페이지 109 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

IRG7PH42UD2PBF

Infineon Technologies

IGBT 1200V 60A 321W TO247AC

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 30A
Power - Max: 321W
Switching Energy: 1.32mJ (off)
Input Type: Standard
Gate Charge: 234nC
Td (on/off) @ 25°C: -/233ns
Test Condition: 600V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고4,912

1200V

60A

90A

2.02V @ 15V, 30A

321W

1.32mJ (off)

Standard

234nC

-/233ns

600V, 30A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

IRG4PC20UPBF

Infineon Technologies

IGBT 600V 13A 60W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 13A
Current - Collector Pulsed (Icm): 52A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Power - Max: 60W
Switching Energy: 100µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 21ns/86ns
Test Condition: 480V, 6.5A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고8,988

600V

13A

52A

2.1V @ 15V, 6.5A

60W

100µJ (on), 120µJ (off)

Standard

27nC

21ns/86ns

480V, 6.5A, 50 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

IRG4BC10SD-L

Infineon Technologies

IGBT 600V 14A 38W TO262

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Power - Max: 38W
Switching Energy: 310µJ (on), 3.28mJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 76ns/815ns
Test Condition: 480V, 8A, 100 Ohm, 15V
Reverse Recovery Time (trr): 28ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고2,352

600V

14A

18A

1.8V @ 15V, 8A

38W

310µJ (on), 3.28mJ (off)

Standard

15nC

76ns/815ns

480V, 8A, 100 Ohm, 15V

28ns

-55°C ~ 150°C (TJ)

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262

IXST35N120B

IXYS

IGBT 1200V 70A 300W TO268

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 140A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Power - Max: 300W
Switching Energy: 5mJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 36ns/160ns
Test Condition: 960V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고3,280

1200V

70A

140A

3.6V @ 15V, 35A

300W

5mJ (off)

Standard

120nC

36ns/160ns

960V, 35A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

STGP10NB37LZ

STMicroelectronics

IGBT 440V 20A 125W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 440V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Power - Max: 125W
Switching Energy: 2.4mJ (on), 5mJ (off)
Input Type: Standard
Gate Charge: 28nC
Td (on/off) @ 25°C: 1.3µs/8µs
Test Condition: 328V, 10A, 1 kOhm, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고21,024

440V

20A

40A

1.8V @ 4.5V, 10A

125W

2.4mJ (on), 5mJ (off)

Standard

28nC

1.3µs/8µs

328V, 10A, 1 kOhm, 5V

-

-65°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220AB

AUIRG4BC30U-S

Infineon Technologies

IGBT 600V 23A 100W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Power - Max: 100W
Switching Energy: 360µJ
Input Type: Standard
Gate Charge: 50nC
Td (on/off) @ 25°C: 17ns/78ns
Test Condition: 480V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,952

600V

23A

92A

2.1V @ 15V, 12A

100W

360µJ

Standard

50nC

17ns/78ns

480V, 12A, 23 Ohm, 15V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

IXBL20N300C

IXYS

IGBT 3000V

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 430A
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 20A
Power - Max: 417W
Switching Energy: 23mJ (on), 2.6mJ (off)
Input Type: Standard
Gate Charge: 425nC
Td (on/off) @ 25°C: 33ns/370ns
Test Condition: 1500V, 20A, 3 Ohm, 15V
Reverse Recovery Time (trr): 864ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak?
Supplier Device Package: ISOPLUSi5-Pak?

패키지: ISOPLUSi5-Pak?

재고7,792

3000V

50A

430A

6V @ 15V, 20A

417W

23mJ (on), 2.6mJ (off)

Standard

425nC

33ns/370ns

1500V, 20A, 3 Ohm, 15V

864ns

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUSi5-Pak?

IXGH72N60C3

IXYS

IGBT 600V 75A 540W TO247AD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: 540W
Switching Energy: 1.03mJ (on), 480µJ (off)
Input Type: Standard
Gate Charge: 174nC
Td (on/off) @ 25°C: 27ns/77ns
Test Condition: 480V, 50A, 2 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고5,248

600V

75A

360A

2.5V @ 15V, 50A

540W

1.03mJ (on), 480µJ (off)

Standard

174nC

27ns/77ns

480V, 50A, 2 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

FGA30N60LSDTU

Fairchild/ON Semiconductor

IGBT 600V 60A 480W TO3PN

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 90A
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Power - Max: 480W
Switching Energy: 1.1mJ (on), 21mJ (off)
Input Type: Standard
Gate Charge: 225nC
Td (on/off) @ 25°C: 18ns/250ns
Test Condition: 400V, 30A, 6.8 Ohm, 15V
Reverse Recovery Time (trr): 35ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고3,440

600V

60A

90A

1.4V @ 15V, 30A

480W

1.1mJ (on), 21mJ (off)

Standard

225nC

18ns/250ns

400V, 30A, 6.8 Ohm, 15V

35ns

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

FGA50N100BNTDTU

Fairchild/ON Semiconductor

IGBT 1000V 50A 156W TO3P

IGBT Type: NPT and Trench
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Power - Max: 156W
Switching Energy: -
Input Type: Standard
Gate Charge: 275nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.5µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고14,592

1000V

50A

100A

2.9V @ 15V, 60A

156W

-

Standard

275nC

-

1.5µs

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

IXGA12N100

IXYS

IGBT 1000V 24A 100W TO263AA

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 48A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A
Power - Max: 100W
Switching Energy: 2.5mJ (off)
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 100ns/850ns
Test Condition: 800V, 12A, 120 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXGA)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,608

1000V

24A

48A

3.5V @ 15V, 12A

100W

2.5mJ (off)

Standard

65nC

100ns/850ns

800V, 12A, 120 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (IXGA)

STGP6NC60HD

STMicroelectronics

IGBT 600V 15A 56W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 21A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
Power - Max: 56W
Switching Energy: 20µJ (on), 68µJ (off)
Input Type: Standard
Gate Charge: 13.6nC
Td (on/off) @ 25°C: 12ns/76ns
Test Condition: 390V, 3A, 10 Ohm, 15V
Reverse Recovery Time (trr): 21ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고83,016

600V

15A

21A

2.5V @ 15V, 3A

56W

20µJ (on), 68µJ (off)

Standard

13.6nC

12ns/76ns

390V, 3A, 10 Ohm, 15V

21ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

AOT15B60D

Alpha & Omega Semiconductor Inc.

IGBT 600V 30A 167W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
Power - Max: 167W
Switching Energy: 420µJ (on), 110µJ (off)
Input Type: Standard
Gate Charge: 25.4nC
Td (on/off) @ 25°C: 21ns/73ns
Test Condition: 400V, 15A, 20 Ohm, 15V
Reverse Recovery Time (trr): 196ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고51,528

600V

30A

60A

1.8V @ 15V, 15A

167W

420µJ (on), 110µJ (off)

Standard

25.4nC

21ns/73ns

400V, 15A, 20 Ohm, 15V

196ns

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220

IRG4BC30UPBF

Infineon Technologies

IGBT 600V 23A 100W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Power - Max: 100W
Switching Energy: 160µJ (on), 200µJ (off)
Input Type: Standard
Gate Charge: 50nC
Td (on/off) @ 25°C: 17ns/78ns
Test Condition: 480V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고10,968

600V

23A

92A

2.1V @ 15V, 12A

100W

160µJ (on), 200µJ (off)

Standard

50nC

17ns/78ns

480V, 12A, 23 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

APT40GP90BG

Microsemi Corporation

IGBT 900V 100A 543W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Power - Max: 543W
Switching Energy: 825µJ (off)
Input Type: Standard
Gate Charge: 145nC
Td (on/off) @ 25°C: 16ns/75ns
Test Condition: 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

패키지: TO-247-3

재고4,256

900V

100A

160A

3.9V @ 15V, 40A

543W

825µJ (off)

Standard

145nC

16ns/75ns

600V, 40A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247 [B]

STGWT20IH125DF

STMicroelectronics

IGBT 1250V 40A 259W TO-3P

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1250V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: 259W
Switching Energy: 410µJ (off)
Input Type: Standard
Gate Charge: 68nC
Td (on/off) @ 25°C: -/106ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고7,376

1250V

40A

80A

2.5V @ 15V, 15A

259W

410µJ (off)

Standard

68nC

-/106ns

600V, 15A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

LGD15N41ATI

Littelfuse Inc.

IGBT 440V 15A 107W DPAK3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FGH60T65SQD-F155

onsemi

IGBT TRENCH FS 650V 120A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Power - Max: 333 W
Switching Energy: 227µJ (on), 100µJ (off)
Input Type: Standard
Gate Charge: 79 nC
Td (on/off) @ 25°C: 20.8ns/102ns
Test Condition: 400V, 15A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 34.6 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: -

재고1,176

650 V

120 A

240 A

2.1V @ 15V, 60A

333 W

227µJ (on), 100µJ (off)

Standard

79 nC

20.8ns/102ns

400V, 15A, 4.7Ohm, 15V

34.6 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

AIMBG75R140M1HXTMA1

Infineon Technologies

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,000

-

TIG032TS-TL-H

onsemi

NCH IGBT 180A 400V 2.5V

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IGTP10N40A

Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

Request a Quote

400 V

10 A

-

Standard

-

Through Hole

TO-220-3

TO-220

IXYP30N65C3

IXYS

DISC IGBT XPT-GENX3 TO-220AB/FP

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 118 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Power - Max: 270 W
Switching Energy: 1mJ (on), 270µJ (off)
Input Type: Standard
Gate Charge: 44 nC
Td (on/off) @ 25°C: 21ns/75ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 42 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

Request a Quote

650 V

60 A

118 A

2.7V @ 15V, 30A

270 W

1mJ (on), 270µJ (off)

Standard

44 nC

21ns/75ns

400V, 30A, 10Ohm, 15V

42 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220

SGB8206ANTF4G

onsemi

IGBT 20A, 350V, N-CHANNEL

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
Power - Max: 150 W
Switching Energy: -
Input Type: Logic
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: -

Request a Quote

390 V

20 A

-

1.9V @ 4.5V, 20A

150 W

-

Logic

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

IXYK300N65A3

IXYS

DISC IGBT XPT-GENX3 TO-264(3)

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 600 A
Current - Collector Pulsed (Icm): 1460 A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Power - Max: 2300 W
Switching Energy: 7.8mJ (on), 4.7mJ (off)
Input Type: Standard
Gate Charge: 565 nC
Td (on/off) @ 25°C: 42ns/190ns
Test Condition: 400V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr): 125 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: PLUS264™

패키지: -

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650 V

600 A

1460 A

1.6V @ 15V, 100A

2300 W

7.8mJ (on), 4.7mJ (off)

Standard

565 nC

42ns/190ns

400V, 100A, 1Ohm, 15V

125 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-264-3, TO-264AA

PLUS264™

FGH40T65SPD-F155

onsemi

IGBT 650V 80A 267W TO-247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 267 W
Switching Energy: 1.16mJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 35 nC
Td (on/off) @ 25°C: 16ns/37ns
Test Condition: 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr): 34 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: -

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650 V

80 A

120 A

2.4V @ 15V, 40A

267 W

1.16mJ (on), 280µJ (off)

Standard

35 nC

16ns/37ns

400V, 40A, 6Ohm, 15V

34 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

SIGC08T60EX7SA1

Infineon Technologies

IGBT TRENCH FS 600V 15A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

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600 V

15 A

45 A

1.9V @ 15V, 15A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

HGTD10N40F1S

Harris Corporation

10A, 400V N-CHANNEL IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 12 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 5A
Power - Max: 75 W
Switching Energy: -
Input Type: Standard
Gate Charge: 13.4 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)

패키지: -

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400 V

12 A

-

2.5V @ 10V, 5A

75 W

-

Standard

13.4 nC

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

AFGHL75T65SQDC

onsemi

IGBT TRENCH FS 650V 80A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 375 W
Switching Energy: 1.68mJ (on), 1.11mJ (off)
Input Type: Standard
Gate Charge: 139 nC
Td (on/off) @ 25°C: 24ns/107.2ns
Test Condition: 400V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: -

재고1,305

650 V

80 A

300 A

2.1V @ 15V, 75A

375 W

1.68mJ (on), 1.11mJ (off)

Standard

139 nC

24ns/107.2ns

400V, 75A, 4.7Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG7PH42UD2PBF	Infineon Technologies	IGBT 1200V 60A 321W TO247AC IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 30A Power - Max: 321W Switching Energy: 1.32mJ (off) Input Type: Standard Gate Charge: 234nC Td (on/off) @ 25°C: -/233ns Test Condition: 600V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고4,912	1200V	60A	90A	2.02V @ 15V, 30A	321W	1.32mJ (off)	Standard	234nC	-/233ns	600V, 30A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRG4PC20UPBF	Infineon Technologies	IGBT 600V 13A 60W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 100µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 21ns/86ns Test Condition: 480V, 6.5A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고8,988	600V	13A	52A	2.1V @ 15V, 6.5A	60W	100µJ (on), 120µJ (off)	Standard	27nC	21ns/86ns	480V, 6.5A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRG4BC10SD-L	Infineon Technologies	IGBT 600V 14A 38W TO262 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A Power - Max: 38W Switching Energy: 310µJ (on), 3.28mJ (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25°C: 76ns/815ns Test Condition: 480V, 8A, 100 Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고2,352	600V	14A	18A	1.8V @ 15V, 8A	38W	310µJ (on), 3.28mJ (off)	Standard	15nC	76ns/815ns	480V, 8A, 100 Ohm, 15V	28ns	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262
IXST35N120B	IXYS	IGBT 1200V 70A 300W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Power - Max: 300W Switching Energy: 5mJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 36ns/160ns Test Condition: 960V, 35A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고3,280	1200V	70A	140A	3.6V @ 15V, 35A	300W	5mJ (off)	Standard	120nC	36ns/160ns	960V, 35A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
STGP10NB37LZ	STMicroelectronics	IGBT 440V 20A 125W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 440V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A Power - Max: 125W Switching Energy: 2.4mJ (on), 5mJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 1.3µs/8µs Test Condition: 328V, 10A, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고21,024	440V	20A	40A	1.8V @ 4.5V, 10A	125W	2.4mJ (on), 5mJ (off)	Standard	28nC	1.3µs/8µs	328V, 10A, 1 kOhm, 5V	-	-65°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB
AUIRG4BC30U-S	Infineon Technologies	IGBT 600V 23A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 360µJ Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 17ns/78ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,952	600V	23A	92A	2.1V @ 15V, 12A	100W	360µJ	Standard	50nC	17ns/78ns	480V, 12A, 23 Ohm, 15V	-	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IXBL20N300C	IXYS	IGBT 3000V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 430A Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 20A Power - Max: 417W Switching Energy: 23mJ (on), 2.6mJ (off) Input Type: Standard Gate Charge: 425nC Td (on/off) @ 25°C: 33ns/370ns Test Condition: 1500V, 20A, 3 Ohm, 15V Reverse Recovery Time (trr): 864ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak? Supplier Device Package: ISOPLUSi5-Pak?	패키지: ISOPLUSi5-Pak?	재고7,792	3000V	50A	430A	6V @ 15V, 20A	417W	23mJ (on), 2.6mJ (off)	Standard	425nC	33ns/370ns	1500V, 20A, 3 Ohm, 15V	864ns	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUSi5-Pak?	ISOPLUSi5-Pak?
IXGH72N60C3	IXYS	IGBT 600V 75A 540W TO247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: 540W Switching Energy: 1.03mJ (on), 480µJ (off) Input Type: Standard Gate Charge: 174nC Td (on/off) @ 25°C: 27ns/77ns Test Condition: 480V, 50A, 2 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고5,248	600V	75A	360A	2.5V @ 15V, 50A	540W	1.03mJ (on), 480µJ (off)	Standard	174nC	27ns/77ns	480V, 50A, 2 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
FGA30N60LSDTU	Fairchild/ON Semiconductor	IGBT 600V 60A 480W TO3PN IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Power - Max: 480W Switching Energy: 1.1mJ (on), 21mJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: 18ns/250ns Test Condition: 400V, 30A, 6.8 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고3,440	600V	60A	90A	1.4V @ 15V, 30A	480W	1.1mJ (on), 21mJ (off)	Standard	225nC	18ns/250ns	400V, 30A, 6.8 Ohm, 15V	35ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
FGA50N100BNTDTU	Fairchild/ON Semiconductor	IGBT 1000V 50A 156W TO3P IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Power - Max: 156W Switching Energy: - Input Type: Standard Gate Charge: 275nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.5µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고14,592	1000V	50A	100A	2.9V @ 15V, 60A	156W	-	Standard	275nC	-	-	1.5µs	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
IXGA12N100	IXYS	IGBT 1000V 24A 100W TO263AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A Power - Max: 100W Switching Energy: 2.5mJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 100ns/850ns Test Condition: 800V, 12A, 120 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,608	1000V	24A	48A	3.5V @ 15V, 12A	100W	2.5mJ (off)	Standard	65nC	100ns/850ns	800V, 12A, 120 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
STGP6NC60HD	STMicroelectronics	IGBT 600V 15A 56W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 21A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A Power - Max: 56W Switching Energy: 20µJ (on), 68µJ (off) Input Type: Standard Gate Charge: 13.6nC Td (on/off) @ 25°C: 12ns/76ns Test Condition: 390V, 3A, 10 Ohm, 15V Reverse Recovery Time (trr): 21ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고83,016	600V	15A	21A	2.5V @ 15V, 3A	56W	20µJ (on), 68µJ (off)	Standard	13.6nC	12ns/76ns	390V, 3A, 10 Ohm, 15V	21ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
AOT15B60D	Alpha & Omega Semiconductor Inc.	IGBT 600V 30A 167W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A Power - Max: 167W Switching Energy: 420µJ (on), 110µJ (off) Input Type: Standard Gate Charge: 25.4nC Td (on/off) @ 25°C: 21ns/73ns Test Condition: 400V, 15A, 20 Ohm, 15V Reverse Recovery Time (trr): 196ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고51,528	600V	30A	60A	1.8V @ 15V, 15A	167W	420µJ (on), 110µJ (off)	Standard	25.4nC	21ns/73ns	400V, 15A, 20 Ohm, 15V	196ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
IRG4BC30UPBF	Infineon Technologies	IGBT 600V 23A 100W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 100W Switching Energy: 160µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 17ns/78ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고10,968	600V	23A	92A	2.1V @ 15V, 12A	100W	160µJ (on), 200µJ (off)	Standard	50nC	17ns/78ns	480V, 12A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
APT40GP90BG	Microsemi Corporation	IGBT 900V 100A 543W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A Power - Max: 543W Switching Energy: 825µJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 16ns/75ns Test Condition: 600V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	패키지: TO-247-3	재고4,256	900V	100A	160A	3.9V @ 15V, 40A	543W	825µJ (off)	Standard	145nC	16ns/75ns	600V, 40A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
STGWT20IH125DF	STMicroelectronics	IGBT 1250V 40A 259W TO-3P IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1250V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 259W Switching Energy: 410µJ (off) Input Type: Standard Gate Charge: 68nC Td (on/off) @ 25°C: -/106ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고7,376	1250V	40A	80A	2.5V @ 15V, 15A	259W	410µJ (off)	Standard	68nC	-/106ns	600V, 15A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
LGD15N41ATI	Littelfuse Inc.	IGBT 440V 15A 107W DPAK3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FGH60T65SQD-F155	onsemi	IGBT TRENCH FS 650V 120A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 120 A Current - Collector Pulsed (Icm): 240 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Power - Max: 333 W Switching Energy: 227µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 79 nC Td (on/off) @ 25°C: 20.8ns/102ns Test Condition: 400V, 15A, 4.7Ohm, 15V Reverse Recovery Time (trr): 34.6 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: -	재고1,176	650 V	120 A	240 A	2.1V @ 15V, 60A	333 W	227µJ (on), 100µJ (off)	Standard	79 nC	20.8ns/102ns	400V, 15A, 4.7Ohm, 15V	34.6 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
AIMBG75R140M1HXTMA1	Infineon Technologies	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TIG032TS-TL-H	onsemi	NCH IGBT 180A 400V 2.5V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGTP10N40A	Harris Corporation	N CHANNEL IGBT FOR SWITCHING APP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote	400 V	10 A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-220-3	TO-220
IXYP30N65C3	IXYS	DISC IGBT XPT-GENX3 TO-220AB/FP IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 118 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 270 W Switching Energy: 1mJ (on), 270µJ (off) Input Type: Standard Gate Charge: 44 nC Td (on/off) @ 25°C: 21ns/75ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 42 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote	650 V	60 A	118 A	2.7V @ 15V, 30A	270 W	1mJ (on), 270µJ (off)	Standard	44 nC	21ns/75ns	400V, 30A, 10Ohm, 15V	42 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
SGB8206ANTF4G	onsemi	IGBT 20A, 350V, N-CHANNEL IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 390 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: -	Request a Quote	390 V	20 A	-	1.9V @ 4.5V, 20A	150 W	-	Logic	-	-	-	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK
IXYK300N65A3	IXYS	DISC IGBT XPT-GENX3 TO-264(3) IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 600 A Current - Collector Pulsed (Icm): 1460 A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A Power - Max: 2300 W Switching Energy: 7.8mJ (on), 4.7mJ (off) Input Type: Standard Gate Charge: 565 nC Td (on/off) @ 25°C: 42ns/190ns Test Condition: 400V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): 125 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: PLUS264™	패키지: -	Request a Quote	650 V	600 A	1460 A	1.6V @ 15V, 100A	2300 W	7.8mJ (on), 4.7mJ (off)	Standard	565 nC	42ns/190ns	400V, 100A, 1Ohm, 15V	125 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	PLUS264™
FGH40T65SPD-F155	onsemi	IGBT 650V 80A 267W TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 267 W Switching Energy: 1.16mJ (on), 280µJ (off) Input Type: Standard Gate Charge: 35 nC Td (on/off) @ 25°C: 16ns/37ns Test Condition: 400V, 40A, 6Ohm, 15V Reverse Recovery Time (trr): 34 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: -	Request a Quote	650 V	80 A	120 A	2.4V @ 15V, 40A	267 W	1.16mJ (on), 280µJ (off)	Standard	35 nC	16ns/37ns	400V, 40A, 6Ohm, 15V	34 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
SIGC08T60EX7SA1	Infineon Technologies	IGBT TRENCH FS 600V 15A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	15 A	45 A	1.9V @ 15V, 15A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
HGTD10N40F1S	Harris Corporation	10A, 400V N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 12 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 5A Power - Max: 75 W Switching Energy: - Input Type: Standard Gate Charge: 13.4 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	패키지: -	Request a Quote	400 V	12 A	-	2.5V @ 10V, 5A	75 W	-	Standard	13.4 nC	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
AFGHL75T65SQDC	onsemi	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 375 W Switching Energy: 1.68mJ (on), 1.11mJ (off) Input Type: Standard Gate Charge: 139 nC Td (on/off) @ 25°C: 24ns/107.2ns Test Condition: 400V, 75A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: -	재고1,305	650 V	80 A	300 A	2.1V @ 15V, 75A	375 W	1.68mJ (on), 1.11mJ (off)	Standard	139 nC	24ns/107.2ns	400V, 75A, 4.7Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3