페이지 37 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  37/123
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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CM20TF-24H
Powerex Inc.

IGBT MOD 6PAC 1200V 20A H SER

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 20A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 4nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,640
Three Phase Inverter
1200V
20A
250W
3.4V @ 15V, 20A
1mA
4nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
CM600HX-24A
Powerex Inc.

IGBT MOD SGL 1200V 600A NX SER

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 600A
  • Power - Max: 3785W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 600A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 100nF @ 10V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,512
Single
1200V
600A
3785W
2.6V @ 15V, 600A
1mA
100nF @ 10V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APTGF50A60T1G
Microsemi Corporation

IGBT MODULE NPT PHASE LEG SP1

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 2.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고5,168
Half Bridge
600V
65A
250W
2.45V @ 15V, 50A
250µA
2.2nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
FD800R33KF2C-K
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1700V 800A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,784
-
-
-
-
-
-
-
-
-
-
-
-
-
APTGLQ400A120T6G
Microsemi Corporation

PWR MOD IGBT4 1200V 700A SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 700A
  • Power - Max: 1900W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
  • Current - Collector Cutoff (Max): 200µA
  • Input Capacitance (Cies) @ Vce: 24.6nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고5,392
Half Bridge
1200V
700A
1900W
2.4V @ 15V, 400A
200µA
24.6nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Through Hole
SP6
SP6
CM100DU-34KA
Powerex Inc.

IGBT MOD DUAL 1700V 100A KA SER

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 890W
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 14nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고2,528
Half Bridge
1700V
100A
890W
4V @ 15V, 100A
1mA
14nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
MIEB101W1200EH
IXYS

IGBT MODULE 1200V 183A HEX

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 183A
  • Power - Max: 630W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 300µA
  • Input Capacitance (Cies) @ Vce: 7.43nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
패키지: E3
재고4,624
Three Phase Inverter
1200V
183A
630W
2.2V @ 15V, 100A
300µA
7.43nF @ 25V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
E3
E3
APTGT75TA60PG
Microsemi Corporation

IGBT MOD TRENCH 3PHASE LEG SP6-P

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
패키지: SP6
재고6,272
Three Phase
600V
100A
250W
1.9V @ 15V, 75A
250µA
4.62nF @ 25V
Standard
No
-40°C ~ 175°C (TJ)
Chassis Mount
SP6
SP6-P
MDI145-12A3
IXYS

IGBT NPT BUCK 1200V 160A Y4-M5

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 700W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
  • Current - Collector Cutoff (Max): 6mA
  • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M5
  • Supplier Device Package: Y4-M5
패키지: Y4-M5
재고3,920
Single
1200V
160A
700W
2.7V @ 15V, 100A
6mA
6.5nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Y4-M5
Y4-M5
APTGL40H120T1G
Microsemi Corporation

MOD IGBT 1200V 65A SP1

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 65A
  • Power - Max: 220W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 1.95nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고5,200
Full Bridge
1200V
65A
220W
2.25V @ 15V, 35A
250µA
1.95nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
FP15R12W1T4_B11
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 22A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,584
-
-
-
-
-
-
-
-
-
-
-
-
-
hot FP20R06W1E3_B11
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 20A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,832
-
-
-
-
-
-
-
-
-
-
-
-
-
GHIS060A120S-A1
Global Power Technologies Group

IGBT BOOST CHP 1200V 120A SOT227

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 120A
  • Power - Max: 680W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 8nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고6,800
Single
1200V
120A
680W
2.5V @ 15V, 60A
2mA
8nF @ 30V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
NXH350N100H4Q2F2SG
onsemi

IC MODULE PIM 350A 1000V

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 303 A
  • Power - Max: 592 W
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 375A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 42-PIM/Q2PACK (93x47)
패키지: -
Request a Quote
Three Level Inverter
1000 V
303 A
592 W
1.8V @ 15V, 375A
1 mA
24.146 nF @ 20 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
42-PIM/Q2PACK (93x47)
FF11MR12W2M1HB70BPSA1
Infineon Technologies

LOW POWER EASY

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고45
-
-
-
-
-
-
-
-
-
-
-
-
-
FF300R17KE3S4HOSA1
Infineon Technologies

IGBT MODULE VCES 600V 300A

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): -
  • Power - Max: 1450 W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
Half Bridge Inverter
1700 V
-
1450 W
2.4V @ 15V, 300A
3 mA
27 nF @ 25 V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
FS30R06XE3BOMA1
Infineon Technologies

IGBT MODULE 600V 37A 100W

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 37 A
  • Power - Max: 100 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge
600 V
37 A
100 W
2V @ 15V, 30A
1 mA
1.65 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF450R17ME4PBOSA1
Infineon Technologies

IGBT MOD 1700V 900A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고18
Half Bridge
1700 V
900 A
20 mW
2.3V @ 15V, 450A
3 mA
36 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
NXH400N100L4Q2F2SG
onsemi

ESS 200KW PIM SOLDER PIN

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 360 A
  • Power - Max: 980 W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 400A
  • Current - Collector Cutoff (Max): 25 µA
  • Input Capacitance (Cies) @ Vce: 26.06 nF @ 20 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 48-PIM/Q2PACK (93x47)
패키지: -
Request a Quote
Three Level Inverter
1000 V
360 A
980 W
2.2V @ 15V, 400A
25 µA
26.06 nF @ 20 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
48-PIM/Q2PACK (93x47)
FP50R06W2E3BOMA1
Infineon Technologies

IGBT MODULE 600V 65A 175W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 65 A
  • Power - Max: 175 W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고36
Three Phase Inverter
600 V
65 A
175 W
1.9V @ 15V, 50A
1 mA
3.1 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FP150R12N3T4PB81BPSA1
Infineon Technologies

LOW POWER ECONO

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
F1225R12KT4GBOSA1
Infineon Technologies

IGBT MOD 1200V 25A 160W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Power - Max: 160 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고24
Three Phase Inverter
1200 V
25 A
160 W
2.15V @ 15V, 25A
1 mA
1.45 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
FF600R12IE4PNOSA1
Infineon Technologies

IGBT MOD 1200V 600A 3350W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 3350 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge
1200 V
600 A
3350 W
2.05V @ 15V, 600A
5 mA
37 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
PDMB150W12
KYOCERA AVX

IGBT MODULE, 2IN1, 1200V/150A

  • IGBT Type: -
  • Configuration: Dual, Common Source
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 657 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 15000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
Dual, Common Source
1200 V
150 A
657 W
2V @ 15V, 150A
1 mA
15000 pF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
IFF450B12ME4PB11BPSA1
Infineon Technologies

IGBT MOD 1200V 450A 40W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 450 A
  • Power - Max: 40 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고21
Half Bridge
1200 V
450 A
40 W
2.1V @ 15V, 450A
3 mA
28 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
NXH75M65L4Q1SG
onsemi

Q1PACK 75A 650V

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 59 A
  • Power - Max: 86 W
  • Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A
  • Current - Collector Cutoff (Max): 300 µA
  • Input Capacitance (Cies) @ Vce: 5.665 nF @ 30 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 56-PIM (93x47)
패키지: -
재고63
Half Bridge
650 V
59 A
86 W
2.22V @ 15V, 75A
300 µA
5.665 nF @ 30 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
56-PIM (93x47)
MSCGLQ50X120CTYZBNMG
Microchip Technology

PM-IGBT-SBD-6HPD

  • IGBT Type: -
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 90 A
  • Power - Max: 330 W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Current - Collector Cutoff (Max): 25 µA
  • Input Capacitance (Cies) @ Vce: 2770 pF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
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Three Phase Inverter with Brake
1200 V
90 A
330 W
2.4V @ 15V, 50A
25 µA
2770 pF @ 25 V
Three Phase Bridge Rectifier
Yes
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
FF600R12IE4BOSA1
Infineon Technologies

IGBT MOD 1200V 600A 3350W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 3350 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고6
Half Bridge
1200 V
600 A
3350 W
2.05V @ 15V, 600A
5 mA
37 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module