페이지 35 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7T75HF12A	Infineon Technologies	MOD IGBT 1200V 75A POWIR 34 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Power - Max: 450W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 10.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 34 Module Supplier Device Package: POWIR? 34	패키지: POWIR? 34 Module	재고3,632	Half Bridge	1200V	150A	450W	2.2V @ 15V, 75A	1mA	10.4nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	POWIR? 34 Module	POWIR? 34
CM200E3U-12H	Powerex Inc.	IGBT MOD CHOP 600V 200A U SER IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Power - Max: 650W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 17.6nF @ 10V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고3,440	Single	600V	200A	650W	3V @ 15V, 200A	1mA	17.6nF @ 10V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
VDI25-06P1	IXYS	MOD IGBT BUCK 600V ECO-PAC2 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24.5A Power - Max: 82W Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A Current - Collector Cutoff (Max): 600µA Input Capacitance (Cies) @ Vce: 8nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	패키지: ECO-PAC2	재고3,168	Single	600V	24.5A	82W	2.9V @ 15V, 25A	600µA	8nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	ECO-PAC2	ECO-PAC2
VS-GB300TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 500A 1645W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 500A Power - Max: 1645W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 4)	재고5,024	Half Bridge	1200V	500A	1645W	2.45V @ 15V, 300A	5mA	21.2nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB400AH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 550A 2841W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 550A Power - Max: 2841W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 33.7nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (5) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (5)	재고3,696	Single	1200V	550A	2841W	3.6V @ 15V, 400A	5mA	33.7nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (5)	Double INT-A-PAK
GSID150A120S3B1	Global Power Technologies Group	SILICON IGBT MODULES IGBT Type: - Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 300A Power - Max: 940W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 14nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: D-3 Module Supplier Device Package: D3	패키지: D-3 Module	재고2,928	2 Independent	1200V	300A	940W	2V @ 15V, 150A	1mA	14nF @ 25V	Standard	No	-40°C ~ 150°C	Chassis Mount	D-3 Module	D3
VS-GP100TS60SFPBF	Vishay Semiconductor Diodes Division	IGBT IGBT Type: PT, Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 337A Power - Max: 781W Vce(on) (Max) @ Vge, Ic: 1.34V @ 15V, 100A Current - Collector Cutoff (Max): 150µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	패키지: INT-A-Pak	재고4,288	Half Bridge	600V	337A	781W	1.34V @ 15V, 100A	150µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
FP75R07N2E4_B11	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE VCES 600V 75A IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,104	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGT150DH60TG	Microsemi Corporation	IGBT MOD TRENCH ASYM BRIDGE SP4 IGBT Type: Trench Field Stop Configuration: Asymmetrical Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 225A Power - Max: 480W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 9.2nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고4,848	Asymmetrical Bridge	600V	225A	480W	1.9V @ 15V, 150A	250µA	9.2nF @ 25V	Standard	Yes	-40°C ~ 175°C (TJ)	Chassis Mount	SP4	SP4
MUBW10-06A6K	IXYS	MODULE IGBT CBI E1 IGBT Type: NPT Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Power - Max: 50W Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 10A Current - Collector Cutoff (Max): 65µA Input Capacitance (Cies) @ Vce: 0.22nF @ 25V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: E1 Supplier Device Package: E1	패키지: E1	재고3,584	Three Phase Inverter with Brake	600V	11A	50W	3.3V @ 15V, 10A	65µA	0.22nF @ 25V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	E1	E1
CM300EXS-24S	Powerex Inc.	IGBT 1200V 300A 2270W MODULE IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 300A Power - Max: 2270W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 300A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 30nF @ 10V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	패키지: Module	재고6,512	Single	1200V	300A	2270W	2.25V @ 15V, 300A	1mA	30nF @ 10V	Standard	Yes	-40°C ~ 150°C (TJ)	-	Module	Module
APT65GP60J	Microsemi Corporation	IGBT 600V 130A 431W SOT227 IGBT Type: PT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 130A Power - Max: 431W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 7.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP?	패키지: SOT-227-4, miniBLOC	재고4,080	Single	600V	130A	431W	2.7V @ 15V, 65A	1mA	7.4nF @ 25V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	ISOTOP?
FP35R12W2T4B11BOMA1	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE 1200V 35A IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 54A Power - Max: 215W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 2nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고3,808	Three Phase Inverter	1200V	54A	215W	2.25V @ 15V, 35A	1mA	2nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
MG1275S-BA1MM	Littelfuse Inc.	IGBT 1200V 105A 630W PKG S IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 105A Power - Max: 630W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A (Typ) Current - Collector Cutoff (Max): 500µA Input Capacitance (Cies) @ Vce: 5.52nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: S-3 Module Supplier Device Package: S3	패키지: S-3 Module	재고7,248	Half Bridge	1200V	105A	630W	1.8V @ 15V, 75A (Typ)	500µA	5.52nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	S-3 Module	S3
FS10R06VE3BOMA1	Infineon Technologies	IGBT MODULE 600V 16A 50W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 16 A Power - Max: 50 W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 550 pF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	600 V	16 A	50 W	2V @ 15V, 10A	1 mA	550 pF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
FZ1800R17HP4B9HOSA2	Infineon Technologies	IGBT MODULE 1700V 1800A IGBT Type: Trench Configuration: Single Switch Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 1800 A Power - Max: 11500 W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single Switch	1700 V	1800 A	11500 W	2.25V @ 15V, 1800A	5 mA	145 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
FF200R12KT3HOSA1	Infineon Technologies	IGBT MODULE 1200V 1050W IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Power - Max: 1050 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고30	2 Independent	1200 V	-	1050 W	2.15V @ 15V, 200A	5 mA	14 nF @ 25 V	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module
IFS150B12N3E4PB11BPSA1	Infineon Technologies	IGBT MOD 1200V 300A 750W IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 300 A Power - Max: 750 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Full Bridge	1200 V	300 A	750 W	2.1V @ 15V, 150A	1 mA	9.3 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
FS500R17OE4DBOSA1	Infineon Technologies	IGBT MOD 1700V 740A 3000W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 740 A Power - Max: 3000 W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 40 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고12	Three Phase Inverter	1700 V	740 A	3000 W	2.3V @ 15V, 500A	3 mA	40 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
MSCGLQ100A65TG	Microchip Technology	PM-IGBT-SP4 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고27	-	-	-	-	-	-	-	-	-	-	-	-	-
FZ2400R12KE3B9NOSA1	Infineon Technologies	IGBT MODULE IGBT Type: - Configuration: Single Switch Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 3200 A Power - Max: 11500 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 2.4kA Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 170 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-IHM190-2-1	패키지: -	Request a Quote	Single Switch	1200 V	3200 A	11500 W	2.15V @ 15V, 2.4kA	5 mA	170 nF @ 25 V	Standard	No	-40°C ~ 125°C (TJ)	Chassis Mount	Module	AG-IHM190-2-1
FS450R17KE4BOSA1	Infineon Technologies	IGBT MOD 1700V 600A 2500W IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 600 A Power - Max: 2500 W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 36 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Full Bridge	1700 V	600 A	2500 W	2.3V @ 15V, 450A	3 mA	36 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
FF300R06KE3HOSA1	Infineon Technologies	IGBT MOD 600V 400A 940W IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 400 A Power - Max: 940 W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	2 Independent	600 V	400 A	940 W	1.9V @ 15V, 300A	5 mA	19 nF @ 25 V	Standard	No	-40°C ~ 150°C	Chassis Mount	Module	Module
FP100R07N3E4B16BOSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO3-3 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
F4200R17N3E4BPSA1	Infineon Technologies	IGBT MOD 1700V 200A 20MW IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 200 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고30	Full Bridge	1700 V	200 A	20 mW	2.3V @ 15V, 200A	1 mA	18 nF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FS150R12KT4B11BOSA1	Infineon Technologies	IGBT MOD 1200V 150A 750W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: 750 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고18	Three Phase Inverter	1200 V	150 A	750 W	2.1V @ 15V, 150A	1 mA	9.35 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
FT150R12KE3B5BOSA1	Infineon Technologies	IGBT MODULE POWER IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
FP75R12N3T4B80BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO3-386 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고30	-	-	-	-	-	-	-	-	-	-	-	-	-

IRG7T75HF12A

Infineon Technologies

MOD IGBT 1200V 75A POWIR 34

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 450W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 10.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 34 Module
Supplier Device Package: POWIR? 34

패키지: POWIR? 34 Module

재고3,632

Half Bridge

1200V

150A

450W

2.2V @ 15V, 75A

1mA

10.4nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

POWIR? 34 Module

POWIR? 34

CM200E3U-12H

Powerex Inc.

IGBT MOD CHOP 600V 200A U SER

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 200A
Power - Max: 650W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 17.6nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고3,440

Single

600V

200A

650W

3V @ 15V, 200A

1mA

17.6nF @ 10V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

VDI25-06P1

IXYS

MOD IGBT BUCK 600V ECO-PAC2

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 24.5A
Power - Max: 82W
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
Current - Collector Cutoff (Max): 600µA
Input Capacitance (Cies) @ Vce: 8nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

패키지: ECO-PAC2

재고3,168

Single

600V

24.5A

82W

2.9V @ 15V, 25A

600µA

8nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

ECO-PAC2

VS-GB300TH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 500A 1645W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 500A
Power - Max: 1645W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 21.2nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 4)

재고5,024

Half Bridge

1200V

500A

1645W

2.45V @ 15V, 300A

5mA

21.2nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 4)

Double INT-A-PAK

VS-GB400AH120U

Vishay Semiconductor Diodes Division

IGBT 1200V 550A 2841W INT-A-PAK

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 550A
Power - Max: 2841W
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 33.7nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (5)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (5)

재고3,696

Single

1200V

550A

2841W

3.6V @ 15V, 400A

5mA

33.7nF @ 30V

Standard

No

150°C (TJ)

Chassis Mount

Double INT-A-PAK (5)

Double INT-A-PAK

GSID150A120S3B1

Global Power Technologies Group

SILICON IGBT MODULES

IGBT Type: -
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 300A
Power - Max: 940W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 14nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: D-3 Module
Supplier Device Package: D3

패키지: D-3 Module

재고2,928

2 Independent

1200V

300A

940W

2V @ 15V, 150A

1mA

14nF @ 25V

Standard

No

-40°C ~ 150°C

Chassis Mount

D-3 Module

D3

VS-GP100TS60SFPBF

Vishay Semiconductor Diodes Division

IGBT

IGBT Type: PT, Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 337A
Power - Max: 781W
Vce(on) (Max) @ Vge, Ic: 1.34V @ 15V, 100A
Current - Collector Cutoff (Max): 150µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK

패키지: INT-A-Pak

재고4,288

Half Bridge

600V

337A

781W

1.34V @ 15V, 100A

150µA

-

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

INT-A-Pak

INT-A-PAK

FP75R07N2E4_B11

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 75A

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,104

-

APTGT150DH60TG

Microsemi Corporation

IGBT MOD TRENCH ASYM BRIDGE SP4

IGBT Type: Trench Field Stop
Configuration: Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 225A
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고4,848

Asymmetrical Bridge

600V

225A

480W

1.9V @ 15V, 150A

250µA

9.2nF @ 25V

Standard

Yes

-40°C ~ 175°C (TJ)

Chassis Mount

SP4

MUBW10-06A6K

IXYS

MODULE IGBT CBI E1

IGBT Type: NPT
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 11A
Power - Max: 50W
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 10A
Current - Collector Cutoff (Max): 65µA
Input Capacitance (Cies) @ Vce: 0.22nF @ 25V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E1
Supplier Device Package: E1

패키지: E1

재고3,584

Three Phase Inverter with Brake

600V

11A

50W

3.3V @ 15V, 10A

65µA

0.22nF @ 25V

Three Phase Bridge Rectifier

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

E1

CM300EXS-24S

Powerex Inc.

IGBT 1200V 300A 2270W MODULE

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 300A
Power - Max: 2270W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 300A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 30nF @ 10V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고6,512

Single

1200V

300A

2270W

2.25V @ 15V, 300A

1mA

30nF @ 10V

Standard

Yes

-40°C ~ 150°C (TJ)

-

Module

APT65GP60J

Microsemi Corporation

IGBT 600V 130A 431W SOT227

IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 130A
Power - Max: 431W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 7.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?

패키지: SOT-227-4, miniBLOC

재고4,080

Single

600V

130A

431W

2.7V @ 15V, 65A

1mA

7.4nF @ 25V

Standard

No

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

ISOTOP?

FP35R12W2T4B11BOMA1

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 35A

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 54A
Power - Max: 215W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고3,808

Three Phase Inverter

1200V

54A

215W

2.25V @ 15V, 35A

1mA

2nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

MG1275S-BA1MM

Littelfuse Inc.

IGBT 1200V 105A 630W PKG S

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 105A
Power - Max: 630W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A (Typ)
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: S-3 Module
Supplier Device Package: S3

패키지: S-3 Module

재고7,248

Half Bridge

1200V

105A

630W

1.8V @ 15V, 75A (Typ)

500µA

5.52nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

S-3 Module

S3

FS10R06VE3BOMA1

Infineon Technologies

IGBT MODULE 600V 16A 50W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Power - Max: 50 W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

600 V

16 A

50 W

2V @ 15V, 10A

1 mA

550 pF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

FZ1800R17HP4B9HOSA2

Infineon Technologies

IGBT MODULE 1700V 1800A

IGBT Type: Trench
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1800 A
Power - Max: 11500 W
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single Switch

1700 V

1800 A

11500 W

2.25V @ 15V, 1800A

5 mA

145 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

FF200R12KT3HOSA1

Infineon Technologies

IGBT MODULE 1200V 1050W

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Power - Max: 1050 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고30

2 Independent

1200 V

-

1050 W

2.15V @ 15V, 200A

5 mA

14 nF @ 25 V

Standard

No

-40°C ~ 125°C

Chassis Mount

Module

IFS150B12N3E4PB11BPSA1

Infineon Technologies

IGBT MOD 1200V 300A 750W

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 300 A
Power - Max: 750 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Full Bridge

1200 V

300 A

750 W

2.1V @ 15V, 150A

1 mA

9.3 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

FS500R17OE4DBOSA1

Infineon Technologies

IGBT MOD 1700V 740A 3000W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 740 A
Power - Max: 3000 W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고12

Three Phase Inverter

1700 V

740 A

3000 W

2.3V @ 15V, 500A

3 mA

40 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

MSCGLQ100A65TG

Microchip Technology

PM-IGBT-SP4

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고27

-

FZ2400R12KE3B9NOSA1

Infineon Technologies

IGBT MODULE

IGBT Type: -
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3200 A
Power - Max: 11500 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 2.4kA
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 170 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-IHM190-2-1

패키지: -

Request a Quote

Single Switch

1200 V

3200 A

11500 W

2.15V @ 15V, 2.4kA

5 mA

170 nF @ 25 V

Standard

No

-40°C ~ 125°C (TJ)

Chassis Mount

Module

AG-IHM190-2-1

FS450R17KE4BOSA1

Infineon Technologies

IGBT MOD 1700V 600A 2500W

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 600 A
Power - Max: 2500 W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Full Bridge

1700 V

600 A

2500 W

2.3V @ 15V, 450A

3 mA

36 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

FF300R06KE3HOSA1

Infineon Technologies

IGBT MOD 600V 400A 940W

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 400 A
Power - Max: 940 W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

2 Independent

600 V

400 A

940 W

1.9V @ 15V, 300A

5 mA

19 nF @ 25 V

Standard

No

-40°C ~ 150°C

Chassis Mount

Module

FP100R07N3E4B16BOSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3-3

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

F4200R17N3E4BPSA1

Infineon Technologies

IGBT MOD 1700V 200A 20MW

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 200 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고30

Full Bridge

1700 V

200 A

20 mW

2.3V @ 15V, 200A

1 mA

18 nF @ 25 V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

FS150R12KT4B11BOSA1

Infineon Technologies

IGBT MOD 1200V 150A 750W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 750 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고18

Three Phase Inverter

1200 V

150 A

750 W

2.1V @ 15V, 150A

1 mA

9.35 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

FT150R12KE3B5BOSA1

Infineon Technologies

IGBT MODULE POWER

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FP75R12N3T4B80BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3-386

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고30

-