페이지 114 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  114/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7CH81K10EF
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,640
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot IHP10T120
Infineon Technologies

IGBT 1200V 16A 138W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
  • Power - Max: 138W
  • Switching Energy: 1.46mJ
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 45ns/520ns
  • Test Condition: 610V, 10A, 81 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고103,464
1200V
16A
24A
2.2V @ 15V, 10A
138W
1.46mJ
Standard
53nC
45ns/520ns
610V, 10A, 81 Ohm, 15V
115ns
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
STGD7NB120S-1
STMicroelectronics

IGBT 1200V 10A 55W IPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
  • Power - Max: 55W
  • Switching Energy: 15mJ (off)
  • Input Type: Standard
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 570ns/-
  • Test Condition: 960V, 7A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: I-Pak
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고3,312
1200V
10A
20A
2.1V @ 15V, 7A
55W
15mJ (off)
Standard
29nC
570ns/-
960V, 7A, 1 kOhm, 15V
-
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
I-Pak
hot IXGH40N60C2D1
IXYS

IGBT 600V 75A 300W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 18ns/90ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고142,800
600V
75A
200A
2.7V @ 15V, 30A
300W
200µJ (off)
Standard
95nC
18ns/90ns
400V, 30A, 3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
FGH30N6S2D
Fairchild/ON Semiconductor

IGBT 600V 45A 167W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 108A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 167W
  • Switching Energy: 55µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 6ns/40ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 46ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고2,112
600V
45A
108A
2.5V @ 15V, 12A
167W
55µJ (on), 100µJ (off)
Standard
23nC
6ns/40ns
390V, 12A, 10 Ohm, 15V
46ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IRGP50B60PD1-EP
Infineon Technologies

IGBT 600V 75A 390W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
  • Power - Max: 390W
  • Switching Energy: 255µJ (on), 375µJ (off)
  • Input Type: Standard
  • Gate Charge: 205nC
  • Td (on/off) @ 25°C: 30ns/130ns
  • Test Condition: 390V, 33A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD
패키지: TO-3P-3 Full Pack
재고2,416
600V
75A
150A
2.85V @ 15V, 50A
390W
255µJ (on), 375µJ (off)
Standard
205nC
30ns/130ns
390V, 33A, 3.3 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-247AD
AUIRG4BC30USTRL
Infineon Technologies

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 17ns/78ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,856
600V
23A
92A
2.1V @ 15V, 12A
100W
160µJ (on), 200µJ (off)
Standard
50nC
17ns/78ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
APT50GT120B2RDQ2G
Microsemi Corporation

IGBT 1200V 94A 625W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 94A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 625W
  • Switching Energy: 2330µJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 24ns/230ns
  • Test Condition: 800V, 50A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: -
패키지: TO-247-3
재고7,056
1200V
94A
150A
3.7V @ 15V, 50A
625W
2330µJ (off)
Standard
340nC
24ns/230ns
800V, 50A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
-
IXYX100N65B3D1
IXYS

IGBT 650V 188A 1150W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 225A
  • Current - Collector Pulsed (Icm): 460A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
  • Power - Max: 830W
  • Switching Energy: 1.27mJ (on), 1.37mJ (off)
  • Input Type: Standard
  • Gate Charge: 168nC
  • Td (on/off) @ 25°C: 29ns/150ns
  • Test Condition: 400V, 50A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 156ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고2,192
650V
225A
460A
1.85V @ 15V, 70A
830W
1.27mJ (on), 1.37mJ (off)
Standard
168nC
29ns/150ns
400V, 50A, 3 Ohm, 15V
156ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
FID35-06C
IXYS

IGBT 600V 38A 125W I4PAC5

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 38A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 125W
  • Switching Energy: 1.1mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 300V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
패키지: i4-Pac?-5
재고3,760
600V
38A
-
2.4V @ 15V, 25A
125W
1.1mJ (on), 600µJ (off)
Standard
140nC
-
300V, 25A, 10 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
IXGK50N60C2D1
IXYS

IGBT 600V 75A 480W TO264AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 480W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 138nC
  • Td (on/off) @ 25°C: 18ns/115ns
  • Test Condition: 480V, 40A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
패키지: TO-264-3, TO-264AA
재고7,408
600V
75A
300A
2.5V @ 15V, 40A
480W
380µJ (off)
Standard
138nC
18ns/115ns
480V, 40A, 2 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
STGWT60V60DLF
STMicroelectronics

IGBT BIPO 600V 60A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,536
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot STGW30NC60VD
STMicroelectronics

IGBT 600V 80A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: 220µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 31ns/100ns
  • Test Condition: 390V, 20A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 44ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고61,848
600V
80A
150A
2.5V @ 15V, 20A
250W
220µJ (on), 330µJ (off)
Standard
100nC
31ns/100ns
390V, 20A, 3.3 Ohm, 15V
44ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IXGQ90N27PB
IXYS

IGBT 270V 90A 150W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 270V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고125,064
270V
90A
-
2.1V @ 15V, 50A
150W
-
Standard
79nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXGH50N120C3
IXYS

IGBT 1200V 75A 460W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
  • Power - Max: 460W
  • Switching Energy: 2.2mJ (on), 630µJ (off)
  • Input Type: Standard
  • Gate Charge: 196nC
  • Td (on/off) @ 25°C: 20ns/123ns
  • Test Condition: 600V, 40A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고6,368
1200V
75A
250A
4.2V @ 15V, 40A
460W
2.2mJ (on), 630µJ (off)
Standard
196nC
20ns/123ns
600V, 40A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
STGWA40N120KD
STMicroelectronics

IGBT 1200V 80A 240W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 30A
  • Power - Max: 240W
  • Switching Energy: 3.7mJ (on), 5.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 126nC
  • Td (on/off) @ 25°C: 48ns/338ns
  • Test Condition: 960V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 84ns
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고18,300
1200V
80A
120A
3.85V @ 15V, 30A
240W
3.7mJ (on), 5.7mJ (off)
Standard
126nC
48ns/338ns
960V, 30A, 10 Ohm, 15V
84ns
-55°C ~ 125°C (TJ)
Through Hole
TO-247-3
TO-247
STGF4M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, M S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 16A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 23W
  • Switching Energy: 40µJ (on), 136µJ (off)
  • Input Type: Standard
  • Gate Charge: 15.2nC
  • Td (on/off) @ 25°C: 12ns/86ns
  • Test Condition: 400V, 4A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 133ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220FP
패키지: TO-220-3
재고20,046
650V
8A
16A
2.1V @ 15V, 4A
23W
40µJ (on), 136µJ (off)
Standard
15.2nC
12ns/86ns
400V, 4A, 47 Ohm, 15V
133ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220FP
IRG4BC30KDSTRLP
Infineon Technologies

IGBT 600V 28A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고14,796
600V
28A
56A
2.7V @ 15V, 16A
100W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
NTE3311
NTE Electronics, Inc

IGBT-600V 15AMP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 400ns/500ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: -
Request a Quote
600 V
25 A
50 A
4V @ 15V, 25A
150 W
-
Standard
-
400ns/500ns
-
-
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
MMIX1X340N65B4
IXYS

IGBT 650V 450A 24-SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 450 A
  • Current - Collector Pulsed (Icm): 1200 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
  • Power - Max: 1200 W
  • Switching Energy: 4.4mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 553 nC
  • Td (on/off) @ 25°C: 62ns/245ns
  • Test Condition: 400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 76 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: 24-SMPD
패키지: -
Request a Quote
650 V
450 A
1200 A
1.7V @ 15V, 160A
1200 W
4.4mJ (on), 3.5mJ (off)
Standard
553 nC
62ns/245ns
400V, 100A, 1Ohm, 15V
76 ns
-55°C ~ 175°C (TJ)
Surface Mount
24-PowerSMD, 21 Leads
24-SMPD
AIKQ120N75CP2XKSA1
Infineon Technologies

IGBT 750V 150A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 360 A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 120A
  • Power - Max: 682 W
  • Switching Energy: 6.82mJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 731 nC
  • Td (on/off) @ 25°C: 71ns/244ns
  • Test Condition: 470V, 120A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: -
재고522
750 V
150 A
360 A
1.5V @ 15V, 120A
682 W
6.82mJ (on), 3.8mJ (off)
Standard
731 nC
71ns/244ns
470V, 120A, 5Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IXGK120N60B3
IXYS

DISC IGBT PT-MID FREQUENCY TO-26

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 280 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
  • Power - Max: 780 W
  • Switching Energy: 2.9mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 465 nC
  • Td (on/off) @ 25°C: 40ns/227ns
  • Test Condition: 480V, 100A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 87 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
패키지: -
Request a Quote
600 V
280 A
600 A
1.8V @ 15V, 100A
780 W
2.9mJ (on), 3.5mJ (off)
Standard
465 nC
40ns/227ns
480V, 100A, 2Ohm, 15V
87 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
RJP4007ANS-WS
Renesas Electronics Corporation

IGBT 400V 150A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
KGF65A4H
Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/40

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.37V @ 15V, 40A
  • Power - Max: 288 W
  • Switching Energy: 700µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75 nC
  • Td (on/off) @ 25°C: 40ns/100ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
Request a Quote
650 V
65 A
120 A
2.37V @ 15V, 40A
288 W
700µJ (on), 600µJ (off)
Standard
75 nC
40ns/100ns
400V, 40A, 10Ohm, 15V
50 ns
175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGS30TSX2HRC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 30A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 267 W
  • Switching Energy: 740µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 41 nC
  • Td (on/off) @ 25°C: 30ns/70ns
  • Test Condition: 600V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,476
1200 V
30 A
45 A
2.1V @ 15V, 15A
267 W
740µJ (on), 600µJ (off)
Standard
41 nC
30ns/70ns
600V, 15A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
BIDW50N65T
Bourns Inc.

IGBT TRENCH FS 650V 100A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 416 W
  • Switching Energy: 3mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 123 nC
  • Td (on/off) @ 25°C: 37ns/125ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 37.5 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고8,649
650 V
100 A
150 A
2.2V @ 15V, 50A
416 W
3mJ (on), 1.1mJ (off)
Standard
123 nC
37ns/125ns
400V, 50A, 10Ohm, 15V
37.5 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
SIGC18T60NCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGS50TSX2DHRC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 50A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 395 W
  • Switching Energy: 1.4mJ (on), 1.65mJ (off)
  • Input Type: Standard
  • Gate Charge: 67 nC
  • Td (on/off) @ 25°C: 37ns/140ns
  • Test Condition: 600V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 182 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,044
1200 V
50 A
75 A
2.1V @ 15V, 25A
395 W
1.4mJ (on), 1.65mJ (off)
Standard
67 nC
37ns/140ns
600V, 25A, 10Ohm, 15V
182 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N