페이지 87 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  87/123
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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG5K50HF12A
Infineon Technologies

MOD IGBT 1200V 150A POWIR 34

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 390W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 6.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 34 Module
  • Supplier Device Package: POWIR? 34
패키지: POWIR? 34 Module
재고3,600
Half Bridge
1200V
100A
390W
2.6V @ 15V, 50A
1mA
6.2nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR? 34 Module
POWIR? 34
APTGF30TL601G
Microsemi Corporation

POWER MODULE IGBT 600V 30A SP1

  • IGBT Type: NPT
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Power - Max: 140W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 1.35nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고3,568
Three Level Inverter
600V
42A
140W
2.45V @ 15V, 30A
250µA
1.35nF @ 25V
Standard
No
-
Chassis Mount
SP1
SP1
CM300DU-12H
Powerex Inc.

IGBT MOD DUAL 600V 300A U SER

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 300A
  • Power - Max: 890W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 300A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 26.4nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,960
Half Bridge
600V
300A
890W
3V @ 15V, 300A
1mA
26.4nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
CM20TF-12H
Powerex Inc.

IGBT MOD 6PAC 600V 20A H SER

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Power - Max: 125W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 2nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,216
Three Phase Inverter
600V
20A
125W
2.8V @ 15V, 20A
1mA
2nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APTGF330SK60D3G
Microsemi Corporation

IGBT 600V 460A 1400W D3

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 460A
  • Power - Max: 1400W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 400A
  • Current - Collector Cutoff (Max): 750µA
  • Input Capacitance (Cies) @ Vce: 18nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3
패키지: D-3 Module
재고5,200
Single
600V
460A
1400W
2.5V @ 15V, 400A
750µA
18nF @ 25V
Standard
No
-
Chassis Mount
D-3 Module
D3
APTGT100H170G
Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 560W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
  • Current - Collector Cutoff (Max): 350µA
  • Input Capacitance (Cies) @ Vce: 9nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고5,824
Full Bridge Inverter
1700V
150A
560W
2.4V @ 15V, 100A
350µA
9nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTGT100DH170G
Microsemi Corporation

IGBT MOD TRENCH ASYM BRIDGE SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Asymmetrical Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 560W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
  • Current - Collector Cutoff (Max): 350µA
  • Input Capacitance (Cies) @ Vce: 9nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고4,576
Asymmetrical Bridge
1700V
150A
560W
2.4V @ 15V, 100A
350µA
9nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
hot FP25R12KT3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 40A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,520
-
-
-
-
-
-
-
-
-
-
-
-
-
hot FP15R12KE3G
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 22A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,656
-
-
-
-
-
-
-
-
-
-
-
-
-
APTGL90A120T1G
Microsemi Corporation

MOD IGBT 1200V 110A SP1

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 385W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고2,752
Half Bridge
1200V
110A
385W
2.25V @ 15V, 75A
250µA
4.4nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
IXA27IF1200HJ
IXYS

IGBT MODULE 1200V ISOPLUS247

  • IGBT Type: PT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 43A
  • Power - Max: 150W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고3,584
Single
1200V
43A
150W
2.1V @ 15V, 25A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
CM900DU-24NF
Powerex Inc.

IGBT MOD DUAL 1200V 900A NF MEGA

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 900A
  • Power - Max: 2550W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 900A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 140nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,712
Half Bridge
1200V
900A
2550W
2.5V @ 15V, 900A
1mA
140nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APTGT100TL60T3G
Microsemi Corporation

IGBT MODULE 3LEVEL INVERTER SP3

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 340W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 6.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고5,488
Three Level Inverter
600V
150A
340W
1.9V @ 15V, 100A
250µA
6.1nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP3
SP3
FS35R12W1T7BOMA1
Infineon Technologies

LOW POWER EASY AG-EASY1B-1

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 7.3 µA
  • Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
패키지: -
재고9
Three Phase Inverter
1200 V
35 A
-
-
7.3 µA
6.62 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY1B
DF600R12N2E4PB11BPSA1
Infineon Technologies

IGBT MODULE LOW POWER ECONO

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
F4250R17MP4B11BPSA1
Infineon Technologies

IGBT MODULE 1700V 370A

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 370 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge Inverter
1700 V
370 A
-
2.3V @ 15V, 250A
3 mA
21 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
FF200R12KS4PHOSA1
Infineon Technologies

IGBT MOD 1200V 275A 1400W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 275 A
  • Power - Max: 1400 W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고18
Half Bridge
1200 V
275 A
1400 W
3.7V @ 15V, 200A
5 mA
13 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
MIP50R12E1ATN-BP
Micro Commercial Co

IGBT MODULES 1200V 50A, E1A

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 288 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: E1A
패키지: -
재고15
Three Phase Inverter
1200 V
50 A
288 W
2.3V @ 15V, 50A
1 mA
2.6 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
E1A
F4100R06KL4BOSA1
Infineon Technologies

LOW POWER ECONO

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
MIXG360RF1200P-PC
IXYS

IGBT MODULE MIXG360RF1200PTED-PC

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FP75R17N3E4BPSA1
Infineon Technologies

IGBT MOD 1700V 125A 555W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 125 A
  • Power - Max: 555 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
1700 V
125 A
555 W
2.3V @ 15V, 75A
1 mA
6.8 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF150R17ME3GBOSA1
Infineon Technologies

IGBT MOD 1700V 240A 1050W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 240 A
  • Power - Max: 1050 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1700 V
240 A
1050 W
2.45V @ 15V, 150A
3 mA
13.5 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
FF225R17ME4B11BOSA1
Infineon Technologies

IGBT MOD 1700V 340A 1500W

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 340 A
  • Power - Max: 1500 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1700 V
340 A
1500 W
2.3V @ 15V, 225A
3 mA
18.5 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
6PS03012E33G34160NOSA1
Infineon Technologies

IGBT MODULE 300V 234A 2100W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: 2100 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 300A
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -25°C ~ 55°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
-
-
2100 W
2V @ 15V, 300A
-
-
Standard
No
-25°C ~ 55°C
Chassis Mount
Module
Module
FP75R12KT3BOSA1
Infineon Technologies

IGBT MOD 1200V 105A 355W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 105 A
  • Power - Max: 355 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고18
Three Phase Inverter
1200 V
105 A
355 W
2.15V @ 15V, 75A
1 mA
5.3 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
NXH75M65L4Q1PTG
onsemi

6KW H6.5 75A Q1PACK PRESS-FIT PI

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 59 A
  • Power - Max: 86 W
  • Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A
  • Current - Collector Cutoff (Max): 300 µA
  • Input Capacitance (Cies) @ Vce: 5.665 nF @ 30 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 53-PIM/Q2PACK (93x47)
패키지: -
재고63
Half Bridge
650 V
59 A
86 W
2.22V @ 15V, 75A
300 µA
5.665 nF @ 30 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
53-PIM/Q2PACK (93x47)
NXH100B120H3Q0STG
onsemi

IGBT MODULE 1200V 50A 186W PIM22

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 186 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Current - Collector Cutoff (Max): 200 µA
  • Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
패키지: -
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2 Independent
1200 V
50 A
186 W
2.3V @ 15V, 50A
200 µA
9.075 nF @ 20 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
22-PIM/Q0BOOST (55x32.5)
BSM150GB170DLCHOSA1
Infineon Technologies

IGBT MOD 1700V 300A 1250W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 300 A
  • Power - Max: 1250 W
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
  • Current - Collector Cutoff (Max): 300 µA
  • Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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Half Bridge
1700 V
300 A
1250 W
3.2V @ 15V, 150A
300 µA
10 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module