 kW	2.45V @ 15V, 650A	5 mA	54000 pF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	-
FD650R17IE4BOSA2	Infineon Technologies	IGBT MOD 1700V 930A 4150W IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 930 A Power - Max: 4150 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	1700 V	930 A	4150 W	2.45V @ 15V, 650A	5 mA	54 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
NXH800A100L4Q2F2P2G	onsemi	MASS MARKET GEN3 Q2PACK NEGATIVE IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector (Ic) (Max): 309 A Power - Max: 714 W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A Current - Collector Cutoff (Max): 20 µA Input Capacitance (Cies) @ Vce: 49700 pF @ 20 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 51-PIM/Q2PACK (93x47)	패키지: -	Request a Quote	Three Phase Inverter	1000 V	309 A	714 W	2.3V @ 15V, 400A	20 µA	49700 pF @ 20 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	51-PIM/Q2PACK (93x47)
MSCGLQ50DH120CTBL2NG	Microchip Technology	PM-IGBT-SBD-BL2 IGBT Type: - Configuration: Asymmetrical Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 110 A Power - Max: 375 W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	Asymmetrical Bridge	1200 V	110 A	375 W	2.4V @ 15V, 50A	25 µA	2.77 nF @ 25 V	Standard	Yes	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MIP75R12E2ATN-BP	Micro Commercial Co	IGBT MODULES 1200V 75A, E2A IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Power - Max: 476 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.2 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: E2A	패키지: -	재고15	Three Phase Inverter	1200 V	75 A	476 W	2.15V @ 15V, 75A	1 mA	4.2 nF @ 25 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	E2A
FF300R12KS4HOSA1	Infineon Technologies	IGBT MOD 1200V 370A 1950W IGBT Type: - Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 370 A Power - Max: 1950 W Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	2 Independent	1200 V	370 A	1950 W	3.75V @ 15V, 300A	5 mA	20 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
FP75R12KT4B16BOSA1	Infineon Technologies	IGBT MOD 1200V 150A 385W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: 385 W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고21	Three Phase Inverter	1200 V	150 A	385 W	2.25V @ 15V, 75A	1 mA	4.3 nF @ 25 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
BSM10GP60BOSA1	Infineon Technologies	BSM10GP60 - IGBT MODULE 600V 20A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
MIXG240W1200PZTEH	IXYS	IGBT MODULE - SIXPACK E3-PACK-PF IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 312 A Power - Max: 938 W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A Current - Collector Cutoff (Max): 150 µA Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: E3	패키지: -	Request a Quote	Three Phase Inverter	1200 V	312 A	938 W	2V @ 15V, 200A	150 µA	10.6 nF @ 100 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	E3

CM75TU-12H

Powerex Inc.

IGBT MOD 6PAC 600V 75A U SER

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Power - Max: 310W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 6.6nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고7,216

Three Phase Inverter

600V

75A

310W

3V @ 15V, 75A

1mA

6.6nF @ 10V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

FF401R17KF6C_B2

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1700V 400A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,568

-

FF900R12IP4V

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 900A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,992

-

CM400DU-24F

Powerex Inc.

IGBT MOD DUAL 1200V 400A F SER

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 400A
Power - Max: 1100W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 160nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고5,328

Half Bridge

1200V

400A

1100W

2.4V @ 15V, 400A

2mA

160nF @ 10V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

FF600R17ME4_B11

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 600A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,880

-

APTGT600DU60G

Microsemi Corporation

IGBT MOD TRENCH DUAL SOURCE SP6

IGBT Type: Trench Field Stop
Configuration: Dual, Common Source
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 700A
Power - Max: 2300W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
Current - Collector Cutoff (Max): 750µA
Input Capacitance (Cies) @ Vce: 49nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고5,440

Dual, Common Source

600V

700A

2300W

1.8V @ 15V, 600A

750µA

49nF @ 25V

Standard

No

-40°C ~ 175°C (TJ)

Chassis Mount

SP6

FF150R12ME3G

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 150A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,808

-

APTGT150A60T3AG

Microsemi Corporation

MOD IGBT 600V 225A SP3

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 225A
Power - Max: 600W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고2,848

Half Bridge

600V

225A

600W

1.9V @ 15V, 150A

250µA

9.2nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP3

APTGT50DH120T3G

Microsemi Corporation

MOD IGBT 1200V 75A SP3

IGBT Type: Trench Field Stop
Configuration: Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 277W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고6,128

Asymmetrical Bridge

1200V

75A

277W

2.1V @ 15V, 50A

250µA

3.6nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTGT300SK60D3G

Microsemi Corporation

IGBT BUCK CHOPPER 600V 400A D3

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 400A
Power - Max: 940W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 18.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D-3 Module
Supplier Device Package: D3

패키지: D-3 Module

재고6,320

Single

600V

400A

940W

1.9V @ 15V, 300A

500µA

18.5nF @ 25V

Standard

No

-

Chassis Mount

D-3 Module

D3

NVH660S75L4SPFB

onsemi

AUTOMOTIVE 750V, 660A SSDC POWER

IGBT Type: Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 660 A
Power - Max: 733 W
Vce(on) (Max) @ Vge, Ic: 1.44V @ 15V, 450A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 63000 pF @ 30 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SSDC33

패키지: -

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Three Phase Inverter

750 V

660 A

733 W

1.44V @ 15V, 450A

500 µA

63000 pF @ 30 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SSDC33

FP50R12KS4CBOSA1

Infineon Technologies

IGBT MOD 1200V 70A 360W

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Power - Max: 360 W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

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Single

1200 V

70 A

360 W

3.7V @ 15V, 50A

5 mA

3.3 nF @ 25 V

Standard

Yes

-40°C ~ 125°C

Chassis Mount

Module

BSM150GT120DN2BOSA1

Infineon Technologies

IGBT MODULE 1200V

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FF450R12ME4EB11BPSA2

Infineon Technologies

MEDIUM POWER ECONO AG-ECONOD-411

IGBT Type: Trench Field Stop
Configuration: Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONOD-6

패키지: -

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Half Bridge Inverter

1200 V

450 A

20 mW

2.1V @ 15V, 450A

3 mA

28 nF @ 25 V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-ECONOD-6

IX526112

IXYS

ITF40PF1200DHGTLB-TUB

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FS25R12W1T4PBPSA1

Infineon Technologies

IGBT MODULE 1200V 45A 205W EASY

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 45 A
Power - Max: 205 W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B-1

패키지: -

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Three Phase Inverter

1200 V

45 A

205 W

2.25V @ 15V, 25A

1 mA

-

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

AG-EASY1B-1

BSM300GA170DLCHOSA1

Infineon Technologies

IGBT MOD 1700V 600A 2520W

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 600 A
Power - Max: 2520 W
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

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Single

1700 V

600 A

2520 W

3.2V @ 15V, 300A

600 µA

20 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

FZ1200R17HE4HOSA2

Infineon Technologies

IGBT MOD 1700V 1200A 7800W

IGBT Type: -
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1200 A
Power - Max: 7800 W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 97 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

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Single Switch

1700 V

1200 A

7800 W

2.3V @ 15V, 1200A

5 mA

97 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

FF1400R17IP4B60BOSA1

Infineon Technologies

PP IHM I

IGBT Type: Trench Field Stop
Configuration: Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1400 A
Power - Max: 9550 W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.4kA
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110000 pF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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Half Bridge Inverter

1700 V

1400 A

9550 W

2.2V @ 15V, 1.4kA

5 mA

110000 pF @ 25 V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

FF650R17IE4PB60BPSA1

Infineon Technologies

PP IHM I

IGBT Type: -
Configuration: Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 930 A
Power - Max: 4.15 kW
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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Half Bridge Inverter

1700 V

930 A

4.15 kW

2.45V @ 15V, 650A

5 mA

54000 pF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

-

FD650R17IE4BOSA2

Infineon Technologies

IGBT MOD 1700V 930A 4150W

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 930 A
Power - Max: 4150 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

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Single

1700 V

930 A

4150 W

2.45V @ 15V, 650A

5 mA

54 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

NXH800A100L4Q2F2P2G

onsemi

MASS MARKET GEN3 Q2PACK NEGATIVE

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 309 A
Power - Max: 714 W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 49700 pF @ 20 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 51-PIM/Q2PACK (93x47)

패키지: -

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Three Phase Inverter

1000 V

309 A

714 W

2.3V @ 15V, 400A

20 µA

49700 pF @ 20 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

51-PIM/Q2PACK (93x47)

MSCGLQ50DH120CTBL2NG

Microchip Technology

PM-IGBT-SBD-BL2

IGBT Type: -
Configuration: Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 110 A
Power - Max: 375 W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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Asymmetrical Bridge

1200 V

110 A

375 W

2.4V @ 15V, 50A

25 µA

2.77 nF @ 25 V

Standard

Yes

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

MIP75R12E2ATN-BP

Micro Commercial Co

IGBT MODULES 1200V 75A, E2A

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Power - Max: 476 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.2 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: E2A

패키지: -

재고15

Three Phase Inverter

1200 V

75 A

476 W

2.15V @ 15V, 75A

1 mA

4.2 nF @ 25 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

E2A

FF300R12KS4HOSA1

Infineon Technologies

IGBT MOD 1200V 370A 1950W

IGBT Type: -
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 370 A
Power - Max: 1950 W
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

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2 Independent

1200 V

370 A

1950 W

3.75V @ 15V, 300A

5 mA

20 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

FP75R12KT4B16BOSA1

Infineon Technologies

IGBT MOD 1200V 150A 385W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 385 W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고21

Three Phase Inverter

1200 V

150 A

385 W

2.25V @ 15V, 75A

1 mA

4.3 nF @ 25 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 150°C

Chassis Mount

Module

BSM10GP60BOSA1

Infineon Technologies

BSM10GP60 - IGBT MODULE 600V 20A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MIXG240W1200PZTEH

IXYS

IGBT MODULE - SIXPACK E3-PACK-PF

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 312 A
Power - Max: 938 W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: E3

패키지: -

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Three Phase Inverter

1200 V

312 A

938 W

2V @ 15V, 200A

150 µA

10.6 nF @ 100 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

E3