페이지 143 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  143/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
RJP4301APP-M0#T2
Renesas Electronics America

IGBT 430V TO200FL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A
  • Power - Max: 30W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 50ns/100ns
  • Test Condition: 300V, 200A, 30 Ohm, 26V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FL
패키지: TO-220-3 Full Pack
재고2,016
430V
-
200A
10V @ 26V, 200A
30W
-
Standard
-
50ns/100ns
300V, 200A, 30 Ohm, 26V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FL
hot IXGH31N60D1
IXYS

IGBT 600V 60A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A
  • Power - Max: 150W
  • Switching Energy: 6mJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 15ns/400ns
  • Test Condition: 480V, 31A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고390,000
600V
60A
80A
1.7V @ 15V, 31A
150W
6mJ (off)
Standard
80nC
15ns/400ns
480V, 31A, 10 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGH25N100AU1
IXYS

IGBT 1000V 50A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 200W
  • Switching Energy: 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 100ns/500ns
  • Test Condition: 800V, 25A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고7,840
1000V
50A
100A
4V @ 15V, 25A
200W
5mJ (off)
Standard
130nC
100ns/500ns
800V, 25A, 33 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGC12N60CD1
IXYS

IGBT 600V 15A 85W ISOPLUS220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 85W
  • Switching Energy: 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 20ns/60ns
  • Test Condition: 480V, 12A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS220?
  • Supplier Device Package: ISOPLUS220?
패키지: ISOPLUS220?
재고6,240
600V
15A
48A
2.7V @ 15V, 12A
85W
90µJ (off)
Standard
32nC
20ns/60ns
480V, 12A, 18 Ohm, 15V
35ns
-40°C ~ 150°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
IXGK60N60
IXYS

IGBT 600V 75A 300W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
  • Power - Max: 300W
  • Switching Energy: 8mJ (off)
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 50ns/300ns
  • Test Condition: 480V, 60A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
패키지: TO-264-3, TO-264AA
재고7,248
600V
75A
200A
1.7V @ 15V, 60A
300W
8mJ (off)
Standard
130nC
50ns/300ns
480V, 60A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
SGR6N60UFTM
Fairchild/ON Semiconductor

IGBT 600V 6A 30W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A
  • Power - Max: 30W
  • Switching Energy: 57µJ (on), 25µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 15ns/60ns
  • Test Condition: 300V, 3A, 80 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,056
600V
6A
25A
2.6V @ 15V, 3A
30W
57µJ (on), 25µJ (off)
Standard
15nC
15ns/60ns
300V, 3A, 80 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXA30RG1200DHGLB
IXYS

IGBT PHASELEG 1200V 30A SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 147W
  • Switching Energy: 2.5mJ (on), 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 70ns/250ns
  • Test Condition: 600V, 25A, 39 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD?.B
패키지: 9-SMD Module
재고7,088
1200V
43A
-
2.1V @ 15V, 25A
147W
2.5mJ (on), 3mJ (off)
Standard
76nC
70ns/250ns
600V, 25A, 39 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
9-SMD Module
ISOPLUS-SMPD?.B
IXDR30N120D1
IXYS

IGBT 1200V 50A 200W ISOPLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 4.6mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 30A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고7,264
1200V
50A
60A
2.9V @ 15V, 30A
200W
4.6mJ (on), 3.4mJ (off)
Standard
120nC
-
600V, 30A, 47 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGR60N60C3D1
IXYS

IGBT 600V 75A 170W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 260A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 170W
  • Switching Energy: 800µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 21ns/70ns
  • Test Condition: 480V, 40A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고2,672
600V
75A
260A
2.5V @ 15V, 40A
170W
800µJ (on), 450µJ (off)
Standard
115nC
21ns/70ns
480V, 40A, 3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
hot IXGH30N60C3
IXYS

IGBT 600V 60A 220W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 220W
  • Switching Energy: 270µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 16ns/42ns
  • Test Condition: 300V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고390,000
600V
60A
150A
3V @ 15V, 20A
220W
270µJ (on), 90µJ (off)
Standard
38nC
16ns/42ns
300V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
FGH50T65SQD_F155
Fairchild/ON Semiconductor

650V FS4 TRENCH IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 268W
  • Switching Energy: 180µJ (on), 45µJ (off)
  • Input Type: Standard
  • Gate Charge: 99nC
  • Td (on/off) @ 25°C: 22ns/105ns
  • Test Condition: 400V, 12.5A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고7,328
650V
100A
200A
2.1V @ 15V, 50A
268W
180µJ (on), 45µJ (off)
Standard
99nC
22ns/105ns
400V, 12.5A, 4.7 Ohm, 15V
31ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot SGP10N60RUFDTU
Fairchild/ON Semiconductor

IGBT 600V 16A 75W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
  • Power - Max: 75W
  • Switching Energy: 141µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 15ns/36ns
  • Test Condition: 300V, 10A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고21,348
600V
16A
30A
2.8V @ 15V, 10A
75W
141µJ (on), 215µJ (off)
Standard
30nC
15ns/36ns
300V, 10A, 20 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
RJH60M1DPP-M0#T2
Renesas Electronics America

IGBT 600V 16A 30W TO-220FL

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 8A
  • Power - Max: 30W
  • Switching Energy: 80µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 20.5nC
  • Td (on/off) @ 25°C: 30ns/55ns
  • Test Condition: 300V, 8A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 75ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FL
패키지: TO-220-3 Full Pack
재고4,480
600V
16A
-
2.4V @ 15V, 8A
30W
80µJ (on), 90µJ (off)
Standard
20.5nC
30ns/55ns
300V, 8A, 5 Ohm, 15V
75ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FL
STGB30NC60KT4
STMicroelectronics

IGBT 600V 60A 185W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 125A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 185W
  • Switching Energy: 350µJ (on), 435µJ (off)
  • Input Type: Standard
  • Gate Charge: 96nC
  • Td (on/off) @ 25°C: 29ns/120ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고14,358
600V
60A
125A
2.7V @ 15V, 20A
185W
350µJ (on), 435µJ (off)
Standard
96nC
29ns/120ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RGTH40TK65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 23A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 23 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 56 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40 nC
  • Td (on/off) @ 25°C: 22ns/73ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,320
650 V
23 A
80 A
2.1V @ 15V, 20A
56 W
-
Standard
40 nC
22ns/73ns
400V, 20A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
GT30J341-Q
Toshiba Semiconductor and Storage

IGBT 600V 59A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 59 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 230 W
  • Switching Energy: 800µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 80ns/280ns
  • Test Condition: 300V, 30A, 24Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고21
600 V
59 A
120 A
2V @ 15V, 30A
230 W
800µJ (on), 600µJ (off)
Standard
-
80ns/280ns
300V, 30A, 24Ohm, 15V
50 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
MMG05N60DT1
Motorola

IGBT, 0.5A, 600V, N-CHANNEL, TO-

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 500 mA
  • Current - Collector Pulsed (Icm): 2 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 300mA
  • Power - Max: 1 W
  • Switching Energy: 3.25mJ (off)
  • Input Type: Standard
  • Gate Charge: 6.4 nC
  • Td (on/off) @ 25°C: -/28ns
  • Test Condition: 300V, 400mA, 25Ohm, 15V
  • Reverse Recovery Time (trr): 150 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: TO-261A
패키지: -
Request a Quote
600 V
500 mA
2 A
2V @ 15V, 300mA
1 W
3.25mJ (off)
Standard
6.4 nC
-/28ns
300V, 400mA, 25Ohm, 15V
150 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
TO-261A
FGB3440G2-F085
onsemi

IGBT 400V 26.9A TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 26.9 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
  • Power - Max: 166 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24 nC
  • Td (on/off) @ 25°C: 1µs/5.3µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
Request a Quote
400 V
26.9 A
-
1.2V @ 4V, 6A
166 W
-
Logic
24 nC
1µs/5.3µs
-
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
MIW30N65FLA-BP
Micro Commercial Co

IGBT 650V 30A,TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 187 W
  • Switching Energy: 920µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 40ns/120ns
  • Test Condition: 300V, 30A, 33Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AB
패키지: -
재고5,400
650 V
60 A
120 A
2.1V @ 15V, 30A
187 W
920µJ (on), 450µJ (off)
Standard
150 nC
40ns/120ns
300V, 30A, 33Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AB
FGI3040G2-F085C
onsemi

ECOSPARK2 IGN-IGBT TO262

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 6.5A, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: I2PAK (TO-262)
패키지: -
재고3,000
400 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
-/4.8µs
300V, 6.5A, 1kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-262-3 Long Leads, I2PAK, TO-262AA
I2PAK (TO-262)
IHW30N65R6XKSA1
Infineon Technologies

IGBT 650V 65A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
  • Power - Max: 163 W
  • Switching Energy: 730µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 13ns/161ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 90 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
Request a Quote
650 V
65 A
90 A
1.6V @ 15V, 30A
163 W
730µJ (on), 260µJ (off)
Standard
120 nC
13ns/161ns
400V, 30A, 10Ohm, 15V
90 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
RGS00TS65DHRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 88A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 88 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 326 W
  • Switching Energy: 1.46mJ (on), 1.29mJ (off)
  • Input Type: Standard
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 36ns/115ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,350
650 V
88 A
150 A
2.1V @ 15V, 50A
326 W
1.46mJ (on), 1.29mJ (off)
Standard
58 nC
36ns/115ns
400V, 50A, 10Ohm, 15V
103 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IKW75N60TAFKSA1
Infineon Technologies

IGBT TRENCH/FS 600V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 428 W
  • Switching Energy: 4.5mJ
  • Input Type: Standard
  • Gate Charge: 470 nC
  • Td (on/off) @ 25°C: 33ns/330ns
  • Test Condition: 400V, 75A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 121 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
패키지: -
Request a Quote
600 V
80 A
225 A
2V @ 15V, 75A
428 W
4.5mJ
Standard
470 nC
33ns/330ns
400V, 75A, 5Ohm, 15V
121 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
MGP20N36CL
onsemi

IGBT T0220 360V CL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HGT4E30N60B3S
Harris Corporation

IGBT 60A, 600V, N CHANNEL, TO 26

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FGHL50T65LQDTL4
onsemi

IGBT TRENCH FS 650V 80A TO247-4L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A
  • Power - Max: 341 W
  • Switching Energy: 410µJ (on), 860µJ (off)
  • Input Type: Standard
  • Gate Charge: 509 nC
  • Td (on/off) @ 25°C: 28ns/424ns
  • Test Condition: 400V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 75 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
패키지: -
Request a Quote
650 V
80 A
200 A
1.35V @ 15V, 50A
341 W
410µJ (on), 860µJ (off)
Standard
509 nC
28ns/424ns
400V, 50A, 4.7Ohm, 15V
75 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
IGQ75N120S7XKSA1
Infineon Technologies

IGBT TRENCH 1200V 154A TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 154 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 630 W
  • Switching Energy: 5.13mJ (on), 3.48mJ (off)
  • Input Type: Standard
  • Gate Charge: 450 nC
  • Td (on/off) @ 25°C: 38ns/190ns
  • Test Condition: 600V, 75A, 2.1Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-55
패키지: -
재고606
1200 V
154 A
225 A
2V @ 15V, 75A
630 W
5.13mJ (on), 3.48mJ (off)
Standard
450 nC
38ns/190ns
600V, 75A, 2.1Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-55
FGH75T65SQD-F155
onsemi

IGBT TRENCH FS 650V 150A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: 375 W
  • Switching Energy: 760µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 128 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 43 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고444
650 V
150 A
300 A
-
375 W
760µJ (on), 180µJ (off)
Standard
128 nC
-
-
43 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3