페이지 95 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  95/123
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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7T100HF12A
Infineon Technologies

MOD IGBT 1200V 100A POWIR 34

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 575W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 13.7nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 34 Module
  • Supplier Device Package: POWIR? 34
패키지: POWIR? 34 Module
재고5,616
Half Bridge
1200V
200A
575W
2.2V @ 15V, 100A
1mA
13.7nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR? 34 Module
POWIR? 34
VS-GT75LP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 543W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 543W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
패키지: INT-A-Pak
재고3,984
Half Bridge
1200V
150A
543W
2.35V @ 15V, 75A
5mA
5.52nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GB75LP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 170A 658W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 170A
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 75A (Typ)
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
패키지: INT-A-PAK (3 + 4)
재고5,712
Single
1200V
170A
658W
1.82V @ 15V, 75A (Typ)
1mA
5.52nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
PP600T120
Powerex Inc.

IGBT POW-R-PAC 3PH 600A 1200V

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,944
-
-
-
-
-
-
-
-
No
-
-
-
-
APTGT20A60T1G
Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG SP1

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 32A
  • Power - Max: 62W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고5,232
Half Bridge
600V
32A
62W
1.9V @ 15V, 20A
250µA
1.1nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
APTGF500U60D4G
Microsemi Corporation

IGBT 600V 625A 2000W D4

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 625A
  • Power - Max: 2000W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 500A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 26nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: D4
  • Supplier Device Package: D4
패키지: D4
재고7,760
Single
600V
625A
2000W
2.45V @ 15V, 500A
500µA
26nF @ 25V
Standard
No
-
Chassis Mount
D4
D4
APTGF400U120D4G
Microsemi Corporation

IGBT 1200V 510A 2500W D4

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 510A
  • Power - Max: 2500W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 26nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D4
  • Supplier Device Package: D4
패키지: D4
재고7,088
Single
1200V
510A
2500W
3.7V @ 15V, 400A
5mA
26nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D4
D4
STG3P2M10N60B
STMicroelectronics

IGBT N-CHAN 600V 19A SEMITOP2

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 19A
  • Power - Max: 56W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
  • Current - Collector Cutoff (Max): 10µA
  • Input Capacitance (Cies) @ Vce: 0.72nF @ 25V
  • Input: Single Phase Bridge Rectifier
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SEMITOP?2
  • Supplier Device Package: SEMITOP?2
패키지: SEMITOP?2
재고6,784
Three Phase Inverter
600V
19A
56W
2.5V @ 15V, 7A
10µA
0.72nF @ 25V
Single Phase Bridge Rectifier
No
-40°C ~ 150°C (TJ)
Chassis Mount
SEMITOP?2
SEMITOP?2
VS-GA300TD60S
Vishay Semiconductor Diodes Division

IGBT 600V 530A 1136W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 530A
  • Power - Max: 1136W
  • Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A
  • Current - Collector Cutoff (Max): 750µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Dual INT-A-PAK (3 + 8)
  • Supplier Device Package: Dual INT-A-PAK
패키지: Dual INT-A-PAK (3 + 8)
재고2,144
Half Bridge
600V
530A
1136W
1.45V @ 15V, 300A
750µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Dual INT-A-PAK (3 + 8)
Dual INT-A-PAK
APTGT225A170G
Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 340A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 225A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 20nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고7,232
Half Bridge
1700V
340A
1250W
2.4V @ 15V, 225A
500µA
20nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
FD300R12KS4_B5
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 300A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,112
-
-
-
-
-
-
-
-
-
-
-
-
-
APTGT150DH120G
Microsemi Corporation

IGBT MOD TRENCH ASYM BRIDGE SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Asymmetrical Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 220A
  • Power - Max: 690W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
  • Current - Collector Cutoff (Max): 350µA
  • Input Capacitance (Cies) @ Vce: 10.7nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고3,936
Asymmetrical Bridge
1200V
220A
690W
2.1V @ 15V, 150A
350µA
10.7nF @ 25V
Standard
No
-
Chassis Mount
SP6
SP6
MWI50-12T7T
IXYS

MOD IGBT SIX-PACK RBSOA E2

  • IGBT Type: Trench
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 270W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
  • Current - Collector Cutoff (Max): 4mA
  • Input Capacitance (Cies) @ Vce: 3.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
패키지: E2
재고5,744
Three Phase Inverter
1200V
80A
270W
2.15V @ 15V, 50A
4mA
3.5nF @ 25V
Standard
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
E2
E2
MIXA225RF1200TSF
IXYS

IGBT MODULE 1200V 250A

  • IGBT Type: PT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 360A
  • Power - Max: 1100W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 225A
  • Current - Collector Cutoff (Max): 300µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,864
Single
1200V
360A
1100W
2.1V @ 15V, 225A
300µA
-
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APTGT200SK120G
Microsemi Corporation

IGBT 1200V 280A 890W SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 280A
  • Power - Max: 890W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
  • Current - Collector Cutoff (Max): 350µA
  • Input Capacitance (Cies) @ Vce: 14nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
패키지: SP6
재고3,296
Single
1200V
280A
890W
2.1V @ 15V, 200A
350µA
14nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
MWI30-06A7
IXYS

MOD IGBT SIXPACK RBSOA 600V E2

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Power - Max: 140W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
패키지: E2
재고7,824
Three Phase Inverter
600V
45A
140W
2.4V @ 15V, 30A
600µA
1.6nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
E2
E2
APTGT50DDA60T3G
Microsemi Corporation

IGBT MOD TRENCH DL BST CHOP SP3

  • IGBT Type: Trench Field Stop
  • Configuration: Dual Boost Chopper
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 176W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고4,352
Dual Boost Chopper
600V
80A
176W
1.9V @ 15V, 50A
250µA
3.15nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP3
SP3
hot FZ900R12KE4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 900A

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 900A
  • Power - Max: 4300W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 56nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고5,536
Single
1200V
900A
4300W
2.1V @ 15V, 900A
5mA
56nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
MIP100R12E2TN-BP
Micro Commercial Co

GBT MODULES

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 555 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 6800 pF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Three Phase Inverter
1200 V
100 A
555 W
2.25V @ 15V, 100A
1 mA
6800 pF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
FP15R12W1T7PBPSA1
Infineon Technologies

LOW POWER EASY AG-EASY1B-1

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 15 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 3 µA
  • Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
패키지: -
재고39
Three Phase Inverter
1200 V
15 A
20 mW
-
3 µA
2.82 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY1B
FR900R12IP4DBPSA1
Infineon Technologies

IGBT MODULE PP IHM I XHP 1 7KV

  • IGBT Type: Trench Field Stop
  • Configuration: Dual Brake Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-PRIME3-1
패키지: -
재고6
Dual Brake Chopper
1200 V
900 A
20 mW
2.05V @ 15V, 900A
5 mA
54 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-PRIME3-1
FF450R12KE4HOSA1
Infineon Technologies

IGBT MOD 1200V 520A 2400W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 520 A
  • Power - Max: 2400 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고63
Half Bridge
1200 V
520 A
2400 W
2.15V @ 15V, 450A
5 mA
28 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FZ2400R17HE4PB9HPSA1
Infineon Technologies

IGBT MODULE 1700V 2400A

  • IGBT Type: Trench Field Stop
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 2400 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 2400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 195 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single Switch
1700 V
2400 A
-
2.3V @ 15V, 2400A
5 mA
195 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
DF1400R12IP4DBOSA1
Infineon Technologies

IGBT MOD 1200V 1400A 7700W

  • IGBT Type: Trench Field Stop
  • Configuration: Single Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 1400 A
  • Power - Max: 7700 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 82 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single Chopper
1200 V
1400 A
7700 W
2.1V @ 15V, 1400A
5 mA
82 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FP50R12KT4PBPSA1
Infineon Technologies

IGBT MOD 1200V 100A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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Three Phase Inverter
1200 V
100 A
20 mW
2.15V @ 15V, 25A
1 mA
1.45 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
F3L200R12N2H3B47BPSA1
Infineon Technologies

IGBT MOD 1200V 200A 20MW ECONO

  • IGBT Type: -
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2-8
패키지: -
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Three Level Inverter
1200 V
200 A
20 mW
2.15V @ 15V, 150A
1 mA
-
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
AG-ECONO2-8
FZ2400R17HP4B28BOSA2
Infineon Technologies

IGBT MODULE 1700V 4800A

  • IGBT Type: Trench Field Stop
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 4800 A
  • Power - Max: 15500 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 195 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고3
Single Switch
1700 V
4800 A
15500 W
2.25V @ 15V, 2400A
5 mA
195 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
F4100R12N2H3FB11BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고45
-
-
-
-
-
-
-
-
-
-
-
-
-