페이지 33 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG5K30FF06Z	Infineon Technologies	MOD IGBT 600V 30A 6PK EZIRPACK1 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Power - Max: 200W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 1.9nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: EZIRPACK 1? Module Supplier Device Package: EZIRPACK 1?	패키지: EZIRPACK 1? Module	재고6,416	Three Phase Inverter	600V	60A	200W	2.1V @ 15V, 30A	1mA	1.9nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	EZIRPACK 1? Module	EZIRPACK 1?
IRG5K100HF12B	Infineon Technologies	MOD IGBT 1200V 100A POWIR 62 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 780W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 11.7nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 62 Module Supplier Device Package: POWIR? 62	패키지: POWIR? 62 Module	재고3,824	Half Bridge	1200V	200A	780W	2.6V @ 15V, 100A	2mA	11.7nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	POWIR? 62 Module	POWIR? 62
QID1215003	Powerex Inc.	MOD IGBT 1200V 105A IGBT Type: - Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Power - Max: 960W Vce(on) (Max) @ Vge, Ic: 6.5V @ 15V, 150A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 24nF @ 10V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,272	2 Independent	1200V	150A	960W	6.5V @ 15V, 150A	1mA	24nF @ 10V	Standard	No	-40°C ~ 150°C (TJ)	-	-	-
VS-GT100NA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 134A 463W SOT-227 IGBT Type: Trench Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 134A Power - Max: 463W Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고6,880	Single	1200V	134A	463W	2.85V @ 15V, 100A	100µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GB70LA60UF	Vishay Semiconductor Diodes Division	IGBT 600V 111A 447W SOT-227 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 111A Power - Max: 447W Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고3,280	Single	600V	111A	447W	2.44V @ 15V, 70A	100µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
IXSN35N100U1	IXYS	IGBT 64A 1000V SOT-227B IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 38A Power - Max: 205W Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A Current - Collector Cutoff (Max): 750µA Input Capacitance (Cies) @ Vce: 4.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고5,056	Single	1000V	38A	205W	3.5V @ 15V, 25A	750µA	4.5nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
CM600HA-28H	Powerex Inc.	IGBT MOD SGL 1400V 600A H SER IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1400V Current - Collector (Ic) (Max): 600A Power - Max: 4100W Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 600A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 120nF @ 10V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고4,192	Single	1400V	600A	4100W	4.2V @ 15V, 600A	2mA	120nF @ 10V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
CM400DX-12A	Powerex Inc.	IGBT MOD DUAL 600V 400A NX SER IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 400A Power - Max: 1340W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 50nF @ 10V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고7,824	Half Bridge	600V	400A	1340W	2.1V @ 15V, 400A	1mA	50nF @ 10V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
VS-GT100TP60N	Vishay Semiconductor Diodes Division	IGBT 600V 160A 417W INT-A-PAK IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 160A Power - Max: 417W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 7.71nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고2,320	Half Bridge	600V	160A	417W	2.1V @ 15V, 100A	5mA	7.71nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
VS-CPV364M4UPBF	Vishay Semiconductor Diodes Division	MOD IGBT 3PHASE INV 600V SIP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Power - Max: 63W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 2.1nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	패키지: 19-SIP (13 Leads), IMS-2	재고5,312	-	600V	20A	63W	2.1V @ 15V, 10A	250µA	2.1nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
APTGLQ75H65T1G	Microsemi Corporation	PWR MOD IGBT4 650V 150A SP1 IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 150A Power - Max: 250W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 4.62nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고7,456	Full Bridge	650V	150A	250W	2.3V @ 15V, 75A	100µA	4.62nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Through Hole	SP1	SP1
APTGT150A60T1G	Microsemi Corporation	IGBT PHASE LEG 600V 225A SP1 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 225A Power - Max: 480W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 9.2nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고7,568	Half Bridge	600V	225A	480W	1.9V @ 15V, 150A	250µA	9.2nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP1	SP1
FS150R12N2T7BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2-6 IGBT Type: Trench Field Stop Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A Current - Collector Cutoff (Max): 1.2 µA Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2	패키지: -	재고30	Three Level Inverter	1200 V	150 A	20 mW	1.8V @ 15V, 150A	1.2 µA	30.1 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-ECONO2
FF900R17ME7B11BPSA1	Infineon Technologies	MEDIUM POWER ECONO IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 900 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	재고30	2 Independent	1700 V	900 A	20 mW	1.85V @ 15V, 900A	5 mA	93.8 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
FS100R12KT4GBOSA1	Infineon Technologies	IGBT MOD 1200V 100A 515W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Power - Max: 515 W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고30	Three Phase Inverter	1200 V	100 A	515 W	2.2V @ 15V, 100A	1 mA	6.3 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
FF200R12KE3B2HOSA1	Infineon Technologies	IGBT MOD 1200V 295A 1050W IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 295 A Power - Max: 1050 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고15	Half Bridge	1200 V	295 A	1050 W	2.15V @ 15V, 200A	5 mA	14 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
BSM10GD120DN2BOSA1	Infineon Technologies	IGBT MODULE 2 LOW PWR ECONO2-1 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FS450R07A2P2B31BOSA1	Infineon Technologies	IGBT MODULE PACK DRV HYBRIDD-1 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
PCHMB75W12	KYOCERA AVX	IGBT MODULE, 1IN1, CHOPPER CIRCU IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Power - Max: 290 W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 8000 pF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	1200 V	75 A	290 W	2V @ 15V, 75A	1 mA	8000 pF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FB30R06W1E3BOMA1	Infineon Technologies	IGBT MODULE 600V 39A 115W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 39 A Power - Max: 115 W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고72	Three Phase Inverter	600 V	39 A	115 W	2V @ 15V, 30A	1 mA	1.65 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
FF300R12KE4EHOSA1	Infineon Technologies	IGBT MOD 1200V 460A 1600W IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 460 A Power - Max: 1600 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	2 Independent	1200 V	460 A	1600 W	2.15V @ 15V, 300A	5 mA	19 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
FMM7G30US60I	Fairchild Semiconductor	INSULATED GATE BIPOLAR TRANSISTO IGBT Type: - Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Power - Max: 104 W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.1 nF @ 30 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	Three Phase Inverter with Brake	600 V	30 A	104 W	2.7V @ 15V, 30A	250 µA	2.1 nF @ 30 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Through Hole	Module	-
FS200R07N3E4RB11BOSA1	Infineon Technologies	FS200R07 - IGBT MODULE IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
NXH350N100H4Q2F2S1G-R	onsemi	GEN1.5 1500V MASS MARKET IGBT Type: Trench Field Stop Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector (Ic) (Max): 303 A Power - Max: 592 W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 42-PIM/Q2PACK (93x47)	패키지: -	재고216	Three Level Inverter	1000 V	303 A	592 W	2.3V @ 15V, 375A	1 mA	24.146 nF @ 20 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	42-PIM/Q2PACK (93x47)
FZ2400R12HE4B9HDSA2	Infineon Technologies	IGBT MODULE IGBT Type: Trench Field Stop Configuration: 3 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 3560 A Power - Max: 13500 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 150 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	3 Independent	1200 V	3560 A	13500 W	2.1V @ 15V, 2.4kA	5 mA	150 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FF8MR12W2M1PB11BPSA1	Infineon Technologies	IGBT MODULE LOW POWER EASY IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FZ600R12KP4HOSA1	Infineon Technologies	IGBT MODULE 1200V 600A IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 600 A Power - Max: - Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 42 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고30	Single	1200 V	600 A	-	2.05V @ 15V, 600A	5 mA	42 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
APTGTQ100DA65T1G	Microchip Technology	IGBT MODULE 650V 100A 250W SP1 IGBT Type: - Configuration: Boost Chopper Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Power - Max: 250 W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 6 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP1	패키지: -	Request a Quote	Boost Chopper	650 V	100 A	250 W	2.2V @ 15V, 100A	100 µA	6 nF @ 25 V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP1

IRG5K30FF06Z

Infineon Technologies

MOD IGBT 600V 30A 6PK EZIRPACK1

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Power - Max: 200W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 1.9nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: EZIRPACK 1? Module
Supplier Device Package: EZIRPACK 1?

패키지: EZIRPACK 1? Module

재고6,416

Three Phase Inverter

600V

60A

200W

2.1V @ 15V, 30A

1mA

1.9nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

EZIRPACK 1? Module

EZIRPACK 1?

IRG5K100HF12B

Infineon Technologies

MOD IGBT 1200V 100A POWIR 62

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 780W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 11.7nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 62 Module
Supplier Device Package: POWIR? 62

패키지: POWIR? 62 Module

재고3,824

Half Bridge

1200V

200A

780W

2.6V @ 15V, 100A

2mA

11.7nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

POWIR? 62 Module

POWIR? 62

QID1215003

Powerex Inc.

MOD IGBT 1200V 105A

IGBT Type: -
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 960W
Vce(on) (Max) @ Vge, Ic: 6.5V @ 15V, 150A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 24nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,272

2 Independent

1200V

150A

960W

6.5V @ 15V, 150A

1mA

24nF @ 10V

Standard

No

-40°C ~ 150°C (TJ)

-

VS-GT100NA120UX

Vishay Semiconductor Diodes Division

IGBT 1200V 134A 463W SOT-227

IGBT Type: Trench
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 134A
Power - Max: 463W
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고6,880

Single

1200V

134A

463W

2.85V @ 15V, 100A

100µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

VS-GB70LA60UF

Vishay Semiconductor Diodes Division

IGBT 600V 111A 447W SOT-227

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 111A
Power - Max: 447W
Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고3,280

Single

600V

111A

447W

2.44V @ 15V, 70A

100µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

IXSN35N100U1

IXYS

IGBT 64A 1000V SOT-227B

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 38A
Power - Max: 205W
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
Current - Collector Cutoff (Max): 750µA
Input Capacitance (Cies) @ Vce: 4.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고5,056

Single

1000V

38A

205W

3.5V @ 15V, 25A

750µA

4.5nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227B

CM600HA-28H

Powerex Inc.

IGBT MOD SGL 1400V 600A H SER

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1400V
Current - Collector (Ic) (Max): 600A
Power - Max: 4100W
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 600A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 120nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고4,192

Single

1400V

600A

4100W

4.2V @ 15V, 600A

2mA

120nF @ 10V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

CM400DX-12A

Powerex Inc.

IGBT MOD DUAL 600V 400A NX SER

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 400A
Power - Max: 1340W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 50nF @ 10V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고7,824

Half Bridge

600V

400A

1340W

2.1V @ 15V, 400A

1mA

50nF @ 10V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

VS-GT100TP60N

Vishay Semiconductor Diodes Division

IGBT 600V 160A 417W INT-A-PAK

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 160A
Power - Max: 417W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 7.71nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고2,320

Half Bridge

600V

160A

417W

2.1V @ 15V, 100A

5mA

7.71nF @ 30V

Standard

No

175°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

VS-CPV364M4UPBF

Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Power - Max: 63W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 2.1nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 19-SIP (13 Leads), IMS-2
Supplier Device Package: IMS-2

패키지: 19-SIP (13 Leads), IMS-2

재고5,312

-

600V

20A

63W

2.1V @ 15V, 10A

250µA

2.1nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Through Hole

19-SIP (13 Leads), IMS-2

IMS-2

APTGLQ75H65T1G

Microsemi Corporation

PWR MOD IGBT4 650V 150A SP1

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 150A
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고7,456

Full Bridge

650V

150A

250W

2.3V @ 15V, 75A

100µA

4.62nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Through Hole

SP1

APTGT150A60T1G

Microsemi Corporation

IGBT PHASE LEG 600V 225A SP1

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 225A
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고7,568

Half Bridge

600V

225A

480W

1.9V @ 15V, 150A

250µA

9.2nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP1

FS150R12N2T7BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2-6

IGBT Type: Trench Field Stop
Configuration: Three Level Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
Current - Collector Cutoff (Max): 1.2 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2

패키지: -

재고30

Three Level Inverter

1200 V

150 A

20 mW

1.8V @ 15V, 150A

1.2 µA

30.1 nF @ 25 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-ECONO2

FF900R17ME7B11BPSA1

Infineon Technologies

MEDIUM POWER ECONO

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 900 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

재고30

2 Independent

1700 V

900 A

20 mW

1.85V @ 15V, 900A

5 mA

93.8 nF @ 25 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

FS100R12KT4GBOSA1

Infineon Technologies

IGBT MOD 1200V 100A 515W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 515 W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고30

Three Phase Inverter

1200 V

100 A

515 W

2.2V @ 15V, 100A

1 mA

6.3 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

FF200R12KE3B2HOSA1

Infineon Technologies

IGBT MOD 1200V 295A 1050W

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 295 A
Power - Max: 1050 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고15

Half Bridge

1200 V

295 A

1050 W

2.15V @ 15V, 200A

5 mA

14 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

BSM10GD120DN2BOSA1

Infineon Technologies

IGBT MODULE 2 LOW PWR ECONO2-1

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FS450R07A2P2B31BOSA1

Infineon Technologies

IGBT MODULE PACK DRV HYBRIDD-1

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

PCHMB75W12

KYOCERA AVX

IGBT MODULE, 1IN1, CHOPPER CIRCU

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Power - Max: 290 W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8000 pF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single

1200 V

75 A

290 W

2V @ 15V, 75A

1 mA

8000 pF @ 25 V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

FB30R06W1E3BOMA1

Infineon Technologies

IGBT MODULE 600V 39A 115W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 39 A
Power - Max: 115 W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고72

Three Phase Inverter

600 V

39 A

115 W

2V @ 15V, 30A

1 mA

1.65 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

FF300R12KE4EHOSA1

Infineon Technologies

IGBT MOD 1200V 460A 1600W

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 460 A
Power - Max: 1600 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

2 Independent

1200 V

460 A

1600 W

2.15V @ 15V, 300A

5 mA

19 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

FMM7G30US60I

Fairchild Semiconductor

INSULATED GATE BIPOLAR TRANSISTO

IGBT Type: -
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Power - Max: 104 W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.1 nF @ 30 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

Three Phase Inverter with Brake

600 V

30 A

104 W

2.7V @ 15V, 30A

250 µA

2.1 nF @ 30 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 150°C (TJ)

Through Hole

Module

-

FS200R07N3E4RB11BOSA1

Infineon Technologies

FS200R07 - IGBT MODULE

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NXH350N100H4Q2F2S1G-R

onsemi

GEN1.5 1500V MASS MARKET

IGBT Type: Trench Field Stop
Configuration: Three Level Inverter
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 303 A
Power - Max: 592 W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 375A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 42-PIM/Q2PACK (93x47)

패키지: -

재고216

Three Level Inverter

1000 V

303 A

592 W

2.3V @ 15V, 375A

1 mA

24.146 nF @ 20 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

42-PIM/Q2PACK (93x47)

FZ2400R12HE4B9HDSA2

Infineon Technologies

IGBT MODULE

IGBT Type: Trench Field Stop
Configuration: 3 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3560 A
Power - Max: 13500 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

3 Independent

1200 V

3560 A

13500 W

2.1V @ 15V, 2.4kA

5 mA

150 nF @ 25 V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

FF8MR12W2M1PB11BPSA1

Infineon Technologies

IGBT MODULE LOW POWER EASY

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FZ600R12KP4HOSA1

Infineon Technologies

IGBT MODULE 1200V 600A

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 42 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고30

Single

1200 V

600 A

-

2.05V @ 15V, 600A

5 mA

42 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

APTGTQ100DA65T1G

Microchip Technology

IGBT MODULE 650V 100A 250W SP1

IGBT Type: -
Configuration: Boost Chopper
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 250 W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP1

패키지: -

Request a Quote

Boost Chopper

650 V

100 A

250 W

2.2V @ 15V, 100A

100 µA

6 nF @ 25 V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP1