페이지 93 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  93/123
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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
F1235R12KT4GBOSA1
Infineon Technologies Industrial Power and Controls Americas

IGBT F1235R12KT4GBOSA1

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 35A
  • Power - Max: 210W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 2nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,288
Single
1200V
35A
210W
2.15V @ 15V, 35A
1mA
2nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
IXGN40N60CD1
IXYS

IGBT 600V SOT-227B

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: SOT-227-4, miniBLOC
재고3,888
Single
600V
-
-
-
-
-
Standard
No
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
QIS4506002
Powerex Inc.

IGBT MOD SINGLE 4500V 60A

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 4500V
  • Current - Collector (Ic) (Max): 60A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 67A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 9nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,400
Single
4500V
60A
-
3.9V @ 15V, 67A
1mA
9nF @ 10V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APTGF100DU120TG
Microsemi Corporation

IGBT MODULE NPT DUAL 1200V SP4

  • IGBT Type: NPT
  • Configuration: Dual, Common Source
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 135A
  • Power - Max: 568W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
  • Current - Collector Cutoff (Max): 350µA
  • Input Capacitance (Cies) @ Vce: 6.9nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
패키지: SP4
재고6,720
Dual, Common Source
1200V
135A
568W
3.7V @ 15V, 100A
350µA
6.9nF @ 25V
Standard
Yes
-
Chassis Mount
SP4
SP4
6PS04512E43W39693
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 500V 300A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,040
-
-
-
-
-
-
-
-
-
-
-
-
-
MWI150-12T8T
IXYS

MOD IGBT TRENCH SIXPACK E3

  • IGBT Type: Trench
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 215A
  • Power - Max: 690W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
  • Current - Collector Cutoff (Max): 6mA
  • Input Capacitance (Cies) @ Vce: 10.77nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
패키지: E3
재고5,968
Three Phase Inverter
1200V
215A
690W
2.1V @ 15V, 150A
6mA
10.77nF @ 25V
Standard
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
E3
E3
DF200R12PT4_B6
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 200A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,120
-
-
-
-
-
-
-
-
-
-
-
-
-
FS100R07N3E4_B11
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 100A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,464
-
-
-
-
-
-
-
-
-
-
-
-
-
APTGT100DH120TG
Microsemi Corporation

IGBT MOD TRENCH ASYM BRIDGE SP4

  • IGBT Type: Trench Field Stop
  • Configuration: Asymmetrical Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 140A
  • Power - Max: 480W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 7.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
패키지: SP4
재고3,072
Asymmetrical Bridge
1200V
140A
480W
2.1V @ 15V, 100A
250µA
7.2nF @ 25V
Standard
Yes
-
Chassis Mount
SP4
SP4
MUBW6-06A6
IXYS

MODULE IGBT CBI E1

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7A
  • Power - Max: 38W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Current - Collector Cutoff (Max): 10µA
  • Input Capacitance (Cies) @ Vce: 0.34nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E1
  • Supplier Device Package: E1
패키지: E1
재고5,120
Three Phase Inverter with Brake
600V
7A
38W
2.5V @ 15V, 4A
10µA
0.34nF @ 25V
Three Phase Bridge Rectifier
Yes
150°C (TJ)
Chassis Mount
E1
E1
VS-CPV362M4KPBF
Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
패키지: 19-SIP (13 Leads), IMS-2
재고7,040
-
-
-
-
-
-
-
-
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
APTGT150SK60T1G
Microsemi Corporation

IGBT 600V 225A 480W SP1

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 225A
  • Power - Max: 480W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고6,816
Single
600V
225A
480W
1.9V @ 15V, 150A
250µA
9.2nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
IXGN50N60BD3
IXYS

IGBT 600V FRD SOT-227B

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Current - Collector Cutoff (Max): 200µA
  • Input Capacitance (Cies) @ Vce: 4.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: SOT-227-4, miniBLOC
재고3,008
Single
600V
75A
250W
2.5V @ 15V, 50A
200µA
4.1nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
CM400DU-12NFH
Powerex Inc.

IGBT MOD DUAL 600V 400A NFH SER

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 960W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 400A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 110nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,736
Half Bridge
600V
400A
960W
2.7V @ 15V, 400A
1mA
110nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
CM225DX-24S1
Powerex Inc.

IGBT MOD NX 225A 1200V DUAL

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 225A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 225A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 20nF @ 10V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고5,776
Half Bridge
1200V
225A
1250W
2.35V @ 15V, 225A
1mA
20nF @ 10V
Standard
Yes
-40°C ~ 150°C (TJ)
-
Module
Module
FS50R12W2T4B11BOMA1
Infineon Technologies

IGBT MOD 1200V 83A 335W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 83 A
  • Power - Max: 335 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
Three Phase Inverter
1200 V
83 A
335 W
2.15V @ 15V, 50A
1 mA
2.8 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
F450R12KS4B11BOSA1
Infineon Technologies

IGBT MOD 1200V 70A 355W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 70 A
  • Power - Max: 355 W
  • Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
1200 V
70 A
355 W
3.75V @ 15V, 50A
1 mA
3.4 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
FF225R17ME7B11BPSA1
Infineon Technologies

ECONODUAL3 MODULE WITH TRENCHSTO

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 225 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
재고21
Half Bridge
1700 V
225 A
20 mW
1.85V @ 15V, 225A
5 mA
22.9 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
F4150R17N3P4B58BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO3B-411

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO3B
패키지: -
재고15
Full Bridge Inverter
1700 V
150 A
20 mW
2.2V @ 15V, 150A
1 mA
12.3 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONO3B
VS-VSHPS1444
Vishay General Semiconductor - Diodes Division

MODULE IGBT SIP SWITCH

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FS35R12KT3BOSA1
Infineon Technologies

IGBT MOD 1200V 55A 210W

  • IGBT Type: -
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 55 A
  • Power - Max: 210 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge Inverter
1200 V
55 A
210 W
2.15V @ 15V, 35A
5 mA
2.5 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
DDB2U50N08W1RB23BOMA2
Infineon Technologies

IGBT MODULE

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
-
-
-
-
-
14 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
IFF300B17N2E4PB11BPSA1
Infineon Technologies

IGBT MOD 1700V 400A 1500W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 400 A
  • Power - Max: 1500 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge
1700 V
400 A
1500 W
2.3V @ 15V, 300A
1 mA
27 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
BSM150GB120DLCHOSA1
Infineon Technologies

IGBT MOD 1200V 300A 1250W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 300 A
  • Power - Max: 1250 W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge
1200 V
300 A
1250 W
2.6V @ 15V, 150A
5 mA
11 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
FF150R12KE3GB2HOSA1
Infineon Technologies

IGBT MODULE VCES 1200V 150A

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 225 A
  • Power - Max: 780 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
Half Bridge Inverter
1200 V
225 A
780 W
2.15V @ 15V, 150A
5 mA
11 nF @ 25 V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
FD200R12KE3PHOSA1
Infineon Technologies

IGBT MODULE 1200V 200A

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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Single
1200 V
200 A
-
2.15V @ 15V, 200A
5 mA
14 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
APTGLQ200A120T3AG
Microchip Technology

IGBT MOD 1200V 400A 1250W SP3F

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 400 A
  • Power - Max: 1250 W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A
  • Current - Collector Cutoff (Max): 100 µA
  • Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
패키지: -
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2 Independent
1200 V
400 A
1250 W
2.4V @ 15V, 160A
100 µA
9.3 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MIXG180W1200PTEH
IXYS

IGBT MODULE - SIXPACK E3-PACK-PF

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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