페이지 124 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  124/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGH4610DPBF
Infineon Technologies

IGBT 600V 8PQFN

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,040
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG7CH46UED
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,456
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGP4760DPBF
Infineon Technologies

IGBT 650V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
  • Power - Max: 325W
  • Switching Energy: 1.7mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 70ns/140ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고7,600
650V
90A
144A
2V @ 15V, 48A
325W
1.7mJ (on), 1mJ (off)
Standard
145nC
70ns/140ns
400V, 48A, 10 Ohm, 15V
170ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG7PH37K10DPBF
Infineon Technologies

IGBT 1200V 45A 216W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 216W
  • Switching Energy: 1mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 50ns/240ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 120ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고6,336
1200V
45A
60A
2.4V @ 15V, 15A
216W
1mJ (on), 600µJ (off)
Standard
135nC
50ns/240ns
600V, 15A, 10 Ohm, 15V
120ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG6S320UPBF
Infineon Technologies

IGBT 330V 50A 114W D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A
  • Power - Max: 114W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 24ns/89ns
  • Test Condition: 196V, 12A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고37,800
330V
50A
-
1.65V @ 15V, 24A
114W
-
Standard
46nC
24ns/89ns
196V, 12A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGP35N35LZ
STMicroelectronics

IGBT 345V 40A 176W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 345V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 15A
  • Power - Max: 176W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 1.1µs/26.5µs
  • Test Condition: 300V, 15A, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고4,560
345V
40A
80A
1.7V @ 4.5V, 15A
176W
-
Logic
49nC
1.1µs/26.5µs
300V, 15A, 5V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
IXSK30N60CD1
IXYS

IGBT 600V 55A 200W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 480V, 30A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264AA(IXSK)
패키지: TO-264-3, TO-264AA
재고4,880
600V
55A
110A
2.5V @ 15V, 30A
200W
700µJ (off)
Standard
100nC
30ns/90ns
480V, 30A, 4.7 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264AA(IXSK)
IXGR40N60BD1
IXYS

IGBT 600V 70A 200W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 200W
  • Switching Energy: 2.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 25ns/180ns
  • Test Condition: 480V, 40A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고2,112
600V
70A
150A
2.1V @ 15V, 40A
200W
2.7mJ (off)
Standard
116nC
25ns/180ns
480V, 40A, 4.7 Ohm, 15V
35ns
-40°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
SGL50N60RUFTU
Fairchild/ON Semiconductor

IGBT 600V 80A 250W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
  • Power - Max: 250W
  • Switching Energy: 1.68mJ (on), 1.03mJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 26ns/66ns
  • Test Condition: 300V, 50A, 5.9 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: TO-264-3, TO-264AA
재고6,032
600V
80A
150A
2.8V @ 15V, 50A
250W
1.68mJ (on), 1.03mJ (off)
Standard
145nC
26ns/66ns
300V, 50A, 5.9 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
SGH40N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 160W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 97nC
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 300V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고5,360
600V
40A
160A
2.6V @ 15V, 20A
160W
160µJ (on), 200µJ (off)
Standard
97nC
15ns/65ns
300V, 20A, 10 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IRG6B330UDPBF
Infineon Technologies

IGBT 330V 70A 160W TO220

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.76V @ 15V, 120A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 85nC
  • Td (on/off) @ 25°C: 47ns/176ns
  • Test Condition: 196V, 25A, 10 Ohm
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고4,656
330V
70A
-
2.76V @ 15V, 120A
160W
-
Standard
85nC
47ns/176ns
196V, 25A, 10 Ohm
60ns
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot APT40GP90B2DQ2G
Microsemi Corporation

IGBT 900V 101A 543W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 101A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
  • Power - Max: 543W
  • Switching Energy: 795µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 14ns/90ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
패키지: TO-247-3 Variant
재고4,592
900V
101A
160A
3.9V @ 15V, 40A
543W
795µJ (off)
Standard
145nC
14ns/90ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXGT24N170A
IXYS

IGBT 1700V 24A 250W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
  • Power - Max: 250W
  • Switching Energy: 2.97mJ (on), 790µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 21ns/336ns
  • Test Condition: 850V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고4,016
1700V
24A
75A
6V @ 15V, 16A
250W
2.97mJ (on), 790µJ (off)
Standard
140nC
21ns/336ns
850V, 24A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
APT25GP120BG
Microsemi Corporation

IGBT 1200V 69A 417W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 69A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
  • Power - Max: 417W
  • Switching Energy: 500µJ (on), 438µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 12ns/70ns
  • Test Condition: 600V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고4,128
1200V
69A
90A
3.9V @ 15V, 25A
417W
500µJ (on), 438µJ (off)
Standard
110nC
12ns/70ns
600V, 25A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT45GR65SSCD10
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 118A
  • Current - Collector Pulsed (Icm): 224A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
  • Power - Max: 543W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 15ns/100ns
  • Test Condition: 433V, 45A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D3Pak
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,432
650V
118A
224A
2.4V @ 15V, 45A
543W
-
Standard
203nC
15ns/100ns
433V, 45A, 4.3 Ohm, 15V
80ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D3Pak
IXGQ180N33TCD1
IXYS

IGBT 330V 180A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 180A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고5,952
330V
180A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-3P-3, SC-65-3
TO-3P
STGPL6NC60DI
STMicroelectronics

IGBT 600V 14A 56W TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 32µJ (on), 24µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 6.7ns/46ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
패키지: TO-220-3 Full Pack
재고2,736
600V
14A
18A
2.9V @ 15V, 3A
56W
32µJ (on), 24µJ (off)
Standard
12nC
6.7ns/46ns
390V, 3A, 10 Ohm, 15V
23ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
hot HGTG20N60A4D
Fairchild/ON Semiconductor

IGBT 600V 70A 290W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 105µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: 15ns/73ns
  • Test Condition: 390V, 20A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고514,500
600V
70A
280A
2.7V @ 15V, 20A
290W
105µJ (on), 150µJ (off)
Standard
142nC
15ns/73ns
390V, 20A, 3 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IKW40N60DTPXKSA1
Infineon Technologies

IGBT 600V 67A 246W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 67A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 246W
  • Switching Energy: 1.06mJ (on), 610µJ (off)
  • Input Type: Standard
  • Gate Charge: 177nC
  • Td (on/off) @ 25°C: 18ns/222ns
  • Test Condition: 400V, 40A, 10.1 Ohm, 15V
  • Reverse Recovery Time (trr): 87ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,656
600V
67A
120A
1.8V @ 15V, 40A
246W
1.06mJ (on), 610µJ (off)
Standard
177nC
18ns/222ns
400V, 40A, 10.1 Ohm, 15V
87ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
MIW40N65RA-BP
Micro Commercial Co

IGBT 650V 40A,TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 306 W
  • Switching Energy: 1.5mJ (on), 590µJ (off)
  • Input Type: Standard
  • Gate Charge: 160 nC
  • Td (on/off) @ 25°C: 12ns/124ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AB
패키지: -
재고5,370
650 V
80 A
160 A
2.4V @ 15V, 40A
306 W
1.5mJ (on), 590µJ (off)
Standard
160 nC
12ns/124ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AB
AUIRGP4062D
International Rectifier

AUIRGP4062D - AUTOMOTIVE IGBT DI

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 72 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
  • Power - Max: 250 W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 50 nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 89 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: -
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600 V
48 A
72 A
1.95V @ 15V, 24A
250 W
115µJ (on), 600µJ (off)
Standard
50 nC
41ns/104ns
400V, 24A, 10Ohm, 15V
89 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRGC4066EFX7SA1
Infineon Technologies

IGBT 600V 140A DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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600 V
140 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IXGH30N120B3
IXYS

DISC IGBT PT-MID FREQUENCY TO-24

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
  • Power - Max: 300 W
  • Switching Energy: 3.47mJ (on), 2.16mJ (off)
  • Input Type: Standard
  • Gate Charge: 87 nC
  • Td (on/off) @ 25°C: 16ns/127ns
  • Test Condition: 960V, 30A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 37 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: -
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1200 V
60 A
150 A
3.5V @ 15V, 30A
300 W
3.47mJ (on), 2.16mJ (off)
Standard
87 nC
16ns/127ns
960V, 30A, 5Ohm, 15V
37 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
RJP60D0DPK-01-T0
Renesas

RJH60D0 - INSULATED GATE BIPOLAR

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 45 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
  • Power - Max: 140 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 45 nC
  • Td (on/off) @ 25°C: 35ns/90ns
  • Test Condition: 300V, 22A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: -
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600 V
45 A
90 A
2.2V @ 15V, 22A
140 W
-
Standard
45 nC
35ns/90ns
300V, 22A, 5Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IRG4CC80SB
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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600 V
-
-
-
-
-
Standard
-
-
-
-
-55°C ~ 150°C
Surface Mount
Die
Die
SIGC100T60R3EX1SA4
Infineon Technologies

IGBT 3 CHIP 600V 200A WAFER

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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600 V
200 A
600 A
1.9V @ 15V, 200A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IXDR35N120D1
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FGH75T65SQDNL4
onsemi

650V/75 FAST IGBT FSIII T

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 375 W
  • Switching Energy: 1.25mJ (on), 1.26mJ (off)
  • Input Type: Standard
  • Gate Charge: 152 nC
  • Td (on/off) @ 25°C: 44ns/208ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 134 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
패키지: -
재고1,269
650 V
200 A
200 A
2.1V @ 15V, 75A
375 W
1.25mJ (on), 1.26mJ (off)
Standard
152 nC
44ns/208ns
400V, 75A, 10Ohm, 15V
134 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L