페이지 129 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  129/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SKP15N60XKSA1
Infineon Technologies

IGBT 600V 31A 139W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21 Ohm, 15V
  • Reverse Recovery Time (trr): 279ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고4,688
600V
31A
62A
2.4V @ 15V, 15A
139W
570µJ
Standard
76nC
32ns/234ns
400V, 15A, 21 Ohm, 15V
279ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IKD06N60R
Infineon Technologies

IGBT 600V 12A 100W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 330µJ
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 12ns/127ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,560
600V
12A
18A
2.1V @ 15V, 6A
100W
330µJ
Standard
48nC
12ns/127ns
400V, 6A, 23 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IRG4RC10UPBF
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 80µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 19ns/116ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,296
600V
8.5A
34A
2.6V @ 15V, 5A
38W
80µJ (on), 160µJ (off)
Standard
15nC
19ns/116ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
RJH60M2DPP-M0#T2
Renesas Electronics America

IGBT 600V 25A 33.8W TO-220FL

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 33.8W
  • Switching Energy: 180µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 32ns/70ns
  • Test Condition: 300V, 12A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FL
패키지: TO-220-3 Full Pack
재고6,896
600V
25A
-
2.5V @ 15V, 12A
33.8W
180µJ (on), 180µJ (off)
Standard
33nC
32ns/70ns
300V, 12A, 5 Ohm, 15V
85ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FL
STGW35NB60S
STMicroelectronics

IGBT 600V 70A 200W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 840µJ (on), 7.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 83nC
  • Td (on/off) @ 25°C: 92ns/1.1µs
  • Test Condition: 480V, 20A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고6,272
600V
70A
250A
1.7V @ 15V, 20A
200W
840µJ (on), 7.4mJ (off)
Standard
83nC
92ns/1.1µs
480V, 20A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXGT60N60C2
IXYS

IGBT 600V 75A 480W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 480W
  • Switching Energy: 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 146nC
  • Td (on/off) @ 25°C: 18ns/95ns
  • Test Condition: 400V, 50A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고5,376
600V
75A
300A
2.5V @ 15V, 50A
480W
480µJ (off)
Standard
146nC
18ns/95ns
400V, 50A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot STGW20NB60KD
STMicroelectronics

IGBT 600V 50A 170W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 170W
  • Switching Energy: 675µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 85nC
  • Td (on/off) @ 25°C: 39ns/105ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80.5ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고5,152
600V
50A
100A
2.8V @ 15V, 20A
170W
675µJ (on), 500µJ (off)
Standard
85nC
39ns/105ns
480V, 20A, 10 Ohm, 15V
80.5ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRG8CH97K10F
Infineon Technologies

IGBT 1200V 100A DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 600nC
  • Td (on/off) @ 25°C: 100ns/230ns
  • Test Condition: 600V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,448
1200V
-
-
2V @ 15V, 100A
-
-
Standard
600nC
100ns/230ns
600V, 100A, 1 Ohm, 15V
-
-
Surface Mount
Die
Die
hot IRGB8B60KPBF
Infineon Technologies

IGBT 600V 28A 167W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
  • Power - Max: 167W
  • Switching Energy: 160µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 23ns/140ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고11,244
600V
28A
26A
2.2V @ 15V, 8A
167W
160µJ (on), 160µJ (off)
Standard
18.2nC
23ns/140ns
400V, 5A, 100 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGK82N120A3
IXYS

IGBT 1200V 260A 1250W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 260A
  • Current - Collector Pulsed (Icm): 580A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
  • Power - Max: 1250W
  • Switching Energy: 5.5mJ (on), 12.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 34ns/265ns
  • Test Condition: 600V, 80A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
패키지: TO-264-3, TO-264AA
재고3,568
1200V
260A
580A
2.05V @ 15V, 82A
1250W
5.5mJ (on), 12.5mJ (off)
Standard
340nC
34ns/265ns
600V, 80A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
NGTB30N120IHRWG
ON Semiconductor

IGBT 1200V 60A 384W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 384W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: -/230ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고2,320
1200V
60A
120A
2.5V @ 15V, 30A
384W
700µJ (off)
Standard
225nC
-/230ns
600V, 30A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot HGTG20N60B3
Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 165W
  • Switching Energy: 475µJ (on), 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고34,356
600V
40A
160A
2V @ 15V, 20A
165W
475µJ (on), 1.05mJ (off)
Standard
80nC
-
480V, 20A, 10 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IKW50N60H3FKSA1
Infineon Technologies

IGBT 600V 100A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.36mJ
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 23ns/235ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,560
600V
100A
200A
2.3V @ 15V, 50A
333W
2.36mJ
Standard
315nC
23ns/235ns
400V, 50A, 7 Ohm, 15V
130ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKA15N60TXKSA1
Infineon Technologies

IGBT 600V 14.7A 35.7W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14.7A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 35.7W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 17ns/188ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3 Full Pack
재고14,628
600V
14.7A
45A
2.05V @ 15V, 15A
35.7W
570µJ
Standard
87nC
17ns/188ns
400V, 15A, 15 Ohm, 15V
34ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3
FGH40T120SMD_F155
Fairchild/ON Semiconductor

IGBT 1200V 80A 555W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 555W
  • Switching Energy: 2.7mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 40ns/475ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,688
1200V
80A
160A
2.4V @ 15V, 40A
555W
2.7mJ (on), 1.1mJ (off)
Standard
370nC
40ns/475ns
600V, 40A, 10 Ohm, 15V
65ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGWA15M120DF3
STMicroelectronics

IGBT 1200V 30A 259W

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: 259W
  • Switching Energy: 550µJ (on), 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 26ns/122ns
  • Test Condition: 600V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 270ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: TO-247-3
재고15,612
1200V
30A
60A
2.3V @ 15V, 15A
259W
550µJ (on), 850µJ (off)
Standard
53nC
26ns/122ns
600V, 15A, 22 Ohm, 15V
270ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
RJH60F7ADPK-00#T0
Renesas Electronics America

IGBT 600V 90A 328.9W TO-3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
  • Power - Max: 328.9W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 63ns/142ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고7,344
600V
90A
-
1.75V @ 15V, 50A
328.9W
-
Standard
-
63ns/142ns
400V, 30A, 5 Ohm, 15V
140ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot IRGP50B60PDPBF
Infineon Technologies

IGBT 600V 75A 370W TO247AC

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
  • Power - Max: 370W
  • Switching Energy: 360µJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 34ns/130ns
  • Test Condition: 390V, 33A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고59,136
600V
75A
150A
2.6V @ 15V, 50A
370W
360µJ (on), 380µJ (off)
Standard
240nC
34ns/130ns
390V, 33A, 3.3 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IKW40N120T2
Infineon Technologies

IGBT 1200V 75A 480W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 480W
  • Switching Energy: 5.25mJ
  • Input Type: Standard
  • Gate Charge: 192nC
  • Td (on/off) @ 25°C: 33ns/314ns
  • Test Condition: 600V, 40A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 258ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고193,200
1200V
75A
160A
2.2V @ 15V, 40A
480W
5.25mJ
Standard
192nC
33ns/314ns
600V, 40A, 12 Ohm, 15V
258ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
NTE3323
NTE Electronics, Inc

IGBT-1200V 25AMP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 200 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 400ns/800ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: -
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1200 V
25 A
50 A
4V @ 15V, 25A
200 W
-
Standard
-
400ns/800ns
-
-
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
FGPF4533
Fairchild Semiconductor

IGBT

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 28.4 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: -
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330 V
-
200 A
1.8V @ 15V, 50A
28.4 W
-
Standard
44 nC
-
-
-
-
Through Hole
TO-220-3 Full Pack
TO-220F
AFGHL40T65RQDN
onsemi

IGBT FIELD STOP 650V 46A TO247-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 46 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
  • Power - Max: 288 W
  • Switching Energy: 1.14mJ (on), 740µJ (off)
  • Input Type: Standard
  • Gate Charge: 47 nC
  • Td (on/off) @ 25°C: 26ns/77ns
  • Test Condition: 400V, 40A, 2.5Ohm, 15V
  • Reverse Recovery Time (trr): 44 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
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650 V
46 A
160 A
1.82V @ 15V, 40A
288 W
1.14mJ (on), 740µJ (off)
Standard
47 nC
26ns/77ns
400V, 40A, 2.5Ohm, 15V
44 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGT16NL65DGTL
Rohm Semiconductor

IGBT TRENCH FIELD 650V 16A LPDS

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 94 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 13ns/33ns
  • Test Condition: 400V, 8A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
패키지: -
재고3,000
650 V
16 A
24 A
2.1V @ 15V, 8A
94 W
-
Standard
21 nC
13ns/33ns
400V, 8A, 10Ohm, 15V
42 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
STGYA50M120DF3
STMicroelectronics

IGBT TRENCH FS 1200V 100A MAX247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 535 W
  • Switching Energy: 2mJ (on), 3.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 194 nC
  • Td (on/off) @ 25°C: 38ns/258ns
  • Test Condition: 600V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 325 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: MAX247™
패키지: -
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1200 V
100 A
200 A
2.2V @ 15V, 50A
535 W
2mJ (on), 3.2mJ (off)
Standard
194 nC
38ns/258ns
600V, 50A, 10Ohm, 15V
325 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
MAX247™
IGC27T120T8QX1SA1
Infineon Technologies

IGBT 1200V 25A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 25A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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1200 V
-
75 A
2.42V @ 15V, 25A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
RGTH00TK65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 35A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 35 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 72 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 225 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,344
650 V
35 A
200 A
2.1V @ 15V, 50A
72 W
-
Standard
94 nC
39ns/143ns
400V, 50A, 10Ohm, 15V
225 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
IXXX140N65B4H1
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 340 A
  • Current - Collector Pulsed (Icm): 840 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
  • Power - Max: 1200 W
  • Switching Energy: 5.75mJ (on), 2.67mJ (off)
  • Input Type: Standard
  • Gate Charge: 250 nC
  • Td (on/off) @ 25°C: 54ns/270ns
  • Test Condition: 400V, 100A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 105 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
패키지: -
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650 V
340 A
840 A
1.9V @ 15V, 120A
1200 W
5.75mJ (on), 2.67mJ (off)
Standard
250 nC
54ns/270ns
400V, 100A, 4.7Ohm, 15V
105 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
DGTD120T25S1PT
Diodes Incorporated

IGBT 1200V-X TO247 TUBE 0.45K

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 348 W
  • Switching Energy: 1.44mJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 204 nC
  • Td (on/off) @ 25°C: 73ns/269ns
  • Test Condition: 600V, 25A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고1,341
1200 V
50 A
100 A
2.4V @ 15V, 25A
348 W
1.44mJ (on), 550µJ (off)
Standard
204 nC
73ns/269ns
600V, 25A, 23Ohm, 15V
100 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247