페이지 127 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

IRGR4610DTRLPBF

Infineon Technologies

IGBT 600V 16A 77W DPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Power - Max: 77W
Switching Energy: 56µJ (on), 122µJ (off)
Input Type: Standard
Gate Charge: 13nC
Td (on/off) @ 25°C: 27ns/75ns
Test Condition: 400V, 6A, 47 Ohm, 15V
Reverse Recovery Time (trr): 74ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,496

600V

16A

18A

2V @ 15V, 6A

77W

56µJ (on), 122µJ (off)

Standard

13nC

27ns/75ns

400V, 6A, 47 Ohm, 15V

74ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

IRG4BC30W-S

Infineon Technologies

IGBT 600V 23A 100W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 100W
Switching Energy: 130µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 51nC
Td (on/off) @ 25°C: 25ns/99ns
Test Condition: 480V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고58,380

600V

23A

92A

2.7V @ 15V, 12A

100W

130µJ (on), 130µJ (off)

Standard

51nC

25ns/99ns

480V, 12A, 23 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

APT95GR65JDU60

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 135A
Current - Collector Pulsed (Icm): 380A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
Power - Max: 446W
Switching Energy: -
Input Type: Standard
Gate Charge: 420nC
Td (on/off) @ 25°C: 29ns/226ns
Test Condition: 433V, 95A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,264

650V

135A

380A

2.4V @ 15V, 95A

446W

-

Standard

420nC

29ns/226ns

433V, 95A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

IXSH24N60B

IXYS

IGBT 600V 48A 150W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 96A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Power - Max: 150W
Switching Energy: 1.3mJ (off)
Input Type: Standard
Gate Charge: 41nC
Td (on/off) @ 25°C: 50ns/150ns
Test Condition: 480V, 24A, 33 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXSH)

패키지: TO-247-3

재고7,376

600V

48A

96A

2.5V @ 15V, 24A

150W

1.3mJ (off)

Standard

41nC

50ns/150ns

480V, 24A, 33 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXSH)

HGTP7N60B3D

Fairchild/ON Semiconductor

IGBT 600V 14A 60W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Power - Max: 60W
Switching Energy: 160µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 23nC
Td (on/off) @ 25°C: 26ns/130ns
Test Condition: 480V, 7A, 50 Ohm, 15V
Reverse Recovery Time (trr): 37ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고16,068

600V

14A

56A

2.1V @ 15V, 7A

60W

160µJ (on), 120µJ (off)

Standard

23nC

26ns/130ns

480V, 7A, 50 Ohm, 15V

37ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

STGP3NB60F

STMicroelectronics

IGBT 600V 6A 68W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 6A
Current - Collector Pulsed (Icm): 24A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Power - Max: 68W
Switching Energy: 125µJ (off)
Input Type: Standard
Gate Charge: 16nC
Td (on/off) @ 25°C: 12.5ns/105ns
Test Condition: 480V, 3A, 10 Ohm, 15V
Reverse Recovery Time (trr): 45ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고2,016

600V

6A

24A

2.4V @ 15V, 3A

68W

125µJ (off)

Standard

16nC

12.5ns/105ns

480V, 3A, 10 Ohm, 15V

45ns

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IXGX50N60AU1

IXYS

IGBT 600V 75A 300W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Power - Max: 300W
Switching Energy: 4.8mJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 480V, 50A, 2.7 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD

패키지: TO-3P-3 Full Pack

재고2,944

600V

75A

200A

2.7V @ 15V, 50A

300W

4.8mJ (off)

Standard

200nC

50ns/200ns

480V, 50A, 2.7 Ohm, 15V

50ns

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-247AD

IRGS6B60KPBF

Infineon Technologies

IGBT 600V 13A 90W D2PAK

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 13A
Current - Collector Pulsed (Icm): 26A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Power - Max: 90W
Switching Energy: 110µJ (on), 135µJ (off)
Input Type: Standard
Gate Charge: 18.2nC
Td (on/off) @ 25°C: 25ns/215ns
Test Condition: 400V, 5A, 100 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,488

600V

13A

26A

2.2V @ 15V, 5A

90W

110µJ (on), 135µJ (off)

Standard

18.2nC

25ns/215ns

400V, 5A, 100 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

IXBT2N250

IXYS

IGBT 2500V 5A 32W TO268

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 5A
Current - Collector Pulsed (Icm): 13A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Power - Max: 32W
Switching Energy: -
Input Type: Standard
Gate Charge: 10.6nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 920ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고6,784

2500V

5A

13A

3.5V @ 15V, 2A

32W

-

Standard

10.6nC

-

920ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

IXGT15N120CD1

IXYS

IGBT 1200V 30A 150W TO268

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Power - Max: 150W
Switching Energy: 1.05mJ (off)
Input Type: Standard
Gate Charge: 69nC
Td (on/off) @ 25°C: 25ns/150ns
Test Condition: 960V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고6,912

1200V

30A

60A

3.8V @ 15V, 15A

150W

1.05mJ (off)

Standard

69nC

25ns/150ns

960V, 15A, 10 Ohm, 15V

40ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

IXGP12N100AU1

IXYS

IGBT 1000V 24A 100W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 48A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
Power - Max: 100W
Switching Energy: 4mJ (off)
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 100ns/850ns
Test Condition: 800V, 12A, 120 Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고7,616

1000V

24A

48A

4V @ 15V, 12A

100W

4mJ (off)

Standard

65nC

100ns/850ns

800V, 12A, 120 Ohm, 15V

60ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

HGT1S12N60A4DS

Fairchild/ON Semiconductor

IGBT 600V 54A 167W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 54A
Current - Collector Pulsed (Icm): 96A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 167W
Switching Energy: 55µJ (on), 50µJ (off)
Input Type: Standard
Gate Charge: 78nC
Td (on/off) @ 25°C: 17ns/96ns
Test Condition: 390V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,840

600V

54A

96A

2.7V @ 15V, 12A

167W

55µJ (on), 50µJ (off)

Standard

78nC

17ns/96ns

390V, 12A, 10 Ohm, 15V

30ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

STGP15H60DF

STMicroelectronics

IGBT 600V 30A 115W TO220

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Power - Max: 115W
Switching Energy: 136µJ (on), 207µJ (off)
Input Type: Standard
Gate Charge: 81nC
Td (on/off) @ 25°C: 24.5ns/118ns
Test Condition: 400V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): 103ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고4,544

600V

30A

60A

2V @ 15V, 15A

115W

136µJ (on), 207µJ (off)

Standard

81nC

24.5ns/118ns

400V, 15A, 10 Ohm, 15V

103ns

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220

NGTB40N65IHRTG

ON Semiconductor

650V/40A RC IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,152

-

IKW15N120T2FKSA1

Infineon Technologies

IGBT 1200V 30A 235W TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 235W
Switching Energy: 2.05mJ
Input Type: Standard
Gate Charge: 93nC
Td (on/off) @ 25°C: 32ns/362ns
Test Condition: 600V, 15A, 41.8 Ohm, 15V
Reverse Recovery Time (trr): 300ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고5,664

1200V

30A

60A

2.2V @ 15V, 15A

235W

2.05mJ

Standard

93nC

32ns/362ns

600V, 15A, 41.8 Ohm, 15V

300ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IXBT12N300

IXYS

IGBT 3000V 30A 160W TO268

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Power - Max: 160W
Switching Energy: -
Input Type: Standard
Gate Charge: 62nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.4µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고7,632

3000V

30A

100A

3.2V @ 15V, 12A

160W

-

Standard

62nC

-

1.4µs

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

RGTV60TK65DGVC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 33A TO3PFM

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 33 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Power - Max: 76 W
Switching Energy: 570µJ (on), 500µJ (off)
Input Type: Standard
Gate Charge: 64 nC
Td (on/off) @ 25°C: 33ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 95 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Supplier Device Package: TO-3PFM

패키지: -

Request a Quote

650 V

33 A

120 A

1.9V @ 15V, 30A

76 W

570µJ (on), 500µJ (off)

Standard

64 nC

33ns/105ns

400V, 30A, 10Ohm, 15V

95 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-3PFM, SC-93-3

TO-3PFM

RJP4009ANS-01-Q5

Renesas Electronics Corporation

IGBT 400V 8VSON

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 9V @ 2.5V, 150A
Power - Max: 1.8 W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN
Supplier Device Package: 8-VSON (3x4.4)

패키지: -

Request a Quote

400 V

-

150 A

9V @ 2.5V, 150A

1.8 W

-

Standard

-

-40°C ~ 150°C (TJ)

Surface Mount

8-VDFN

8-VSON (3x4.4)

SIGC14T60SNCX1SA6

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 31ns/261ns
Test Condition: 400V, 15A, 21Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

31ns/261ns

400V, 15A, 21Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

RJH6075DPM-N0-T0

Renesas Electronics Corporation

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

STB1081L3

onsemi

TRANS IGBT CHIP N-CH 380V 15A 4P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

GT40WR21-Q

Toshiba Semiconductor and Storage

IGBT 1350V 40A TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A
Power - Max: 375 W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

패키지: -

재고126

1350 V

40 A

80 A

5.9V @ 15V, 40A

375 W

-

Standard

-

175°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P(N)

FGB20N60SFD-F085

onsemi

IGBT FIELD STOP 600V 40A TO263

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A
Power - Max: 208 W
Switching Energy: 310µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 63 nC
Td (on/off) @ 25°C: 10ns/90ns
Test Condition: 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr): 111 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)

패키지: -

재고2,328

600 V

40 A

60 A

2.85V @ 15V, 20A

208 W

310µJ (on), 130µJ (off)

Standard

63 nC

10ns/90ns

400V, 20A, 10Ohm, 15V

111 ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263 (D2PAK)

BIDNW30N60H3

Bourns Inc.

IGBT TRENCH FS 600V 60A TO247NL

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 230 W
Switching Energy: 1.85mJ (on), 450µJ (off)
Input Type: Standard
Gate Charge: 76 nC
Td (on/off) @ 25°C: 30ns/67ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 28 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247N-3L

패키지: -

재고8,238

600 V

60 A

120 A

2V @ 15V, 30A

230 W

1.85mJ (on), 450µJ (off)

Standard

76 nC

30ns/67ns

400V, 30A, 10Ohm, 15V

28 ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247N-3L

IRGC100B120UB

Infineon Technologies

IGBT CHIP

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

1200 V

100 A

-

3.5V @ 15V, 100A

-

Standard

-

Surface Mount

Die

FGF65A3H

Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/30

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.73V @ 15V, 30A
Power - Max: 72 W
Switching Energy: 500µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: 60 nC
Td (on/off) @ 25°C: 30ns/90ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): 50 ns
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PF

패키지: -

Request a Quote

650 V

50 A

90 A

2.73V @ 15V, 30A

72 W

500µJ (on), 400µJ (off)

Standard

60 nC

30ns/90ns

400V, 30A, 10Ohm, 15V

50 ns

175°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3PF

STB1081SL3G

onsemi

IGBT D2PAK 350V SPECIAL

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SGD8290NT4G

Littelfuse Inc.

IGBT N-CH 20A D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGR4610DTRLPBF	Infineon Technologies	IGBT 600V 16A 77W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47 Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,496	600V	16A	18A	2V @ 15V, 6A	77W	56µJ (on), 122µJ (off)	Standard	13nC	27ns/75ns	400V, 6A, 47 Ohm, 15V	74ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
IRG4BC30W-S	Infineon Technologies	IGBT 600V 23A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고58,380	600V	23A	92A	2.7V @ 15V, 12A	100W	130µJ (on), 130µJ (off)	Standard	51nC	25ns/99ns	480V, 12A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
APT95GR65JDU60	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 135A Current - Collector Pulsed (Icm): 380A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A Power - Max: 446W Switching Energy: - Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 29ns/226ns Test Condition: 433V, 95A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,264	650V	135A	380A	2.4V @ 15V, 95A	446W	-	Standard	420nC	29ns/226ns	433V, 95A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
IXSH24N60B	IXYS	IGBT 600V 48A 150W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Power - Max: 150W Switching Energy: 1.3mJ (off) Input Type: Standard Gate Charge: 41nC Td (on/off) @ 25°C: 50ns/150ns Test Condition: 480V, 24A, 33 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXSH)	패키지: TO-247-3	재고7,376	600V	48A	96A	2.5V @ 15V, 24A	150W	1.3mJ (off)	Standard	41nC	50ns/150ns	480V, 24A, 33 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXSH)
HGTP7N60B3D	Fairchild/ON Semiconductor	IGBT 600V 14A 60W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Power - Max: 60W Switching Energy: 160µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 7A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고16,068	600V	14A	56A	2.1V @ 15V, 7A	60W	160µJ (on), 120µJ (off)	Standard	23nC	26ns/130ns	480V, 7A, 50 Ohm, 15V	37ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
STGP3NB60F	STMicroelectronics	IGBT 600V 6A 68W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 6A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A Power - Max: 68W Switching Energy: 125µJ (off) Input Type: Standard Gate Charge: 16nC Td (on/off) @ 25°C: 12.5ns/105ns Test Condition: 480V, 3A, 10 Ohm, 15V Reverse Recovery Time (trr): 45ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고2,016	600V	6A	24A	2.4V @ 15V, 3A	68W	125µJ (off)	Standard	16nC	12.5ns/105ns	480V, 3A, 10 Ohm, 15V	45ns	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGX50N60AU1	IXYS	IGBT 600V 75A 300W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Power - Max: 300W Switching Energy: 4.8mJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 50ns/200ns Test Condition: 480V, 50A, 2.7 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	패키지: TO-3P-3 Full Pack	재고2,944	600V	75A	200A	2.7V @ 15V, 50A	300W	4.8mJ (off)	Standard	200nC	50ns/200ns	480V, 50A, 2.7 Ohm, 15V	50ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-247AD
IRGS6B60KPBF	Infineon Technologies	IGBT 600V 13A 90W D2PAK IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,488	600V	13A	26A	2.2V @ 15V, 5A	90W	110µJ (on), 135µJ (off)	Standard	18.2nC	25ns/215ns	400V, 5A, 100 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IXBT2N250	IXYS	IGBT 2500V 5A 32W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 5A Current - Collector Pulsed (Icm): 13A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A Power - Max: 32W Switching Energy: - Input Type: Standard Gate Charge: 10.6nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 920ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고6,784	2500V	5A	13A	3.5V @ 15V, 2A	32W	-	Standard	10.6nC	-	-	920ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IXGT15N120CD1	IXYS	IGBT 1200V 30A 150W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A Power - Max: 150W Switching Energy: 1.05mJ (off) Input Type: Standard Gate Charge: 69nC Td (on/off) @ 25°C: 25ns/150ns Test Condition: 960V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고6,912	1200V	30A	60A	3.8V @ 15V, 15A	150W	1.05mJ (off)	Standard	69nC	25ns/150ns	960V, 15A, 10 Ohm, 15V	40ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IXGP12N100AU1	IXYS	IGBT 1000V 24A 100W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A Power - Max: 100W Switching Energy: 4mJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 100ns/850ns Test Condition: 800V, 12A, 120 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고7,616	1000V	24A	48A	4V @ 15V, 12A	100W	4mJ (off)	Standard	65nC	100ns/850ns	800V, 12A, 120 Ohm, 15V	60ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
HGT1S12N60A4DS	Fairchild/ON Semiconductor	IGBT 600V 54A 167W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 167W Switching Energy: 55µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 17ns/96ns Test Condition: 390V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,840	600V	54A	96A	2.7V @ 15V, 12A	167W	55µJ (on), 50µJ (off)	Standard	78nC	17ns/96ns	390V, 12A, 10 Ohm, 15V	30ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
STGP15H60DF	STMicroelectronics	IGBT 600V 30A 115W TO220 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 115W Switching Energy: 136µJ (on), 207µJ (off) Input Type: Standard Gate Charge: 81nC Td (on/off) @ 25°C: 24.5ns/118ns Test Condition: 400V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): 103ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고4,544	600V	30A	60A	2V @ 15V, 15A	115W	136µJ (on), 207µJ (off)	Standard	81nC	24.5ns/118ns	400V, 15A, 10 Ohm, 15V	103ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
NGTB40N65IHRTG	ON Semiconductor	650V/40A RC IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,152	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IKW15N120T2FKSA1	Infineon Technologies	IGBT 1200V 30A 235W TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 235W Switching Energy: 2.05mJ Input Type: Standard Gate Charge: 93nC Td (on/off) @ 25°C: 32ns/362ns Test Condition: 600V, 15A, 41.8 Ohm, 15V Reverse Recovery Time (trr): 300ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고5,664	1200V	30A	60A	2.2V @ 15V, 15A	235W	2.05mJ	Standard	93nC	32ns/362ns	600V, 15A, 41.8 Ohm, 15V	300ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IXBT12N300	IXYS	IGBT 3000V 30A 160W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A Power - Max: 160W Switching Energy: - Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.4µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고7,632	3000V	30A	100A	3.2V @ 15V, 12A	160W	-	Standard	62nC	-	-	1.4µs	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
RGTV60TK65DGVC11	Rohm Semiconductor	IGBT TRNCH FIELD 650V 33A TO3PFM IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 33 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 76 W Switching Energy: 570µJ (on), 500µJ (off) Input Type: Standard Gate Charge: 64 nC Td (on/off) @ 25°C: 33ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 95 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	패키지: -	Request a Quote	650 V	33 A	120 A	1.9V @ 15V, 30A	76 W	570µJ (on), 500µJ (off)	Standard	64 nC	33ns/105ns	400V, 30A, 10Ohm, 15V	95 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-3PFM, SC-93-3	TO-3PFM
RJP4009ANS-01-Q5	Renesas Electronics Corporation	IGBT 400V 8VSON IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 9V @ 2.5V, 150A Power - Max: 1.8 W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Supplier Device Package: 8-VSON (3x4.4)	패키지: -	Request a Quote	400 V	-	150 A	9V @ 2.5V, 150A	1.8 W	-	Standard	-	-	-	-	-40°C ~ 150°C (TJ)	Surface Mount	8-VDFN	8-VSON (3x4.4)
SIGC14T60SNCX1SA6	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 31ns/261ns Test Condition: 400V, 15A, 21Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	31ns/261ns	400V, 15A, 21Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
RJH6075DPM-N0-T0	Renesas Electronics Corporation	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STB1081L3	onsemi	TRANS IGBT CHIP N-CH 380V 15A 4P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT40WR21-Q	Toshiba Semiconductor and Storage	IGBT 1350V 40A TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 80 A Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A Power - Max: 375 W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	패키지: -	재고126	1350 V	40 A	80 A	5.9V @ 15V, 40A	375 W	-	Standard	-	-	-	-	175°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)
FGB20N60SFD-F085	onsemi	IGBT FIELD STOP 600V 40A TO263 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A Power - Max: 208 W Switching Energy: 310µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 63 nC Td (on/off) @ 25°C: 10ns/90ns Test Condition: 400V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 111 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	패키지: -	재고2,328	600 V	40 A	60 A	2.85V @ 15V, 20A	208 W	310µJ (on), 130µJ (off)	Standard	63 nC	10ns/90ns	400V, 20A, 10Ohm, 15V	111 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)
BIDNW30N60H3	Bourns Inc.	IGBT TRENCH FS 600V 60A TO247NL IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 230 W Switching Energy: 1.85mJ (on), 450µJ (off) Input Type: Standard Gate Charge: 76 nC Td (on/off) @ 25°C: 30ns/67ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 28 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N-3L	패키지: -	재고8,238	600 V	60 A	120 A	2V @ 15V, 30A	230 W	1.85mJ (on), 450µJ (off)	Standard	76 nC	30ns/67ns	400V, 30A, 10Ohm, 15V	28 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247N-3L
IRGC100B120UB	Infineon Technologies	IGBT CHIP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	1200 V	100 A	-	3.5V @ 15V, 100A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
FGF65A3H	Sanken Electric USA Inc.	FIELD STOP IGBT WITH FRD 650V/30 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.73V @ 15V, 30A Power - Max: 72 W Switching Energy: 500µJ (on), 400µJ (off) Input Type: Standard Gate Charge: 60 nC Td (on/off) @ 25°C: 30ns/90ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 50 ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	패키지: -	Request a Quote	650 V	50 A	90 A	2.73V @ 15V, 30A	72 W	500µJ (on), 400µJ (off)	Standard	60 nC	30ns/90ns	400V, 30A, 10Ohm, 15V	50 ns	175°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PF
STB1081SL3G	onsemi	IGBT D2PAK 350V SPECIAL IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SGD8290NT4G	Littelfuse Inc.	IGBT N-CH 20A D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-