트랜지스터 - IGBT - 단일

IRGS4064DTRRPBF

Infineon Technologies

IGBT 600V 20A 101W D2PAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
• Power - Max: 101W
• Switching Energy: 29µJ (on), 200µJ (off)
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 27ns/79ns
• Test Condition: 400V, 10A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 62ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRGI4090PBF

Infineon Technologies

IGBT 300V 21A 34W TO220ABFP

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): 21A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.94V @ 15V, 30A
• Power - Max: 34W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 34nC
• Td (on/off) @ 25°C: 20ns/99ns
• Test Condition: 240V, 11A, 10 Ohm
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

패키지: TO-220-3 Full Pack

IRGS14C40L

Infineon Technologies

IGBT 430V 20A 125W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
• Power - Max: 125W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 900ns/6µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NGB8207ANT4G

ON Semiconductor

IGBT 365V 20A 165W D2PAK3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 365V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 3.7V, 10A
• Power - Max: 165W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXGH32N60AU1

IXYS

IGBT 600V 60A 200W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
• Power - Max: 200W
• Switching Energy: 1.8mJ (off)
• Input Type: Standard
• Gate Charge: 125nC
• Td (on/off) @ 25°C: 25ns/120ns
• Test Condition: 480V, 32A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

AUIRGPS4070D0

Infineon Technologies

IGBT 700V SUPER TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IGU04N60TAKMA1

Infineon Technologies

IGBT 600V TO251-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 8A
• Current - Collector Pulsed (Icm): 12A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
• Power - Max: 42W
• Switching Energy: 61µJ (on), 84µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 14ns/164ns
• Test Condition: 400V, 4A, 47 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: PG-TO251-3

패키지: TO-251-3 Short Leads, IPak, TO-251AA

IXGP28N120B

IXYS

IGBT 1200V 50A 250W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
• Power - Max: 250W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 92nC
• Td (on/off) @ 25°C: 30ns/180ns
• Test Condition: 960V, 28A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

NGTB45N60S2WG

ON Semiconductor

IGBT 45A 600V TO-247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 45A
• Power - Max: 300W
• Switching Energy: 360µJ (off)
• Input Type: Standard
• Gate Charge: 135nC
• Td (on/off) @ 25°C: -/151ns
• Test Condition: 400V, 45A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 498ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

패키지: TO-247-3

MMIX1X200N60B3H1

IXYS

IGBT 600V 175A 520W SMPD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 175A
• Current - Collector Pulsed (Icm): 1000A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
• Power - Max: 520W
• Switching Energy: 2.85mJ (on), 2.9mJ (off)
• Input Type: Standard
• Gate Charge: 315nC
• Td (on/off) @ 25°C: 48ns/160ns
• Test Condition: 360V, 100A, 1 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-PowerSMD, 21 Leads
• Supplier Device Package: 24-SMPD

패키지: 24-PowerSMD, 21 Leads

STGB20NB41LZT4

STMicroelectronics

IGBT 442V 40A 200W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 442V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
• Power - Max: 200W
• Switching Energy: 5mJ (on), 12.9mJ (off)
• Input Type: Standard
• Gate Charge: 46nC
• Td (on/off) @ 25°C: 1µs/12.1µs
• Test Condition: 320V, 20A, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RGTH50TS65DGC11

Rohm Semiconductor

IGBT 650V 50A 174W TO-247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 174W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 49nC
• Td (on/off) @ 25°C: 27ns/94ns
• Test Condition: 400V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 58ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

패키지: TO-247-3

IXYH16N170C

IXYS

IGBT 1.7KV 40A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
• Power - Max: 310W
• Switching Energy: 2.1mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 56nC
• Td (on/off) @ 25°C: 11ns/140ns
• Test Condition: 850V, 16A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 19ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

패키지: TO-247-3

APT25GR120BD15

Microsemi Corporation

IGBT 1200V 75A 521W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
• Power - Max: 521W
• Switching Energy: 742µJ (on), 427µJ (off)
• Input Type: Standard
• Gate Charge: 203nC
• Td (on/off) @ 25°C: 16ns/122ns
• Test Condition: 600V, 25A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

APT40GR120B2D30

Microsemi Corporation

IGBT 1200V 88A 500W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 88A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
• Power - Max: 500W
• Switching Energy: 1.38mJ (on), 906µJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 22ns/163ns
• Test Condition: 600V, 40A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

패키지: TO-247-3

IXGT6N170A

IXYS

IGBT 1700V 6A 75W TO268

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 6A
• Current - Collector Pulsed (Icm): 14A
• Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
• Power - Max: 75W
• Switching Energy: 590µJ (on), 180µJ (off)
• Input Type: Standard
• Gate Charge: 18.5nC
• Td (on/off) @ 25°C: 46ns/220ns
• Test Condition: 850V, 6A, 33 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

STGW30H60DF

STMicroelectronics

IGBT 600V 60A 260W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
• Power - Max: 260W
• Switching Energy: 350µJ (on), 400µJ (off)
• Input Type: Standard
• Gate Charge: 105nC
• Td (on/off) @ 25°C: 50ns/160ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 110ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

NGTB03N60R2DT4G

ON Semiconductor

IGBT 9A 600V DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9A
• Current - Collector Pulsed (Icm): 12A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
• Power - Max: 49W
• Switching Energy: 50µJ (on), 27µJ (off)
• Input Type: Standard
• Gate Charge: 17nC
• Td (on/off) @ 25°C: 27ns/59ns
• Test Condition: 300V, 3A, 30 Ohm, 15V
• Reverse Recovery Time (trr): 65ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

STGP10NC60KD

STMicroelectronics

IGBT 600V 20A 65W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
• Power - Max: 65W
• Switching Energy: 55µJ (on), 85µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 17ns/72ns
• Test Condition: 390V, 5A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IRG7PSH73K10PBF

Infineon Technologies

IGBT 1200V 220A 1150W SUPER247

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 220A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
• Power - Max: 1150W
• Switching Energy: 7.7mJ (on), 4.6mJ (off)
• Input Type: Standard
• Gate Charge: 360nC
• Td (on/off) @ 25°C: 63ns/267ns
• Test Condition: 600V, 75A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-274AA
• Supplier Device Package: SUPER-247 (TO-274AA)

패키지: TO-274AA

78124

Microsemi Corporation

TRANSISTOR

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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IGT6E21

Harris Corporation

20A, 500V IGBT FOR MOTOR DRIVE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 500 V
• Current - Collector (Ic) (Max): 32 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: -

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HGT1S3N60C3DS

Harris Corporation

6A, 600V, N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 6 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

패키지: -

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IXA12IF1200TC-TUB

IXYS

IGBT PT 1200V 20A TO268AA

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
• Power - Max: 85 W
• Switching Energy: 1.1mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 27 nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 10A, 100Ohm, 15V
• Reverse Recovery Time (trr): 350 ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268AA

패키지: -

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FGB3236-F085C

onsemi

ECOSPARK1 IGN-IGBT TO263

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 360 V
• Current - Collector (Ic) (Max): 44 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.4V @ 4V, 6A
• Power - Max: 187 W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 20 nC
• Td (on/off) @ 25°C: 0.65µs/5.4µs
• Test Condition: -
• Reverse Recovery Time (trr): 1.7 µs
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

패키지: -

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IKWH100N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 140A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 140 A
• Current - Collector Pulsed (Icm): 400 A
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
• Power - Max: 427 W
• Switching Energy: 3.58mJ (on), 2.37mJ (off)
• Input Type: Standard
• Gate Charge: 199 nC
• Td (on/off) @ 25°C: 32ns/240ns
• Test Condition: 400V, 100A, 10Ohm, 15V
• Reverse Recovery Time (trr): 106 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-32

패키지: -

FGY75T120SWD

onsemi

IGBT FIELD STOP 1200V 150A TO247

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 150 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
• Power - Max: 503 W
• Switching Energy: 5mJ (on), 2.32mJ (off)
• Input Type: Standard
• Gate Charge: 214 nC
• Td (on/off) @ 25°C: 42ns/171ns
• Test Condition: 600V, 75A, 4.7Ohm, 15V
• Reverse Recovery Time (trr): 307 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: TO-247-3

패키지: -

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FGY60T120SQDN

onsemi

IGBT 1200V 60A UFS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 120 A
• Current - Collector Pulsed (Icm): 240 A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
• Power - Max: 517 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 311 nC
• Td (on/off) @ 25°C: 52ns/296ns
• Test Condition: 600V, 60A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: TO-247-3

패키지: -