페이지 118 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  118/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGP4263D-EPBF
Infineon Technologies

IGBT 650V 90A 325W TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 192A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
  • Power - Max: 325W
  • Switching Energy: 2.9mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 70ns/140ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고4,272
650V
90A
192A
2.1V @ 15V, 48A
325W
2.9mJ (on), 1.4mJ (off)
Standard
145nC
70ns/140ns
400V, 48A, 10 Ohm, 15V
170ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IRGBC20U
Infineon Technologies

IGBT UFAST 600V 13A TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,600
600V
13A
-
3V @ 15V, 6.5A
60W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot STGW50H60DF
STMicroelectronics

IGBT 600V 100A 360W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 360W
  • Switching Energy: 890µJ (on), 860µJ (off)
  • Input Type: Standard
  • Gate Charge: 217nC
  • Td (on/off) @ 25°C: 62ns/178ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고8,736
600V
100A
200A
1.8V @ 15V, 50A
360W
890µJ (on), 860µJ (off)
Standard
217nC
62ns/178ns
400V, 50A, 10 Ohm, 15V
55ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot STGP30NC60S
STMicroelectronics

IGBT 600V 55A 175W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 175W
  • Switching Energy: 300µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 96nC
  • Td (on/off) @ 25°C: 21.5ns/180ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고120,000
600V
55A
150A
1.9V @ 15V, 20A
175W
300µJ (on), 1.28mJ (off)
Standard
96nC
21.5ns/180ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot IXGH15N120BD1
IXYS

IGBT 1200V 30A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
  • Power - Max: 150W
  • Switching Energy: 1.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고103,464
1200V
30A
60A
3.2V @ 15V, 15A
150W
1.75mJ (off)
Standard
69nC
25ns/150ns
960V, 15A, 10 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot FGA15N120FTDTU
Fairchild/ON Semiconductor

IGBT 1200V 30A 220W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 220W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 575ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고9,672
1200V
30A
45A
2V @ 15V, 15A
220W
-
Standard
100nC
-
-
575ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IXGP7N60CD1
IXYS

IGBT 600V 14A 75W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
  • Power - Max: 75W
  • Switching Energy: 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 10ns/65ns
  • Test Condition: 480V, 7A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고7,168
600V
14A
30A
2.5V @ 15V, 7A
75W
120µJ (off)
Standard
25nC
10ns/65ns
480V, 7A, 18 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKQ40N120CH3XKSA1
Infineon Technologies

IGBT HS SW 1200V 40A TO-247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 3.3mJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 30ns/300ns
  • Test Condition: 400V, 40A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고6,864
1200V
80A
160A
2.35V @ 15V, 40A
500W
3.3mJ (on), 1.3mJ (off)
Standard
190nC
30ns/300ns
400V, 40A, 12 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IRGB6B60KDPBF
Infineon Technologies

IGBT 600V 13A 90W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 90W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,984
600V
13A
26A
2.2V @ 15V, 5A
90W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXBF15N300C
IXYS

IGBT 3000V 37A 300W ISOPLUSI4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 37A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 15A
  • Power - Max: 300W
  • Switching Energy: 9.15mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 267nC
  • Td (on/off) @ 25°C: 40ns/455ns
  • Test Condition: 1500V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 706ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
패키지: i4-Pac?-5 (3 leads)
재고7,872
3000V
37A
300A
6V @ 15V, 15A
300W
9.15mJ (on), 1.4mJ (off)
Standard
267nC
40ns/455ns
1500V, 15A, 10 Ohm, 15V
706ns
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
IXA55I1200HJ
IXYS

IGBT 1200V 84A 290W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 84A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 290W
  • Switching Energy: 4.5mJ (on), 5.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 50A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고7,040
1200V
84A
-
2.1V @ 15V, 50A
290W
4.5mJ (on), 5.5mJ (off)
Standard
190nC
-
600V, 50A, 15 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGT10N170A
IXYS

IGBT 1700V 10A 140W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
  • Power - Max: 140W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 46ns/190ns
  • Test Condition: 850V, 10A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고5,152
1700V
10A
20A
6V @ 15V, 5A
140W
380µJ (off)
Standard
29nC
46ns/190ns
850V, 10A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGX12N90C
IXYS

IGBT 900V 24A 100W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 20ns/135ns
  • Test Condition: 720V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고7,744
900V
24A
48A
3V @ 15V, 12A
100W
320µJ (off)
Standard
33nC
20ns/135ns
720V, 12A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
hot NGTB40N65FL2WG
ON Semiconductor

IGBT 650V 80A 366W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 366W
  • Switching Energy: 970µJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 84ns/177ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 72ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고5,536
650V
80A
160A
2V @ 15V, 40A
366W
970µJ (on), 440µJ (off)
Standard
170nC
84ns/177ns
400V, 40A, 10 Ohm, 15V
72ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
NGTB50N65FL2WAG
ON Semiconductor

IGBT FIELD STOP 650V TO247-4

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 417W
  • Switching Energy: 420µJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 215nC
  • Td (on/off) @ 25°C: 23ns/123ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 94ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
패키지: TO-247-4
재고2,736
650V
160A
160A
2V @ 15V, 50A
417W
420µJ (on), 550µJ (off)
Standard
215nC
23ns/123ns
400V, 50A, 10 Ohm, 15V
94ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
NGTD20T120F2SWK
ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고5,968
1200V
-
100A
2.4V @ 15V, 20A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKQ120N60TXKSA1
Infineon Technologies

IGBT 600V 120A CO-PAK TO-247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 480A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
  • Power - Max: 833W
  • Switching Energy: 6.2mJ (on), 5.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 703nC
  • Td (on/off) @ 25°C: 50ns/565ns
  • Test Condition: 400V, 120A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 241ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고6,800
600V
160A
480A
2V @ 15V, 120A
833W
6.2mJ (on), 5.9mJ (off)
Standard
703nC
50ns/565ns
400V, 120A, 3 Ohm, 15V
241ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
ISL9V2040S3ST
Fairchild/ON Semiconductor

IGBT 430V 10A 130W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
  • Power - Max: 130W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: -/3.64µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,224
430V
10A
-
1.9V @ 4V, 6A
130W
-
Logic
12nC
-/3.64µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot IRGP20B120U-EP
Infineon Technologies

IGBT 1200V 40A 300W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 4.85V @ 15V, 40A
  • Power - Max: 300W
  • Switching Energy: 850µJ (on), 425µJ (off)
  • Input Type: Standard
  • Gate Charge: 169nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고72,000
1200V
40A
120A
4.85V @ 15V, 40A
300W
850µJ (on), 425µJ (off)
Standard
169nC
-
600V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot APT75GP120B2G
Microsemi Corporation

IGBT 1200V 100A 1042W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
  • Power - Max: 1042W
  • Switching Energy: 1620µJ (on), 2500µJ (off)
  • Input Type: Standard
  • Gate Charge: 320nC
  • Td (on/off) @ 25°C: 20ns/163ns
  • Test Condition: 600V, 75A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
패키지: TO-247-3 Variant
재고6,320
1200V
100A
300A
3.9V @ 15V, 75A
1042W
1620µJ (on), 2500µJ (off)
Standard
320nC
20ns/163ns
600V, 75A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXXA30N65C3HV
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 52 A
  • Current - Collector Pulsed (Icm): 113 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 24A
  • Power - Max: 230 W
  • Switching Energy: 500µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 33ns/125ns
  • Test Condition: 400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 33 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
패키지: -
Request a Quote
650 V
52 A
113 A
2.2V @ 15V, 24A
230 W
500µJ (on), 450µJ (off)
Standard
37 nC
33ns/125ns
400V, 24A, 10Ohm, 15V
33 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
RGS40NL65HRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 42A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 42 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 177 W
  • Switching Energy: 560µJ (on), 490µJ (off)
  • Input Type: Standard
  • Gate Charge: 28 nC
  • Td (on/off) @ 25°C: 24ns/87ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고2,640
650 V
42 A
60 A
2.1V @ 15V, 20A
177 W
560µJ (on), 490µJ (off)
Standard
28 nC
24ns/87ns
400V, 20A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
SIGC14T60SNCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
31ns/261ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IQFH47N04NM6ATMA1
Infineon Technologies

TRENCH <= 40V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FGB3236
Fairchild Semiconductor

IGBT 360V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXYP20N120C4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 68 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 375 W
  • Switching Energy: 4.4mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: 14ns/160ns
  • Test Condition: 960V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 53 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
패키지: -
Request a Quote
1200 V
68 A
120 A
2.5V @ 15V, 20A
375 W
4.4mJ (on), 1mJ (off)
Standard
44 nC
14ns/160ns
960V, 20A, 10Ohm, 15V
53 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)
FGB3245G2-F085
onsemi

ECOSPARK2 450V IGNITION IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 450 V
  • Current - Collector (Ic) (Max): 23 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 23 nC
  • Td (on/off) @ 25°C: 900ns/5.4µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
재고1,005
450 V
23 A
-
1.25V @ 4V, 6A
150 W
-
Logic
23 nC
900ns/5.4µs
-
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IXA30RG1200DHG-TRR
IXYS

IGBT PHASELEG 1200V 43A SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 43 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 147 W
  • Switching Energy: 2.5mJ (on), 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 76 nC
  • Td (on/off) @ 25°C: 70ns/250ns
  • Test Condition: 600V, 25A, 39Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD™.B
패키지: -
Request a Quote
1200 V
43 A
-
2.1V @ 15V, 25A
147 W
2.5mJ (on), 3mJ (off)
Standard
76 nC
70ns/250ns
600V, 25A, 39Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
9-SMD Module
ISOPLUS-SMPD™.B