페이지 85 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7T200HF12B	Infineon Technologies	MOD IGBT 1200V 200A POWIR 62 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 400A Power - Max: 1060W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 22.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 62 Module Supplier Device Package: POWIR? 62	패키지: POWIR? 62 Module	재고5,360	Half Bridge	1200V	400A	1060W	2.2V @ 15V, 200A	2mA	22.4nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	POWIR? 62 Module	POWIR? 62
IRG5K150HF12B	Infineon Technologies	MOD IGBT 1200V 150A POWIR 62 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 300A Power - Max: 1060W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 19nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 62 Module Supplier Device Package: POWIR? 62	패키지: POWIR? 62 Module	재고5,312	Half Bridge	1200V	300A	1060W	2.6V @ 15V, 150A	2mA	19nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	POWIR? 62 Module	POWIR? 62
VS-GT400TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 750A 2344W DIAP IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 750A Power - Max: 2344W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 51.2nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 8) Supplier Device Package: Double INT-A-PAK	패키지: Double INT-A-PAK (3 + 8)	재고5,232	Half Bridge	1200V	750A	2344W	2.35V @ 15V, 400A	5mA	51.2nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 8)	Double INT-A-PAK
VS-EMG050J60N	Vishay Semiconductor Diodes Division	IGBT 600V 88A 338W EMIPAK2 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 88A Power - Max: 338W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 9.5nF @ 30V Input: Standard NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: EMIPAK2 Supplier Device Package: EMIPAK2	패키지: EMIPAK2	재고3,776	Half Bridge	600V	88A	338W	2.1V @ 15V, 50A	100µA	9.5nF @ 30V	Standard	Yes	150°C (TJ)	Chassis Mount	EMIPAK2	EMIPAK2
CM100E3U-12H	Powerex Inc.	IGBT MOD CHOP 600V 100A U SER IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Power - Max: 400W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 8.8nF @ 10V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고7,072	Single	600V	100A	400W	3V @ 15V, 100A	1mA	8.8nF @ 10V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
APTGT50SK120D1G	Microsemi Corporation	IGBT 1200V 75A 270W D1 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Power - Max: 270W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 3.6nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D1 Supplier Device Package: D1	패키지: D1	재고6,176	Single	1200V	75A	270W	2.1V @ 15V, 50A	5mA	3.6nF @ 25V	Standard	No	-	Chassis Mount	D1	D1
APTGF90A60TG	Microsemi Corporation	IGBT MODULE NPT PHASE LEG SP4 IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 110A Power - Max: 416W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 4.3nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	패키지: SP4	재고7,888	Half Bridge	600V	110A	416W	2.5V @ 15V, 90A	250µA	4.3nF @ 25V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTGF530U120D4G	Microsemi Corporation	IGBT 1200V 700A 3900W D4 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 700A Power - Max: 3900W Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 600A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 37nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: D4 Supplier Device Package: D4	패키지: D4	재고5,296	Single	1200V	700A	3900W	3.7V @ 15V, 600A	5mA	37nF @ 25V	Standard	No	-	Chassis Mount	D4	D4
VIO75-06P1	IXYS	MOD IGBT DIODE SGL 600V ECOPAC2 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 69A Power - Max: 208W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A Current - Collector Cutoff (Max): 800µA Input Capacitance (Cies) @ Vce: 2.8nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	패키지: ECO-PAC2	재고4,928	Single	600V	69A	208W	2.8V @ 15V, 75A	800µA	2.8nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	ECO-PAC2	ECO-PAC2
MWI100-12A8	IXYS	MOD IGBT SIXPACK RBSOA 1200V E3 IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Power - Max: 640W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A Current - Collector Cutoff (Max): 6.3mA Input Capacitance (Cies) @ Vce: 6.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	패키지: E3	재고4,448	Three Phase Inverter	1200V	160A	640W	2.6V @ 15V, 100A	6.3mA	6.5nF @ 25V	Standard	No	-40°C ~ 125°C (TJ)	Chassis Mount	E3	E3
APTGL700U120D4G	Microsemi Corporation	IGBT 1200V 910A 3000W D4 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 910A Power - Max: 3000W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 37.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: D4 Supplier Device Package: D4	패키지: D4	재고7,968	Single	1200V	910A	3000W	2.2V @ 15V, 600A	4mA	37.2nF @ 25V	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount	D4	D4
MWI75-12T7T	IXYS	IGBT MOD TRENCH SIX-PACK E3 IGBT Type: Trench Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 110A Power - Max: 355W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 5.35nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: E2	재고2,448	Three Phase Inverter	1200V	110A	355W	2.15V @ 15V, 75A	4mA	5.35nF @ 25V	Standard	Yes	-40°C ~ 125°C (TJ)	Chassis Mount	E2	E2
MII145-12A3	IXYS	MOD IGBT RBSOA 1200V 160A Y4-M5 IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Power - Max: 700W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A Current - Collector Cutoff (Max): 6mA Input Capacitance (Cies) @ Vce: 6.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4-M5 Supplier Device Package: Y4-M5	패키지: Y4-M5	재고3,552	Half Bridge	1200V	160A	700W	2.7V @ 15V, 100A	6mA	6.5nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Y4-M5	Y4-M5
VS-GB50TP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 100A 446W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Power - Max: 446W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 4.29nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	패키지: INT-A-PAK (3 + 4)	재고5,536	Half Bridge	1200V	100A	446W	2.15V @ 15V, 50A	5mA	4.29nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	INT-A-PAK (3 + 4)	INT-A-PAK
IXGN100N160A	IXYS	IGBT 200A 1600V SOT-227B IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1600V Current - Collector (Ic) (Max): 200A Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고5,088	Single	1600V	200A	-	-	-	-	Standard	No	-	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
FZ1600R17KE3	Infineon Technologies Industrial Power and Controls Americas	IGBT MODULE 1700V 1600A IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 2300A Power - Max: 8950W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 145nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고5,728	Three Phase Inverter	1700V	2300A	8950W	2.45V @ 15V, 600A	5mA	145nF @ 25V	Standard	Yes	-40°C ~ 125°C (TJ)	Chassis Mount	Module	Module
MG12300D-BA1MM	Littelfuse Inc.	IGBT 1200V 450A 1800W PKG D IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 450A Power - Max: 1800W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A (Typ) Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 21.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: D3	패키지: Module	재고5,424	Half Bridge	1200V	450A	1800W	1.9V @ 15V, 300A (Typ)	2mA	21.2nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	D3
FMM7G50US60N	Fairchild Semiconductor	INSULATED GATE BIPOLAR TRANSISTO IGBT Type: - Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Power - Max: 139 W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.565 nF @ 30 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	Three Phase Inverter with Brake	600 V	50 A	139 W	2.7V @ 15V, 50A	250 µA	3.565 nF @ 30 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Through Hole	Module	-
FS300R17OE4BOSA1	Infineon Technologies	IGBT MOD 1700V 450A 1850W IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 450 A Power - Max: 1850 W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고18	Full Bridge	1700 V	450 A	1850 W	2.3V @ 15V, 300A	3 mA	24.5 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
FS100R12KT4PB15BPSA1	Infineon Technologies	IGBT MODULE IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Power - Max: 515 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO3	패키지: -	Request a Quote	Full Bridge Inverter	1200 V	100 A	515 W	2.1V @ 15V, 100A	1 mA	6.3 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-ECONO3
FF225R17ME3BOSA1	Infineon Technologies	IGBT MOD 1700V 340A 1400W IGBT Type: Trench Field Stop Configuration: Half Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 340 A Power - Max: 1400 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 225A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 20.5 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Half Bridge Inverter	1700 V	340 A	1400 W	2.45V @ 15V, 225A	3 mA	20.5 nF @ 25 V	Standard	Yes	-40°C ~ 125°C	Chassis Mount	Module	Module
F3L300R12MT4B22BOSA1	Infineon Technologies	IGBT MOD 1200V 450A 1550W IGBT Type: Trench Field Stop Configuration: Half Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 450 A Power - Max: 1550 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Half Bridge Inverter	1200 V	450 A	1550 W	2.1V @ 15V, 300A	1 mA	19 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
MSCGTQ100HD65C1AG	Microchip Technology	PM-IGBT-TFS-SBD~-SP1F IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): 80 A Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP1	패키지: -	재고6	Half Bridge	650 V	80 A	-	-	80 A	-	Standard	No	-	Chassis Mount	Module	SP1
FS450R17OE4BOSA1	Infineon Technologies	IGBT MOD 1700V 630A 2400W IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 630 A Power - Max: 2400 W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 36 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Full Bridge	1700 V	630 A	2400 W	2.3V @ 15V, 450A	3 mA	36 nF @ 25 V	Standard	Yes	-40°C ~ 150°C	Chassis Mount	Module	Module
BSM25GD120DN2E3224BOSA1	Infineon Technologies	IGBT MOD 1200V 35A 200W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 35 A Power - Max: 200 W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A Current - Collector Cutoff (Max): 800 µA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	1200 V	35 A	200 W	3V @ 15V, 25A	800 µA	1.65 nF @ 25 V	Standard	No	150°C (TJ)	Chassis Mount	Module	Module
FF600R12ME4WB73BPSA1	Infineon Technologies	MEDIUM POWER ECONO IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 600 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONOD	패키지: -	재고15	2 Independent	1200 V	600 A	20 mW	2.1V @ 15V, 600A	3 mA	37 nF @ 25 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-ECONOD
6MS30017E43W40372NOSA1	Infineon Technologies	IGBT MODULE 1700V 1800A IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 1800 A Power - Max: 29140 W Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -25°C ~ 55°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Three Phase Inverter	1700 V	1800 A	29140 W	-	-	-	Standard	Yes	-25°C ~ 55°C	Chassis Mount	Module	Module
BSM100GB60DLCHOSA1	Infineon Technologies	IGBT MOD 600V 130A 445W IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 130 A Power - Max: 445 W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	600 V	130 A	445 W	2.45V @ 15V, 100A	500 µA	-	Standard	No	-40°C ~ 125°C	Chassis Mount	Module	Module

IRG7T200HF12B

Infineon Technologies

MOD IGBT 1200V 200A POWIR 62

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 400A
Power - Max: 1060W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 22.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 62 Module
Supplier Device Package: POWIR? 62

패키지: POWIR? 62 Module

재고5,360

Half Bridge

1200V

400A

1060W

2.2V @ 15V, 200A

2mA

22.4nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

POWIR? 62 Module

POWIR? 62

IRG5K150HF12B

Infineon Technologies

MOD IGBT 1200V 150A POWIR 62

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 300A
Power - Max: 1060W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 19nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 62 Module
Supplier Device Package: POWIR? 62

패키지: POWIR? 62 Module

재고5,312

Half Bridge

1200V

300A

1060W

2.6V @ 15V, 150A

2mA

19nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

POWIR? 62 Module

POWIR? 62

VS-GT400TH120U

Vishay Semiconductor Diodes Division

IGBT 1200V 750A 2344W DIAP

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 750A
Power - Max: 2344W
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 51.2nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 8)
Supplier Device Package: Double INT-A-PAK

패키지: Double INT-A-PAK (3 + 8)

재고5,232

Half Bridge

1200V

750A

2344W

2.35V @ 15V, 400A

5mA

51.2nF @ 30V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Double INT-A-PAK (3 + 8)

Double INT-A-PAK

VS-EMG050J60N

Vishay Semiconductor Diodes Division

IGBT 600V 88A 338W EMIPAK2

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 88A
Power - Max: 338W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: EMIPAK2
Supplier Device Package: EMIPAK2

패키지: EMIPAK2

재고3,776

Half Bridge

600V

88A

338W

2.1V @ 15V, 50A

100µA

9.5nF @ 30V

Standard

Yes

150°C (TJ)

Chassis Mount

EMIPAK2

CM100E3U-12H

Powerex Inc.

IGBT MOD CHOP 600V 100A U SER

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Power - Max: 400W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 8.8nF @ 10V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고7,072

Single

600V

100A

400W

3V @ 15V, 100A

1mA

8.8nF @ 10V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

APTGT50SK120D1G

Microsemi Corporation

IGBT 1200V 75A 270W D1

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 270W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1

패키지: D1

재고6,176

Single

1200V

75A

270W

2.1V @ 15V, 50A

5mA

3.6nF @ 25V

Standard

No

-

Chassis Mount

D1

APTGF90A60TG

Microsemi Corporation

IGBT MODULE NPT PHASE LEG SP4

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 110A
Power - Max: 416W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

패키지: SP4

재고7,888

Half Bridge

600V

110A

416W

2.5V @ 15V, 90A

250µA

4.3nF @ 25V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTGF530U120D4G

Microsemi Corporation

IGBT 1200V 700A 3900W D4

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 700A
Power - Max: 3900W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 600A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 37nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: D4
Supplier Device Package: D4

패키지: D4

재고5,296

Single

1200V

700A

3900W

3.7V @ 15V, 600A

5mA

37nF @ 25V

Standard

No

-

Chassis Mount

D4

VIO75-06P1

IXYS

MOD IGBT DIODE SGL 600V ECOPAC2

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 69A
Power - Max: 208W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
Current - Collector Cutoff (Max): 800µA
Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

패키지: ECO-PAC2

재고4,928

Single

600V

69A

208W

2.8V @ 15V, 75A

800µA

2.8nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

ECO-PAC2

MWI100-12A8

IXYS

MOD IGBT SIXPACK RBSOA 1200V E3

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 160A
Power - Max: 640W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Current - Collector Cutoff (Max): 6.3mA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3

패키지: E3

재고4,448

Three Phase Inverter

1200V

160A

640W

2.6V @ 15V, 100A

6.3mA

6.5nF @ 25V

Standard

No

-40°C ~ 125°C (TJ)

Chassis Mount

E3

APTGL700U120D4G

Microsemi Corporation

IGBT 1200V 910A 3000W D4

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 910A
Power - Max: 3000W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 37.2nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D4
Supplier Device Package: D4

패키지: D4

재고7,968

Single

1200V

910A

3000W

2.2V @ 15V, 600A

4mA

37.2nF @ 25V

Standard

No

-40°C ~ 175°C (TJ)

Chassis Mount

D4

MWI75-12T7T

IXYS

IGBT MOD TRENCH SIX-PACK E3

IGBT Type: Trench
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 110A
Power - Max: 355W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 5.35nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: E2

재고2,448

Three Phase Inverter

1200V

110A

355W

2.15V @ 15V, 75A

4mA

5.35nF @ 25V

Standard

Yes

-40°C ~ 125°C (TJ)

Chassis Mount

E2

MII145-12A3

IXYS

MOD IGBT RBSOA 1200V 160A Y4-M5

IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 160A
Power - Max: 700W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Current - Collector Cutoff (Max): 6mA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Supplier Device Package: Y4-M5

패키지: Y4-M5

재고3,552

Half Bridge

1200V

160A

700W

2.7V @ 15V, 100A

6mA

6.5nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Y4-M5

VS-GB50TP120N

Vishay Semiconductor Diodes Division

IGBT 1200V 100A 446W INT-A-PAK

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 446W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 4.29nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

재고5,536

Half Bridge

1200V

100A

446W

2.15V @ 15V, 50A

5mA

4.29nF @ 25V

Standard

No

150°C (TJ)

Chassis Mount

INT-A-PAK (3 + 4)

INT-A-PAK

IXGN100N160A

IXYS

IGBT 200A 1600V SOT-227B

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1600V
Current - Collector (Ic) (Max): 200A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고5,088

Single

1600V

200A

-

Standard

No

-

Chassis Mount

SOT-227-4, miniBLOC

SOT-227B

FZ1600R17KE3

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1700V 1600A

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 2300A
Power - Max: 8950W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 145nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고5,728

Three Phase Inverter

1700V

2300A

8950W

2.45V @ 15V, 600A

5mA

145nF @ 25V

Standard

Yes

-40°C ~ 125°C (TJ)

Chassis Mount

Module

MG12300D-BA1MM

Littelfuse Inc.

IGBT 1200V 450A 1800W PKG D

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 450A
Power - Max: 1800W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A (Typ)
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 21.2nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: D3

패키지: Module

재고5,424

Half Bridge

1200V

450A

1800W

1.9V @ 15V, 300A (Typ)

2mA

21.2nF @ 25V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

D3

FMM7G50US60N

Fairchild Semiconductor

INSULATED GATE BIPOLAR TRANSISTO

IGBT Type: -
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Power - Max: 139 W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.565 nF @ 30 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

Three Phase Inverter with Brake

600 V

50 A

139 W

2.7V @ 15V, 50A

250 µA

3.565 nF @ 30 V

Three Phase Bridge Rectifier

Yes

-40°C ~ 150°C (TJ)

Through Hole

Module

-

FS300R17OE4BOSA1

Infineon Technologies

IGBT MOD 1700V 450A 1850W

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 450 A
Power - Max: 1850 W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고18

Full Bridge

1700 V

450 A

1850 W

2.3V @ 15V, 300A

3 mA

24.5 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

FS100R12KT4PB15BPSA1

Infineon Technologies

IGBT MODULE

IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 515 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO3

패키지: -

Request a Quote

Full Bridge Inverter

1200 V

100 A

515 W

2.1V @ 15V, 100A

1 mA

6.3 nF @ 25 V

Standard

No

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-ECONO3

FF225R17ME3BOSA1

Infineon Technologies

IGBT MOD 1700V 340A 1400W

IGBT Type: Trench Field Stop
Configuration: Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 340 A
Power - Max: 1400 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 225A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 20.5 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Half Bridge Inverter

1700 V

340 A

1400 W

2.45V @ 15V, 225A

3 mA

20.5 nF @ 25 V

Standard

Yes

-40°C ~ 125°C

Chassis Mount

Module

F3L300R12MT4B22BOSA1

Infineon Technologies

IGBT MOD 1200V 450A 1550W

IGBT Type: Trench Field Stop
Configuration: Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Power - Max: 1550 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Half Bridge Inverter

1200 V

450 A

1550 W

2.1V @ 15V, 300A

1 mA

19 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

MSCGTQ100HD65C1AG

Microchip Technology

PM-IGBT-TFS-SBD~-SP1F

IGBT Type: Trench
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): 80 A
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP1

패키지: -

재고6

Half Bridge

650 V

80 A

-

80 A

-

Standard

No

-

Chassis Mount

Module

SP1

FS450R17OE4BOSA1

Infineon Technologies

IGBT MOD 1700V 630A 2400W

IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 630 A
Power - Max: 2400 W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Full Bridge

1700 V

630 A

2400 W

2.3V @ 15V, 450A

3 mA

36 nF @ 25 V

Standard

Yes

-40°C ~ 150°C

Chassis Mount

Module

BSM25GD120DN2E3224BOSA1

Infineon Technologies

IGBT MOD 1200V 35A 200W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 35 A
Power - Max: 200 W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

1200 V

35 A

200 W

3V @ 15V, 25A

800 µA

1.65 nF @ 25 V

Standard

No

150°C (TJ)

Chassis Mount

Module

FF600R12ME4WB73BPSA1

Infineon Technologies

MEDIUM POWER ECONO

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONOD

패키지: -

재고15

2 Independent

1200 V

600 A

20 mW

2.1V @ 15V, 600A

3 mA

37 nF @ 25 V

Standard

Yes

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-ECONOD

6MS30017E43W40372NOSA1

Infineon Technologies

IGBT MODULE 1700V 1800A

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1800 A
Power - Max: 29140 W
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -25°C ~ 55°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Three Phase Inverter

1700 V

1800 A

29140 W

-

Standard

Yes

-25°C ~ 55°C

Chassis Mount

Module

BSM100GB60DLCHOSA1

Infineon Technologies

IGBT MOD 600V 130A 445W

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 130 A
Power - Max: 445 W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Single

600 V

130 A

445 W

2.45V @ 15V, 100A

500 µA

-

Standard

No

-40°C ~ 125°C

Chassis Mount

Module