페이지 99 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  99/123
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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXSN50N60BD2
IXYS

IGBT 75A 600V SOT-227B

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Current - Collector Cutoff (Max): 350µA
  • Input Capacitance (Cies) @ Vce: 3.85nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: SOT-227-4, miniBLOC
재고2,128
Single
600V
75A
250W
2.5V @ 15V, 50A
350µA
3.85nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
CM800HA-28H
Powerex Inc.

IGBT MOD SGL 1400V 800A H SER

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 800A
  • Power - Max: 4800W
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 800A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 172nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고7,936
Single
1400V
800A
4800W
3.6V @ 15V, 800A
5mA
172nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
CM100BU-12H
Powerex Inc.

IGBT MOD H-BRDG 600V 100A U SER

  • IGBT Type: -
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 400W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 8.8nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,736
Full Bridge Inverter
600V
100A
400W
3V @ 15V, 100A
1mA
8.8nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APT100GF60JU3
Microsemi Corporation

IGBT 600V 120A 416W SOT227

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
패키지: ISOTOP
재고7,600
Single
600V
120A
416W
2.5V @ 15V, 100A
100µA
4.3nF @ 25V
Standard
No
-
Chassis Mount
ISOTOP
SOT-227
MUBW25-06A6
IXYS

MODULE IGBT CBI E1

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 27.5A
  • Power - Max: 77W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E1
  • Supplier Device Package: E1
패키지: E1
재고6,240
Three Phase Inverter with Brake
600V
27.5A
77W
2.5V @ 15V, 20A
1mA
1.1nF @ 25V
Three Phase Bridge Rectifier
Yes
150°C (TJ)
Chassis Mount
E1
E1
FF650R17IE4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1700V 650A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,136
-
-
-
-
-
-
-
-
-
-
-
-
-
CM100TF-24H
Powerex Inc.

IGBT MOD 6PAC 1200V 100A H SER

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 780W
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 20nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고5,408
Three Phase Inverter
1200V
100A
780W
3.4V @ 15V, 100A
1mA
20nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FF450R06ME3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 450A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,968
-
-
-
-
-
-
-
-
-
-
-
-
-
GSID150A120S6A4
Global Power Technologies Group

SILICON IGBT MODULES

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 275A
  • Power - Max: 1035W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 20.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,288
Single
1200V
275A
1035W
1.9V @ 15V, 150A
1mA
20.2nF @ 25V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
F12-25R12KT4G
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 25A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,176
-
-
-
-
-
-
-
-
-
-
-
-
-
FP35R12U1T4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 35A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,488
-
-
-
-
-
-
-
-
-
-
-
-
-
VS-CPV362M4FPBF
Vishay Semiconductor Diodes Division

IGBT 600V 8.8A 23W IMS-2

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.8A
  • Power - Max: 23W
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 4.8A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 0.34nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 19-SIP (13 Leads), IMS-2
  • Supplier Device Package: IMS-2
패키지: 19-SIP (13 Leads), IMS-2
재고2,592
-
600V
8.8A
23W
1.7V @ 15V, 4.8A
250µA
0.34nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Through Hole
19-SIP (13 Leads), IMS-2
IMS-2
MIAA20WB600TMH
IXYS

MODULE IGBT CBI

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 29A
  • Power - Max: 100W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Current - Collector Cutoff (Max): 1.1mA
  • Input Capacitance (Cies) @ Vce: 0.9nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MiniPack2
  • Supplier Device Package: MiniPack2
패키지: MiniPack2
재고3,664
Three Phase Inverter with Brake
600V
29A
100W
2.7V @ 15V, 20A
1.1mA
0.9nF @ 25V
Three Phase Bridge Rectifier
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
MiniPack2
MiniPack2
FF600R12ME4C
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 600A

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 1060A
  • Power - Max: 4050W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: 37nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고7,024
Half Bridge
1200V
1060A
4050W
2.1V @ 15V, 600A
3mA
37nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot FS100R12KE3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 100A

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 140A
  • Power - Max: 480W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 7.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,096
Single
1200V
140A
480W
2.15V @ 15V, 100A
5mA
7.1nF @ 25V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
hot FF400R06KE3
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 600V 400A

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 500A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고7,104
Half Bridge
600V
500A
1250W
1.9V @ 15V, 400A
5mA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
VS-40MT120UHAPBF
Vishay Semiconductor Diodes Division

IGBT 1200V 80A 463W MTP

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 4.91V @ 15V, 80A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 8.28nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 12-MTP Module
  • Supplier Device Package: MTP
패키지: 12-MTP Module
재고7,408
Half Bridge
1200V
80A
463W
4.91V @ 15V, 80A
250µA
8.28nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
12-MTP Module
MTP
IXXN110N65B4H1
IXYS

IGBT 650V 215A 750W SOT227B

  • IGBT Type: PT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 215A
  • Power - Max: 750W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
  • Current - Collector Cutoff (Max): 50µA
  • Input Capacitance (Cies) @ Vce: 3.65nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: SOT-227-4, miniBLOC
재고7,104
Single
650V
215A
750W
2.1V @ 15V, 110A
50µA
3.65nF @ 25V
Standard
No
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
F411MR12W2M1HB70BPSA1
Infineon Technologies

LOW POWER EASY

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고45
-
-
-
-
-
-
-
-
-
-
-
-
-
PCFMB50W6
KYOCERA AVX

IGBT MODULE, 1IN1, CHOPPER CIRCU

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 181 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4500 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
650 V
50 A
181 W
1.95V @ 15V, 50A
1 mA
4500 pF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
PCFMB200W12
KYOCERA AVX

IGBT MODULE, 1IN1, CHOPPER CIRCU

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: 961 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 19000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
1200 V
200 A
961 W
2V @ 15V, 200A
1 mA
19000 pF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FF600R12ME4B73BPSA1
Infineon Technologies

IGBT MOD 1200V 1200A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 1200 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge
1200 V
1200 A
20 mW
2.1V @ 15V, 600A
3 mA
37 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
NXH40B120MNQ0SNG
onsemi

80KW GENII 1200V 80MOHM SIC MOSF

  • IGBT Type: -
  • Configuration: Dual Boost Chopper
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: 118 W
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: 3.227 nF @ 20 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
패키지: -
Request a Quote
Dual Boost Chopper
-
-
118 W
-
-
3.227 nF @ 20 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
22-PIM/Q0BOOST (55x32.5)
DF300R07PE4B6BOSA1
Infineon Technologies

IGBT MOD 650V 300A 940W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 300 A
  • Power - Max: 940 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Three Phase Inverter
650 V
300 A
940 W
1.95V @ 15V, 300A
1 mA
18.5 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
BSM100GB120DLCKHOSA1
Infineon Technologies

IGBT MOD 1200V 100A 830W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 830 W
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge
1200 V
100 A
830 W
-
-
-
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
NXH35C120L2C2ESG
onsemi

IGBT MODULE, CIB 1200 V, 35 A IG

  • IGBT Type: -
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
  • Current - Collector Cutoff (Max): 250 µA
  • Input Capacitance (Cies) @ Vce: 8.333 nF @ 20 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
  • Supplier Device Package: 26-DIP
패키지: -
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Three Phase Inverter with Brake
1200 V
35 A
20 mW
2.4V @ 15V, 35A
250 µA
8.333 nF @ 20 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Through Hole
26-PowerDIP Module (1.199", 47.20mm)
26-DIP
FP15R06KL4BOMA1
Infineon Technologies

MOD IGBT LOW PWR EASY2-1

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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MIP50R12E2TN-BP
Micro Commercial Co

IGBT MODULES

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Power - Max: 227 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 2000 pF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Three Phase Inverter
1200 V
35 A
227 W
1.95V @ 15V, 35A
1 mA
2000 pF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
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