트랜지스터 - IGBT - 단일

IRGP4740DPBF

Infineon Technologies

IGBT 650V TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 72A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 24A
• Power - Max: 250W
• Switching Energy: 520µJ (on), 240µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 24ns/73ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

패키지: TO-247-3

IRGI4064DPBF

Infineon Technologies

IGBT 600V 15A 38W TO220

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
• Power - Max: 38W
• Switching Energy: 20µJ (on), 125µJ (off)
• Input Type: Standard
• Gate Charge: 21nC
• Td (on/off) @ 25°C: 29ns/84ns
• Test Condition: 400V, 8A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 48ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

패키지: TO-220-3 Full Pack

IRG4PC40FD

Infineon Technologies

IGBT 600V 49A 160W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 49A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
• Power - Max: 160W
• Switching Energy: 950µJ (on), 2.01mJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 63ns/230ns
• Test Condition: 480V, 27A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IKA20N65ET6XKSA1

Infineon Technologies

IGBT 650V 20A TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IXGP30N60C3C1

IXYS

IGBT 600V 60A 220W TO220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
• Power - Max: 220W
• Switching Energy: 120µJ (on), 90µJ (off)
• Input Type: Standard
• Gate Charge: 38nC
• Td (on/off) @ 25°C: 17ns/42ns
• Test Condition: 300V, 20A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IXXH100N60B3

IXYS

IGBT 600V 220A 830W TO247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 220A
• Current - Collector Pulsed (Icm): 480A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
• Power - Max: 830W
• Switching Energy: 1.9mJ (on), 2mJ (off)
• Input Type: Standard
• Gate Charge: 143nC
• Td (on/off) @ 25°C: 30ns/120ns
• Test Condition: 360V, 70A, 2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXXH)

패키지: TO-247-3

IXA12IF1200TC

IXYS

IGBT 1200V 20A 85W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
• Power - Max: 85W
• Switching Energy: 1.1mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 10A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 350ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268AA

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

STGW38IH130D

STMicroelectronics

IGBT 1300V 63A 250W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1300V
• Current - Collector (Ic) (Max): 63A
• Current - Collector Pulsed (Icm): 125A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
• Power - Max: 250W
• Switching Energy: 3.4mJ (off)
• Input Type: Standard
• Gate Charge: 127nC
• Td (on/off) @ 25°C: -/284ns
• Test Condition: 960V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 Long Leads

패키지: TO-247-3

IXGP30N60B2

IXYS

IGBT 600V 70A 190W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
• Power - Max: 190W
• Switching Energy: 320µJ (off)
• Input Type: Standard
• Gate Charge: 66nC
• Td (on/off) @ 25°C: 13ns/110ns
• Test Condition: 400V, 24A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

SGP13N60UFDTU

Fairchild/ON Semiconductor

IGBT 600V 13A 60W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 52A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
• Power - Max: 60W
• Switching Energy: 85µJ (on), 95µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 20ns/70ns
• Test Condition: 300V, 6.5A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 55ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

패키지: TO-220-3

STGF6M65DF2

STMicroelectronics

IGBT TRENCH 650V 12A TO220FP

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 24.2W
• Switching Energy: 36µJ (on), 200µJ (off)
• Input Type: Standard
• Gate Charge: 21.2nC
• Td (on/off) @ 25°C: 15ns/90ns
• Test Condition: 400V, 6A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

패키지: TO-220-3 Full Pack

IRG4PH40UD2-EP

Infineon Technologies

IGBT 1200V 41A 160W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 41A
• Current - Collector Pulsed (Icm): 82A
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
• Power - Max: 160W
• Switching Energy: 1.95mJ (on), 1.71mJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 22ns/100ns
• Test Condition: 800V, 21A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

패키지: TO-247-3

APT15GP60BG

Microsemi Corporation

IGBT 600V 56A 250W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 56A
• Current - Collector Pulsed (Icm): 65A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
• Power - Max: 250W
• Switching Energy: 130µJ (on), 121µJ (off)
• Input Type: Standard
• Gate Charge: 55nC
• Td (on/off) @ 25°C: 8ns/29ns
• Test Condition: 400V, 15A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

패키지: TO-247-3

STGB10H60DF

STMicroelectronics

IGBT 600V 20A 115W D2PAK

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
• Power - Max: 115W
• Switching Energy: 83µJ (on), 140µJ (off)
• Input Type: Standard
• Gate Charge: 57nC
• Td (on/off) @ 25°C: 19.5ns/103ns
• Test Condition: 400V, 10A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 107ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RGTH50TS65GC11

Rohm Semiconductor

IGBT 650V 50A 174W TO-247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 174W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 49nC
• Td (on/off) @ 25°C: 27ns/94ns
• Test Condition: 400V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

패키지: TO-247-3

RGT40NS65DGTL

Rohm Semiconductor

IGBT 650V 40A 161W TO-263S

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 161W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 40nC
• Td (on/off) @ 25°C: 22ns/75ns
• Test Condition: 400V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 58ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: LPDS (TO-263S)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXYH100N65C3

IXYS

IGBT 650V 200A 830W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 200A
• Current - Collector Pulsed (Icm): 420A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
• Power - Max: 830W
• Switching Energy: 2.15mJ (on), 840µJ (off)
• Input Type: Standard
• Gate Charge: 164nC
• Td (on/off) @ 25°C: 28ns/106ns
• Test Condition: 400V, 50A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

패키지: TO-247-3

IHW40N120R3FKSA1

Infineon Technologies

IGBT 1200V 80A 429W TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
• Power - Max: 429W
• Switching Energy: 2.02mJ (off)
• Input Type: Standard
• Gate Charge: 335nC
• Td (on/off) @ 25°C: -/336ns
• Test Condition: 600V, 40A, 7.5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

FGPF4536

Fairchild Semiconductor

INSULATED GATE BIPOLAR TRANSISTO

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 360 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 220 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
• Power - Max: 28.4 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 47 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F-3

패키지: -

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FGH60T65SHD-F155

onsemi

IGBT TRENCH FS 650V 120A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 120 A
• Current - Collector Pulsed (Icm): 180 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
• Power - Max: 349 W
• Switching Energy: 1.69mJ (on), 630µJ (off)
• Input Type: Standard
• Gate Charge: 102 nC
• Td (on/off) @ 25°C: 26ns/87ns
• Test Condition: 400V, 60A, 6Ohm, 15V
• Reverse Recovery Time (trr): 34.6 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

패키지: -

IXYA20N120C4HV

IXYS

IGBT 1200V 20A X4 HSPEED TO263D2

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 68 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 375 W
• Switching Energy: 4.4mJ (on), 1mJ (off)
• Input Type: Standard
• Gate Charge: 44 nC
• Td (on/off) @ 25°C: 14ns/160ns
• Test Condition: 960mV, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr): 53 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV

패키지: -

IXGM30N60

IXYS

IGBT 600V 50A 200W TO-204AE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 100 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: 200 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 180 nC
• Td (on/off) @ 25°C: 100ns/500ns
• Test Condition: -
• Reverse Recovery Time (trr): 200 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-204AE
• Supplier Device Package: TO-204AE

패키지: -

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IRG4CC50WB

Infineon Technologies

IGBT CHIP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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STGWA30H65DFB2

STMicroelectronics

DISCRETE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 167 W
• Switching Energy: 270µJ (on), 310µJ (off)
• Input Type: Standard
• Gate Charge: 90 nC
• Td (on/off) @ 25°C: 18.4ns/71ns
• Test Condition: 400V, 30A, 6.8Ohm, 15V
• Reverse Recovery Time (trr): 115 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 Long Leads

패키지: -

SIGC08T60EX1SA2

Infineon Technologies

IGBT TRENCH FS 600V 15A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 15 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 15A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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HGTD8P50G1S

Harris Corporation

8A, 500V P-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 500 V
• Current - Collector (Ic) (Max): 12 A
• Current - Collector Pulsed (Icm): 18 A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
• Power - Max: 66 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 30 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

패키지: -

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AOTF10B60D2

Alpha & Omega Semiconductor Inc.

IGBT 600V 10A TO-220F

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 23 A
• Current - Collector Pulsed (Icm): 20 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
• Power - Max: 31.2 W
• Switching Energy: 140µJ (on), 40µJ (off)
• Input Type: Standard
• Gate Charge: 9.4 nC
• Td (on/off) @ 25°C: 12ns/83ns
• Test Condition: 400V, 5A, 60Ohm, 15V
• Reverse Recovery Time (trr): 98 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F

패키지: -

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TIG064E8-TL-H-ON

onsemi

N-CHANNEL IGBT FOR LIGHT-CONTROL

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: 8-ECH

패키지: -

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