트랜지스터 - IGBT - 단일

SGW15N120FKSA1

Infineon Technologies

IGBT 1200V 30A 198W TO247-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 52A
• Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
• Power - Max: 198W
• Switching Energy: 1.9mJ
• Input Type: Standard
• Gate Charge: 130nC
• Td (on/off) @ 25°C: 18ns/580ns
• Test Condition: 800V, 15A, 33 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

IHD06N60RA

Infineon Technologies

IGBT 600V 12A 88W TO252-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 6A
• Power - Max: 88W
• Switching Energy: 150µJ
• Input Type: Standard
• Gate Charge: 42nC
• Td (on/off) @ 25°C: 25ns/125ns
• Test Condition: 400V, 6A, 14.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRG4PC30U

Infineon Technologies

IGBT 600V 23A 100W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): 92A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 160µJ (on), 200µJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 17ns/78ns
• Test Condition: 480V, 12A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

FGPF30N30TDTU

Fairchild/ON Semiconductor

IGBT 300V 44.6W TO220F

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 10A
• Power - Max: 44.6W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 65nC
• Td (on/off) @ 25°C: 22ns/130ns
• Test Condition: 200V, 20A, 20 Ohm, 15V
• Reverse Recovery Time (trr): 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

IXST30N60BD1

IXYS

IGBT 600V 55A 200W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): 110A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
• Power - Max: 200W
• Switching Energy: 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 30ns/150ns
• Test Condition: 480V, 30A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT20GF120BRG

Microsemi Corporation

IGBT 1200V 32A 200W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 32A
• Current - Collector Pulsed (Icm): 64A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
• Power - Max: 200W
• Switching Energy: 2.7mJ
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: 17ns/105ns
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

패키지: TO-247-3

STGD3NB60HDT4

STMicroelectronics

IGBT 600V 10A 50W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 50W
• Switching Energy: 33µJ (off)
• Input Type: Standard
• Gate Charge: 21nC
• Td (on/off) @ 25°C: 5ns/53ns
• Test Condition: 480V, 3A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 95ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IXGH30N60BD1

IXYS

IGBT 600V 60A 200W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
• Power - Max: 200W
• Switching Energy: 1mJ (off)
• Input Type: Standard
• Gate Charge: 110nC
• Td (on/off) @ 25°C: 25ns/130ns
• Test Condition: 480V, 30A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

IGW50N65H5AXKSA1

Infineon Technologies

IGBT 650V TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 270W
• Switching Energy: 450µJ (on), 160µJ (off)
• Input Type: Standard
• Gate Charge: 116nC
• Td (on/off) @ 25°C: 21ns/173ns
• Test Condition: 400V, 25A, 12 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

IRG4BC10KDPBF

Infineon Technologies

IGBT 600V 9A 38W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
• Power - Max: 38W
• Switching Energy: 250µJ (on), 140µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 49ns/97ns
• Test Condition: 480V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IXYR100N120C3

IXYS

IGBT 1200V 104A 484W ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 104A
• Current - Collector Pulsed (Icm): 480A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
• Power - Max: 484W
• Switching Energy: 6.5mJ (on), 2.9mJ (off)
• Input Type: Standard
• Gate Charge: 270nC
• Td (on/off) @ 25°C: 32ns/123ns
• Test Condition: 600V, 100A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISOPLUS247?

패키지: TO-247-3

APT54GA60BD30

Microsemi Corporation

IGBT 600V 96A 416W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 96A
• Current - Collector Pulsed (Icm): 161A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
• Power - Max: 416W
• Switching Energy: 534µJ (on), 466µJ (off)
• Input Type: Standard
• Gate Charge: 28nC
• Td (on/off) @ 25°C: 17ns/112ns
• Test Condition: 400V, 32A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

패키지: TO-247-3

IXGQ150N30TCD1

IXYS

IGBT 300V 150A TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

IXBH5N160G

IXYS

IGBT 1600V 5.7A 68W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1600V
• Current - Collector (Ic) (Max): 5.7A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 7.2V @ 15V, 3A
• Power - Max: 68W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 26nC
• Td (on/off) @ 25°C: -
• Test Condition: 960V, 3A, 47 Ohm, 10V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXBH)

패키지: TO-247-3

STGF20V60DF

STMicroelectronics

IGBT BIPO 600V 20A TO-220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

FGH40N65UFDTU

Fairchild/ON Semiconductor

IGBT 650V 80A 290W TO247

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
• Power - Max: 290W
• Switching Energy: 1.19mJ (on), 460µJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 24ns/112ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 45ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

IGW75N60TFKSA1

Infineon Technologies

IGBT 600V 150A 428W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
• Power - Max: 428W
• Switching Energy: 4.5mJ
• Input Type: Standard
• Gate Charge: 470nC
• Td (on/off) @ 25°C: 33ns/330ns
• Test Condition: 400V, 75A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

CSM350KN

IXYS

DISC IGBT XPT-GENX3 TO-264(3)

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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IXA4I1200UC-TUB

IXYS

DISC IGBT XPT-GENX3 TO-252D

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 9 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
• Power - Max: 45 W
• Switching Energy: 400µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 12 nC
• Td (on/off) @ 25°C: 70ns/250ns
• Test Condition: 600V, 3A, 330Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

패키지: -

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IXGA12N120A3-TRL

IXYS

IXGA12N120A3 TRL

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 22 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
• Power - Max: 100 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 20.4 nC
• Td (on/off) @ 25°C: 35ns/62ns
• Test Condition: 960V, 12A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

패키지: -

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STGW50H65DFB2-4

STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 5

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 86 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 272 W
• Switching Energy: 629µJ (on), 478µJ (off)
• Input Type: Standard
• Gate Charge: 151 nC
• Td (on/off) @ 25°C: 18ns/128ns
• Test Condition: 400V, 50A, 12Ohm, 15V
• Reverse Recovery Time (trr): 92 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: TO-247-4

패키지: -

DGTD65T60S2PT

Diodes Incorporated

IGBT 600V-X TO247 TUBE 0.45K

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 180 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
• Power - Max: 428 W
• Switching Energy: 920µJ (on), 530µJ (off)
• Input Type: Standard
• Gate Charge: 95 nC
• Td (on/off) @ 25°C: 42ns/142ns
• Test Condition: 400V, 60A, 7Ohm, 15V
• Reverse Recovery Time (trr): 205 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: -

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RGCL60TS60GC13

Rohm Semiconductor

IGBT TRNCH FIELD 600V 48A TO247G

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 48 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
• Power - Max: 111 W
• Switching Energy: 770µJ (on), 1.11mJ (off)
• Input Type: Standard
• Gate Charge: 68 nC
• Td (on/off) @ 25°C: 44ns/186ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247G

패키지: -

SIGC18T60SNCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 36ns/250ns
• Test Condition: 400V, 20A, 16Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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IKQ50N120CH7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 71A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 71 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
• Power - Max: 398 W
• Switching Energy: 2.61mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 366 nC
• Td (on/off) @ 25°C: 40ns/323ns
• Test Condition: -
• Reverse Recovery Time (trr): 133 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-U01

패키지: -

IXYK110N120A4

IXYS

IGBT 1200V 110A GENX4 XPT TO-264

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 375 A
• Current - Collector Pulsed (Icm): 900 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
• Power - Max: 1360 W
• Switching Energy: 2.5mJ (on), 8.4mJ (off)
• Input Type: Standard
• Gate Charge: 305 nC
• Td (on/off) @ 25°C: 42ns/550ns
• Test Condition: 600V, 50A, 1.5Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXYK)

패키지: -

MGF65A4H

Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/40

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 65 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.37V @ 15V, 40A
• Power - Max: 288 W
• Switching Energy: 700µJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 75 nC
• Td (on/off) @ 25°C: 40ns/100ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 50 ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

패키지: -

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IHW30N135R5XKSA1

Infineon Technologies

IGBT TRENCH FS 1350V 60A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1350 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
• Power - Max: 330 W
• Switching Energy: 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 235 nC
• Td (on/off) @ 25°C: -/310ns
• Test Condition: 600V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: -