페이지 102 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  102/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PH42UD-EPBF
Infineon Technologies

IGBT 1200V ULTRA FAST TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,528
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGP6650DPBF
Infineon Technologies

IGBT 600V 80A 306W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
  • Power - Max: 306W
  • Switching Energy: 300µJ (on), 630µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 40ns/105ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고2,848
600V
80A
105A
1.95V @ 15V, 35A
306W
300µJ (on), 630µJ (off)
Standard
75nC
40ns/105ns
400V, 35A, 10 Ohm, 15V
50ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
NGTB30N120LWG
ON Semiconductor

IGBT 1200V 30A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: 560W
  • Switching Energy: 4.4mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 420nC
  • Td (on/off) @ 25°C: 136ns/360ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,496
1200V
60A
240A
2.2V @ 15V, 30A
560W
4.4mJ (on), 1mJ (off)
Standard
420nC
136ns/360ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
RJH60F4DPK-00#T0
Renesas Electronics America

IGBT 600V 60A 235.8W TO-3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 30A
  • Power - Max: 235.8W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 45ns/85ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고2,784
600V
60A
-
1.82V @ 15V, 30A
235.8W
-
Standard
-
45ns/85ns
400V, 30A, 5 Ohm, 15V
140ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
RJH60D5DPK-00#T0
Renesas Electronics America

IGBT 600V 75A 200W TO3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 37A
  • Power - Max: 200W
  • Switching Energy: 650µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: 50ns/135ns
  • Test Condition: 300V, 37A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고6,608
600V
75A
-
2.2V @ 15V, 37A
200W
650µJ (on), 400µJ (off)
Standard
78nC
50ns/135ns
300V, 37A, 5 Ohm, 15V
100ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
TIG056BF
ON Semiconductor

IGBT 400V 30W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 240A
  • Power - Max: 30W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 46ns/140ns
  • Test Condition: 320V, 240A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FI(LS)
패키지: TO-220-3 Full Pack
재고3,216
430V
-
240A
5V @ 15V, 240A
30W
-
Standard
-
46ns/140ns
320V, 240A, 10 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FI(LS)
HGT1S2N120CN
Fairchild/ON Semiconductor

IGBT 1200V 13A 104W I2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
  • Power - Max: 104W
  • Switching Energy: 96µJ (on), 355µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 25ns/205ns
  • Test Condition: 960V, 2.6A, 51 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고7,200
1200V
13A
20A
2.4V @ 15V, 2.6A
104W
96µJ (on), 355µJ (off)
Standard
30nC
25ns/205ns
960V, 2.6A, 51 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
hot FGH60N6S2
Fairchild/ON Semiconductor

IGBT 600V 75A 625W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 320A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 625W
  • Switching Energy: 400µJ (on), 310µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 18ns/70ns
  • Test Condition: 390V, 40A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고103,464
600V
75A
320A
2.5V @ 15V, 40A
625W
400µJ (on), 310µJ (off)
Standard
140nC
18ns/70ns
390V, 40A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IRGC4660B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고2,848
600V
48A
-
-
-
-
Standard
-
-
-
45ns
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
IGP15N60TXKSA1
Infineon Technologies

IGBT 600V 30A 130W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 130W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 17ns/188ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고3,840
600V
30A
45A
2.05V @ 15V, 15A
130W
570µJ
Standard
87nC
17ns/188ns
400V, 15A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IXGK300N60B3
IXYS

IGBT 600V 1000W TO264AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,552
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGX55N120A3H1
IXYS

IGBT 1200V 125A 460W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 125A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
  • Power - Max: 460W
  • Switching Energy: 5.1mJ (on), 13.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 185nC
  • Td (on/off) @ 25°C: 23ns/365ns
  • Test Condition: 960V, 55A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고5,616
1200V
125A
400A
2.3V @ 15V, 55A
460W
5.1mJ (on), 13.3mJ (off)
Standard
185nC
23ns/365ns
960V, 55A, 3 Ohm, 15V
200ns
-
Through Hole
TO-247-3
PLUS247?-3
IXBT6N170
IXYS

IGBT 1700V 12A 75W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 36A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A
  • Power - Max: 75W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.08µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,488
1700V
12A
36A
3.4V @ 15V, 6A
75W
-
Standard
17nC
-
-
1.08µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot NGB8207BNT4G
Littelfuse Inc.

IGBT 365V 20A 165W D2PAK3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 365V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 4V, 20A
  • Power - Max: 165W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고195,504
365V
20A
50A
2.6V @ 4V, 20A
165W
-
Logic
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXBT16N170A
IXYS

IGBT 1700V 16A 150W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 15ns/160ns
  • Test Condition: 1360V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 360ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고4,816
1700V
16A
40A
6V @ 15V, 10A
150W
1.2mJ (off)
Standard
65nC
15ns/160ns
1360V, 10A, 10 Ohm, 15V
360ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot HGTG18N120BND
Fairchild/ON Semiconductor

IGBT 1200V 54A 390W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
  • Power - Max: 390W
  • Switching Energy: 1.9mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 23ns/170ns
  • Test Condition: 960V, 18A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 75ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고26,340
1200V
54A
160A
2.7V @ 15V, 18A
390W
1.9mJ (on), 1.8mJ (off)
Standard
165nC
23ns/170ns
960V, 18A, 3 Ohm, 15V
75ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
STGD3NB60FT4
STMicroelectronics

IGBT 600V 6A 60W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
  • Power - Max: 60W
  • Switching Energy: 125µJ (off)
  • Input Type: Standard
  • Gate Charge: 16nC
  • Td (on/off) @ 25°C: 12.5ns/105ns
  • Test Condition: 480V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,752
600V
6A
24A
2.4V @ 15V, 3A
60W
125µJ (off)
Standard
16nC
12.5ns/105ns
480V, 3A, 10 Ohm, 15V
45ns
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IKP10N60TXKSA1
Infineon Technologies

IGBT 600V 20A 110W TO220-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
  • Power - Max: 110W
  • Switching Energy: 430µJ
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 12ns/215ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고8,460
600V
20A
30A
2.05V @ 15V, 10A
110W
430µJ
Standard
62nC
12ns/215ns
400V, 10A, 23 Ohm, 15V
115ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
STGP8NC60KD
STMicroelectronics

IGBT 600V 15A 65W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
  • Power - Max: 65W
  • Switching Energy: 55µJ (on), 85µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 17ns/72ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 23.5ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고21,780
600V
15A
30A
2.75V @ 15V, 3A
65W
55µJ (on), 85µJ (off)
Standard
19nC
17ns/72ns
390V, 3A, 10 Ohm, 15V
23.5ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot STGB10NB37LZT4
STMicroelectronics

IGBT 440V 20A 125W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
  • Power - Max: 125W
  • Switching Energy: 2.4mJ (on), 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 1.3µs/8µs
  • Test Condition: 328V, 10A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고177,384
440V
20A
40A
1.8V @ 4.5V, 10A
125W
2.4mJ (on), 5mJ (off)
Standard
28nC
1.3µs/8µs
328V, 10A, 1 kOhm, 5V
-
-65°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IGW50N60TPXKSA1
Infineon Technologies

IGBT 600V 80A 319.2W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 319.2W
  • Switching Energy: 1.53mJ (on), 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 249nC
  • Td (on/off) @ 25°C: 20ns/215ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,424
600V
80A
150A
1.8V @ 15V, 50A
319.2W
1.53mJ (on), 850µJ (off)
Standard
249nC
20ns/215ns
400V, 50A, 7 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
RJH1DF7RDPQ-80-T2
Renesas

RJH1DF7 - INSULATED GATE BIPOLAR

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
  • Power - Max: 250 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 58ns/144ns
  • Test Condition: 600V, 35A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
Request a Quote
1350 V
60 A
-
2.55V @ 15V, 35A
250 W
-
Standard
-
58ns/144ns
600V, 35A, 5Ohm, 15V
-
150°C (TJ)
Through Hole
TO-247-3
TO-247
IKW40N65RH5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 74A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 74 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250 W
  • Switching Energy: 160µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 18ns/165ns
  • Test Condition: 400V, 20A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
재고648
650 V
74 A
160 A
2.1V @ 15V, 40A
250 W
160µJ (on), 120µJ (off)
Standard
95 nC
18ns/165ns
400V, 20A, 15Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
STGWA40IH65DF
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V 40

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 238 W
  • Switching Energy: 190µJ (off)
  • Input Type: Standard
  • Gate Charge: 114 nC
  • Td (on/off) @ 25°C: -/210ns
  • Test Condition: 400V, 40A, 22Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
Request a Quote
650 V
80 A
120 A
2V @ 15V, 40A
238 W
190µJ (off)
Standard
114 nC
-/210ns
400V, 40A, 22Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
RJP3034DPP-90-T2F
Renesas Electronics Corporation

HIGH SPEED IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HGTD7N60B3S
Harris Corporation

14A, 600V, UFS N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 14 A
  • Current - Collector Pulsed (Icm): 56 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
  • Power - Max: 60 W
  • Switching Energy: 72µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 26ns/130ns
  • Test Condition: 480V, 7A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: -
Request a Quote
600 V
14 A
56 A
2.1V @ 15V, 7A
60 W
72µJ (on), 120µJ (off)
Standard
37 nC
26ns/130ns
480V, 7A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
SIGC15T60SEX7SA1
Infineon Technologies

IGBT 3 CHIP 600V

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
30 A
90 A
2.05V @ 15V, 30A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
HGTH20N50E1D
Harris Corporation

20A, 500V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 35 A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
  • Power - Max: 100 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 33 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3 Isolated Tab, TO-218AC
  • Supplier Device Package: TO-218 Isolated
패키지: -
Request a Quote
500 V
20 A
35 A
3.2V @ 20V, 35A
100 W
-
Standard
33 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-218-3 Isolated Tab, TO-218AC
TO-218 Isolated