페이지 139 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

IRG4IBC30FD

Infineon Technologies

IGBT 600V 20.3A 45W TO220FP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20.3A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Power - Max: 45W
Switching Energy: 630µJ (on), 1.39mJ (off)
Input Type: Standard
Gate Charge: 51nC
Td (on/off) @ 25°C: 42ns/230ns
Test Condition: 480V, 17A, 23 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak

패키지: TO-220-3 Full Pack

재고4,176

600V

20.3A

120A

1.8V @ 15V, 17A

45W

630µJ (on), 1.39mJ (off)

Standard

51nC

42ns/230ns

480V, 17A, 23 Ohm, 15V

42ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220AB Full-Pak

RJH65D27BDPQ-A0#T0

Renesas Electronics America

IGBT 650V

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,512

-

IXGT28N60BD1

IXYS

IGBT 600V 40A 150W TO268

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
Power - Max: 150W
Switching Energy: 2mJ (off)
Input Type: Standard
Gate Charge: 68nC
Td (on/off) @ 25°C: 15ns/175ns
Test Condition: 480V, 28A, 10 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고2,688

600V

40A

80A

2V @ 15V, 28A

150W

2mJ (off)

Standard

68nC

15ns/175ns

480V, 28A, 10 Ohm, 15V

25ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

IXGP12N60CD1

IXYS

IGBT 600V 24A 100W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 48A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 100W
Switching Energy: 90µJ (off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 480V, 12A, 18 Ohm, 15V
Reverse Recovery Time (trr): 35ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고32,232

600V

24A

48A

2.7V @ 15V, 12A

100W

90µJ (off)

Standard

32nC

20ns/60ns

480V, 12A, 18 Ohm, 15V

35ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IXGH16N60C2D1

IXYS

IGBT 600V 40A 150W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Power - Max: 150W
Switching Energy: 160µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 25nC
Td (on/off) @ 25°C: 16ns/75ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고6,112

600V

40A

100A

3V @ 15V, 12A

150W

160µJ (on), 90µJ (off)

Standard

25nC

16ns/75ns

400V, 12A, 22 Ohm, 15V

30ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

IKW40N65H5AXKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 74A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 250W
Switching Energy: 380µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 92nC
Td (on/off) @ 25°C: 20ns/153ns
Test Condition: 400V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr): 75ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고2,336

650V

74A

120A

2.1V @ 15V, 40A

250W

380µJ (on), 120µJ (off)

Standard

92nC

20ns/153ns

400V, 20A, 15 Ohm, 15V

75ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

APT75GN120B2G

Microsemi Corporation

IGBT 1200V 200A 833W TMAX

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 833W
Switching Energy: 8045µJ (on), 7640µJ (off)
Input Type: Standard
Gate Charge: 425nC
Td (on/off) @ 25°C: 60ns/620ns
Test Condition: 800V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

패키지: TO-247-3 Variant

재고2,768

1200V

200A

225A

2.1V @ 15V, 75A

833W

8045µJ (on), 7640µJ (off)

Standard

425nC

60ns/620ns

800V, 75A, 1 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3 Variant

-

IXGR50N90B2D1

IXYS

IGBT 900V 40A 100W ISOPLUS247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
Power - Max: 100W
Switching Energy: 4.7mJ (off)
Input Type: Standard
Gate Charge: 135nC
Td (on/off) @ 25°C: 20ns/350ns
Test Condition: 720V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

패키지: ISOPLUS247?

재고6,032

900V

40A

200A

2.9V @ 15V, 50A

100W

4.7mJ (off)

Standard

135nC

20ns/350ns

720V, 50A, 5 Ohm, 15V

200ns

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS247?

RJH60T04DPQ-A1#T0

Renesas Electronics America

IGBT TRENCH 600V 60A TO247A

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
Power - Max: 208.3W
Switching Energy: -
Input Type: Standard
Gate Charge: 87nC
Td (on/off) @ 25°C: 54ns/136ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247A

패키지: TO-247-3

재고6,192

600V

60A

-

1.95V @ 15V, 30A

208.3W

-

Standard

87nC

54ns/136ns

400V, 30A, 10 Ohm, 15V

100ns

150°C (TJ)

Through Hole

TO-247-3

TO-247A

STGW40NC60WD

STMicroelectronics

IGBT 600V 70A 250W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 230A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: 250W
Switching Energy: 302µJ (on), 349µJ (off)
Input Type: Standard
Gate Charge: 126nC
Td (on/off) @ 25°C: 33ns/168ns
Test Condition: 390V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 45ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고12,324

600V

70A

230A

2.5V @ 15V, 30A

250W

302µJ (on), 349µJ (off)

Standard

126nC

33ns/168ns

390V, 30A, 10 Ohm, 15V

45ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

NGTG25N120FL2WG

ON Semiconductor

IGBT 1200V 25A TO-247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Power - Max: 385W
Switching Energy: 1.95mJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 178nC
Td (on/off) @ 25°C: 87ns/179ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고7,744

1200V

50A

100A

2.4V @ 15V, 25A

385W

1.95mJ (on), 600µJ (off)

Standard

178nC

87ns/179ns

600V, 25A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

IXGH12N120A3

IXYS

IGBT 1200V 22A 100W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 22A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Power - Max: 100W
Switching Energy: -
Input Type: Standard
Gate Charge: 20.4nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고5,536

1200V

22A

60A

3V @ 15V, 12A

100W

-

Standard

20.4nC

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

IXBH40N160

IXYS

IGBT 1600V 33A 350W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1600V
Current - Collector (Ic) (Max): 33A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 7.1V @ 15V, 20A
Power - Max: 350W
Switching Energy: -
Input Type: Standard
Gate Charge: 130nC
Td (on/off) @ 25°C: -
Test Condition: 960V, 20A, 22 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)

패키지: TO-247-3

재고34,860

1600V

33A

40A

7.1V @ 15V, 20A

350W

-

Standard

130nC

-

960V, 20A, 22 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXBH)

FGH40N120ANTU

Fairchild/ON Semiconductor

IGBT 1200V 64A 417W TO247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 64A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Power - Max: 417W
Switching Energy: 2.3mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 220nC
Td (on/off) @ 25°C: 15ns/110ns
Test Condition: 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고6,192

1200V

64A

160A

3.2V @ 15V, 40A

417W

2.3mJ (on), 1.1mJ (off)

Standard

220nC

15ns/110ns

600V, 40A, 5 Ohm, 15V

-

Through Hole

TO-247-3

TO-247

STGD8NC60KDT4

STMicroelectronics

IGBT 600V 15A 62W DPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Power - Max: 62W
Switching Energy: 55µJ (on), 85µJ (off)
Input Type: Standard
Gate Charge: 19nC
Td (on/off) @ 25°C: 17ns/72ns
Test Condition: 390V, 3A, 10 Ohm, 15V
Reverse Recovery Time (trr): 23.5ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고240,000

600V

15A

30A

2.75V @ 15V, 3A

62W

55µJ (on), 85µJ (off)

Standard

19nC

17ns/72ns

390V, 3A, 10 Ohm, 15V

23.5ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

IRGP4068DPBF

Infineon Technologies

IGBT 600V 96A 330W TO247AC

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 96A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Power - Max: 330W
Switching Energy: 1.28mJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: -/145ns
Test Condition: 400V, 48A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고900,360

600V

96A

144A

2.14V @ 15V, 48A

330W

1.28mJ (off)

Standard

95nC

-/145ns

400V, 48A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AC

IKW15N120H3

Infineon Technologies

IGBT 1200V 30A 217W TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Power - Max: 217W
Switching Energy: 1.55mJ
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 21ns/260ns
Test Condition: 600V, 15A, 35 Ohm, 15V
Reverse Recovery Time (trr): 260ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고116,100

1200V

30A

60A

2.4V @ 15V, 15A

217W

1.55mJ

Standard

75nC

21ns/260ns

600V, 15A, 35 Ohm, 15V

260ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

APT33GF120BRG

Microsemi Corporation

IGBT 1200V 52A 297W TO247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 52A
Current - Collector Pulsed (Icm): 104A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Power - Max: 297W
Switching Energy: 2.8mJ (on), 2.8mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 25ns/210ns
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]

패키지: TO-247-3

재고7,224

1200V

52A

104A

3.2V @ 15V, 25A

297W

2.8mJ (on), 2.8mJ (off)

Standard

170nC

25ns/210ns

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247 [B]

IXGT32N120A3

IXYS

IGBT 1200V 75A 300W TO268

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 230A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Power - Max: 300W
Switching Energy: -
Input Type: Standard
Gate Charge: 89nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고7,068

1200V

75A

230A

2.35V @ 15V, 32A

300W

-

Standard

89nC

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

STGB40V60F

STMicroelectronics

IGBT 600V 80A 283W D2PAK

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 283W
Switching Energy: 456µJ (on), 411µJ (off)
Input Type: Standard
Gate Charge: 226nC
Td (on/off) @ 25°C: 52ns/208ns
Test Condition: 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고18,012

600V

80A

160A

2.3V @ 15V, 40A

283W

456µJ (on), 411µJ (off)

Standard

226nC

52ns/208ns

400V, 40A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

HGTG30N60A4

Fairchild/ON Semiconductor

IGBT 600V 75A 463W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
Power - Max: 463W
Switching Energy: 280µJ (on), 240µJ (off)
Input Type: Standard
Gate Charge: 225nC
Td (on/off) @ 25°C: 25ns/150ns
Test Condition: 390V, 30A, 3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고120,384

600V

75A

240A

2.6V @ 15V, 30A

463W

280µJ (on), 240µJ (off)

Standard

225nC

25ns/150ns

390V, 30A, 3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

MGY30N60D

onsemi

TRANS IGBT CHIP N-CH 600V 50A 3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

RGT00TS65DGC11

Rohm Semiconductor

650V 50A FIELD STOP TRENCH IGBT

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Power - Max: 277 W
Switching Energy: -
Input Type: Standard
Gate Charge: 94 nC
Td (on/off) @ 25°C: 42ns/137ns
Test Condition: 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 54 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247N

패키지: -

재고957

650 V

85 A

150 A

2.1V @ 15V, 50A

277 W

-

Standard

94 nC

42ns/137ns

400V, 50A, 10Ohm, 15V

54 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247N

IKN04N60RC2ATMA1

Infineon Technologies

IGBT 600V 7.5A SOT223-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.5 A
Current - Collector Pulsed (Icm): 12 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
Power - Max: 6.8 W
Switching Energy: 95µJ (on), 62µJ (off)
Input Type: Standard
Gate Charge: 24 nC
Td (on/off) @ 25°C: 8ns/126ns
Test Condition: 400V, 4A, 49Ohm, 15V
Reverse Recovery Time (trr): 39 ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-3

패키지: -

재고8,592

600 V

7.5 A

12 A

2.3V @ 15V, 4A

6.8 W

95µJ (on), 62µJ (off)

Standard

24 nC

8ns/126ns

400V, 4A, 49Ohm, 15V

39 ns

-40°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-3

SIGC25T60UNX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 16ns/122ns
Test Condition: 400V, 30A, 1.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

30 A

90 A

3.15V @ 15V, 30A

-

Standard

-

16ns/122ns

400V, 30A, 1.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SGB15N40CLT4

onsemi

IGBT 400V D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

AIMDQ75R140M1HXUMA1

Infineon Technologies

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,250

-

HGTD3N60B3S9A

Harris Corporation

7A, 600V, UFS N-CHANNEL IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7 A
Current - Collector Pulsed (Icm): 20 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
Power - Max: 33.3 W
Switching Energy: 66µJ (on), 88µJ (off)
Input Type: Standard
Gate Charge: 21 nC
Td (on/off) @ 25°C: 18ns/105ns
Test Condition: 480V, 3.5A, 82Ohm, 15V
Reverse Recovery Time (trr): 16 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)

패키지: -

Request a Quote

600 V

7 A

20 A

2.1V @ 15V, 3.5A

33.3 W

66µJ (on), 88µJ (off)

Standard

21 nC

18ns/105ns

480V, 3.5A, 82Ohm, 15V

16 ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG4IBC30FD	Infineon Technologies	IGBT 600V 20.3A 45W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20.3A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 45W Switching Energy: 630µJ (on), 1.39mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 42ns/230ns Test Condition: 480V, 17A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	패키지: TO-220-3 Full Pack	재고4,176	600V	20.3A	120A	1.8V @ 15V, 17A	45W	630µJ (on), 1.39mJ (off)	Standard	51nC	42ns/230ns	480V, 17A, 23 Ohm, 15V	42ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
RJH65D27BDPQ-A0#T0	Renesas Electronics America	IGBT 650V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,512	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXGT28N60BD1	IXYS	IGBT 600V 40A 150W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A Power - Max: 150W Switching Energy: 2mJ (off) Input Type: Standard Gate Charge: 68nC Td (on/off) @ 25°C: 15ns/175ns Test Condition: 480V, 28A, 10 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고2,688	600V	40A	80A	2V @ 15V, 28A	150W	2mJ (off)	Standard	68nC	15ns/175ns	480V, 28A, 10 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IXGP12N60CD1	IXYS	IGBT 600V 24A 100W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 90µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 20ns/60ns Test Condition: 480V, 12A, 18 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고32,232	600V	24A	48A	2.7V @ 15V, 12A	100W	90µJ (off)	Standard	32nC	20ns/60ns	480V, 12A, 18 Ohm, 15V	35ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGH16N60C2D1	IXYS	IGBT 600V 40A 150W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Power - Max: 150W Switching Energy: 160µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 16ns/75ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고6,112	600V	40A	100A	3V @ 15V, 12A	150W	160µJ (on), 90µJ (off)	Standard	25nC	16ns/75ns	400V, 12A, 22 Ohm, 15V	30ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IKW40N65H5AXKSA1	Infineon Technologies	IGBT 650V 74A 255W PG-TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 74A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 250W Switching Energy: 380µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 92nC Td (on/off) @ 25°C: 20ns/153ns Test Condition: 400V, 20A, 15 Ohm, 15V Reverse Recovery Time (trr): 75ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고2,336	650V	74A	120A	2.1V @ 15V, 40A	250W	380µJ (on), 120µJ (off)	Standard	92nC	20ns/153ns	400V, 20A, 15 Ohm, 15V	75ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
APT75GN120B2G	Microsemi Corporation	IGBT 1200V 200A 833W TMAX IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 833W Switching Energy: 8045µJ (on), 7640µJ (off) Input Type: Standard Gate Charge: 425nC Td (on/off) @ 25°C: 60ns/620ns Test Condition: 800V, 75A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	패키지: TO-247-3 Variant	재고2,768	1200V	200A	225A	2.1V @ 15V, 75A	833W	8045µJ (on), 7640µJ (off)	Standard	425nC	60ns/620ns	800V, 75A, 1 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-
IXGR50N90B2D1	IXYS	IGBT 900V 40A 100W ISOPLUS247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A Power - Max: 100W Switching Energy: 4.7mJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/350ns Test Condition: 720V, 50A, 5 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	패키지: ISOPLUS247?	재고6,032	900V	40A	200A	2.9V @ 15V, 50A	100W	4.7mJ (off)	Standard	135nC	20ns/350ns	720V, 50A, 5 Ohm, 15V	200ns	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
RJH60T04DPQ-A1#T0	Renesas Electronics America	IGBT TRENCH 600V 60A TO247A IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A Power - Max: 208.3W Switching Energy: - Input Type: Standard Gate Charge: 87nC Td (on/off) @ 25°C: 54ns/136ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247A	패키지: TO-247-3	재고6,192	600V	60A	-	1.95V @ 15V, 30A	208.3W	-	Standard	87nC	54ns/136ns	400V, 30A, 10 Ohm, 15V	100ns	150°C (TJ)	Through Hole	TO-247-3	TO-247A
STGW40NC60WD	STMicroelectronics	IGBT 600V 70A 250W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 230A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 250W Switching Energy: 302µJ (on), 349µJ (off) Input Type: Standard Gate Charge: 126nC Td (on/off) @ 25°C: 33ns/168ns Test Condition: 390V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 45ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고12,324	600V	70A	230A	2.5V @ 15V, 30A	250W	302µJ (on), 349µJ (off)	Standard	126nC	33ns/168ns	390V, 30A, 10 Ohm, 15V	45ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTG25N120FL2WG	ON Semiconductor	IGBT 1200V 25A TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 385W Switching Energy: 1.95mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 178nC Td (on/off) @ 25°C: 87ns/179ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고7,744	1200V	50A	100A	2.4V @ 15V, 25A	385W	1.95mJ (on), 600µJ (off)	Standard	178nC	87ns/179ns	600V, 25A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXGH12N120A3	IXYS	IGBT 1200V 22A 100W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 22A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Power - Max: 100W Switching Energy: - Input Type: Standard Gate Charge: 20.4nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고5,536	1200V	22A	60A	3V @ 15V, 12A	100W	-	Standard	20.4nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IXBH40N160	IXYS	IGBT 1600V 33A 350W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1600V Current - Collector (Ic) (Max): 33A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 7.1V @ 15V, 20A Power - Max: 350W Switching Energy: - Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: - Test Condition: 960V, 20A, 22 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	패키지: TO-247-3	재고34,860	1600V	33A	40A	7.1V @ 15V, 20A	350W	-	Standard	130nC	-	960V, 20A, 22 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXBH)
FGH40N120ANTU	Fairchild/ON Semiconductor	IGBT 1200V 64A 417W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 64A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A Power - Max: 417W Switching Energy: 2.3mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 15ns/110ns Test Condition: 600V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고6,192	1200V	64A	160A	3.2V @ 15V, 40A	417W	2.3mJ (on), 1.1mJ (off)	Standard	220nC	15ns/110ns	600V, 40A, 5 Ohm, 15V	-	-	Through Hole	TO-247-3	TO-247
STGD8NC60KDT4	STMicroelectronics	IGBT 600V 15A 62W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A Power - Max: 62W Switching Energy: 55µJ (on), 85µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 17ns/72ns Test Condition: 390V, 3A, 10 Ohm, 15V Reverse Recovery Time (trr): 23.5ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고240,000	600V	15A	30A	2.75V @ 15V, 3A	62W	55µJ (on), 85µJ (off)	Standard	19nC	17ns/72ns	390V, 3A, 10 Ohm, 15V	23.5ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
IRGP4068DPBF	Infineon Technologies	IGBT 600V 96A 330W TO247AC IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 144A Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Power - Max: 330W Switching Energy: 1.28mJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: -/145ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고900,360	600V	96A	144A	2.14V @ 15V, 48A	330W	1.28mJ (off)	Standard	95nC	-/145ns	400V, 48A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC
IKW15N120H3	Infineon Technologies	IGBT 1200V 30A 217W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 217W Switching Energy: 1.55mJ Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 21ns/260ns Test Condition: 600V, 15A, 35 Ohm, 15V Reverse Recovery Time (trr): 260ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고116,100	1200V	30A	60A	2.4V @ 15V, 15A	217W	1.55mJ	Standard	75nC	21ns/260ns	600V, 15A, 35 Ohm, 15V	260ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
APT33GF120BRG	Microsemi Corporation	IGBT 1200V 52A 297W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 52A Current - Collector Pulsed (Icm): 104A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Power - Max: 297W Switching Energy: 2.8mJ (on), 2.8mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 25ns/210ns Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	패키지: TO-247-3	재고7,224	1200V	52A	104A	3.2V @ 15V, 25A	297W	2.8mJ (on), 2.8mJ (off)	Standard	170nC	25ns/210ns	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]
IXGT32N120A3	IXYS	IGBT 1200V 75A 300W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 230A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A Power - Max: 300W Switching Energy: - Input Type: Standard Gate Charge: 89nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고7,068	1200V	75A	230A	2.35V @ 15V, 32A	300W	-	Standard	89nC	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
STGB40V60F	STMicroelectronics	IGBT 600V 80A 283W D2PAK IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 283W Switching Energy: 456µJ (on), 411µJ (off) Input Type: Standard Gate Charge: 226nC Td (on/off) @ 25°C: 52ns/208ns Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고18,012	600V	80A	160A	2.3V @ 15V, 40A	283W	456µJ (on), 411µJ (off)	Standard	226nC	52ns/208ns	400V, 40A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
HGTG30N60A4	Fairchild/ON Semiconductor	IGBT 600V 75A 463W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A Power - Max: 463W Switching Energy: 280µJ (on), 240µJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: 25ns/150ns Test Condition: 390V, 30A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고120,384	600V	75A	240A	2.6V @ 15V, 30A	463W	280µJ (on), 240µJ (off)	Standard	225nC	25ns/150ns	390V, 30A, 3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
MGY30N60D	onsemi	TRANS IGBT CHIP N-CH 600V 50A 3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RGT00TS65DGC11	Rohm Semiconductor	650V 50A FIELD STOP TRENCH IGBT IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 85 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 277 W Switching Energy: - Input Type: Standard Gate Charge: 94 nC Td (on/off) @ 25°C: 42ns/137ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 54 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: -	재고957	650 V	85 A	150 A	2.1V @ 15V, 50A	277 W	-	Standard	94 nC	42ns/137ns	400V, 50A, 10Ohm, 15V	54 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
IKN04N60RC2ATMA1	Infineon Technologies	IGBT 600V 7.5A SOT223-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 7.5 A Current - Collector Pulsed (Icm): 12 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A Power - Max: 6.8 W Switching Energy: 95µJ (on), 62µJ (off) Input Type: Standard Gate Charge: 24 nC Td (on/off) @ 25°C: 8ns/126ns Test Condition: 400V, 4A, 49Ohm, 15V Reverse Recovery Time (trr): 39 ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-3	패키지: -	재고8,592	600 V	7.5 A	12 A	2.3V @ 15V, 4A	6.8 W	95µJ (on), 62µJ (off)	Standard	24 nC	8ns/126ns	400V, 4A, 49Ohm, 15V	39 ns	-40°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-3
SIGC25T60UNX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 16ns/122ns Test Condition: 400V, 30A, 1.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	30 A	90 A	3.15V @ 15V, 30A	-	-	Standard	-	16ns/122ns	400V, 30A, 1.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SGB15N40CLT4	onsemi	IGBT 400V D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMDQ75R140M1HXUMA1	Infineon Technologies	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,250	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HGTD3N60B3S9A	Harris Corporation	7A, 600V, UFS N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 7 A Current - Collector Pulsed (Icm): 20 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A Power - Max: 33.3 W Switching Energy: 66µJ (on), 88µJ (off) Input Type: Standard Gate Charge: 21 nC Td (on/off) @ 25°C: 18ns/105ns Test Condition: 480V, 3.5A, 82Ohm, 15V Reverse Recovery Time (trr): 16 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	패키지: -	Request a Quote	600 V	7 A	20 A	2.1V @ 15V, 3.5A	33.3 W	66µJ (on), 88µJ (off)	Standard	21 nC	18ns/105ns	480V, 3.5A, 82Ohm, 15V	16 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)