페이지 15 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  15/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGS4615DTRRPBF
Infineon Technologies

IGBT 600V 23A 99W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
  • Power - Max: 99W
  • Switching Energy: 70µJ (on), 145µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 30ns/95ns
  • Test Condition: 400V, 8A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,000
600V
23A
24A
1.85V @ 15V, 8A
99W
70µJ (on), 145µJ (off)
Standard
19nC
30ns/95ns
400V, 8A, 47 Ohm, 15V
60ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
SKB15N60HSATMA1
Infineon Technologies

IGBT 600V 27A 138W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 27A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
  • Power - Max: 138W
  • Switching Energy: 530µJ
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 13ns/209ns
  • Test Condition: 400V, 15A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 111ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,192
600V
27A
60A
3.15V @ 15V, 15A
138W
530µJ
Standard
80nC
13ns/209ns
400V, 15A, 23 Ohm, 15V
111ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IRG4RC20FPBF
Infineon Technologies

IGBT 600V 22A 66W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 66W
  • Switching Energy: 190µJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 26ns/194ns
  • Test Condition: 480V, 12A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,608
600V
22A
44A
2.1V @ 15V, 12A
66W
190µJ (on), 920µJ (off)
Standard
27nC
26ns/194ns
480V, 12A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRG4IBC30UD
Infineon Technologies

IGBT 600V 17A 45W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 17A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 45W
  • Switching Energy: 380µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 40ns/91ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고5,088
600V
17A
92A
2.1V @ 15V, 12A
45W
380µJ (on), 160µJ (off)
Standard
50nC
40ns/91ns
480V, 12A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IRGPC40FD2
Infineon Technologies

IGBT W/DIODE 600V 49A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 49A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고3,744
600V
49A
-
2V @ 15V, 27A
160W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IXGH20N60BD1
IXYS

IGBT 600V 40A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 15ns/110ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고390,000
600V
40A
80A
2V @ 15V, 20A
150W
700µJ (off)
Standard
55nC
15ns/110ns
480V, 20A, 10 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGX60N60C2D1
IXYS

IGBT 600V 75A 480W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 480W
  • Switching Energy: 400µJ (on), 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 146nC
  • Td (on/off) @ 25°C: 18ns/95ns
  • Test Condition: 400V, 50A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고5,120
600V
75A
300A
2.5V @ 15V, 50A
480W
400µJ (on), 480µJ (off)
Standard
146nC
18ns/95ns
400V, 50A, 2 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
hot IXGX60N60B2D1
IXYS

IGBT 600V 75A 500W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 500W
  • Switching Energy: 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 28ns/160ns
  • Test Condition: 400V, 50A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고5,600
600V
75A
300A
1.8V @ 15V, 50A
500W
1mJ (off)
Standard
170nC
28ns/160ns
400V, 50A, 3.3 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXA45IF1200HB
IXYS

IGBT 1200V 78A 325W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
  • Power - Max: 325W
  • Switching Energy: 3.8mJ (on), 4.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 106nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 35A, 27 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (HB)
패키지: TO-247-3
재고2,224
1200V
78A
-
2.1V @ 15V, 35A
325W
3.8mJ (on), 4.1mJ (off)
Standard
106nC
-
600V, 35A, 27 Ohm, 15V
350ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (HB)
APT30GP60B2DLG
Microsemi Corporation

IGBT 600V 100A 463W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX?
패키지: TO-247-3
재고2,832
600V
100A
120A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX?
IXXH50N60B3D1
IXYS

IGBT 600V 120A 600W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
  • Power - Max: 600W
  • Switching Energy: 670µJ (on), 740µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 27ns/100ns
  • Test Condition: 360V, 36A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
패키지: TO-247-3
재고6,528
600V
120A
200A
1.8V @ 15V, 36A
600W
670µJ (on), 740µJ (off)
Standard
70nC
27ns/100ns
360V, 36A, 5 Ohm, 15V
25ns
-
Through Hole
TO-247-3
TO-247 (IXXH)
IXGR48N60B3D1
IXYS

IGBT 600V 60A 150W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 150W
  • Switching Energy: 840µJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 22ns/130ns
  • Test Condition: 480V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고7,904
600V
60A
280A
2.1V @ 15V, 40A
150W
840µJ (on), 660µJ (off)
Standard
115nC
22ns/130ns
480V, 30A, 5 Ohm, 15V
100ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXXH30N60C3D1
IXYS

IGBT 600V 60A 270W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
  • Power - Max: 270W
  • Switching Energy: 500µJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 23ns/77ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
패키지: TO-247-3
재고4,016
600V
60A
110A
2.3V @ 15V, 24A
270W
500µJ (on), 270µJ (off)
Standard
37nC
23ns/77ns
400V, 24A, 10 Ohm, 15V
25ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXXH)
GPA040A120L-ND
Global Power Technologies Group

IGBT 1200V 80A 455W TO264

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
  • Power - Max: 455W
  • Switching Energy: 5.8mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 510nC
  • Td (on/off) @ 25°C: 41ns/200ns
  • Test Condition: 600V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 220ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: TO-264-3, TO-264AA
재고5,536
1200V
80A
120A
2.8V @ 15V, 40A
455W
5.8mJ (on), 1.5mJ (off)
Standard
510nC
41ns/200ns
600V, 40A, 5 Ohm, 15V
220ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
IXGP48N60C3
IXYS

IGBT 600V 75A 300W TO220AB

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 410µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/60ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,648
600V
75A
250A
2.5V @ 15V, 30A
300W
410µJ (on), 230µJ (off)
Standard
77nC
19ns/60ns
400V, 30A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot FGH60N60SFDTU
Fairchild/ON Semiconductor

IGBT 600V 120A 378W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 378W
  • Switching Energy: 1.79mJ (on), 670µJ (off)
  • Input Type: Standard
  • Gate Charge: 198nC
  • Td (on/off) @ 25°C: 22ns/134ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 47ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고216,000
600V
120A
180A
2.9V @ 15V, 60A
378W
1.79mJ (on), 670µJ (off)
Standard
198nC
22ns/134ns
400V, 60A, 5 Ohm, 15V
47ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
GPA025A120MN-ND
Global Power Technologies Group

IGBT 1200V 50A 312W TO3PN

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
  • Power - Max: 312W
  • Switching Energy: 4.15mJ (on), 870µJ (off)
  • Input Type: Standard
  • Gate Charge: 350nC
  • Td (on/off) @ 25°C: 57ns/240ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 480ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3PN
패키지: TO-3
재고2,048
1200V
50A
75A
2.5V @ 15V, 25A
312W
4.15mJ (on), 870µJ (off)
Standard
350nC
57ns/240ns
600V, 25A, 10 Ohm, 15V
480ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-3PN
HGT1S12N60C3D
Harris Corporation

24A, 600V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 24 A
  • Current - Collector Pulsed (Icm): 96 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 104 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 62 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262 (I2PAK)
패키지: -
Request a Quote
600 V
24 A
96 A
2.2V @ 15V, 15A
104 W
-
Standard
62 nC
-
-
40 ns
-40°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262 (I2PAK)
IXYA8N250CHV
IXYS

IGBT 2500V 29A TO263HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 29 A
  • Current - Collector Pulsed (Icm): 70 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
  • Power - Max: 280 W
  • Switching Energy: 2.6mJ (on), 1.07mJ (off)
  • Input Type: Standard
  • Gate Charge: 45 nC
  • Td (on/off) @ 25°C: 11ns/180ns
  • Test Condition: 1250V, 8A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 5 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
패키지: -
재고108
2500 V
29 A
70 A
4V @ 15V, 8A
280 W
2.6mJ (on), 1.07mJ (off)
Standard
45 nC
11ns/180ns
1250V, 8A, 15Ohm, 15V
5 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
FD1200R12IE4B1S1BDMA1
Infineon Technologies

FD1200R12IE4B1S1BD - IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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HGTP20N60C3R
Harris Corporation

40A, 600V, RUGGED N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 45 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
  • Power - Max: 164 W
  • Switching Energy: 500µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 122 nC
  • Td (on/off) @ 25°C: 28ns/151ns
  • Test Condition: 480V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 24 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
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600 V
45 A
300 A
1.8V @ 15V, 20A
164 W
500µJ (on), 500µJ (off)
Standard
122 nC
28ns/151ns
480V, 20A, 10Ohm, 15V
24 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
IKA08N65ET6XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 11A TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 11 A
  • Current - Collector Pulsed (Icm): 25 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
  • Power - Max: 33 W
  • Switching Energy: 110µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 17 nC
  • Td (on/off) @ 25°C: 20ns/59ns
  • Test Condition: 400V, 5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 43 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3-FP
패키지: -
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650 V
11 A
25 A
1.9V @ 15V, 5A
33 W
110µJ (on), 40µJ (off)
Standard
17 nC
20ns/59ns
400V, 5A, 47Ohm, 15V
43 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3-FP
HGTP10N40F1D
Harris Corporation

12A, 400V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 12 A
  • Current - Collector Pulsed (Icm): 12 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 5A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 13.4 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
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400 V
12 A
12 A
2.5V @ 10V, 5A
75 W
-
Standard
13.4 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
FGH60N60SMD-F085
onsemi

IGBT 600V 120A 600W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 600 W
  • Switching Energy: 1.59mJ (on), 390µJ (off)
  • Input Type: Standard
  • Gate Charge: 280 nC
  • Td (on/off) @ 25°C: 22ns/116ns
  • Test Condition: 400V, 60A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
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600 V
120 A
180 A
2.5V @ 15V, 60A
600 W
1.59mJ (on), 390µJ (off)
Standard
280 nC
22ns/116ns
400V, 60A, 3Ohm, 15V
42 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IKZA50N65SS5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 274 W
  • Switching Energy: 230µJ (on), 520µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 19ns/140ns
  • Test Condition: 400V, 50A, 9Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
패키지: -
재고618
650 V
80 A
200 A
1.7V @ 15V, 50A
274 W
230µJ (on), 520µJ (off)
Standard
110 nC
19ns/140ns
400V, 50A, 9Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
FGHL50T65LQDT
onsemi

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A
  • Power - Max: 341 W
  • Switching Energy: 510µJ (on), 880µJ (off)
  • Input Type: Standard
  • Gate Charge: 509 nC
  • Td (on/off) @ 25°C: 31ns/408ns
  • Test Condition: 400V, 25A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 75 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
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650 V
80 A
200 A
1.35V @ 15V, 50A
341 W
510µJ (on), 880µJ (off)
Standard
509 nC
31ns/408ns
400V, 25A, 4.7Ohm, 15V
75 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
HGTD3N60A4S
Fairchild Semiconductor

IGBT, 17A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 17 A
  • Current - Collector Pulsed (Icm): 40 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
  • Power - Max: 70 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: 6ns/73ns
  • Test Condition: 390V, 3A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
패키지: -
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600 V
17 A
40 A
2.7V @ 15V, 3A
70 W
-
Standard
32 nC
6ns/73ns
390V, 3A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
RGCL80TS60GC11
Rohm Semiconductor

IGBT TRNCH FIELD 600V 65A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 148 W
  • Switching Energy: 1.11mJ (on), 1.68mJ (off)
  • Input Type: Standard
  • Gate Charge: 98 nC
  • Td (on/off) @ 25°C: 53ns/227ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,260
600 V
65 A
160 A
1.8V @ 15V, 40A
148 W
1.11mJ (on), 1.68mJ (off)
Standard
98 nC
53ns/227ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N