페이지 148 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  148/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGIB4620DPBF
Infineon Technologies

IGBT 600V 32A 140W TO220

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 36A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
  • Power - Max: 140W
  • Switching Energy: 185µJ (on), 355µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 31ns/83ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220 Full Pack
패키지: TO-220-3 Full Pack
재고5,344
600V
32A
36A
1.85V @ 15V, 12A
140W
185µJ (on), 355µJ (off)
Standard
25nC
31ns/83ns
400V, 12A, 22 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220 Full Pack
IRG7CH28UED
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,264
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG4BC30U-STRRP
Infineon Technologies

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 17ns/78ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,496
600V
23A
92A
2.1V @ 15V, 12A
100W
160µJ (on), 200µJ (off)
Standard
50nC
17ns/78ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4PH20K
Infineon Technologies

IGBT 1200V 11A 60W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 450µJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 23ns/93ns
  • Test Condition: 960V, 5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고3,344
1200V
11A
22A
4.3V @ 15V, 5A
60W
450µJ (on), 440µJ (off)
Standard
28nC
23ns/93ns
960V, 5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC20SD
Infineon Technologies

IGBT 600V 19A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 19A
  • Current - Collector Pulsed (Icm): 38A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
  • Power - Max: 60W
  • Switching Energy: 320µJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 62ns/690ns
  • Test Condition: 480V, 10A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,616
600V
19A
38A
1.6V @ 15V, 10A
60W
320µJ (on), 2.58mJ (off)
Standard
27nC
62ns/690ns
480V, 10A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGH24N60C4D1
IXYS

IGBT 600V 56A 190W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 21ns/143ns
  • Test Condition: 360V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고3,344
600V
56A
130A
2.7V @ 15V, 24A
190W
400µJ (on), 300µJ (off)
Standard
64nC
21ns/143ns
360V, 24A, 10 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGR40N60C
IXYS

IGBT 600V 75A 200W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 200W
  • Switching Energy: 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 25ns/100ns
  • Test Condition: 480V, 40A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고4,288
600V
75A
150A
2.7V @ 15V, 40A
200W
850µJ (off)
Standard
116nC
25ns/100ns
480V, 40A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
hot MGB15N40CLT4
ON Semiconductor

IGBT 440V 15A 150W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 25A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고150,516
440V
15A
50A
2.9V @ 4V, 25A
150W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot HGTG20N60C3D
Fairchild/ON Semiconductor

IGBT 600V 45A 164W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
  • Power - Max: 164W
  • Switching Energy: 500µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 91nC
  • Td (on/off) @ 25°C: 28ns/151ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고36,360
600V
45A
300A
1.8V @ 15V, 20A
164W
500µJ (on), 500µJ (off)
Standard
91nC
28ns/151ns
480V, 20A, 10 Ohm, 15V
55ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SGP15N60RUFTU
Fairchild/ON Semiconductor

IGBT 600V 24A 160W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 15A
  • Power - Max: 160W
  • Switching Energy: 320µJ (on), 356µJ (off)
  • Input Type: Standard
  • Gate Charge: 42nC
  • Td (on/off) @ 25°C: 17ns/44ns
  • Test Condition: 300V, 15A, 13 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고4,752
600V
24A
45A
2.8V @ 15V, 15A
160W
320µJ (on), 356µJ (off)
Standard
42nC
17ns/44ns
300V, 15A, 13 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FGB20N6S2D
Fairchild/ON Semiconductor

IGBT 600V 28A 125W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125W
  • Switching Energy: 25µJ (on), 58µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 7.7ns/87ns
  • Test Condition: 390V, 7A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,872
600V
28A
40A
2.7V @ 15V, 7A
125W
25µJ (on), 58µJ (off)
Standard
30nC
7.7ns/87ns
390V, 7A, 25 Ohm, 15V
31ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
AIKW50N65DH5XKSA1
Infineon Technologies

IC DISCRETE 650V TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AUIRG4BC30SSTRL
Infineon Technologies

IGBT 600V 34A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,440
600V
34A
68A
1.6V @ 15V, 18A
100W
260µJ (on), 3.45mJ (off)
Standard
50nC
22ns/540ns
480V, 18A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4BC10SD-SPBF
Infineon Technologies

IGBT 600V 14A 38W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 310µJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 76ns/815ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,216
600V
14A
18A
1.8V @ 15V, 8A
38W
310µJ (on), 3.28mJ (off)
Standard
15nC
76ns/815ns
480V, 8A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGH50N90B2
IXYS

IGBT 900V 75A 400W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 400W
  • Switching Energy: 4.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/350ns
  • Test Condition: 720V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고7,248
900V
75A
200A
2.7V @ 15V, 50A
400W
4.7mJ (off)
Standard
135nC
20ns/350ns
720V, 50A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
RJH1CV6DPK-00#T0
Renesas Electronics America

IGBT 1200V 60A 290W TO-3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
  • Power - Max: 290W
  • Switching Energy: 2.3mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 46ns/125ns
  • Test Condition: 600V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 180ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고6,384
1200V
60A
-
2.6V @ 15V, 30A
290W
2.3mJ (on), 1.7mJ (off)
Standard
105nC
46ns/125ns
600V, 30A, 5 Ohm, 15V
180ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
FGB5N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 10A 73.5W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A
  • Power - Max: 73.5W
  • Switching Energy: 80µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 12.1nC
  • Td (on/off) @ 25°C: 5.4ns/25.4ns
  • Test Condition: 400V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고18,828
600V
10A
15A
2.4V @ 15V, 5A
73.5W
80µJ (on), 70µJ (off)
Standard
12.1nC
5.4ns/25.4ns
400V, 5A, 10 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
STGW15H120DF2
STMicroelectronics

IGBT H-SERIES 1200V 15A TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
  • Power - Max: 259W
  • Switching Energy: 380µJ (on), 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 23ns/111ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 231ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,500
1200V
30A
60A
2.6V @ 15V, 15A
259W
380µJ (on), 370µJ (off)
Standard
67nC
23ns/111ns
600V, 15A, 10 Ohm, 15V
231ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGW28IH125DF
STMicroelectronics

IGBT 1250V 60A 375W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1250V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
  • Power - Max: 375W
  • Switching Energy: 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 114nC
  • Td (on/off) @ 25°C: -/128ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고14,436
1250V
60A
120A
2.5V @ 15V, 25A
375W
720µJ (off)
Standard
114nC
-/128ns
600V, 25A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IRG4PH20KDPBF
Infineon Technologies

IGBT 1200V 11A 60W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 620µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 50ns/100ns
  • Test Condition: 800V, 5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 51ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고12,960
1200V
11A
22A
4.3V @ 15V, 5A
60W
620µJ (on), 300µJ (off)
Standard
28nC
50ns/100ns
800V, 5A, 50 Ohm, 15V
51ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
GT30N135SRA-S1E
Toshiba Semiconductor and Storage

IGBT 1350V 60A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
  • Power - Max: 348 W
  • Switching Energy: -, 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 270 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 300V, 60A, 39Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고3
1350 V
60 A
120 A
2.6V @ 15V, 60A
348 W
-, 1.3mJ (off)
Standard
270 nC
-
300V, 60A, 39Ohm, 15V
-
175°C (TJ)
Through Hole
TO-247-3
TO-247
AIGB40N65F5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
Request a Quote
650 V
40 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
RGW40NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 48A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 144 W
  • Switching Energy: 110µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 59 nC
  • Td (on/off) @ 25°C: 33ns/129ns
  • Test Condition: 400V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고3,000
650 V
48 A
80 A
1.9V @ 15V, 20A
144 W
110µJ (on), 160µJ (off)
Standard
59 nC
33ns/129ns
400V, 10A, 10Ohm, 15V
60 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
APT20GN60BDQ2G
Microchip Technology

IGBT TRENCH FS 600V 40A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 136 W
  • Switching Energy: 230µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 9ns/140ns
  • Test Condition: 400V, 20A, 4.3Ohm, 15V
  • Reverse Recovery Time (trr): 30 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고33
600 V
40 A
60 A
1.9V @ 15V, 20A
136 W
230µJ (on), 580µJ (off)
Standard
120 nC
9ns/140ns
400V, 20A, 4.3Ohm, 15V
30 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IKQB200N75CP2AKSA1
Infineon Technologies

IGBT 750V 200A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 200A
  • Power - Max: 937 W
  • Switching Energy: 14.4mJ (on), 6.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 797 nC
  • Td (on/off) @ 25°C: 95ns/407ns
  • Test Condition: 450V, 200A, 4.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-51
패키지: -
재고558
750 V
200 A
600 A
1.65V @ 15V, 200A
937 W
14.4mJ (on), 6.9mJ (off)
Standard
797 nC
95ns/407ns
450V, 200A, 4.8Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-51
IRG4IBC30WPBF-INF
Infineon Technologies

COPACK IGBT W/ULTRAFAST SOFT REC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 17 A
  • Current - Collector Pulsed (Icm): 92 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 45 W
  • Switching Energy: 130µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 51 nC
  • Td (on/off) @ 25°C: 25ns/99ns
  • Test Condition: 480V, 12A, 23Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO220 Full Pack
패키지: -
Request a Quote
600 V
17 A
92 A
2.7V @ 15V, 12A
45 W
130µJ (on), 130µJ (off)
Standard
51 nC
25ns/99ns
480V, 12A, 23Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO220 Full Pack
FGH75T65UPD-F085
onsemi

IGBT 650V 150A 375W TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Power - Max: 375 W
  • Switching Energy: 2.85mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 578 nC
  • Td (on/off) @ 25°C: 32ns/166ns
  • Test Condition: 400V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 85 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고1,131
650 V
150 A
225 A
2.3V @ 15V, 75A
375 W
2.85mJ (on), 1.2mJ (off)
Standard
578 nC
32ns/166ns
400V, 75A, 3Ohm, 15V
85 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IKW50N65SS5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 274 W
  • Switching Energy: 320µJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 20ns/140ns
  • Test Condition: 400V, 50A, 9Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: -
재고363
650 V
80 A
200 A
1.7V @ 15V, 50A
274 W
320µJ (on), 550µJ (off)
Standard
110 nC
20ns/140ns
400V, 50A, 9Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3