페이지 99 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

IRGP4269D-EPBF

Infineon Technologies

IGBT 600V TO247 COPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,200

-

IRG7CH50UED

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,848

-

IRG7CH35UED

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,512

-

SGI02N120XKSA1

Infineon Technologies

IGBT 1200V 6.2A 62W TO262-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 6.2A
Current - Collector Pulsed (Icm): 9.6A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
Power - Max: 62W
Switching Energy: 220µJ
Input Type: Standard
Gate Charge: 11nC
Td (on/off) @ 25°C: 23ns/260ns
Test Condition: 800V, 2A, 91 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: PG-TO262-3

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고7,904

1200V

6.2A

9.6A

3.6V @ 15V, 2A

62W

220µJ

Standard

11nC

23ns/260ns

800V, 2A, 91 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

PG-TO262-3

SGD06N60BUMA1

Infineon Technologies

IGBT 600V 12A 68W TO252-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 12A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Power - Max: 68W
Switching Energy: 215µJ
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 25ns/220ns
Test Condition: 400V, 6A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,192

600V

12A

24A

2.4V @ 15V, 6A

68W

215µJ

Standard

32nC

25ns/220ns

400V, 6A, 50 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PG-TO252-3

IRG4BC30K

Infineon Technologies

IGBT 600V 28A 100W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 58A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Power - Max: 100W
Switching Energy: 360µJ (on), 510µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 26ns/130ns
Test Condition: 480V, 16A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고1,761,912

600V

28A

58A

2.7V @ 15V, 16A

100W

360µJ (on), 510µJ (off)

Standard

67nC

26ns/130ns

480V, 16A, 23 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IXGT31N60D1

IXYS

IGBT 600V 60A 150W TO268

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
Power - Max: 150W
Switching Energy: 6mJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 15ns/400ns
Test Condition: 480V, 31A, 10 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고2,656

600V

60A

80A

1.7V @ 15V, 31A

150W

6mJ (off)

Standard

80nC

15ns/400ns

480V, 31A, 10 Ohm, 15V

25ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

IXGH20N60A

IXYS

IGBT 600V 40A 150W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Power - Max: 150W
Switching Energy: 1.5mJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 20A, 82 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고34,008

600V

40A

80A

3V @ 15V, 20A

150W

1.5mJ (off)

Standard

100nC

100ns/600ns

480V, 20A, 82 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

NGD15N41CLT4

ON Semiconductor

IGBT 440V 15A 107W DPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 440V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
Power - Max: 107W
Switching Energy: -
Input Type: Logic
Gate Charge: -
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 6.5A, 1 kOhm
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,088

440V

15A

50A

2.2V @ 4V, 10A

107W

-

Logic

-

-/4µs

300V, 6.5A, 1 kOhm

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

IRG4PC30FPBF

Infineon Technologies

IGBT 600V 31A 100W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 31A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Power - Max: 100W
Switching Energy: 230µJ (on), 1.18mJ (off)
Input Type: Standard
Gate Charge: 51nC
Td (on/off) @ 25°C: 21ns/200ns
Test Condition: 480V, 17A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고23,400

600V

31A

120A

1.8V @ 15V, 17A

100W

230µJ (on), 1.18mJ (off)

Standard

51nC

21ns/200ns

480V, 17A, 23 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

IXYX100N120B3

IXYS

IGBT 1200V 188A 1150W PLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 225A
Current - Collector Pulsed (Icm): 530A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Power - Max: 1150W
Switching Energy: 7.7mJ (on), 7.1mJ (off)
Input Type: Standard
Gate Charge: 250nC
Td (on/off) @ 25°C: 30ns/153ns
Test Condition: 600V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고6,576

1200V

225A

530A

2.6V @ 15V, 100A

1150W

7.7mJ (on), 7.1mJ (off)

Standard

250nC

30ns/153ns

600V, 100A, 1 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

PLUS247?-3

IXXR100N60B3H1

IXYS

IGBT 600V 145A 400W ISOPLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 145A
Current - Collector Pulsed (Icm): 440A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Power - Max: 400W
Switching Energy: 1.9mJ (on), 2mJ (off)
Input Type: Standard
Gate Charge: 143nC
Td (on/off) @ 25°C: 30ns/120ns
Test Condition: 360V, 70A, 2 Ohm, 15V
Reverse Recovery Time (trr): 140ns
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247?

패키지: TO-247-3

재고5,808

600V

145A

440A

1.8V @ 15V, 70A

400W

1.9mJ (on), 2mJ (off)

Standard

143nC

30ns/120ns

360V, 70A, 2 Ohm, 15V

140ns

-

Through Hole

TO-247-3

ISOPLUS247?

IXYP15N65C3

IXYS

IGBT 650V 38A 200W TO220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 38A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: 200W
Switching Energy: 270µJ (on), 230µJ (off)
Input Type: Standard
Gate Charge: 19nC
Td (on/off) @ 25°C: 15ns/68ns
Test Condition: 400V, 15A, 20 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고7,312

650V

38A

80A

2.5V @ 15V, 15A

200W

270µJ (on), 230µJ (off)

Standard

19nC

15ns/68ns

400V, 15A, 20 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220AB

APT80GA60LD40

Microsemi Corporation

IGBT 600V 143A 625W TO264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 143A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
Power - Max: 625W
Switching Energy: 840µJ (on), 751µJ (off)
Input Type: Standard
Gate Charge: 230nC
Td (on/off) @ 25°C: 23ns/158ns
Test Condition: 400V, 47A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): 22ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264

패키지: TO-264-3, TO-264AA

재고4,064

600V

143A

240A

2.5V @ 15V, 47A

625W

840µJ (on), 751µJ (off)

Standard

230nC

23ns/158ns

400V, 47A, 4.7 Ohm, 15V

22ns

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264

STGP30NC60K

STMicroelectronics

IGBT 600V 60A 185W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 125A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Power - Max: 185W
Switching Energy: 350µJ (on), 435µJ (off)
Input Type: Standard
Gate Charge: 96nC
Td (on/off) @ 25°C: 29ns/120ns
Test Condition: 480V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고16,716

600V

60A

125A

2.7V @ 15V, 20A

185W

350µJ (on), 435µJ (off)

Standard

96nC

29ns/120ns

480V, 20A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IHW20N65R5XKSA1

Infineon Technologies

IGBT 650V 40A 150W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Power - Max: 150W
Switching Energy: 300µJ (on), 70µJ (off)
Input Type: Standard
Gate Charge: 97nC
Td (on/off) @ 25°C: 24ns/250ns
Test Condition: 400V, 10A, 20 Ohm, 15V
Reverse Recovery Time (trr): 68ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고6,216

650V

40A

60A

1.7V @ 15V, 20A

150W

300µJ (on), 70µJ (off)

Standard

97nC

24ns/250ns

400V, 10A, 20 Ohm, 15V

68ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IXBH16N170

IXYS

IGBT 1700V 40A 250W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A
Power - Max: 250W
Switching Energy: -
Input Type: Standard
Gate Charge: 72nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.32µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)

패키지: TO-247-3

재고9,132

1700V

40A

120A

3.3V @ 15V, 16A

250W

-

Standard

72nC

-

1.32µs

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXBH)

IXYK120N120C3

IXYS

IGBT 1200V 240A 1500W TO264

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 240A
Current - Collector Pulsed (Icm): 700A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Power - Max: 1500W
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Input Type: Standard
Gate Charge: 412nC
Td (on/off) @ 25°C: 35ns/176ns
Test Condition: 600V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXYK)

패키지: TO-264-3, TO-264AA

재고8,520

1200V

240A

700A

3.2V @ 15V, 120A

1500W

6.75mJ (on), 5.1mJ (off)

Standard

412nC

35ns/176ns

600V, 100A, 1 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264 (IXYK)

HGTP10N50E1

Harris Corporation

10A, 500V, N-CHANNEL IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): 17.5 A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
Power - Max: 60 W
Switching Energy: -
Input Type: Standard
Gate Charge: 19 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: -

Request a Quote

500 V

10 A

17.5 A

3.2V @ 20V, 17.5A

60 W

-

Standard

19 nC

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

XGS8206AUI

Littelfuse Inc.

IGBT N-CH 20A D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

63-8035

Infineon Technologies

IGBT CHIP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IKW25N120T2FKSA1

Infineon Technologies

IGBT TRENCH 1200V 50A TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Power - Max: 349 W
Switching Energy: 2.9mJ
Input Type: Standard
Gate Charge: 120 nC
Td (on/off) @ 25°C: 27ns/265ns
Test Condition: 600V, 25A, 16.4Ohm, 15V
Reverse Recovery Time (trr): 195 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1

패키지: -

재고360

1200 V

50 A

100 A

2.2V @ 15V, 25A

349 W

2.9mJ

Standard

120 nC

27ns/265ns

600V, 25A, 16.4Ohm, 15V

195 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-1

MGP20N14CL

onsemi

IGBT 135V 20A TO220-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 135 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: -
Power - Max: 150 W
Switching Energy: -
Input Type: Logic
Gate Charge: 20 nC
Td (on/off) @ 25°C: -
Test Condition: 68V, 20A, 9.1Ohm, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: -

Request a Quote

135 V

20 A

60 A

-

150 W

-

Logic

20 nC

-

68V, 20A, 9.1Ohm, 5V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

AOKS40B65H2AL

Alpha & Omega Semiconductor Inc.

IGBT 40A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Power - Max: 260 W
Switching Energy: 1.17mJ (on), 540µJ (off)
Input Type: Standard
Gate Charge: 61 nC
Td (on/off) @ 25°C: 30ns/117ns
Test Condition: 400V, 40A, 7.5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: -

Request a Quote

650 V

80 A

120 A

2.6V @ 15V, 40A

260 W

1.17mJ (on), 540µJ (off)

Standard

61 nC

30ns/117ns

400V, 40A, 7.5Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

RJP4002ASA-00-Q0

Renesas Electronics Corporation

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IXGM17N100A

IXYS

IGBT 1000V 34A 150W TO204AE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 34 A
Current - Collector Pulsed (Icm): 68 A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Power - Max: 150 W
Switching Energy: 3mJ (off)
Input Type: Standard
Gate Charge: 120 nC
Td (on/off) @ 25°C: 100ns/500ns
Test Condition: 800V, 17A, 82Ohm, 15V
Reverse Recovery Time (trr): 200 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Supplier Device Package: TO-204AE

패키지: -

Request a Quote

1000 V

34 A

68 A

4V @ 15V, 17A

150 W

3mJ (off)

Standard

120 nC

100ns/500ns

800V, 17A, 82Ohm, 15V

200 ns

-55°C ~ 150°C (TJ)

Through Hole

TO-204AE

IKQ150N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 160A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 160 A
Current - Collector Pulsed (Icm): 600 A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
Power - Max: 621 W
Switching Energy: 5.8mJ (on), 5.4mJ (off)
Input Type: Standard
Gate Charge: 301 nC
Td (on/off) @ 25°C: 45ns/341ns
Test Condition: 400V, 150A, 10Ohm, 15V
Reverse Recovery Time (trr): 84 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-46

패키지: -

재고528

650 V

160 A

600 A

1.65V @ 15V, 150A

621 W

5.8mJ (on), 5.4mJ (off)

Standard

301 nC

45ns/341ns

400V, 150A, 10Ohm, 15V

84 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-46

STGWA40HP65FB2

STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 4

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 72 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: 227 W
Switching Energy: 410µJ (off)
Input Type: Standard
Gate Charge: 153 nC
Td (on/off) @ 25°C: -/125ns
Test Condition: 400V, 40A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 140 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads

패키지: -

재고129

650 V

72 A

120 A

2V @ 15V, 40A

227 W

410µJ (off)

Standard

153 nC

-/125ns

400V, 40A, 4.7Ohm, 15V

140 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247 Long Leads

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGP4269D-EPBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7CH50UED	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,848	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7CH35UED	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,512	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SGI02N120XKSA1	Infineon Technologies	IGBT 1200V 6.2A 62W TO262-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 6.2A Current - Collector Pulsed (Icm): 9.6A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A Power - Max: 62W Switching Energy: 220µJ Input Type: Standard Gate Charge: 11nC Td (on/off) @ 25°C: 23ns/260ns Test Condition: 800V, 2A, 91 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: PG-TO262-3	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고7,904	1200V	6.2A	9.6A	3.6V @ 15V, 2A	62W	220µJ	Standard	11nC	23ns/260ns	800V, 2A, 91 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	PG-TO262-3
SGD06N60BUMA1	Infineon Technologies	IGBT 600V 12A 68W TO252-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A Power - Max: 68W Switching Energy: 215µJ Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 25ns/220ns Test Condition: 400V, 6A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,192	600V	12A	24A	2.4V @ 15V, 6A	68W	215µJ	Standard	32nC	25ns/220ns	400V, 6A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3
IRG4BC30K	Infineon Technologies	IGBT 600V 28A 100W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고1,761,912	600V	28A	58A	2.7V @ 15V, 16A	100W	360µJ (on), 510µJ (off)	Standard	67nC	26ns/130ns	480V, 16A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGT31N60D1	IXYS	IGBT 600V 60A 150W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A Power - Max: 150W Switching Energy: 6mJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 15ns/400ns Test Condition: 480V, 31A, 10 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고2,656	600V	60A	80A	1.7V @ 15V, 31A	150W	6mJ (off)	Standard	80nC	15ns/400ns	480V, 31A, 10 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IXGH20N60A	IXYS	IGBT 600V 40A 150W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 150W Switching Energy: 1.5mJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 100ns/600ns Test Condition: 480V, 20A, 82 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고34,008	600V	40A	80A	3V @ 15V, 20A	150W	1.5mJ (off)	Standard	100nC	100ns/600ns	480V, 20A, 82 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
NGD15N41CLT4	ON Semiconductor	IGBT 440V 15A 107W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 440V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A Power - Max: 107W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: -/4µs Test Condition: 300V, 6.5A, 1 kOhm Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,088	440V	15A	50A	2.2V @ 4V, 10A	107W	-	Logic	-	-/4µs	300V, 6.5A, 1 kOhm	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
IRG4PC30FPBF	Infineon Technologies	IGBT 600V 31A 100W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 230µJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 480V, 17A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고23,400	600V	31A	120A	1.8V @ 15V, 17A	100W	230µJ (on), 1.18mJ (off)	Standard	51nC	21ns/200ns	480V, 17A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IXYX100N120B3	IXYS	IGBT 1200V 188A 1150W PLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 225A Current - Collector Pulsed (Icm): 530A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A Power - Max: 1150W Switching Energy: 7.7mJ (on), 7.1mJ (off) Input Type: Standard Gate Charge: 250nC Td (on/off) @ 25°C: 30ns/153ns Test Condition: 600V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고6,576	1200V	225A	530A	2.6V @ 15V, 100A	1150W	7.7mJ (on), 7.1mJ (off)	Standard	250nC	30ns/153ns	600V, 100A, 1 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	PLUS247?-3
IXXR100N60B3H1	IXYS	IGBT 600V 145A 400W ISOPLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 145A Current - Collector Pulsed (Icm): 440A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Power - Max: 400W Switching Energy: 1.9mJ (on), 2mJ (off) Input Type: Standard Gate Charge: 143nC Td (on/off) @ 25°C: 30ns/120ns Test Condition: 360V, 70A, 2 Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247?	패키지: TO-247-3	재고5,808	600V	145A	440A	1.8V @ 15V, 70A	400W	1.9mJ (on), 2mJ (off)	Standard	143nC	30ns/120ns	360V, 70A, 2 Ohm, 15V	140ns	-	Through Hole	TO-247-3	ISOPLUS247?
IXYP15N65C3	IXYS	IGBT 650V 38A 200W TO220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 38A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 200W Switching Energy: 270µJ (on), 230µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 15ns/68ns Test Condition: 400V, 15A, 20 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고7,312	650V	38A	80A	2.5V @ 15V, 15A	200W	270µJ (on), 230µJ (off)	Standard	19nC	15ns/68ns	400V, 15A, 20 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB
APT80GA60LD40	Microsemi Corporation	IGBT 600V 143A 625W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 143A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A Power - Max: 625W Switching Energy: 840µJ (on), 751µJ (off) Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 23ns/158ns Test Condition: 400V, 47A, 4.7 Ohm, 15V Reverse Recovery Time (trr): 22ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	패키지: TO-264-3, TO-264AA	재고4,064	600V	143A	240A	2.5V @ 15V, 47A	625W	840µJ (on), 751µJ (off)	Standard	230nC	23ns/158ns	400V, 47A, 4.7 Ohm, 15V	22ns	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264
STGP30NC60K	STMicroelectronics	IGBT 600V 60A 185W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 125A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Power - Max: 185W Switching Energy: 350µJ (on), 435µJ (off) Input Type: Standard Gate Charge: 96nC Td (on/off) @ 25°C: 29ns/120ns Test Condition: 480V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고16,716	600V	60A	125A	2.7V @ 15V, 20A	185W	350µJ (on), 435µJ (off)	Standard	96nC	29ns/120ns	480V, 20A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IHW20N65R5XKSA1	Infineon Technologies	IGBT 650V 40A 150W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Power - Max: 150W Switching Energy: 300µJ (on), 70µJ (off) Input Type: Standard Gate Charge: 97nC Td (on/off) @ 25°C: 24ns/250ns Test Condition: 400V, 10A, 20 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고6,216	650V	40A	60A	1.7V @ 15V, 20A	150W	300µJ (on), 70µJ (off)	Standard	97nC	24ns/250ns	400V, 10A, 20 Ohm, 15V	68ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IXBH16N170	IXYS	IGBT 1700V 40A 250W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A Power - Max: 250W Switching Energy: - Input Type: Standard Gate Charge: 72nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.32µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	패키지: TO-247-3	재고9,132	1700V	40A	120A	3.3V @ 15V, 16A	250W	-	Standard	72nC	-	-	1.32µs	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXBH)
IXYK120N120C3	IXYS	IGBT 1200V 240A 1500W TO264 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 700A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A Power - Max: 1500W Switching Energy: 6.75mJ (on), 5.1mJ (off) Input Type: Standard Gate Charge: 412nC Td (on/off) @ 25°C: 35ns/176ns Test Condition: 600V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXYK)	패키지: TO-264-3, TO-264AA	재고8,520	1200V	240A	700A	3.2V @ 15V, 120A	1500W	6.75mJ (on), 5.1mJ (off)	Standard	412nC	35ns/176ns	600V, 100A, 1 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXYK)
HGTP10N50E1	Harris Corporation	10A, 500V, N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 17.5 A Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A Power - Max: 60 W Switching Energy: - Input Type: Standard Gate Charge: 19 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: -	Request a Quote	500 V	10 A	17.5 A	3.2V @ 20V, 17.5A	60 W	-	Standard	19 nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
XGS8206AUI	Littelfuse Inc.	IGBT N-CH 20A D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
63-8035	Infineon Technologies	IGBT CHIP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IKW25N120T2FKSA1	Infineon Technologies	IGBT TRENCH 1200V 50A TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: 349 W Switching Energy: 2.9mJ Input Type: Standard Gate Charge: 120 nC Td (on/off) @ 25°C: 27ns/265ns Test Condition: 600V, 25A, 16.4Ohm, 15V Reverse Recovery Time (trr): 195 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	패키지: -	재고360	1200 V	50 A	100 A	2.2V @ 15V, 25A	349 W	2.9mJ	Standard	120 nC	27ns/265ns	600V, 25A, 16.4Ohm, 15V	195 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
MGP20N14CL	onsemi	IGBT 135V 20A TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 135 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: - Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: 20 nC Td (on/off) @ 25°C: - Test Condition: 68V, 20A, 9.1Ohm, 5V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: -	Request a Quote	135 V	20 A	60 A	-	150 W	-	Logic	20 nC	-	68V, 20A, 9.1Ohm, 5V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
AOKS40B65H2AL	Alpha & Omega Semiconductor Inc.	IGBT 40A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Power - Max: 260 W Switching Energy: 1.17mJ (on), 540µJ (off) Input Type: Standard Gate Charge: 61 nC Td (on/off) @ 25°C: 30ns/117ns Test Condition: 400V, 40A, 7.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: -	Request a Quote	650 V	80 A	120 A	2.6V @ 15V, 40A	260 W	1.17mJ (on), 540µJ (off)	Standard	61 nC	30ns/117ns	400V, 40A, 7.5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
RJP4002ASA-00-Q0	Renesas Electronics Corporation	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXGM17N100A	IXYS	IGBT 1000V 34A 150W TO204AE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector (Ic) (Max): 34 A Current - Collector Pulsed (Icm): 68 A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A Power - Max: 150 W Switching Energy: 3mJ (off) Input Type: Standard Gate Charge: 120 nC Td (on/off) @ 25°C: 100ns/500ns Test Condition: 800V, 17A, 82Ohm, 15V Reverse Recovery Time (trr): 200 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AE Supplier Device Package: TO-204AE	패키지: -	Request a Quote	1000 V	34 A	68 A	4V @ 15V, 17A	150 W	3mJ (off)	Standard	120 nC	100ns/500ns	800V, 17A, 82Ohm, 15V	200 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-204AE	TO-204AE
IKQ150N65EH7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 160A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 160 A Current - Collector Pulsed (Icm): 600 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A Power - Max: 621 W Switching Energy: 5.8mJ (on), 5.4mJ (off) Input Type: Standard Gate Charge: 301 nC Td (on/off) @ 25°C: 45ns/341ns Test Condition: 400V, 150A, 10Ohm, 15V Reverse Recovery Time (trr): 84 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	패키지: -	재고528	650 V	160 A	600 A	1.65V @ 15V, 150A	621 W	5.8mJ (on), 5.4mJ (off)	Standard	301 nC	45ns/341ns	400V, 150A, 10Ohm, 15V	84 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-46
STGWA40HP65FB2	STMicroelectronics	TRENCH GATE FIELD-STOP, 650 V, 4 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 72 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 227 W Switching Energy: 410µJ (off) Input Type: Standard Gate Charge: 153 nC Td (on/off) @ 25°C: -/125ns Test Condition: 400V, 40A, 4.7Ohm, 15V Reverse Recovery Time (trr): 140 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads	패키지: -	재고129	650 V	72 A	120 A	2V @ 15V, 40A	227 W	410µJ (off)	Standard	153 nC	-/125ns	400V, 40A, 4.7Ohm, 15V	140 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 Long Leads