페이지 147 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  147/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7CH73K10EF-R
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 420nC
  • Td (on/off) @ 25°C: 105ns/45ns
  • Test Condition: 600V, 75A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고5,008
1200V
-
-
1.6V @ 15V, 20A
-
-
Standard
420nC
105ns/45ns
600V, 75A, 5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGS4610DTRRPBF
Infineon Technologies

IGBT 600V 16A 77W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,288
600V
16A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
13nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGP4066-EPBF
Infineon Technologies

IGBT 600V 140A 454W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 454W
  • Switching Energy: 2.47mJ (on), 2.16mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고6,000
600V
140A
225A
2.1V @ 15V, 75A
454W
2.47mJ (on), 2.16mJ (off)
Standard
150nC
50ns/200ns
400V, 75A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
SGP15N60XKSA1
Infineon Technologies

IGBT 600V 31A 139W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고5,328
600V
31A
62A
2.4V @ 15V, 15A
139W
570µJ
Standard
76nC
32ns/234ns
400V, 15A, 21 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IRG4BC20FD-SPBF
Infineon Technologies

IGBT 600V 16A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 250µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,800
600V
16A
64A
2V @ 15V, 9A
60W
250µJ (on), 640µJ (off)
Standard
27nC
43ns/240ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRG4PC50K
Infineon Technologies

IGBT 600V 52A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 52A
  • Current - Collector Pulsed (Icm): 104A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 490µJ (on), 680µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 38ns/160ns
  • Test Condition: 480V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고36,000
600V
52A
104A
2.2V @ 15V, 30A
200W
490µJ (on), 680µJ (off)
Standard
200nC
38ns/160ns
480V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRGPH40F
Infineon Technologies

IGBT FAST 1200V 29A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 29A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 17A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고6,688
1200V
29A
-
3.3V @ 15V, 17A
160W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXGX40N60BD1
IXYS

IGBT 600V 75A 250W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250W
  • Switching Energy: 2.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 25ns/180ns
  • Test Condition: 480V, 40A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고3,488
600V
75A
150A
2.1V @ 15V, 40A
250W
2.7mJ (off)
Standard
116nC
25ns/180ns
480V, 40A, 4.7 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGR24N60C
IXYS

IGBT 600V 42A 80W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 80W
  • Switching Energy: 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 15ns/75ns
  • Test Condition: 480V, 24A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고7,776
600V
42A
80A
2.5V @ 15V, 24A
80W
240µJ (off)
Standard
55nC
15ns/75ns
480V, 24A, 18 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
hot SGR15N40LTF
Fairchild/ON Semiconductor

IGBT 400V 45W DPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 130A
  • Power - Max: 45W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고164,736
400V
-
130A
8V @ 4.5V, 130A
45W
-
Standard
-
-
-
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot SGR2N60UFDTF
Fairchild/ON Semiconductor

IGBT 600V 2.4A 25W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 2.4A
  • Current - Collector Pulsed (Icm): 10A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.2A
  • Power - Max: 25W
  • Switching Energy: 30µJ (on), 13µJ (off)
  • Input Type: Standard
  • Gate Charge: 9nC
  • Td (on/off) @ 25°C: 15ns/80ns
  • Test Condition: 300V, 1.2A, 200 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고17,772
600V
2.4A
10A
2.6V @ 15V, 1.2A
25W
30µJ (on), 13µJ (off)
Standard
9nC
15ns/80ns
300V, 1.2A, 200 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXYH12N250CV1HV
IXYS

IGBT 2500V 28A TO247HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
  • Power - Max: 310W
  • Switching Energy: 3.56mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 12ns/167ns
  • Test Condition: 1250V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 16ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: TO-247-3
재고7,632
2500V
28A
80A
4.5V @ 15V, 12A
310W
3.56mJ (on), 1.7mJ (off)
Standard
56nC
12ns/167ns
1250V, 12A, 10 Ohm, 15V
16ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IXYT80N90C3
IXYS

IGBT 900V 165A 830W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 165A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
  • Power - Max: 830W
  • Switching Energy: 4.3mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 34ns/90ns
  • Test Condition: 450V, 80A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고5,680
900V
165A
360A
2.7V @ 15V, 80A
830W
4.3mJ (on), 1.9mJ (off)
Standard
145nC
34ns/90ns
450V, 80A, 2 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
RJH60A83RDPE-00#J3
Renesas Electronics America

IGBT 600V 20A 52W LDPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
  • Power - Max: 52W
  • Switching Energy: 230µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.7nC
  • Td (on/off) @ 25°C: 31ns/54ns
  • Test Condition: 300V, 10A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-83
  • Supplier Device Package: 4-LDPAK
패키지: SC-83
재고5,488
600V
20A
-
2.6V @ 15V, 10A
52W
230µJ (on), 160µJ (off)
Standard
19.7nC
31ns/54ns
300V, 10A, 5 Ohm, 15V
130ns
150°C (TJ)
Surface Mount
SC-83
4-LDPAK
IRG4BC15UDPBF
Infineon Technologies

IGBT 600V 14A 49W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 42A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
  • Power - Max: 49W
  • Switching Energy: 240µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 17ns/160ns
  • Test Condition: 480V, 7.8A, 75 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고6,720
600V
14A
42A
2.4V @ 15V, 7.8A
49W
240µJ (on), 260µJ (off)
Standard
23nC
17ns/160ns
480V, 7.8A, 75 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
RGT80TS65DGC11
Rohm Semiconductor

IGBT 650V 70A 234W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 34ns/119ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: TO-247-3
재고7,272
650V
70A
120A
2.1V @ 15V, 40A
234W
-
Standard
79nC
34ns/119ns
400V, 40A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
APT35GN120BG
Microsemi Corporation

IGBT 1200V 94A 379W TO247

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 94A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
  • Power - Max: 379W
  • Switching Energy: 2.315mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 24ns/300ns
  • Test Condition: 800V, 35A, 2.2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고6,804
1200V
94A
105A
2.1V @ 15V, 35A
379W
2.315mJ (off)
Standard
220nC
24ns/300ns
800V, 35A, 2.2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXGH32N120A3
IXYS

IGBT 1200V 75A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 230A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
  • Power - Max: 300W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 89nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고3,824
1200V
75A
230A
2.35V @ 15V, 32A
300W
-
Standard
89nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
STGWT80H65FB
STMicroelectronics

IGBT 650V 120A 469W TO3P-3L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 469W
  • Switching Energy: 2.1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 414nC
  • Td (on/off) @ 25°C: 84ns/280ns
  • Test Condition: 400V, 80A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고8,004
650V
120A
240A
2V @ 15V, 80A
469W
2.1mJ (on), 1.5mJ (off)
Standard
414nC
84ns/280ns
400V, 80A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
STGW40H120DF2
STMicroelectronics

IGBT 1200V 40A HS TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
  • Power - Max: 468W
  • Switching Energy: 1mJ (on), 1.32mJ (off)
  • Input Type: Standard
  • Gate Charge: 187nC
  • Td (on/off) @ 25°C: 18ns/152ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 488ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,160
1200V
80A
160A
2.6V @ 15V, 40A
468W
1mJ (on), 1.32mJ (off)
Standard
187nC
18ns/152ns
600V, 40A, 10 Ohm, 15V
488ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
MIW40N65AT0Y-BP
Micro Commercial Co

IGBT TRENCH FS 650V 80A TO247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
  • Power - Max: 187 W
  • Switching Energy: 1.27mJ (on), 460µJ (off)
  • Input Type: -
  • Gate Charge: 200 nC
  • Td (on/off) @ 25°C: 19ns/129ns
  • Test Condition: 300V, 40A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 68 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AB
패키지: -
Request a Quote
650 V
80 A
160 A
1.95V @ 15V, 40A
187 W
1.27mJ (on), 460µJ (off)
-
200 nC
19ns/129ns
300V, 40A, 20Ohm, 15V
68 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AB
APT35GN120SG-TR
Microchip Technology

IGBT NPT FS 1200V 84A D3PAK

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 84 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
  • Power - Max: 379 W
  • Switching Energy: -, 2.315mJ (off)
  • Input Type: Standard
  • Gate Charge: 220 nC
  • Td (on/off) @ 25°C: 24ns/300ns
  • Test Condition: 800V, 35A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
패키지: -
Request a Quote
1200 V
84 A
105 A
2.1V @ 15V, 35A
379 W
-, 2.315mJ (off)
Standard
220 nC
24ns/300ns
800V, 35A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
HGTP7N60A4-F102
onsemi

IGBT 600V 34A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 34 A
  • Current - Collector Pulsed (Icm): 56 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125 W
  • Switching Energy: 55µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 60 nC
  • Td (on/off) @ 25°C: 11ns/100ns
  • Test Condition: 390V, 7A, 25Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: -
Request a Quote
600 V
34 A
56 A
2.7V @ 15V, 7A
125 W
55µJ (on), 150µJ (off)
Standard
60 nC
11ns/100ns
390V, 7A, 25Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FGH15T120SMD-F155
onsemi

IGBT TRENCH FS 1200V 30A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 333 W
  • Switching Energy: 1.15mJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 128 nC
  • Td (on/off) @ 25°C: 32ns/490ns
  • Test Condition: 600V, 15A, 34Ohm, 15V
  • Reverse Recovery Time (trr): 72 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
Request a Quote
1200 V
30 A
60 A
2.4V @ 15V, 15A
333 W
1.15mJ (on), 460µJ (off)
Standard
128 nC
32ns/490ns
600V, 15A, 34Ohm, 15V
72 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
PCFF30S65W
onsemi

IGBT FIELD STOP 650V 60A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HGT4E30N60C3S
Harris Corporation

IGBT 60A, 600V, N CHANNEL, TO 26

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXDA20N120AS-TUB
IXYS

IGBT

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): 35 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 200 W
  • Switching Energy: 3.1mJ (on), 2.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 100ns/500ns
  • Test Condition: 600V, 20A, 82Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
패키지: -
Request a Quote
1200 V
38 A
35 A
3V @ 15V, 20A
200 W
3.1mJ (on), 2.4mJ (off)
Standard
70 nC
100ns/500ns
600V, 20A, 82Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
RGS80TSX2GC11
Rohm Semiconductor

IGBT TRENCH FS 1200V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 555 W
  • Switching Energy: 3mJ (on), 3.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 49ns/199ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고753
1200 V
80 A
120 A
2.1V @ 15V, 40A
555 W
3mJ (on), 3.1mJ (off)
Standard
104 nC
49ns/199ns
600V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N