페이지 97 - 트랜지스터 - IGBT - 모듈 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 모듈

기록 3,436
페이지  97/123
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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7T200CL12B
Infineon Technologies

MOD IGBT 1200V 200A POWIR 62

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 390A
  • Power - Max: 1060W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 200A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 22.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 62 Module
  • Supplier Device Package: POWIR? 62
패키지: POWIR? 62 Module
재고5,408
Single
1200V
390A
1060W
2.2V @ 15V, 200A
2mA
22.5nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR? 62 Module
POWIR? 62
IRG5K100HH06E
Infineon Technologies

MOD IGBT 600V 100A POWIR ECO 2

  • IGBT Type: -
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 170A
  • Power - Max: 405W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 6.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR ECO 2? Module
  • Supplier Device Package: POWIR ECO 2?
패키지: POWIR ECO 2? Module
재고5,120
Full Bridge Inverter
600V
170A
405W
2.1V @ 15V, 100A
1mA
6.2nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
POWIR ECO 2? Module
POWIR ECO 2?
VIO125-12P1
IXYS

MOD IGBT DIODE SGL 1200V ECOPAC2

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 138A
  • Power - Max: 568W
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 125A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
패키지: ECO-PAC2
재고6,608
Single
1200V
138A
568W
3.4V @ 15V, 125A
5mA
5.5nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC2
ECO-PAC2
FMG2G50US120
Fairchild/ON Semiconductor

IGBT POWER MOD 1200V 50A 7PM-GA

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Power - Max: 320W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 7PM-GA
  • Supplier Device Package: 7PM-GA
패키지: 7PM-GA
재고6,752
Half Bridge
1200V
50A
320W
3V @ 15V, 50A
3mA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
7PM-GA
7PM-GA
FF1000R17IE4DP_B2
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1700V 1000A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,224
-
-
-
-
-
-
-
-
-
-
-
-
-
CM150DU-24F
Powerex Inc.

IGBT MOD DUAL 1200V 150A F SER

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 600W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 59nF @ 10V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,896
Half Bridge
1200V
150A
600W
2.4V @ 15V, 150A
1mA
59nF @ 10V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
hot FF300R12ME4
Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 600V 300A

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,112
-
-
-
-
-
-
-
-
-
-
-
-
-
GSID080A120B1A5
Global Power Technologies Group

SILICON IGBT MODULES

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 1710W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 7nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고5,584
Single
1200V
160A
1710W
2V @ 15V, 80A
1mA
7nF @ 25V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
NXH80T120L2Q0SG
ON Semiconductor

MODULE PIM 80A 1200V PIM20

  • IGBT Type: -
  • Configuration: T-Type
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 65A
  • Power - Max: 146W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 80A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: 1.99nF @ 20V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: Module
  • Supplier Device Package: 20-PIM/Q0PACK (55x32.5)
패키지: Module
재고3,776
T-Type
1200V
65A
146W
2.8V @ 15V, 80A
100µA
1.99nF @ 20V
Standard
Yes
-40°C ~ 150°C (TJ)
Through Hole
Module
20-PIM/Q0PACK (55x32.5)
APT100GT120JU3
Microsemi Corporation

IGBT 1200V 140A 480W SOT227

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 140A
  • Power - Max: 480W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 7.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
패키지: ISOTOP
재고7,664
Single
1200V
140A
480W
2.1V @ 15V, 100A
5mA
7.2nF @ 25V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP
SOT-227
IXYN80N90C3H1
IXYS

IGBT 900V 115A 500W C3 SOT-227

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 115A
  • Power - Max: 500W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
  • Current - Collector Cutoff (Max): 25µA
  • Input Capacitance (Cies) @ Vce: 4.55nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: SOT-227-4, miniBLOC
재고5,472
Single
900V
115A
500W
2.7V @ 15V, 80A
25µA
4.55nF @ 25V
Standard
No
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
FF900R12IE4PBOSA1
Infineon Technologies

IGBT MOD 1200V 900A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고9
Half Bridge
1200 V
900 A
20 mW
2.1V @ 15V, 900A
5 mA
54 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FS100R12N2T7B15BPSA1
Infineon Technologies

LOW POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
  • Current - Collector Cutoff (Max): 10 µA
  • Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
재고42
Full Bridge Inverter
1200 V
100 A
20 mW
1.8V @ 15V, 100A
10 µA
21.7 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-ECONO2B
F3L200R07W2S5FB11BOMA1
Infineon Technologies

IGBT MODULE LOW POWER EASY

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 95 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 14.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2B
패키지: -
Request a Quote
Three Level Inverter
650 V
95 A
20 mW
1.38V @ 15V, 100A
1 mA
14.3 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY2B
NXH80T120L2Q0P2TG
onsemi

IGBT MODULE 1200V 80A TNPC PIM20

  • IGBT Type: Trench Field Stop
  • Configuration: Three Level Inverter
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250 µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 20-PIM/Q0PACK (55x32.5)
패키지: -
Request a Quote
Three Level Inverter
-
-
-
1.75V @ 15V, 50A
250 µA
-
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
20-PIM/Q0PACK (55x32.5)
BSM35GD120DLCE3224BOSA1
Infineon Technologies

IGBT MOD 1200V 70A 280W

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 70 A
  • Power - Max: 280 W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
  • Current - Collector Cutoff (Max): 80 µA
  • Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge
1200 V
70 A
280 W
2.6V @ 15V, 35A
80 µA
2 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
FF150R12KE3B8BDLA1
Infineon Technologies

IGBT MODULE

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 225 A
  • Power - Max: 1250 W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MM
패키지: -
Request a Quote
Half Bridge
1200 V
225 A
1250 W
3.7V @ 15V, 150A
5 mA
11 nF @ 25 V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
AG-62MM
DF100R07W1H5FPB53BPSA1
Infineon Technologies

IGBT MODULE

  • IGBT Type: -
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
  • Current - Collector Cutoff (Max): 40 µA
  • Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
패키지: -
Request a Quote
Half Bridge Inverter
650 V
40 A
-
1.55V @ 15V, 25A
40 µA
2.8 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1B
P3000ZL45X168APTHPSA1
Infineon Technologies

PRESS PACK IGBT BG-P16826K-1

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 4500 V
  • Current - Collector (Ic) (Max): 3000 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3000A
  • Current - Collector Cutoff (Max): 200 µA
  • Input Capacitance (Cies) @ Vce: 620 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: BG-P16826K-1
패키지: -
Request a Quote
Single
4500 V
3000 A
-
2.5V @ 15V, 3000A
200 µA
620 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
DO-200AE
BG-P16826K-1
FF600R17ME4PBOSA1
Infineon Technologies

IGBT MODULE VCES 1200V 600A

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고18
Half Bridge Inverter
1700 V
600 A
-
2.3V @ 15V, 600A
1 mA
48 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
FS200R10W3S7B11BPSA1
Infineon Technologies

LOW POWER EASY

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 950 V
  • Current - Collector (Ic) (Max): 130 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 150A
  • Current - Collector Cutoff (Max): 53 µA
  • Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY3B
패키지: -
재고18
Full Bridge Inverter
950 V
130 A
20 mW
1.98V @ 15V, 150A
53 µA
13 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY3B
F4100R12KS4BOSA1
Infineon Technologies

IGBT MOD 1200V 130A 660W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 130 A
  • Power - Max: 660 W
  • Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
Three Phase Inverter
1200 V
130 A
660 W
3.75V @ 15V, 100A
5 mA
6.8 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
FS75R12N2T7B15BPSA2
Infineon Technologies

LOW POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
  • Current - Collector Cutoff (Max): 14 µA
  • Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
Request a Quote
Full Bridge Inverter
1200 V
75 A
20 mW
1.8V @ 15V, 75A
14 µA
15.1 nF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-ECONO2B
FF900R12ME7PB11BPSA1
Infineon Technologies

MEDIUM POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
  • Current - Collector Cutoff (Max): 100 µA
  • Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONOD
패키지: -
재고39
Half Bridge
1200 V
900 A
-
1.8V @ 15V, 900A
100 µA
122 nF @ 25 V
Standard
No
-40°C ~ 175°C
Chassis Mount
Module
AG-ECONOD
2PS06017E32G28213NOSA1
Infineon Technologies

IGBT MODULE 1100VDC 325A

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -25°C ~ 55°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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2 Independent
-
-
-
-
-
-
Standard
Yes
-25°C ~ 55°C
Chassis Mount
Module
Module
FF400R12KT3EHOSA1
Infineon Technologies

IGBT MOD 1200V 580A 2000W

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 580 A
  • Power - Max: 2000 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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2 Independent
1200 V
580 A
2000 W
2.15V @ 15V, 400A
5 mA
28 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
F4150R17ME4B11BPSA2
Infineon Technologies

MEDIUM POWER ECONO AG-ECONOD-311

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 230 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONOD-6
패키지: -
재고30
Full Bridge Inverter
1700 V
230 A
-
2.3V @ 15V, 150A
3 mA
12 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONOD-6
PCHMB100W12
KYOCERA AVX

IGBT MODULE, 1IN1, CHOPPER CIRCU

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 403 W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 10000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
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Single
1200 V
100 A
403 W
2V @ 15V, 100A
1 mA
10000 pF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module